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Scopus Author ID: 7005042829

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Amrita Vishwa Vidyapeetham - Amritapuri Campus: Amritapuri, Kerala, IN

2004-10-05 to present | Professor (Electronics and Communication Engineering)
Employment
Source: Self-asserted source
Sundararaman Gopalan

Works (50 of 74)

Items per page:
Page 1 of 2

Effect of titanium carbide powder as a filler on the mechanical properties of silicone rubber

Materials Today: Proceedings
2021 | Conference paper
DOI: 10.1016/j.matpr.2020.11.714
EID:

2-s2.0-85111293283

Part of ISSN: 22147853
Contributors: Yadav, S.G.; Guntur, N.P.R.; Rahulan, N.; Gopalan, S.
Source: Self-asserted source
Sundararaman Gopalan via Scopus - Elsevier

Seismic Data Analytics for Estimating Seismic Landslide Hazard Using Artificial Accelerograms

Advances in Intelligent Systems and Computing
2021 | Book
DOI: 10.1007/978-981-33-4859-2_56
EID:

2-s2.0-85104786785

Part of ISSN: 21945365 21945357
Contributors: Sridharan, A.; Gopalan, S.
Source: Self-asserted source
Sundararaman Gopalan via Scopus - Elsevier

A Novel Methodology for the Classification of Debris Scars using Discrete Wavelet Transform and Support Vector Machine

Procedia Computer Science
2020 | Conference paper
DOI: 10.1016/j.procs.2020.04.066
EID:

2-s2.0-85086627210

Part of ISSN: 18770509
Contributors: Sridharan, A.; Remya Ajai, A.S.; Gopalan, S.
Source: Self-asserted source
Sundararaman Gopalan via Scopus - Elsevier

Analysis of active contours without edge-based segmentation technique for brain tumor classification using svm and knn classifiers

Lecture Notes in Electrical Engineering
2020 | Book
DOI: 10.1007/978-981-15-3992-3_1
EID:

2-s2.0-85087034327

Part of ISSN: 18761119 18761100
Contributors: Remya Ajai, A.S.; Gopalan, S.
Source: Self-asserted source
Sundararaman Gopalan via Scopus - Elsevier

Effect of silicon nitride on physical properties of SBR

Materials Today: Proceedings
2020 | Conference paper
DOI: 10.1016/j.matpr.2020.11.421
EID:

2-s2.0-85105560258

Part of ISSN: 22147853
Contributors: Harikrishnan, R.; Anirudh Mohan, T.P.; Rahulan, N.; Gopalan, S.
Source: Self-asserted source
Sundararaman Gopalan via Scopus - Elsevier

Effect of Titanium Carbide as a Filler on the Mechanical Properties of Styrene Butadiene Rubber

Materials Today: Proceedings
2020 | Conference paper
DOI: 10.1016/j.matpr.2020.04.475
EID:

2-s2.0-85090593026

Part of ISSN: 22147853
Contributors: Pratap Reddy Guntur, N.; Guruswamy Yadav, S.; Gopalan, S.
Source: Self-asserted source
Sundararaman Gopalan via Scopus - Elsevier

Predictive analysis of co-seismic rock fall hazard in hualien county Taiwan

Advances in Intelligent Systems and Computing
2020 | Book
DOI: 10.1007/978-981-15-1884-3_32
EID:

2-s2.0-85083675067

Part of ISSN: 21945365 21945357
Contributors: Sridharan, A.; Gopalan, S.
Source: Self-asserted source
Sundararaman Gopalan via Scopus - Elsevier

Correlations among properties of lithological units that contribute to earthquake induced landslides

Materials Today: Proceedings
2019 | Conference paper
DOI: 10.1016/j.matpr.2020.07.265
EID:

2-s2.0-85108089268

Part of ISSN: 22147853
Contributors: Sridharan, A.; Gopalan, S.
Source: Self-asserted source
Sundararaman Gopalan via Scopus - Elsevier

