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Power cycling analysis method for high-voltage SiC diodes

Microelectronics Reliability
2016 | Journal article
EID:

2-s2.0-84991711410

Contributors: Banu, V.; Soler, V.; Montserrat, J.; Millán, J.; Godignon, P.
Source: Self-asserted source
Viorel Banu via Scopus - Elsevier

Power cycling and surge current tester for SiC power devices

Proceedings of the International Semiconductor Conference, CAS
2016 | Conference paper
EID:

2-s2.0-85009383135

Contributors: Banu, V.; Brosselard, P.; Jorda, X.; Godignon, P.
Source: Self-asserted source
Viorel Banu via Scopus - Elsevier

Studies on floating contact press-pack diodes surge current capability

Materials Science Forum
2016 | Book
EID:

2-s2.0-84971509030

Contributors: Banu, V.; Berthou, M.; Montserrat, J.; Jordá, X.; Millán, J.; Godignon, P.
Source: Self-asserted source
Viorel Banu via Scopus - Elsevier

Design of voltage comparator integrated circuit with normally-on MESFETs on 4H-SiC semiconductor

Proceedings of the International Semiconductor Conference, CAS
2015 | Conference paper
EID:

2-s2.0-84959909970

Contributors: Banu, V.; Godignon, P.; Millan, J.
Source: Self-asserted source
Viorel Banu via Scopus - Elsevier

High-voltage SiC devices: Diodes and MOSFETs

Proceedings of the International Semiconductor Conference, CAS
2015 | Conference paper
EID:

2-s2.0-84959929428

Contributors: Millan, J.; Friedrichs, P.; Mihaila, A.; Soler, V.; Rebollo, J.; Banu, V.; Godignon, P.
Source: Self-asserted source
Viorel Banu via Scopus - Elsevier

SiC Integrated Circuit Control Electronics for High-Temperature Operation

IEEE Transactions on Industrial Electronics
2015 | Journal article
EID:

2-s2.0-84927618014

Contributors: Alexandru, M.; Banu, V.; Jorda, X.; Montserrat, J.; Vellvehi, M.; Tournier, D.; Millan, J.; Godignon, P.
Source: Self-asserted source
Viorel Banu via Scopus - Elsevier

Demonstration of temperature compensated voltage reference integrated circuit designed with 4H-SiC MESFETs

Proceedings of the International Semiconductor Conference, CAS
2014 | Conference paper
EID:

2-s2.0-84916620197

Contributors: Banu, V.; Godignon, P.; Alexandru, M.; Vellvehi, M.; Jordà, X.; Millan, J.
Source: Self-asserted source
Viorel Banu via Scopus - Elsevier

High temperature compensated voltage reference integrated circuits on 4H-SiC material

Romanian Journal of Information Science and Technology
2014 | Journal article
EID:

2-s2.0-84943240457

Contributors: Banu, V.; Godignon, P.; Alexandru, M.; Montserrat, J.; Jordà, X.; Millán, J.
Source: Self-asserted source
Viorel Banu via Scopus - Elsevier

High temperature electrical characterization of 4H-SiC MESFET basic logic gates

Materials Science Forum
2014 | Book
EID:

2-s2.0-84896071758

Contributors: Alexandru, M.; Banu, V.; Florentin, M.; Jordà, X.; Vellvehi, M.; Tournier, D.
Source: Self-asserted source
Viorel Banu via Scopus - Elsevier

Monolithic integration of power MESFET for high temperature SiC integrated circuits

Materials Science Forum
2014 | Book
EID:

2-s2.0-84896093976

Contributors: Banu, V.; Montserrat, J.; Alexandru, M.; Jordà, X.; Millán, J.; Godignon, P.
Source: Self-asserted source
Viorel Banu via Scopus - Elsevier

Structural analysis of SiC Schottky diodes failure mechanism under current overload

Journal of Physics D: Applied Physics
2014 | Journal article
EID:

