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ResearcherID: P-2530-2014

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Employment (2)

Carnegie Mellon University: Pittsburgh, PA, US

1995-09-01 to present | Professor (Physics)
Employment
Source: Self-asserted source
Randall Feenstra

IBM Research: Yorktown Heights, NY, US

1982-06-01 to 1995-08-01 | Research Staff Member
Employment
Source: Self-asserted source
Randall Feenstra

Education and qualifications (2)

California Institute of Technology: Pasadena, CA, US

1978-09-01 to 1982-05-01 | Ph.D. (Applied Physics)
Education
Source: Self-asserted source
Randall Feenstra

University of British Columbia: Vancouver, BC, CA

1973-09-01 to 1978-05-01 | B.Ap.Sc. (Engineering Physics)
Education
Source: Self-asserted source
Randall Feenstra

Works (50 of 239)

Items per page:
Page 1 of 5

Erratum: “Acquisition and analysis of scanning tunneling spectroscopy data—WSe2 monolayer” [J. Vac. Sci. Technol. A 39, 011001 (2021)]

Journal of Vacuum Science & Technology A
2024-05-01 | Journal article
DOI: 10.1116/6.0003535
Contributors: Randall M. Feenstra; Grayson R. Frazier; Yi Pan; Stefan Fölsch; Yu-Chuan Lin; Bhakti Jariwala; Kehao Zhang; Joshua A. Robinson
Source: check_circle
Crossref

Acquisition and analysis of scanning tunneling spectroscopy data—WSe2 monolayer

Journal of Vacuum Science & Technology A
2021-01-01 | Journal article
DOI: 10.1116/6.0000684
Contributors: Randall M. Feenstra; Grayson R. Frazier; Yi Pan; Stefan Fölsch; Yu-Chuan Lin; Bhakti Jariwala; Kehao Zhang; Joshua A. Robinson
Source: check_circle
Crossref

Formation of graphene atop a Si adlayer on the C-face of SiC

Physical Review Materials
2019-08-19 | Journal article
DOI: 10.1103/PhysRevMaterials.3.084006
Contributors: Jun Li; Qingxiao Wang; Guowei He; Michael Widom; Lydia Nemec; Volker Blum; Moon Kim; Patrick Rinke; Randall M. Feenstra
Source: check_circle
Crossref

WSe 2 homojunctions and quantum dots created by patterned hydrogenation of epitaxial graphene substrates

2D Materials
2019-01-17 | Journal article
DOI: 10.1088/2053-1583/aaf58c
Contributors: Yi Pan; Stefan Fölsch; Yu-Chuan Lin; Bhakti Jariwala; Joshua A Robinson; Yifan Nie; Kyeongjae Cho; Randall M Feenstra
Source: check_circle
Crossref

Large scale 2D/3D hybrids based on gallium nitride and transition metal dichalcogenides

Nanoscale
2018 | Journal article
DOI: 10.1039/c7nr07586c
WOSUID:

WOS:000418621000035
Contributors: Zhang, Kehao; Jariwala, Bhakti; Li, Jun; Briggs, Natalie C.; Wang, Baoming; Ruzmetov, Dmitry; Burke, Robert A.; Lerach, Jordan O.; Ivanov, Tony G.; Haque, Md et al.
Source: Self-asserted source
Randall Feenstra via ResearcherID

Realizing Large-Scale, Electronic-Grade Two-Dimensional Semiconductors.

ACS nano
2018 | Journal article
DOI: 10.1021/acsnano.7b07059
WOSUID:

MEDLINE:29360349
Contributors: Lin, Yu-Chuan; Jariwala, Bhakti; Bersch, Brian M; Xu, Ke; Nie, Yifan; Wang, Baoming; Eichfeld, Sarah M; Zhang, Xiaotian; Choudhury, Tanushree H; Pan, Yi et al.
Source: Self-asserted source
Randall Feenstra via ResearcherID

Substitutional mechanism for growth of hexagonal boron nitride on epitaxial graphene

Applied Physics Letters
2018-07-16 | Journal article
DOI: 10.1063/1.5039823
Contributors: Patrick C. Mende; Jun Li; Randall M. Feenstra
Source: check_circle
Crossref

