Personal information

2D materials, charge and thermoelectric transport
Singapore, United States

Activities

Employment (3)

Harvard University: Cambridge, US

2025-01-06 to present | Postdoctoral Fellow (Department of Physics)
Employment
Source: Self-asserted source
Hong Kuan Ng

Institute of Materials Research and Engineering: Singapore, SG

2022-02-03 to 2024-12-30 | Scientist
Employment
Source: Self-asserted source
Hong Kuan Ng

National University of Singapore: Singapore, SG

2017-08-14 to 2022-01-17 (NGS / Physics)
Employment
Source: Self-asserted source
Hong Kuan Ng

Education and qualifications (2)

National University of Singapore: Singapore, SG

2017-08 to 2022-01 | Doctor of Philosophy (Physics)
Education
Source: Self-asserted source
Hong Kuan Ng

Nanyang Technological University: Singapore, SG

2013-08-14 to 2016-08-11 | Bachelors in Physics (Applied) (Physics)
Education
Source: Self-asserted source
Hong Kuan Ng

Works (20)

Emerging Opportunities for Ferroelectric Field‐Effect Transistors: Integration of 2D Materials

Advanced Functional Materials
2024-05 | Journal article
Part of ISSN: 1616-301X
Part of ISSN: 1616-3028
Contributors: Fang Yang; Hong Kuan Ng; Xin Ju; Weifan Cai; Jing Cao; Dongzhi Chi; Ady Suwardi; Guangwei Hu; Zhenhua Ni; Xiao Renshaw Wang et al.
Source: Self-asserted source
Hong Kuan Ng

Homogeneous in-plane WSe<sub>2</sub> P–N junctions for advanced optoelectronic devices

Nanoscale
2023 | Journal article
Part of ISSN: 2040-3364
Part of ISSN: 2040-3372
Contributors: Dewu Yue; Xin Ju; Tao Hu; Ximing Rong; Xinke Liu; Xiao Liu; Hong Kuan Ng; Dongzhi Chi; Xinzhong Wang; Jing Wu
Source: Self-asserted source
Hong Kuan Ng

Reply to: Mobility overestimation in molybdenum disulfide transistors due to invasive voltage probes

Nature Electronics
2023-11-22 | Journal article
Part of ISSN: 2520-1131
Contributors: Hong Kuan Ng; Dr. Du Xiang; Ady Suwardi; Guangwei Hu; Ke Yang; Yunshan Zhao; Tao Liu; Zhonghan Cao; Huajun liu; Shisheng Li et al.
Source: Self-asserted source
Hong Kuan Ng

Thermoelectric Properties of Polymorphic 2D‐TMDs

Two‐Dimensional Transition‐Metal Dichalcogenides: Phase Engineering and Applications in Electronics and Optoelectronics
2023-11-10 | Book chapter
Contributors: H. K. Ng; Yunshan Zhao; Dongzhi Chi; Jing Wu
Source: Self-asserted source
Hong Kuan Ng

Simultaneous optimization of phononic and electronic transport in two-dimensional Bi2O2Se by defect engineering

Science China Information Sciences
2023-06 | Journal article
Part of ISSN: 1674-733X
Part of ISSN: 1869-1919
Contributors: Fang Yang; Hong Kuan Ng; Jing Wu; Yunshan Zhao; Junpeng Lu
Source: Self-asserted source
Hong Kuan Ng

Designing good compatibility factor in segmented Bi0.5Sb1.5Te3 – GeTe thermoelectrics for high power conversion efficiency

Nano Energy
2022-06 | Journal article
Part of ISSN: 2211-2855
Contributors: Jing Cao; Xian Yi Tan; Ning Jia; Jie Zheng; Sheau Wei Chien; Hong Kuan Ng; Chee Kiang Ivan Tan; Hongfei Liu; Qiang Zhu; Suxi Wang et al.
Source: Self-asserted source
Hong Kuan Ng