2-s2.0-84892381576

Contributors: León, J.; Berthou, M.; Perpiñà, X.; Banu, V.; Montserrat, J.; Vellvehi, M.; Godignon, P.; Jordà, X.
Source: Self-asserted source
Viorel Banu via Scopus - Elsevier

Temperature effects on the ruggedness of SiC Schottky diodes under surge current

Microelectronics Reliability
2014 | Journal article
EID:

2-s2.0-84908509338

Contributors: León, J.; Perpiñà, X.; Banu, V.; Montserrat, J.; Berthou, M.; Vellvehi, M.; Godignon, P.; Jordà, X.
Source: Self-asserted source
Viorel Banu via Scopus - Elsevier

Thermomechanical assessment of die-attach materials for wide bandgap semiconductor devices and harsh environment applications

IEEE Transactions on Power Electronics
2014 | Journal article
EID:

2-s2.0-84893048436

Contributors: Navarro, L.A.; Perpina, X.; Godignon, P.; Montserrat, J.; Banu, V.; Vellvehi, M.; Jorda, X.
Source: Self-asserted source
Viorel Banu via Scopus - Elsevier

4H-SiC digital logic circuitry based on p<sup>+</sup> implanted isolation walls mesfet technology

Materials Science Forum
2013 | Book
EID:

2-s2.0-84874060927

Contributors: Alexandru, M.; Banu, V.; Godignon, P.; Vellvehi, M.; Millan, J.
Source: Self-asserted source
Viorel Banu via Scopus - Elsevier

4H-SiC MESFET specially designed and fabricated for high temperature integrated circuits

European Solid-State Device Research Conference
2013 | Conference paper
EID:

2-s2.0-84902214307

Contributors: Alexandru, M.; Banu, V.; Godignon, P.; Vellvehi, M.; Millan, J.
Source: Self-asserted source
Viorel Banu via Scopus - Elsevier

High temperature-low temperature coefficient analog voltage reference integrated circuit implemented with SiC MESFETs

European Solid-State Circuits Conference
2013 | Conference paper
EID:

2-s2.0-84891106491

Contributors: Banu, V.; Godignon, P.; Alexandru, M.; Vellvehi, M.; Jorda, X.; Millan, J.
Source: Self-asserted source
Viorel Banu via Scopus - Elsevier

Monolithic integration of high temperature silicon carbide integrated circuits

ECS Transactions
2013 | Conference paper
EID:

2-s2.0-84904889276

Contributors: Alexandru, M.; Banu, V.; Montserrat, J.; Godignon, P.; Millán, J.
Source: Self-asserted source
Viorel Banu via Scopus - Elsevier

Remarkable increase in surge current capability of SiC schottky diodes using press pack contacts

Materials Science Forum
2013 | Book
EID:

2-s2.0-84874082233

Contributors: Banu, V.; Godignon, P.; Jordá, X.; Perpinya, X.; Millán, J.
Source: Self-asserted source
Viorel Banu via Scopus - Elsevier

A HfO <inf>2</inf> based 800V/300°C Au-free AlGaN/GaN-on-Si HEMT technology

Proceedings of the International Symposium on Power Semiconductor Devices and ICs
2012 | Conference paper
EID:

2-s2.0-84864744753

Contributors: Fontserè, A.; Pérez-Tomás, A.; Banu, V.; Godignon, P.; Millán, J.; De Vleeschouwer, H.; Parsey, J.M.; Moens, P.
Source: Self-asserted source
Viorel Banu via Scopus - Elsevier

Design of digital electronics for high temperature using basic logic gates made of 4H-SiC MESFETs

Materials Science Forum
2012 | Book
EID:

2-s2.0-84856970541

Contributors: Alexandru, M.; Banu, V.; Vellevehi, M.; Godignon, P.; Millan, J.
Source: Self-asserted source
Viorel Banu via Scopus - Elsevier

Enhanced power cycling capability of SiC Schottky diodes using press pack contacts

Microelectronics Reliability
2012 | Journal article
EID:

2-s2.0-84866741406

Contributors: Banu, V.; Godignon, P.; Perpiñà, X.; Jordà, X.; Millán, J.
Source: Self-asserted source
Viorel Banu via Scopus - Elsevier