Quantum-Confined Electronic States Arising from the Moiré Pattern of MoS2–WSe2 Heterobilayers

Nano Letters
2018-03-14 | Journal article
DOI: 10.1021/acs.nanolett.7b05125
Contributors: Yi Pan; Stefan Fölsch; Yifan Nie; Dacen Waters; Yu-Chuan Lin; Bhakti Jariwala; Kehao Zhang; Kyeongjae Cho; Joshua A. Robinson; Randall M. Feenstra
Source: check_circle
Crossref

One dimensional metallic edges in atomically thin WSe 2 induced by air exposure

2D Materials
2018-03-09 | Journal article
DOI: 10.1088/2053-1583/aab0cd
Contributors: Rafik Addou; Christopher M Smyth; Ji-Young Noh; Yu-Chuan Lin; Yi Pan; Sarah M Eichfeld; Stefan Fölsch; Joshua A Robinson; Kyeongjae Cho; Randall M Feenstra et al.
Source: check_circle
Crossref

Magnitude of the current in 2D interlayer tunneling devices

Journal of Physics: Condensed Matter
2018-02-07 | Journal article
DOI: 10.1088/1361-648X/aaa4b0
Contributors: Randall M Feenstra; Sergio C de la Barrera; Jun Li; Yifan Nie; Kyeongjae Cho
Source: check_circle
Crossref

Carbon-assisted chemical vapor deposition of hexagonal boron nitride

2d Materials
2017 | Journal article
DOI: 10.1088/2053-1583/aa74a5
WOSUID:

WOS:000403671500001
Contributors: Ismach, Ariel; Chou, Harry; Mende, Patrick; Dolocan, Andrei; Addou, Rafik; Aloni, Shaul; Wallace, Robert; Feenstra, Randall; Ruoff, Rodney S.; Colombo, Luigi
Source: Self-asserted source
Randall Feenstra via ResearcherID

Characteristics of Interlayer Tunneling Field-Effect Transistors Computed by a "DFT-Bardeen" Method

Journal of Electronic Materials
2017 | Journal article
DOI: 10.1007/s11664-016-5120-2
WOSUID:

WOS:000392291200086
Contributors: Li, Jun; Nie, Yifan; Cho, Kyeongjae; Feenstra, Randall M.
Source: Self-asserted source
Randall Feenstra via ResearcherID

Characterization of hexagonal boron nitride layers on nickel surfaces by low-energy electron microscopy

Surface Science
2017 | Journal article
DOI: 10.1016/j.susc.2017.02.004
WOSUID:

WOS:000398009700006
Contributors: Mende, P. C.; Gao, Q.; Ismach, A.; Chou, H.; Widom, M.; Ruoff, R.; Colombo, L.; Feenstra, R. M.
Source: Self-asserted source
Randall Feenstra via ResearcherID

Epitaxial graphene homogeneity and quantum Hall effect in millimeter-scale devices

Carbon
2017 | Journal article
DOI: 10.1016/j.carbon.2016.12.087
WOSUID:

WOS:000395601300025
Contributors: Yang, Yanfei; Cheng, Guangjun; Mende, Patrick; Calizo, Irene G.; Feenstra, Randall M.; Chuang, Chiashain; Liu, Chieh-Wen; Liu, Chieh-I.; Jones, George R.; Walker, Angela R. Hight et al.
Source: Self-asserted source
Randall Feenstra via ResearcherID

Properties of synthetic epitaxial graphene/molybdenum disulfide lateral heterostructures

Carbon
2017 | Journal article
DOI: 10.1016/j.carbon.2017.09.058
WOSUID:

WOS:000413303500060
Contributors: Subramanian, Shruti; Deng, Donna D.; Xu, Ke; Simonson, Nicholas; Wang, Ke; Zhang, Kehao; Li, Jun; Feenstra, Randall; Fullerton-Shirey, Susan K.; Robinson, Joshua A.
Source: Self-asserted source
Randall Feenstra via ResearcherID

Growth and electronic properties of nanolines on TiO2-terminated SrTiO3(001) surfaces

