Personal information

Other IDs

Scopus Author ID: 58002318600
ResearcherID: JGL-7999-2023

Keywords

SiC Power MOSFET, SiC MOSFET Design and Reliability, Interface State Density, SiC Gate Oxide

Countries

United States

Activities

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Employment (4)

Global Foundries: Burlington, Vermont, US

2022-10-10 to present | Principal Engineer (Technology and Devlopment)
Employment
Source: Self-asserted source
Hema Lata Rao Maddi

The Ohio State University: Columbus, Ohio, US

2021-03-01 to 2022-10-07 | Postdoctoral Scholar (Electrical and Computer Engineering)
Employment
Source: Self-asserted source
Hema Lata Rao Maddi

Centurion University of Technology and Management: Parlakhemundi, Orissa, IN

2009-06-05 to 2012-01-03 | Asst. Professor (Electronics and Instrumentation)
Employment
Source: Self-asserted source
Hema Lata Rao Maddi

Centurion University of Technology and Management: Parlakhemundi, Orissa, IN

2004-08-12 to 2007-07-17 | Lecturer (Electronics and Instrumentation)
Employment
Source: Self-asserted source
Hema Lata Rao Maddi

Education and qualifications (1)

Indian Institute of Technology Bhubaneswar - Toshali Campus: Bhubaneswar, Orissa, IN

2012-04-01 to 2018-03-18 | PhD (Electrical Sciences)
Education
Source: Self-asserted source
Hema Lata Rao Maddi

Professional activities (2)

Society of Women Engineers: Chicago, US

2023-02-08 to present | Professional
Membership
Source: Self-asserted source
Hema Lata Rao Maddi

Power America: Raleigh, NC, US

2022-10 to present | Professional Member
Membership
Source: Self-asserted source
Hema Lata Rao Maddi

Works (16)

Silicon Carbide Dmosfet Design Adaptation for LOW Interface Trap Density

2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
2024-03-03 | Conference paper
DOI: 10.1109/edtm58488.2024.10511986
Contributors: Akul Kumar Singh; Suvendu Nayak; Hema Lata Rao Maddi; Susanna Yu; Swaroop Ganguly; Anant K. Agarwal
Source: Self-asserted source
Hema Lata Rao Maddi

Reliability Comparison of Commercial Planar and Trench 4H-SiC Power MOSFETs

IEEE International Reliability Physics Symposium Proceedings
2023 | Conference paper
DOI: 10.1109/IRPS48203.2023.10117998
EID:

2-s2.0-85160402352

Part of ISSN: 15417026
Contributors: Zhu, S.; Shi, L.; Jin, M.; Qian, J.; Bhattacharya, M.; Rao Maddi, H.L.; White, M.H.; Agarwal, A.K.; Liu, T.; Shimbori, A. et al.
Source: Self-asserted source
Hema Lata Rao Maddi via Scopus - Elsevier

Design of the Drift Layer of 0.6 – 1.7 kV Power Silicon Carbide MOSFETs for Enhanced Short Circuit Withstand Time

2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
2023-03-07 | Conference paper
DOI: 10.1109/edtm55494.2023.10103006
Contributors: Prashant Singh; Akshay K; Hema Lata Rao Maddi; Anant Agarwal; Shreepad Karmalkar
Source: Self-asserted source
Hema Lata Rao Maddi

Characterization of Near Conduction Band SiC/SiO<sub>2</sub>Interface Traps in Commercial 4H-SiC Power MOSFETs

2022 IEEE 9th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2022
2022 | Conference paper
DOI: 10.1109/WiPDA56483.2022.9955292
EID:

2-s2.0-85143790051
Contributors: Rao Maddi, H.L.; Nayak, S.; Talesara, V.; Xu, Y.; Lu, W.; Agarwal, A.K.
Source: Self-asserted source
Hema Lata Rao Maddi via Scopus - Elsevier

Effects of Oxide Electric Field Stress on the Gate Oxide Reliability of Commercial SiC Power MOSFETs

2022 IEEE 9th Workshop on Wide Bandgap Power Devices &amp; Applications (WiPDA)
2022-11-07 | Conference paper
DOI: 10.1109/wipda56483.2022.9955295
Contributors: Limeng Shi; Tianshi Liu; Shengnan Zhu; Jiashu Qian; Michael Jin; Hema Lata Rao Maddi; Marvin H. White; Anant K. Agarwal
Source: Self-asserted source
Hema Lata Rao Maddi

Effects of JFET Region Design and Gate Oxide Thickness on the Static and Dynamic Performance of 650 V SiC Planar Power MOSFETs

Materials
2022-08-30 | Journal article
DOI: 10.3390/ma15175995
Part of ISSN: 1996-1944
Contributors: Shengnan Zhu; Tianshi Liu; Junchong Fan; Hema Lata Rao Maddi; Marvin H. White; Anant K. Agarwal
Source: Self-asserted source
Hema Lata Rao Maddi