SiC Schottky Diode surge current analysis and application design using behavioral SPICE models

Proceedings of the International Semiconductor Conference, CAS
2012 | Conference paper
EID:

2-s2.0-84872876788

Contributors: Banu, V.; Godignon, P.; Jordá, X.; Alexandru, M.; Millan, J.
Source: Self-asserted source
Viorel Banu via Scopus - Elsevier

Thermal behavior of SiC power diodes

ECS Transactions
2012 | Conference paper
EID:

2-s2.0-84885787154

Contributors: Millán, J.; Godignon, P.; Jordà, X.; Berthou, M.; Banu, V.
Source: Self-asserted source
Viorel Banu via Scopus - Elsevier

Thermal cycling analysis of high temperature die-attach materials

Microelectronics Reliability
2012 | Journal article
EID:

2-s2.0-84866740156

Contributors: Navarro, L.A.; Perpiñà, X.; Vellvehi, M.; Banu, V.; Jordà, X.
Source: Self-asserted source
Viorel Banu via Scopus - Elsevier

Comparison between mesa isolation and p implantation isolation for 4H-SiC MESFET transistors

Proceedings of the International Semiconductor Conference, CAS
2011 | Conference paper
EID:

2-s2.0-84255177252

Contributors: Alexandru, M.; Banu, V.; Vellvehi, M.; Godignon, P.; Millan, J.
Source: Self-asserted source
Viorel Banu via Scopus - Elsevier

SiC Schottky diodes for harsh environment space applications

IEEE Transactions on Industrial Electronics
2011 | Journal article
EID:

2-s2.0-79959301039

Contributors: Godignon, P.; Jorda, X.; Vellvehi, M.; Perpina, X.; Banu, V.; Lopez, D.; Barbero, J.; Brosselard, P.; Massetti, S.
Source: Self-asserted source
Viorel Banu via Scopus - Elsevier

Demonstration of high temperature bandgap voltage reference feasibility on SiC material

Materials Science Forum
2010 | Book
EID:

2-s2.0-77955460501

Contributors: Banu, V.; Brosselard, P.; Jorda, X.; Godignon, P.; Millan, J.
Source: Self-asserted source
Viorel Banu via Scopus - Elsevier

Design of logic gates for high temperature and harsh radiation environment made of 4h-SiC MESFET

Proceedings of the International Semiconductor Conference, CAS
2010 | Conference paper
EID:

2-s2.0-78651087344

Contributors: Alexandru, M.; Banu, V.; Vellvehi, M.; Godignon, P.; Millan, J.
Source: Self-asserted source
Viorel Banu via Scopus - Elsevier

High temperature SiC Schottky diodes with stable operation for space application

Proceedings of the International Semiconductor Conference, CAS
2010 | Conference paper
EID:

2-s2.0-78651096345

Contributors: Banu, V.; Godignon, P.; Jorda, X.; Vellvehi, M.; Millan, J.; Brosselard, P.; Lopez, D.; Barbero, J.
Source: Self-asserted source
Viorel Banu via Scopus - Elsevier

Long term stability of packaged SiC Schottky diodes in the -170°C/+280°C temperature range

Proceedings of the International Symposium on Power Semiconductor Devices and ICs
2010 | Conference paper
EID:

2-s2.0-77956583910

Contributors: Godignon, P.; Jorda, X.; Banu, V.; Vellvehi, M.; Millan, J.; Brosselard, P.; Lopez, D.; Barbero, J.
Source: Self-asserted source
Viorel Banu via Scopus - Elsevier

Accelerated test for reliability analysis of SiC diodes

Proceedings of the International Symposium on Power Semiconductor Devices and ICs
2009 | Conference paper
EID:

2-s2.0-77949983902

Contributors: Banu, V.; Jordá, X.; Montserrat, J.; Godignon, P.; Millán, J.; Brosselard, P.
Source: Self-asserted source
Viorel Banu via Scopus - Elsevier

