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Scopus Author ID: 57193684390

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Employment (4)

ÖKOLAB Gesellschaft für Umweltanalytik mbH: Wien, Wien, AT

2021-03 to present | Testing Analysis and Verification associate (RRP area)
Employment
Source: Self-asserted source
Arianna Lucia

Universität für Bodenkultur Wien: Vienna, AT

2020-09 to 2021-02 (Nawaro)
Employment
Source: Self-asserted source
Arianna Lucia

Wood K plus: Wien, AT

2017-03-01 to 2020-08 (Wood Materials Technologies)
Employment
Source: Self-asserted source
Arianna Lucia

LFoundry S r l: Avezzano, Abruzzo, IT

2015-11 to 2016-05
Employment
Source: Self-asserted source
Arianna Lucia

Education and qualifications (3)

Universität für Bodenkultur Wien: Wien, Wien, AT

2017-03-01 to 2020-06-05 | Ph.D. (Chemistry)
Education
Source: Self-asserted source
Arianna Lucia

Sapienza University of Rome: Rome, Lazio, IT

2013-01 to 2016-07 | Master Degree in Nanotechnology Engineering (Engineering)
Education
Source: Self-asserted source
Arianna Lucia

Sapienza University of Rome: Rome, Lazio, IT

2009-09 to 2012-12 | Bachelor degree in Chemical Engineering (Engineering)
Education
Source: Self-asserted source
Arianna Lucia

Works (5)

Wood-based resins and other bio-based binders for the production of mineral wool

Holzforschung
2020-06-25 | Journal article
DOI: 10.1515/hf-2019-0280
Contributors: Arianna Lucia; Hendrikus W.G. van Herwijnen; Thomas Rosenau
Source: check_circle
Crossref

A Direct Silanization Protocol for Dialdehyde Cellulose

Molecules
2020-05-25 | Journal article
DOI: 10.3390/molecules25102458
Part of ISSN: 1420-3049
Source: Self-asserted source
Arianna Lucia
grade
Preferred source (of 3)‎

Resource‐Saving Production of Dialdehyde Cellulose: Optimization of the Process at High Pulp Consistency

ChemSusChem
2019-10-21 | Journal article
DOI: 10.1002/cssc.201901885
Contributors: Arianna Lucia; Hendrikus W.G. van Herwijnen; Josua T. Oberlerchner; Thomas Rosenau; Marco Beaumont
Source: check_circle
Crossref

Capability of tip-enhanced Raman spectroscopy about nanoscale analysis of strained silicon for semiconductor devices production

Applied Physics Letters
2017 | Journal article
DOI: 10.1063/1.4978261
EID:

2-s2.0-85015808164
Contributors: Lucia, A.; Cacioppo, O.A.; Iulianella, E.; Latessa, L.; Moccia, G.; Passeri, D.; Rossi, M.
Source: Self-asserted source
Arianna Lucia via Scopus - Elsevier

Mechanical exfoliation and layer number identification of MoS<inf>2</inf>revisited

2D Materials
2017 | Journal article
DOI: 10.1088/2053-1583/aa8764
EID:

2-s2.0-85030125445
Contributors: Ottaviano, L.; Palleschi, S.; Perrozzi, F.; D'Olimpio, G.; Priante, F.; Donarelli, M.; Benassi, P.; Nardone, M.; Gonchigsuren, M.; Gombosuren, M. et al.
Source: Self-asserted source
Arianna Lucia via Scopus - Elsevier
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