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Employment (1)

Slovak University of Technology in Bratislava: Bratislava, SK

2006-06-01 to present (Institute of electronics and photonics)
Employment
Source: Self-asserted source
Juraj Marek

Education and qualifications (1)

Slovak University of Technology in Bratislava: Bratislava, SK

PhD.
Education
Source: Self-asserted source
Juraj Marek

Works (50 of 52)

Items per page:
Page 1 of 2

Charge Trap States of SiC Power TrenchMOS Transistor under Repetitive Unclamped Inductive Switching Stress

Materials
2022-11 | Journal article | Author
Contributors: Juraj Marek; Jozef Kozarik; Michal Minarik; Aleš Chvála; Matej Matus; Martin Donoval; Lubica Stuchlikova; Martin Weis
Source: check_circle
Multidisciplinary Digital Publishing Institute

Evaluation of Effective Mass in InGaAsN/GaAs Quantum Wells Using Transient Spectroscopy

Materials
2022-10 | Journal article | Author
Contributors: Lubica Stuchlikova; Beata Sciana; Arpad Kosa; Matej Matus; Peter Benko; Juraj Marek; Martin Donoval; Wojciech Dawidowski; Damian Radziewicz; Martin Weis
Source: check_circle
Multidisciplinary Digital Publishing Institute

Semi-insulating GaN for vertical structures: role of substrate selection and growth pressure

Materials Science in Semiconductor Processing
2020 | Journal article
EID:

2-s2.0-85086373675

Part of ISBN:

13698001

Contributors: Šichman, P.; Hasenöhrl, S.; Stoklas, R.; Priesol, J.; Dobročka, E.; Haščík, Š.; Gucmann, F.; Vincze, A.; Chvála, A.; Marek, J. et al.
Source: Self-asserted source
Juraj Marek via Scopus - Elsevier

Advanced characterization techniques and analysis of thermal properties of AlGaN/GaN Multifinger Power HEMTs on SiC substrate supported by three-dimensional simulation

Journal of Electronic Packaging, Transactions of the ASME
2019 | Journal article
EID:

2-s2.0-85065873712

Part of ISBN:

15289044 10437398

Contributors: Chvála, A.; Szobolovszký, R.; Kovác, J.; Florovic, M.; Marek, J.; Cernaj, L.; Donoval, D.; Dua, C.; Delage, S.L.; Jacquet, J.-C.
Source: Self-asserted source
Juraj Marek via Scopus - Elsevier

Device and Circuit Models of Monolithic InAlN/GaN NAND and NOR Logic Cells Comprising D- and E-Mode HEMTs

Journal of Circuits, Systems and Computers
2019 | Journal article
EID:

2-s2.0-85066080697

Part of ISBN:

02181266

Contributors: Chvála, A.; Nagy, L.; Marek, J.; Priesol, J.; Donoval, D.; Šatka, A.; Blaho, M.; Gregušová, D.; Kuzmík, J.
Source: Self-asserted source
Juraj Marek via Scopus - Elsevier

Neural network for circuit models of monolithic InAlN/GaN NAND and NOR logic gates

Proceedings - 2019 14th IEEE International Conference on Design and Technology of Integrated Systems In Nanoscale Era, DTIS 2019
2019 | Conference paper
EID:

2-s2.0-85068437357

Contributors: Chvala, A.; Nagy, L.; Marek, J.; Priesol, J.; Donoval, D.; Satka, A.
Source: Self-asserted source
Juraj Marek via Scopus - Elsevier

Performance analysis of ESD structures in 130 nm CMOS technology for low-power applications

2019 29th International Conference Radioelektronika, RADIOELEKTRONIKA 2019 - Microwave and Radio Electronics Week, MAREW 2019
2019 | Conference paper
EID:

2-s2.0-85066944536

Contributors: Nagy, L.; Chvala, A.; Marek, J.; Potocny, M.; Stopjakova, V.
Source: Self-asserted source
Juraj Marek via Scopus - Elsevier