Novel structures of 3.3kV 4H-SiC BJTs to reduce the stacking faults expansion

Proceedings of the International Symposium on Power Semiconductor Devices and ICs
2009 | Conference paper
EID:

2-s2.0-77949921024

Contributors: Brosselard, P.; Tournier, D.; Banu, V.; Jordà, X.; Godignon, P.; JMillán; Bano, E.
Source: Self-asserted source
Viorel Banu via Scopus - Elsevier

Recent progress in 3.3 kV SiC diodes

Materials Science and Engineering B: Solid-State Materials for Advanced Technology
2009 | Journal article
EID:

2-s2.0-71749091295

Contributors: Brosselard, P.; Banu, V.; Camara, N.; Pérez-Tomás, A.
Source: Self-asserted source
Viorel Banu via Scopus - Elsevier

Behaviour of 1.2 kV SiC JBS diodes under repetitive high power stress

Microelectronics Reliability
2008 | Journal article
EID:

2-s2.0-50249164935

Contributors: Banu, V.; Brosselard, P.; Jordá, X.; Montserrat, J.; Godignon, P.; Millán, J.
Source: Self-asserted source
Viorel Banu via Scopus - Elsevier

Bipolar conduction impact on electrical characteristics and reliability of 1.2- and 3.5-kV 4H-SiC JBS diodes

IEEE Transactions on Electron Devices
2008 | Journal article
EID:

2-s2.0-50149106175

Contributors: Brosselard, P.; Camara, N.; Banu, V.; Jordà, X.; Vellvehi, M.; Godignon, P.; Millán, J.
Source: Self-asserted source
Viorel Banu via Scopus - Elsevier

Electrical performance at high temperature and surge current of 1.2 kv power rectifiers: comparison between si pin, 4h-sic schottky and jbs diodes

Proceedings of the International Semiconductor Conference, CAS
2008 | Conference paper
EID:

2-s2.0-67249159307

Contributors: Millán, J.; Banu, V.; Brosselard, P.; Jordà, X.; Pérez-Tomás, A.; Godignon, P.
Source: Self-asserted source
Viorel Banu via Scopus - Elsevier

Silicon carbide Schottky and ohmic contact process dependence

Diamond and Related Materials
2002 | Journal article
EID:

2-s2.0-0036508527

Contributors: Badila, M.; Brezeanu, G.; Millan, J.; Godignon, P.; Banu, V.
Source: Self-asserted source
Viorel Banu via Scopus - Elsevier

High power device for the electric safety of metallic structures

Proceedings of the International Semiconductor Conference, CAS
2001 | Conference paper
EID:

2-s2.0-0035744364

Contributors: Lingvay, I.; Banu, V.; Lingvay, C.; Rauta, I.; Apostolescu, M.; Stoian, F.
Source: Self-asserted source
Viorel Banu via Scopus - Elsevier

SiC power Schottky diodes industrial development

Proceedings of the International Semiconductor Conference, CAS
2001 | Conference paper
EID:

2-s2.0-0035744031

Contributors: Badila, M.; Brezeanu, G.; Banu, V.; Godignon, P.; Millan, J.; Jorda, X.; Draghici, F.
Source: Self-asserted source
Viorel Banu via Scopus - Elsevier

Silicon-compatible waveguides used for an integrated opto-mechanical pressure sensor

Optical Materials
2001 | Journal article
EID:

2-s2.0-0035361506

Contributors: Muller, R.; Obreja, P.; Banu, V.; Pavelescu, I.; Dascalu, D.
Source: Self-asserted source
Viorel Banu via Scopus - Elsevier

6H-SiC diodes with cellular structure to avoid micropipe effects

Materials Science Forum
2000 | Conference paper
EID:

2-s2.0-0343878031

Contributors: Badila, M.; Brezeanu, G.; Chante, J.P.; Locatelli, M.-L.; Millan, J.; Godignon, P.; Lebedev, A.A.; Lungu, P.; Banu, V.
Source: Self-asserted source
Viorel Banu via Scopus - Elsevier

