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Works (6)

A 200 °C SiC Phase-Leg Power Module with Integrated Gate Drivers: Development, Performance Assessment and Path Forward

IEEE Journal of Emerging and Selected Topics in Power Electronics
2025 | Journal article
DOI: 10.1109/JESTPE.2025.3550869
Contributors: Pengyu Lai; Sudharsan Chinnaiyan; Zhuowen Feng; Salahaldein Ahmed; H. Alan Mantooth; Shui-Qing Yu; Zhong Chen
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Characterization of Silicon Carbide Low-Voltage n/p-Channel MOSFETs at High Temperatures

IEEE Journal of the Electron Devices Society
2025 | Journal article
DOI: 10.1109/JEDS.2024.3506922
Contributors: Hui Wang; Pengyu Lai; Affan Abbasi; Md Maksudul Hossain; Asif Faruque; H. Alan Mantooth; Zhong Chen
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Electrical Safe Operating Area and Latent Damage of SiC Low-Voltage nMOS Under TLP and VF-TLP Stresses

IEEE Transactions on Electron Devices
2024-12 | Journal article
DOI: 10.1109/TED.2024.3475997
Contributors: Pengyu Lai; Hui Wang; H. Alan Mantooth; Zhong Chen
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Development of High-Temperature Optocouplers for Gate Drivers Integrated in High-Density Power Modules

IEEE Transactions on Industrial Electronics
2023-11 | Journal article
DOI: 10.1109/TIE.2022.3229324
Contributors: David Gonzalez; Pengyu Lai; Sudharsan Chinnaiyan; Salahaldein Ahmed; Binzhong Dong; Yipin Gong; H. Alan Mantooth; Shui-Qing Yu; Zhong Chen
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An Online Junction Temperature Monitoring Correction Method for SiC MOSFETs at Different Parasitic Parameters

IEEE Journal of Emerging and Selected Topics in Power Electronics
2022-10 | Journal article
DOI: 10.1109/JESTPE.2021.3117734
Contributors: Peng Sun; Yahui Guo; Tao Wu; Zhibin Zhao; Pengyu Lai; Zhong Chen; Lei Qi; Xiang Cui
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Area-Efficient Silicon Carbide SCR Device for On-Chip ESD Protection

IEEE Transactions on Electron Devices
2022-06 | Journal article
DOI: 10.1109/TED.2022.3166471
Contributors: Pengyu Lai; Hui Wang; Affan Abbasi; Sajib Roy; Arman Rashid; Alan Mantooth; Zhong Chen
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Peer review (3 reviews for 1 publication/grant)

Review activity for Microelectronics and reliability. (3)
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