Advanced TCAD simulation of silver sintering for power modules integration

ASDAM 2018 - Proceedings: 12th International Conference on Advanced Semiconductor Devices and Microsystems
2018 | Conference paper
EID:

2-s2.0-85059985056

Contributors: Pribitny, P.; Chvala, A.; Marek, J.; Donoval, D.
Source: Self-asserted source
Juraj Marek via Scopus - Elsevier

Analysis of thermal properties of power multifinger HEMT devices

ASME 2018 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems, InterPACK 2018
2018 | Conference paper
EID:

2-s2.0-85057258221

Contributors: Chvála, A.; Szobolovszký, R.; Kováč, J.; Florovič, M.; Marek, J.; Černaj, L.; Príbytný, P.; Donoval, D.; Kováč, J.; Laurent Delage, S. et al.
Source: Self-asserted source
Juraj Marek via Scopus - Elsevier

Characterization of Monolithic InAlN/GaN NAND Logic Cell Supported by Circuit and Device Simulations

IEEE Transactions on Electron Devices
2018 | Journal article
EID:

2-s2.0-85046366322

Part of ISBN:

00189383

Contributors: Chvala, A.; Nagy, L.; Marek, J.; Priesol, J.; Donoval, D.; Blaho, M.; Gregusova, D.; Kuzmik, J.; Satka, A.
Source: Self-asserted source
Juraj Marek via Scopus - Elsevier

Degradation of power P-GaN HEMT under high voltage switching

ASDAM 2018 - Proceedings: 12th International Conference on Advanced Semiconductor Devices and Microsystems
2018 | Conference paper
EID:

2-s2.0-85059987215

Contributors: Marek, J.; Kozarik, J.; Jagelka, M.; Drobny, J.; Chvala, A.; Donoval, D.; Stuchlikova, L.
Source: Self-asserted source
Juraj Marek via Scopus - Elsevier

Device and circuit models of InAlN/GaN D-and dual-gate E-mode HEMTs for design and characterisation of monolithic NAND logic cell

Proceedings - 2018 13th IEEE International Conference on Design and Technology of Integrated Systems In Nanoscale Era, DTIS 2018
2018 | Conference paper
EID:

2-s2.0-85048888356

Contributors: Chvala, A.; Nagy, L.; Marek, J.; Priesol, J.; Donoval, D.; Satka, A.; Blaho, M.; Gregusova, D.; Kuzmik, J.
Source: Self-asserted source
Juraj Marek via Scopus - Elsevier

Direct SPICE-like 3-d electrothermal simulation of power HEMTs

ASDAM 2018 - Proceedings: 12th International Conference on Advanced Semiconductor Devices and Microsystems
2018 | Conference paper
EID:

2-s2.0-85059987151

Contributors: Cernaj, L.; Chvala, A.; Marek, J.; Donova, D.; Zavodnik, T.; Kozarik, J.; Jagelka, M.; Donoval, M.
Source: Self-asserted source
Juraj Marek via Scopus - Elsevier

Methodology and more accurate electrothermal model for fast simulation of power hemts

PCIM Europe Conference Proceedings
2018 | Conference paper
EID:

2-s2.0-85066987339

Part of ISBN:

21913358

Contributors: Chvála, A.; Marek, J.; Černaj, L.; Príbytný, P.; Šatka, A.; Stoffels, S.; Posthuma, N.; Decoutere, S.; Donoval, D.
Source: Self-asserted source
Juraj Marek via Scopus - Elsevier

Power P-GaN HEMT under single and multi-pulse UIS conditions

ASDAM 2018 - Proceedings: 12th International Conference on Advanced Semiconductor Devices and Microsystems
2018 | Conference paper
EID:

2-s2.0-85059974126

Contributors: Kozarik, J.; Marek, J.; Jagelka, M.; Cernaj, L.; Chvala, A.; Donoval, D.
Source: Self-asserted source
Juraj Marek via Scopus - Elsevier