Journal of Applied Physics
2017-09-28 | Journal article
DOI: 10.1063/1.5004982
Contributors: W. Yan; W. Sitaputra; M. Skowronski; R. M. Feenstra
Source: check_circle
Crossref

Chemically selective formation of Si-O-Al on SiGe(110) and (001) for ALD nucleation using H2O2(g)

Surface Science
2016 | Journal article
DOI: 10.1016/j.susc.2016.01.009
WOSUID:

WOS:000380600700044
Contributors: Park, Sang Wook; Kim, Hyonwoong; Chagarov, Evgueni; Siddiqui, Shariq; Sahu, Bhagawan; Yoshida, Naomi; Kachian, Jessica; Feenstra, Randall; Kummel, Andrew C.
Source: Self-asserted source
Randall Feenstra via ResearcherID

Formation of hexagonal boron nitride on graphene-covered copper surfaces

Journal of Materials Research
2016 | Journal article
DOI: 10.1557/jmr.2016.82
WOSUID:

WOS:000376178400013
Contributors: Gopalan, Devashish P.; Mende, Patrick C.; de la Barrera, Sergio C.; Dhingra, Shonali; Li, Jun; Zhang, Kehao; Simonson, Nicholas A.; Robinson, Joshua A.; Lu, Ning; Wang, Qingxiao et al.
Source: Self-asserted source
Randall Feenstra via ResearcherID

Scanning Tunneling Microscopy and Spectroscopy of Air Exposure Effects on Molecular Beam Epitaxy Grown WSe2 Monolayers and Bilayers

Acs Nano
2016 | Journal article
DOI: 10.1021/acsnano.5b07698
WOSUID:

WOS:000375245000042
Contributors: Park, Jun Hong; Vishwanath, Suresh; Liu, Xinyu; Zhou, Huawei; Eichfeld, Sarah M.; Fullerton-Shirey, Susan K.; Robinson, Joshua A.; Feenstra, Randall M.; Furdyna, Jacek; Jena, Debdeep et al.
Source: Self-asserted source
Randall Feenstra via ResearcherID

Thickness characterization of atomically thin WSe2 on epitaxial graphene by low-energy electron reflectivity oscillations

Journal of Vacuum Science & Technology B
2016 | Journal article
DOI: 10.1116/1.4954642
WOSUID:

WOS:000382207700070
Contributors: de la Barrera, Sergio C.; Lin, Yu-Chuan; Eichfeld, Sarah M.; Robinson, Joshua A.; Gao, Qin; Widom, Michael; Feenstra, Randall M.
Source: Self-asserted source
Randall Feenstra via ResearcherID

Tuning electronic transport in epitaxial graphene-based van der Waals heterostructures

Nanoscale
2016 | Journal article
DOI: 10.1039/c6nr01902a
WOSUID:

WOS:000374788800042
Contributors: Lin, Yu-Chuan; Li, Jun; de la Barrera, Sergio C.; Eichfeld, Sarah M.; Nie, Yifan; Addou, Rafik; Mende, Patrick C.; Wallace, Robert M.; Cho, Kyeongjae; Feenstra, Randall M. et al.
Source: Self-asserted source
Randall Feenstra via ResearcherID

Comprehensive structural and optical characterization of MBE grown MoSe2 on graphite, CaF2 and graphene

2d Materials
2015 | Journal article
DOI: 10.1088/2053-1583/2/2/024007
WOSUID:

WOS:000359968200010
Contributors: Vishwanath, Suresh; Liu, Xinyu; Rouvimov, Sergei; Mende, Patrick C.; Azcatl, Angelica; McDonnell, Stephen; Wallace, Robert M.; Feenstra, Randall M.; Furdyna, Jacek K.; Jena, Debdeep et al.
Source: Self-asserted source
Randall Feenstra via ResearcherID

Inelastic effects in low-energy electron reflectivity of two-dimensional materials

Journal of Vacuum Science & Technology B
2015 | Journal article
DOI: 10.1116/1.4903361
WOSUID:

WOS:000351751100005
Contributors: Gao, Qin; Mende, Patrick C.; Widom, Michael; Feenstra, Randall M.
Source: Self-asserted source
Randall Feenstra via ResearcherID