Improving carrier mobility in two-dimensional semiconductors with rippled materials

Nature Electronics
2022-06-09 | Journal article
Contributors: Hong Kuan Ng; Du Xiang; Ady Suwardi; Guangwei Hu; Ke Yang; Yunshan Zhao; Tao Liu; Zhonghan Cao; Huajun Liu; Shisheng Li et al.
Source: check_circle
Crossref

Upcycling Silicon Photovoltaic Waste into Thermoelectrics (Adv. Mater. 19/2022)

Advanced Materials
2022-05 | Journal article
Part of ISSN: 0935-9648
Part of ISSN: 1521-4095
Contributors: Jing Cao; Ying Sim; Xian Yi Tan; Jie Zheng; Sheau Wei Chien; Ning Jia; Kewei Chen; Yeow Boon Tay; Jin‐Feng Dong; Le Yang et al.
Source: Self-asserted source
Hong Kuan Ng

Dynamic Tuning of Moiré Superlattice Morphology by Laser Modification

ACS Nano
2022-05-24 | Journal article
Part of ISSN: 1936-0851
Part of ISSN: 1936-086X
Contributors: Xinyun Wang; Yuzhou Zhao; Xiao Kong; Qi Zhang; Hong Kuan Ng; Dr. Sharon Xiaodai Lim; Yue Zheng; Xiao Wu; Kenji Watanabe; Qing-Hua Xu et al.
Source: Self-asserted source
Hong Kuan Ng

Suppressing Ge-vacancies to achieve high single-leg efficiency in GeTe with an ultra-high room temperature power factor

Journal of Materials Chemistry A
2021 | Journal article
EID:

2-s2.0-85118100733

Part of ISSN: 20507496 20507488
Contributors: Jia, N.; Cao, J.; Tan, X.Y.; Zheng, J.; Chien, S.W.; Yang, L.; Chen, K.; Ng, H.K.; Faye Duran, S.S.; Liu, H. et al.
Source: Self-asserted source
Hong Kuan Ng via Scopus - Elsevier

Erratum: Large enhancement of thermoelectric performance in MoS<inf>2</inf>/h-BN heterostructure due to vacancy-induced band hybridization (Proceedings of the National Academy of Sciences of the United States of America (2020) 117 (13929-13936) DOI: 10.1073/pnas.2007495117)

Proceedings of the National Academy of Sciences of the United States of America
2020 | Journal article
EID:

2-s2.0-85088881564

Part of ISSN: 10916490 00278424
Contributors: Wu, J.; Liu, Y.; Liu, Y.; Cai, Y.; Zhao, Y.; Ng, H.K.; Watanabe, K.; Taniguchi, T.; Zhang, G.; Qiu, C.-W. et al.
Source: Self-asserted source
Hong Kuan Ng via Scopus - Elsevier

Large enhancement of thermoelectric performance in MoS<inf>2</inf>/h-BN heterostructure due to vacancy-induced band hybridization

Proceedings of the National Academy of Sciences of the United States of America
2020 | Journal article
EID:

2-s2.0-85087093785

Part of ISSN: 10916490 00278424
Contributors: Wu, J.; Liu, Y.; Liu, Y.; Liu, Y.; Cai, Y.; Zhao, Y.; Ng, H.K.; Watanabe, K.; Taniguchi, T.; Zhang, G. et al.
Source: Self-asserted source
Hong Kuan Ng via Scopus - Elsevier

Thermoelectric Properties of Substoichiometric Electron Beam Patterned Bismuth Sulfide

ACS Applied Materials & Interfaces
2020-07-29 | Journal article
Contributors: Jose Recatala-Gomez; Hong Kuan Ng; Pawan Kumar; Ady Suwardi; Minrui Zheng; Mohamed Asbahi; Sudhiranjan Tripathy; Iris Nandhakumar; Mohammad S. M. Saifullah; Kedar Hippalgaonkar
Source: check_circle
Crossref
grade
Preferred source (of 3)‎