Power p-GaN HEMT under unclamped inductive switching conditions

PCIM Europe Conference Proceedings
2018 | Conference paper
EID:

2-s2.0-85067031420

Part of ISBN:

21913358

Contributors: Marek, J.; Šatka, A.; Jagelka, M.; Chvála, A.; Príbytný, P.; Donoval, M.; Donoval, D.
Source: Self-asserted source
Juraj Marek via Scopus - Elsevier

Simulation analysis of InAlN/GaN monolithic NAND logic cell

ASDAM 2018 - Proceedings: 12th International Conference on Advanced Semiconductor Devices and Microsystems
2018 | Conference paper
EID:

2-s2.0-85059983979

Contributors: Chvala, A.; Nagy, L.; Marek, J.; Priesol, J.; Donoval, D.; Vilhan, M.; Blah, M.; Gregusova, D.; Kuzmik, J.; Satka, A.
Source: Self-asserted source
Juraj Marek via Scopus - Elsevier

Technology and performance of E/D-mode InAlN/GaN HEMTs for mixed-signal electronics

MIKON 2018 - 22nd International Microwave and Radar Conference
2018 | Conference paper
EID:

2-s2.0-85050764015

Contributors: Blaho, M.; Gregusova, D.; Hasscik, S.; Kuzmik, J.; Chvala, A.; Marek, J.; Satka, A.
Source: Self-asserted source
Juraj Marek via Scopus - Elsevier

3-D device and circuit electrothermal simulations of power integrated circuit including package

ASDAM 2016 - Conference Proceedings, 11th International Conference on Advanced Semiconductor Devices and Microsystems
2017 | Conference paper
EID:

2-s2.0-85011016543

Contributors: Chvála, A.; Benko, P.; Príbytný, P.; Marek, J.; Donoval, D.
Source: Self-asserted source
Juraj Marek via Scopus - Elsevier

Analysis of multifinger power HEMTs supported by effective 3-D device electrothermal simulation

Microelectronics Reliability
2017 | Journal article
EID:

2-s2.0-85032210678

Part of ISBN:

00262714

Contributors: Chvála, A.; Marek, J.; Príbytný, P.; Šatka, A.; Stoffels, S.; Posthuma, N.; Decoutere, S.; Donoval, D.
Source: Self-asserted source
Juraj Marek via Scopus - Elsevier

Effective 3-D Device Electrothermal Simulation Analysis of Influence of Metallization Geometry on Multifinger Power HEMTs Properties

IEEE Transactions on Electron Devices
2017 | Journal article
EID:

2-s2.0-85000916429

Part of ISBN:

00189383

Contributors: Chvala, A.; Marek, J.; Pribytny, P.; Satka, A.; Donoval, M.; Donoval, D.
Source: Self-asserted source
Juraj Marek via Scopus - Elsevier

Electro-physical 2-D/3-D TCAD analysis of reduce the temperature-related negative effects on silicon heterojunction solar cell for concentrated photovoltaic

ASDAM 2016 - Conference Proceedings, 11th International Conference on Advanced Semiconductor Devices and Microsystems
2017 | Conference paper
EID:

2-s2.0-85011026038

Contributors: Príbitný, P.; Mikolášek, M.; Marek, J.; Chvála, A.; Donoval, D.
Source: Self-asserted source
Juraj Marek via Scopus - Elsevier

Electrothermal analysis of power multifinger HEMTs supported by advanced 3-D device simulation

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
2017 | Conference paper
EID:

2-s2.0-85039054444

Contributors: Chvala, A.; Marek, J.; Pribytny, P.; Satka, A.; Donoval, D.; Stoffels, S.; Posthuma, N.; Decoutere, S.
Source: Self-asserted source
Juraj Marek via Scopus - Elsevier

Impact of repetitive UIS on modern GaN power devices

ASDAM 2016 - Conference Proceedings, 11th International Conference on Advanced Semiconductor Devices and Microsystems
2017 | Conference paper
EID:

2-s2.0-85011015586

Contributors: Marek, J.; Stuchlíková, L.; Jagelka, M.; Chvála, A.; Príbytný, P.; Donoval, M.; Donoval, D.
Source: Self-asserted source
Juraj Marek via Scopus - Elsevier

Post-deposition annealing and thermal stability of integrated self-aligned E/D-mode n<sup>++</sup>GaN/InAlN/AlN/GaN MOS HEMTs

ASDAM 2016 - Conference Proceedings, 11th International Conference on Advanced Semiconductor Devices and Microsystems
2017 | Conference paper
EID:

2-s2.0-85011031908

Contributors: Blaho, M.; Gregušová, D.; Haščik, Š.; Seifertová, A.; Ťapajna, M.; Šoltýs, J.; Šatka, A.; Nagy, L.; Chvála, A.; Marek, J. et al.
Source: Self-asserted source
Juraj Marek via Scopus - Elsevier

Study of repetitive avalanche stress invoked degradation of electrical properties of DMOS and TrenchMOS transistors

ASDAM 2016 - Conference Proceedings, 11th International Conference on Advanced Semiconductor Devices and Microsystems
2017 | Conference paper
EID:

2-s2.0-85011094677

Contributors: Marek, J.; Stuchlíková, L.; Jagelka, M.; Chvála, A.; Príbytný, P.; Donoval, M.; Donoval, D.
Source: Self-asserted source
Juraj Marek via Scopus - Elsevier

TCAD simulation methodology for full 3-D electro-physical and advanced thermal analysis of power modules

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
2017 | Conference paper
EID:

2-s2.0-85039034958

Contributors: Pribytny, P.; Chvala, A.; Marek, J.; Donoval, D.
Source: Self-asserted source
Juraj Marek via Scopus - Elsevier

2/3-D device simulations as an effective tool in microelectronics education

2016 11th European Workshop on Microelectronics Education, EWME 2016
2016 | Conference paper
EID:

2-s2.0-84981294991

Contributors: Chvála, A.; Marek, J.; Kósa, A.; Príbytný, P.; Stuchlíková, L.; Donoval, D.
Source: Self-asserted source
Juraj Marek via Scopus - Elsevier

Advanced 3-D device and circuit electrothermal simulations of power integrated circuit

European Solid-State Device Research Conference
2016 | Conference paper
EID:

2-s2.0-84994408863

Part of ISBN:

19308876

Contributors: Chvala, A.; Marek, J.; Pribytny, P.; Donoval, D.
Source: Self-asserted source
Juraj Marek via Scopus - Elsevier

Discrete power devices and power modules

Smart Systems Integration and Simulation
2016 | Book chapter
EID:

2-s2.0-85017608116

Contributors: Chvála, A.; Cristaldi, D.; Donoval, D.; Greco, G.; Marek, J.; Molnár, M.; Príbytný, P.; Raciti, A.; Vinci, G.
Source: Self-asserted source
Juraj Marek via Scopus - Elsevier

How to prepare university graduates as highly skilled key enabling technologies professionals?

2016 11th European Workshop on Microelectronics Education, EWME 2016
2016 | Conference paper
EID:

2-s2.0-84981303168

Contributors: Stuchliková, L.; Kósa, A.; Benko, P.; Marek, J.; Chvála, A.; Donoval, D.
Source: Self-asserted source
Juraj Marek via Scopus - Elsevier

Technology of integrated self-aligned E/D-mode n<sup>++</sup>GaN/InAlN/AlN/GaN MOS HEMTs for mixed-signal electronics

Semiconductor Science and Technology
2016 | Journal article
EID:

2-s2.0-84973278471

Part of ISBN:

13616641 02681242

Contributors: Blaho, M.; Gregušová, D.; Haščík, Š.; Seifertová, A.; Ťapajna, M.; Šoltýs, J.; Šatka, A.; Nagy, L.; Chvála, A.; Marek, J. et al.
Source: Self-asserted source
Juraj Marek via Scopus - Elsevier