6H-SiC Schottky barrier diodes with nearly ideal breakdown voltage

Materials Science Forum
2000 | Conference paper
EID:

2-s2.0-0033685267

Contributors: Brezeanu, G.; Badila, M.; Millan, J.; Godignon, P.; Locatelli, M.L.; Chante, J.P.; Lebedev, A.A.; Banu, V.
Source: Self-asserted source
Viorel Banu via Scopus - Elsevier

Electron irradiation efects on static &lt;100&gt; and &lt;111&gt; power MOS-gated devices

Proceedings of the International Semiconductor Conference, CAS
2000 | Conference paper
EID:

2-s2.0-0034454778

Contributors: Badila, M.; Millan, J.; Brezeanu, G.; Godignon, P.; Jordà, X.; Iliescu, E.; Banu, V.
Source: Self-asserted source
Viorel Banu via Scopus - Elsevier

Lift-off technology for SiC UV detectors

Diamond and Related Materials
2000 | Journal article
EID:

2-s2.0-12944311046

Contributors: Badila, M.; Brezeanu, G.; Millan, J.; Godignon, P.; Locatelli, M.L.; Chante, J.P.; Lebedev, A.; Lungu, P.; Dinca, G.; Banu, V. et al.
Source: Self-asserted source
Viorel Banu via Scopus - Elsevier

Post-irradiation effects in MOS structures

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
2000 | Journal article
EID:

2-s2.0-0033872837

Contributors: Iliescu, E.; Codreanu, C.; Badila, M.; Banu, V.; Badoiu, A.
Source: Self-asserted source
Viorel Banu via Scopus - Elsevier

Current-voltage characteristics of large area 6H-SiC pin diodes

Materials Science and Engineering B
1999 | Journal article
EID:

2-s2.0-0032659439

Contributors: Badila, M.; Tudor, B.; Brezeanu, Gh.; Locatelli, M.L.; Chante, J.P.; Millan, J.; Godignon, Ph.; Lebedev, A.; Banu, V.
Source: Self-asserted source
Viorel Banu via Scopus - Elsevier

Nearly ideal SiC Schottky barrier device edge termination

Proceedings of the International Semiconductor Conference, CAS
1999 | Conference paper
EID:

2-s2.0-0033331253

Contributors: Brezeanu, G.; Badila, M.; Millan, J.; Godignon, Ph.; Locatelli, Marie Laure; Chante, J.P.; Lebedev, A.; Dilimot, G.; Enache, I.; Bica, G. et al.
Source: Self-asserted source
Viorel Banu via Scopus - Elsevier

On the interpretation of high frequency capacitance data of 6H-SiC boron compensated pin junction

Materials Science and Engineering B
1999 | Journal article
EID:

2-s2.0-0032645015

Contributors: Brezeanu, G.; Badila, M.; Tudor, B.; Millan, J.; Godignon, P.; Chante, J.P.; Locatelli, M.L.; Lebedev, A.; Banu, V.
Source: Self-asserted source
Viorel Banu via Scopus - Elsevier

Preliminary study on VDMOS and IGBT encapsulation, reliability and lifetime killing

Proceedings of the International Semiconductor Conference, CAS
1999 | Conference paper
EID:

2-s2.0-0033310774

Contributors: Badila, M.; Jorda, X.; Millan, J.; Godignon, Ph.; Banu, V.; Brezeanu, Gh.; Spenea, M.Udrea; Staicu, Liliana; Iliescu, Elena; Bazu, M. et al.
Source: Self-asserted source
Viorel Banu via Scopus - Elsevier

Technique to avoid micropipe effects on 6H-SiC power devices

Proceedings of the International Semiconductor Conference, CAS
1999 | Conference paper
EID:

2-s2.0-0033357867

Contributors: Badila, M.; Brezeanu, G.; Chante, J.P.; Locatelli, Marie-Laure; Millan, J.; Godignon, P.; Lungu, P.; Mitu, F.; Draghici, F.; Campos, F.J. et al.
Source: Self-asserted source
Viorel Banu via Scopus - Elsevier
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