Oxygen vacancies on SrO-terminated SrTiO3(001) surfaces studied by scanning tunneling spectroscopy

Physical Review B
2015 | Journal article
DOI: 10.1103/PhysRevB.91.205408
WOSUID:

WOS:000354352200010
Contributors: Sitaputra, Wattaka; Sivadas, Nikhil; Skowronski, Marek; Xiao, Di; Feenstra, Randall M.
Source: Self-asserted source
Randall Feenstra via ResearcherID

Probing Critical Point Energies of Transition Metal Dichalcogenides: Surprising Indirect Gap of Single Layer WSe2

Nano Letters
2015 | Journal article
DOI: 10.1021/acs.nanolett.5b01968
WOSUID:

WOS:000363003100031
Contributors: Zhang, Chendong; Chen, Yuxuan; Johnson, Amber; Li, Ming-Yang; Li, Lain-Jong; Mende, Patrick C.; Feenstra, Randall M.; Shih, Chih-Kang
Source: Self-asserted source
Randall Feenstra via ResearcherID

Theory of resonant tunneling in bilayer-graphene/hexagonal-boron-nitride heterostructures

Applied Physics Letters
2015 | Journal article
DOI: 10.1063/1.4914324
WOSUID:

WOS:000351069900060
Contributors: de la Barrera, Sergio C.; Feenstra, Randall M.
Source: Self-asserted source
Randall Feenstra via ResearcherID
grade
Preferred source (of 2)‎

Topographic and electronic structure of cleaved SrTiO3(001) surfaces

Journal of Vacuum Science & Technology a
2015 | Journal article
DOI: 10.1116/1.4916890
WOSUID:

WOS:000355741800011
Contributors: Sitaputra, Wattaka; Skowronski, Marek; Feenstra, Randall M.
Source: Self-asserted source
Randall Feenstra via ResearcherID

Energy Gap Induced by Friedel Oscillations Manifested as Transport Asymmetry at Monolayer-Bilayer Graphene Boundaries

Physical Review X
2014 | Journal article
DOI: 10.1103/PhysRevX.4.011021
WOSUID:

WOS:000332160100001
Contributors: Clark, Kendal W.; Zhang, X. -G.; Gu, Gong; Park, Jewook; He, Guowei; Feenstra, R. M.; Li, An-Ping
Source: Self-asserted source
Randall Feenstra via ResearcherID

Formation of a Buffer Layer for Graphene on C-Face SiC{0001}

Journal of Electronic Materials
2014 | Journal article
DOI: 10.1007/s11664-013-2901-8
WOSUID:

WOS:000334182700003
Contributors: He, Guowei; Srivastava, N.; Feenstra, R. M.
Source: Self-asserted source
Randall Feenstra via ResearcherID

Hot carriers in epitaxial graphene sheets with and without hydrogen intercalation: role of substrate coupling

Nanoscale
2014 | Journal article
DOI: 10.1039/c4nr02980a
WOSUID:

WOS:000341020700018
Contributors: Liu, Fan-Hung; Lo, Shun-Tsung; Chuang, Chiashain; Woo, Tak-Pong; Lee, Hsin-Yen; Liu, Chieh-Wen; Liu, Chieh-I; Huang, Lung-I; Liu, Cheng-Hua; Yang, Yanfei et al.
Source: Self-asserted source
Randall Feenstra via ResearcherID

Theory of graphene-insulator-graphene tunnel junctions

Journal of Vacuum Science & Technology B
2014 | Journal article
DOI: 10.1116/1.4871760
WOSUID:

WOS:000341173200001
Contributors: de la Barrera, Sergio C.; Gao, Qin; Feenstra, Randall M.
Source: Self-asserted source
Randall Feenstra via ResearcherID

Tunneling characteristics in chemical vapor deposited graphene-hexagonal boron nitride-graphene junctions

Applied Physics Letters
2014 | Journal article
DOI: 10.1063/1.4870073
WOSUID:

WOS:000334078500076
Contributors: Roy, T.; Liu, L.; de la Barrera, S.; Chakrabarti, B.; Hesabi, Z. R.; Joiner, C. A.; Feenstra, R. M.; Gu, G.; Vogel, E. M.
Source: Self-asserted source
Randall Feenstra via ResearcherID