The secret of successful student team project

2016 11th European Workshop on Microelectronics Education, EWME 2016
2016 | Conference paper
EID:

2-s2.0-84981302920

Contributors: Marek, J.; Benko, P.; Chvála, A.; Kósa, A.; Pribytný, P.; Stuchlíková, L.; Donoval, D.
Source: Self-asserted source
Juraj Marek via Scopus - Elsevier

Advanced methodology for fast 3-D TCAD device/circuit electrothermal simulation and analysis of power HEMTs

IEEE Transactions on Electron Devices
2015 | Journal article
EID:

2-s2.0-85027948031

Part of ISBN:

00189383

Contributors: Chvála, A.; Donoval, D.; ͈atka, A.; Molnár, M.; Marek, J.; Pribytný, P.
Source: Self-asserted source
Juraj Marek via Scopus - Elsevier

Advanced methodology for fast 3-D TCAD electrothermal simulation of power HEMTs including package

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
2015 | Conference paper
EID:

2-s2.0-84959331603

Contributors: Chvala, A.; Donoval, D.; Molnar, M.; Marek, J.; Pribytny, P.
Source: Self-asserted source
Juraj Marek via Scopus - Elsevier

TCAD simulation methodology for 3-D advanced electro-physical and optical analysis

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
2015 | Conference paper
EID:

2-s2.0-84959375215

Contributors: Pribytny, P.; Molnar, M.; Chvala, A.; Marek, J.; Mikolasek, M.; Donoval, D.
Source: Self-asserted source
Juraj Marek via Scopus - Elsevier

3-D electrothermal device/circuit simulation of DC-DC converter module in multi-die IC

European Solid-State Device Research Conference
2014 | Conference paper
EID:

2-s2.0-84911962758

Part of ISBN:

19308876

Contributors: Chvála, A.; Donoval, D.; Nagy, L.; Marek, J.; Pribytný, P.; Molnár, M.
Source: Self-asserted source
Juraj Marek via Scopus - Elsevier

Advanced methodology for fast 3-D TCAD electrothermal simulation of power devices

Conference Proceedings - 10th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2014
2014 | Conference paper
EID:

2-s2.0-84921810432

Contributors: Chvála, A.; Donoval, D.; Marek, J.; Príbytný, P.; Molnár, M.
Source: Self-asserted source
Juraj Marek via Scopus - Elsevier

Compact model of power MOSFET with temperature dependent Cauer RC network for more accurate thermal simulations

Solid-State Electronics
2014 | Journal article
EID:

2-s2.0-84897712053

Part of ISBN:

00381101

Contributors: Marek, J.; Chvála, A.; Donoval, D.; Príbytný, P.; Molnár, M.; Mikolášek, M.
Source: Self-asserted source
Juraj Marek via Scopus - Elsevier

Electro-thermal analysis and optimisation of edge termination of power diode supported by 2-D/3-D numerical modelling and simulation

Journal of Physics: Conference Series
2014 | Conference paper
EID:

2-s2.0-84903639579

Part of ISBN:

17426596 17426588

Contributors: Príbytný, P.; Donoval, D.; Chvála, A.; Marek, J.; Molnár, M.
Source: Self-asserted source
Juraj Marek via Scopus - Elsevier

Fast 3-D electrothermal device/circuit simulation of power superjunction MOSFET based on sdevice and HSPICE interaction

IEEE Transactions on Electron Devices
2014 | Journal article
EID:

2-s2.0-84897916960

Part of ISBN:

00189383

Contributors: Chvála, A.; Donoval, D.; Marek, J.; Príbytný, P.; Molnár, M.; Mikolášek, M.
Source: Self-asserted source
Juraj Marek via Scopus - Elsevier

Influence of structure geometry and bulk traps on switching transients of InAlN/GaN HEMT

Conference Proceedings - 10th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2014
2014 | Conference paper
EID:

2-s2.0-84921825249

Contributors: Marek, J.; Šatka, A.; Donoval, D.; Molnár, M.; Priesol, J.; Chvála, A.; Pribytný, P.
Source: Self-asserted source
Juraj Marek via Scopus - Elsevier

Modeling and characterization of power InAlN/GaN HEMTs supported by 3-D electrothermal simulation

Conference Proceedings - 10th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2014
2014 | Conference paper
EID:

2-s2.0-84921749475

Contributors: Molnár, M.; Donoval, D.; Chvála, A.; Marek, J.; Príbytný, P.
Source: Self-asserted source
Juraj Marek via Scopus - Elsevier

Power MOSFET interactive e-learning course

10th European Workshop on Microelectronics Education, EWME 2014
2014 | Conference paper
EID:

2-s2.0-84906739524

Contributors: Marek, J.; Stuchliková, L.; Donoval, D.; Benko, P.; Chvála, A.; Molnár, M.
Source: Self-asserted source
Juraj Marek via Scopus - Elsevier

Simulation study of interface traps and bulk traps in n <sup>++</sup> GaN/ InAlN/AlN/GaN high electron mobility transistors

Applied Surface Science
2014 | Journal article
EID:

2-s2.0-84904760350

Part of ISBN:

01694332

Contributors: Molnár, M.; Donoval, D.; Kuzmík, J.; Marek, J.; Chvála, A.; Príbytný, P.; Mikolášek, M.; Rendek, K.; Palankovski, V.
Source: Self-asserted source
Juraj Marek via Scopus - Elsevier

Suppression of interface recombination by buffer layer for back contacted silicon heterojunction solar cells

Applied Surface Science
2014 | Journal article
EID:

2-s2.0-84904721393

Part of ISBN:

01694332

Contributors: Mikolášek, M.; Príbytný, P.; Donoval, D.; Marek, J.; Chvála, A.; Molnár, M.; Kováč, J.
Source: Self-asserted source
Juraj Marek via Scopus - Elsevier

TCAD simulation methodology for 3-D electro-physical and optical analysis

Conference Proceedings - 10th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2014
2014 | Conference paper
EID:

2-s2.0-84921717181

Contributors: Príbytný, P.; Molnár, M.; Chvála, A.; Marek, J.; Mikolášek, M.; Donoval, D.
Source: Self-asserted source
Juraj Marek via Scopus - Elsevier

Three-dimensional electro-thermal verilog-A model of power MOSFET for circuit simulation

Journal of Physics: Conference Series
2014 | Conference paper
EID:

2-s2.0-84903555082

Part of ISBN:

17426596 17426588

Contributors: Chvála, A.; Donoval, D.; Marek, J.; Príbytný, P.; Molnár, M.; Mikolasek, M.
Source: Self-asserted source
Juraj Marek via Scopus - Elsevier

Trapped charge effects in AlGaN/GaN metal-oxide-semiconductor structures with Al<inf>2</inf>O<inf>3</inf> and ZrO<inf>2</inf> gate insulator

Semiconductor Science and Technology
2014 | Journal article
EID:

2-s2.0-84896949262

Part of ISBN:

13616641 02681242

Contributors: Stoklas, R.; Gregušová, D.; Hušeková, K.; Marek, J.; Kordoš, P.
Source: Self-asserted source
Juraj Marek via Scopus - Elsevier

Fast 3D electro-thermal device/circuit simulation based on automated interaction of SDevice and HSpice simulators

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
2013 | Conference paper
EID:

2-s2.0-84891054328

Contributors: Chvala, A.; Donoval, D.; Marek, J.; Pribytny, P.; Molnar, M.
Source: Self-asserted source
Juraj Marek via Scopus - Elsevier
Items per page:
Page 1 of 2

Peer review (2 reviews for 2 publications/grants)

Review activity for Crystal research and technology. (1)
Review activity for Microelectronics and reliability. (1)