Non-isothermal simulation of SiC DMOSFET short circuit capability

Japanese Journal of Applied Physics
2022-06-01 | Journal article
DOI: 10.35848/1347-4065/ac6409
Part of ISSN: 0021-4922
Part of ISSN: 1347-4065
Contributors: suvendu nayak; Susanna Yu; Hema Lata Rao Maddi; Michael Jin; Limeng Shi; Swaroop Ganguly; Anant K. Agarwal
Source: Self-asserted source
Hema Lata Rao Maddi

The Road to a Robust and Affordable SiC Power MOSFET Technology

Energies
2021-12-09 | Journal article
DOI: 10.3390/en14248283
Part of ISSN: 1996-1073
Contributors: Hema Lata Rao Maddi; Susanna Yu; Shengnan Zhu; Tianshi Liu; Limeng Shi; Minseok Kang; Diang Xing; Suvendu Nayak; Marvin H. White; Anant Agarwal
Source: Self-asserted source
Hema Lata Rao Maddi

Comparison of Gate Oxide Lifetime Predictions with Charge-to-Breakdown Approach and Constant-Voltage TDDB on SiC Power MOSFET

2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)
2021-11-07 | Conference paper
DOI: 10.1109/wipda49284.2021.9645100
Contributors: Shengnan Zhu; Tianshi Liu; Limeng Shi; Michael Jin; Hema Lata Rao Maddi; Marvin H. White; Anant K. Agarwal
Source: Self-asserted source
Hema Lata Rao Maddi

An improved analytical model of 4H-SiC MESFET incorporating bulk and interface trapping effects

Journal of Semiconductors
2015-01 | Journal article
DOI: 10.1088/1674-4926/36/1/014004
Part of ISSN: 1674-4926
Contributors: M. Hema Lata Rao; N. V. L. Narasimha Murty
Source: Self-asserted source
Hema Lata Rao Maddi

The Role of Substrate Compensation on DC Characteristics of 4H-SiC MESFET with Buffer Layer: A Combined Two-Dimensional Simulations and Analytical Study

Materials Science Forum
2014-02 | Journal article
DOI: 10.4028/www.scientific.net/msf.778-780.887
Part of ISSN: 1662-9752
Contributors: M. Hema Lata Rao; Neti.V.L. Narasimha Murty
Source: Self-asserted source
Hema Lata Rao Maddi

Analytical study of substrate parasitic effects in common-base and common-emitter SiGe BHT amplifiers

Journal of Microwaves, Optoelectronics and Electromagnetic Applications
2013-06 | Journal article
DOI: 10.1590/s2179-10742013000100017
Part of ISSN: 2179-1074
Contributors: Neti V L Narasimha Murty; M. Hemalata Rao
Source: Self-asserted source
Hema Lata Rao Maddi

SVM-DTC Permanent magnet synchronous motor driven electric vehicle with bidirectional converter

2013 International Mutli-Conference on Automation, Computing, Communication, Control and Compressed Sensing (iMac4s)
2013-03 | Conference paper
DOI: 10.1109/imac4s.2013.6526505
Contributors: Siva Ganesh Malla; M. H. L. Rao; J. M. R. Malla; R. R. Sabat; J. Dadi; M. M. Das
Source: Self-asserted source
Hema Lata Rao Maddi

An improved I-V model of 4H-SiC MESFETs incorporating substrate trapping, surface trapping and thermal effects

2013 Spanish Conference on Electron Devices
2013-02 | Conference paper
DOI: 10.1109/cde.2013.6481346
Contributors: M. Hema Lata Rao; Neti V. L. Narasimha Murty
Source: Self-asserted source
Hema Lata Rao Maddi

FPGA Implementation of Reconfigurable Switch Architecture for Next Generation Communication Networks

International Journal of Engineering and Technology
2012 | Journal article
DOI: 10.7763/ijet.2012.v4.481
Part of ISSN: 1793-8236
Contributors: M. Hema Lata Rao
Source: Self-asserted source
Hema Lata Rao Maddi

Design of a reconfigurable switch architecture for next generation communication networks

TENCON 2009 - 2009 IEEE Region 10 Conference
2009-11 | Conference poster
DOI: 10.1109/tencon.2009.5396119
Contributors: M. Hema lata Rao; Rajeev Tripathi
Source: Self-asserted source
Hema Lata Rao Maddi

Peer review (16 reviews for 5 publications/grants)

Review activity for Applied physics letters. (1)
Review activity for IEEE electron device letters : (1)
Review activity for IEEE transactions on electron devices. (4)
Review activity for Journal of applied physics. (2)
Review activity for Materials science in semiconductor processing. (8)
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