Atomic-Scale Mapping of Thermoelectric Power on Graphene: Role of Defects and Boundaries

Nano Letters
2013 | Journal article
DOI: 10.1021/nl401473j
WOSUID:

WOS:000321884300043
Contributors: Park, Jewook; He, Guowei; Feenstra, R. M.; Li, An-Ping
Source: Self-asserted source
Randall Feenstra via ResearcherID

Graphene Nucleation Density on Copper: Fundamental Role of Background Pressure

Journal of Physical Chemistry C
2013 | Journal article
DOI: 10.1021/jp4047648
WOSUID:

WOS:000330162600016
Contributors: Vlassiouk, Ivan; Smirnov, Sergei; Regmi, Murari; Surwade, Sumedh P.; Srivastava, Nishtha; Feenstra, Randall; Eres, Gyula; Parish, Chad; Lavrik, Nick; Datskos, Panos et al.
Source: Self-asserted source
Randall Feenstra via ResearcherID

Low-energy electron reflectivity from graphene

Physical Review B
2013 | Journal article
DOI: 10.1103/PhysRevB.87.041406
WOSUID:

WOS:000313942300001
Contributors: Feenstra, R. M.; Srivastava, N.; Gao, Qin; Widom, M.; Diaconescu, Bogdan; Ohta, Taisuke; Kellogg, G. L.; Robinson, J. T.; Vlassiouk, I. V.
Source: Self-asserted source
Randall Feenstra via ResearcherID

Low-energy electron reflectivity from graphene: First-principles computations and approximate models

Ultramicroscopy
2013 | Journal article
DOI: 10.1016/j.ultramic.2013.02.011
WOSUID:

WOS:000322320600016
Contributors: Feenstra, R. M.; Widom, M.
Source: Self-asserted source
Randall Feenstra via ResearcherID

Low-energy electron reflectivity of graphene on copper and other substrates

Physical Review B
2013 | Journal article
DOI: 10.1103/PhysRevB.87.245414
WOSUID:

WOS:000320165200007
Contributors: Srivastava, N.; Gao, Qin; Widom, M.; Feenstra, R. M.; Nie, Shu; McCarty, K. F.; Vlassiouk, I. V.
Source: Self-asserted source
Randall Feenstra via ResearcherID

Spatially Resolved Mapping of Electrical Conductivity across Individual Domain (Grain) Boundaries in Graphene

Acs Nano
2013 | Journal article
DOI: 10.1021/nn403056k
WOSUID:

WOS:000330016900055
Contributors: Clark, Kendal W.; Zhang, X. -G.; Vlassiouk, Ivan V.; He, Guowei; Feenstra, Randall M.; Li, An-Ping
Source: Self-asserted source
Randall Feenstra via ResearcherID

SymFET: A Proposed Symmetric Graphene Tunneling Field-Effect Transistor

Ieee Transactions on Electron Devices
2013 | Journal article
DOI: 10.1109/TED.2013.2238238
WOSUID:

WOS:000316820000007
Contributors: Zhao, Pei; Feenstra, Randall M.; Gu, Gong; Jena, Debdeep
Source: Self-asserted source
Randall Feenstra via ResearcherID

Charge transfer between isomer domains on n(+)-doped Si(111)-2 x 1: energetic stabilization

Journal of Physics-Condensed Matter
2012 | Journal article
DOI: 10.1088/0953-8984/24/35/354009
WOSUID:

WOS:000308001400011
Contributors: Feenstra, R. M.; Bussetti, G.; Bonanni, B.; Violante, A.; Goletti, C.; Chiaradia, P.; Betti, M. G.; Mariani, C.
Source: Self-asserted source
Randall Feenstra via ResearcherID

Evidences of electrochemical graphene functionalization and substrate dependence by Raman and scanning tunneling spectroscopies

Journal of Applied Physics
2012 | Journal article
DOI: 10.1063/1.4725489
WOSUID:

WOS:000305401400134
Contributors: Daniels, Kevin M.; Daas, B. K.; Srivastava, N.; Williams, C.; Feenstra, R. M.; Sudarshan, T. S.; Chandrashekhar, M. V. S.
Source: Self-asserted source
Randall Feenstra via ResearcherID