Effects of Structural Phase Transition on Thermoelectric Performance in Lithium-Intercalated Molybdenum Disulfide (Li <inf>x</inf> MoS <inf>2</inf> )

ACS Applied Materials and Interfaces
2019 | Journal article
EID:

2-s2.0-85063771487

Part of ISSN: 19448252 19448244
Contributors: Ng, H.K.; Abutaha, A.; Voiry, D.; Verzhbitskiy, I.; Cai, Y.; Zhang, G.; Liu, Y.; Wu, J.; Chhowalla, M.; Eda, G. et al.
Source: Self-asserted source
Hong Kuan Ng via Scopus - Elsevier

Inertial effective mass as an effective descriptor for thermoelectrics: Via data-driven evaluation

Journal of Materials Chemistry A
2019 | Journal article
EID:

2-s2.0-85074206992

Part of ISSN: 20507496 20507488
Contributors: Suwardi, A.; Bash, D.; Ng, H.K.; Gomez, J.R.; Repaka, D.V.M.; Kumar, P.; Hippalgaonkar, K.
Source: Self-asserted source
Hong Kuan Ng via Scopus - Elsevier

Kondo impurities in two dimensional MoS<inf>2</inf> for achieving ultrahigh thermoelectric powerfactor

arXiv
2019 | Other
EID:

2-s2.0-85093560917

Part of ISSN: 23318422
Contributors: Wu, J.; Liu, Y.; Liu, Y.; Cai, Y.; Zhao, Y.; Ng, H.K.; Watanabe, K.; Taniguchi, T.; Zhang, G.; Qiu, C. et al.
Source: Self-asserted source
Hong Kuan Ng via Scopus - Elsevier

Solution-processed n-type Bi <inf>2</inf> Te <inf>3−x</inf> Se <inf>x</inf> nanocomposites with enhanced thermoelectric performance via liquid-phase sintering,液相烧结增强溶液法制备的n型碲化铋基纳米复合材料的热电性能

Science China Materials
2019 | Journal article
EID:

2-s2.0-85050629424

Part of ISSN: 21994501 20958226
Contributors: Zhang, C.; Zhang, C.; Ng, H.; Xiong, Q.
Source: Self-asserted source
Hong Kuan Ng via Scopus - Elsevier

Predicting thermoelectric properties from crystal graphs and material descriptors - first application for functional materials

arXiv
2018 | Other
EID:

2-s2.0-85094248347

Part of ISSN: 23318422
Contributors: Laugier, L.; Recatala, J.; Ramasamy, S.; Chandrasekhar, V.R.; Bash, D.; Ng, H.K.; Foo, C.-S.; Hippalgaonkar, K.
Source: Self-asserted source
Hong Kuan Ng via Scopus - Elsevier

Effect of dimensionality on thermoelectric powerfactor of molybdenum disulfide

Journal of Applied Physics
2017 | Journal article
EID:

2-s2.0-85020000597

Part of ISSN: 10897550 00218979
Contributors: Ng, H.K.; Chi, D.; Hippalgaonkar, K.
Source: Self-asserted source
Hong Kuan Ng via Scopus - Elsevier

Minority Carrier Blocking to Enhance the Thermoelectric Performance of Solution-Processed Bi<inf>x</inf>Sb<inf>2-x</inf>Te<inf>3</inf> Nanocomposites via a Liquid-Phase Sintering Process

ACS Applied Materials and Interfaces
2017 | Journal article
EID:

2-s2.0-85017461968

Part of ISSN: 19448252 19448244
Contributors: Zhang, C.; Ng, H.; Li, Z.; Khor, K.A.; Xiong, Q.
Source: Self-asserted source
Hong Kuan Ng via Scopus - Elsevier

Peer review (1 review for 1 publication/grant)

Review activity for npj 2D materials and applications. (1)