Formation of graphene on SiC(000(1)over-bar) surfaces in disilane and neon environments

Journal of Vacuum Science & Technology B
2012 | Journal article
DOI: 10.1116/1.4718365
WOSUID:

WOS:000306750700002
Contributors: He, Guowei; Srivastava, Nishtha; Feenstra, Randall M.
Source: Self-asserted source
Randall Feenstra via ResearcherID

Graphene formed on SiC under various environments: comparison of Si-face and C-face

Journal of Physics D-Applied Physics
2012 | Journal article
DOI: 10.1088/0022-3727/45/15/154001
WOSUID:

WOS:000302282900002
Contributors: Srivastava, N.; He, Guowei; Luxmi; Mende, P. C.; Feenstra, R. M.; Sun, Yugang
Source: Self-asserted source
Randall Feenstra via ResearcherID

Interface structure of graphene on SiC(000(1)over-bar)

Physical Review B
2012 | Journal article
DOI: 10.1103/PhysRevB.85.041404
WOSUID:

WOS:000299118500002
Contributors: Srivastava, N.; He, Guowei; Luxmi; Feenstra, R. M.
Source: Self-asserted source
Randall Feenstra via ResearcherID

Single-particle tunneling in doped graphene-insulator-graphene junctions

Journal of Applied Physics
2012 | Journal article
DOI: 10.1063/1.3686639
WOSUID:

WOS:000300948600049
Contributors: Feenstra, R. M.; Jena, Debdeep; Gu, Gong
Source: Self-asserted source
Randall Feenstra via ResearcherID

Structure and electronic spectroscopy of steps on GaAs(110) surfaces

Surface Science
2012 | Journal article
DOI: 10.1016/j.susc.2011.08.017
WOSUID:

WOS:000297880900008
Contributors: Gaan, S.; Feenstra, R. M.; Ebert, Ph.; Dunin-Borkowski, R. E.; Walker, J.; Towe, E.
Source: Self-asserted source
Randall Feenstra via ResearcherID

Coexistence of Negatively and Positively Buckled Isomers on n(+)-Doped Si(111) - 2 x 1

Physical Review Letters
2011 | Journal article
DOI: 10.1103/PhysRevLett.106.067601
WOSUID:

WOS:000287079100007
Contributors: Bussetti, G.; Bonanni, B.; Cirilli, S.; Violante, A.; Russo, M.; Goletti, C.; Chiaradia, P.; Pulci, O.; Palummo, M.; Del Sole, R. et al.
Source: Self-asserted source
Randall Feenstra via ResearcherID

Comparison of graphene formation on C-face and Si-face SiC {0001} surfaces

Physical Review B
2010 | Journal article
DOI: 10.1103/PhysRevB.82.235406
WOSUID:

WOS:000286765900008
Contributors: Luxmi; Srivastava, N.; He, Guowei; Feenstra, R. M.; Fisher, P. J.
Source: Self-asserted source
Randall Feenstra via ResearcherID

Electronic states of InAs/GaAs quantum dots by scanning tunneling spectroscopy

Applied Physics Letters
2010 | Journal article
DOI: 10.1063/1.3491551
WOSUID:

WOS:000282124700058
Contributors: Gaan, S.; He, Guowei; Feenstra, R. M.; Walker, J.; Towe, E.
Source: Self-asserted source
Randall Feenstra via ResearcherID

Formation of epitaxial graphene on SiC(0001) using vacuum or argon environments

Journal of Vacuum Science & Technology B
2010 | Journal article
DOI: 10.1116/1.3420393
WOSUID:

WOS:000281019500049
Contributors: Luxmi; Srivastava, N.; Feenstra, R. M.; Fisher, P. J.
Source: Self-asserted source
Randall Feenstra via ResearcherID
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Page 1 of 5

Peer review (16 reviews for 4 publications/grants)

Review activity for ACS applied nano materials. (1)
Review activity for ACS nano. (6)
Review activity for Journal of physical chemistry. (2)
Review activity for Nano letters. (7)
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