Effect of Boron Carbide on Physical Properties of Styrene Butadiene Rubber

Materials Today: Proceedings
2019 | Conference paper
DOI: 10.1016/j.matpr.2020.03.665
EID:

2-s2.0-85088024454

Part of ISSN: 22147853
Contributors: Remesh, A.; Abhijith, G.; Adwaith, P.; Adithyan, S.; Gopalan, S.; Rahulan, N.
Source: Self-asserted source
Sundararaman Gopalan via Scopus - Elsevier

Effect of lithium on the mechanical behavior of magnesium

Materials Today: Proceedings
2019 | Conference paper
DOI: 10.1016/j.matpr.2019.07.115
EID:

2-s2.0-85077537880

Part of ISSN: 22147853
Contributors: Rahulan, N.; Gopalan, S.; Kumaran, S.
Source: Self-asserted source
Sundararaman Gopalan via Scopus - Elsevier

Photovoltaic studies of hybrid metal oxide semiconductors as photo anode in dye sensitized solar cells

AIP Conference Proceedings
2019 | Conference paper
DOI: 10.1063/1.5130339
EID:

2-s2.0-85074752187

Part of ISSN: 15517616 0094243X
Contributors: Hegde, V.; Nivin, T.S.; Sreeja, S.D.B.; Gopalan, S.; Sreekala, C.O.
Source: Self-asserted source
Sundararaman Gopalan via Scopus - Elsevier

Piezoelectric energy harvesting system suitable for remotely placed sensors with inter-digitated design

AIP Conference Proceedings
2019 | Conference paper
DOI: 10.1063/1.5130262
EID:

2-s2.0-85074790502

Part of ISSN: 15517616 0094243X
Contributors: Sreeja, S.D.B.; Gopalan, S.; Sreekala, C.O.
Source: Self-asserted source
Sundararaman Gopalan via Scopus - Elsevier

Piezoelectric studies of PEDOT:PSS incorporated BaTiO<inf>3</inf>/ PDMS micro-generator

Materials Today: Proceedings
2019 | Conference paper
DOI: 10.1016/j.matpr.2020.05.042
EID:

2-s2.0-85098491726

Part of ISSN: 22147853
Contributors: Sreeja, S.D.B.; Gopalan, S.; Sreekala, C.O.
Source: Self-asserted source
Sundararaman Gopalan via Scopus - Elsevier

Prediction Studies of Landslides in the Mangan and Singtam Areas Triggered by 2011 Sikkim Earthquake

Communications in Computer and Information Science
2019 | Book
DOI: 10.1007/978-981-13-9942-8_57
EID:

2-s2.0-85070186556

Part of ISSN: 18650937 18650929
Contributors: Sridharan, A.; Gopalan, S.
Source: Self-asserted source
Sundararaman Gopalan via Scopus - Elsevier

Sustainable trade-off between reliability and electricity prices for geographically isolated communities

Energy Reports
2019 | Journal article
DOI: 10.1016/j.egyr.2019.09.064
EID:

2-s2.0-85073226916

Part of ISSN: 23524847
Contributors: Robert, F.C.; Sisodia, G.S.; Gopalan, S.
Source: Self-asserted source
Sundararaman Gopalan via Scopus - Elsevier

A critical review on the utilization of storage and demand response for the implementation of renewable energy microgrids

Sustainable Cities and Society
2018 | Journal article
DOI: 10.1016/j.scs.2018.04.008
EID:

2-s2.0-85047397686

Part of ISSN: 22106707
Contributors: Robert, F.C.; Sisodia, G.S.; Gopalan, S.
Source: Self-asserted source
Sundararaman Gopalan via Scopus - Elsevier

Assessing the performance of cmos amplifiers using high-k dielectric with metal gate on high mobility substrate

Communications in Computer and Information Science
2018 | Book
DOI: 10.1007/978-981-13-1810-8_28
EID:

2-s2.0-85060385917

Part of ISSN: 18650929
Contributors: Anand, D.; Swathi, M.; Purushothaman, A.; Gopalan, S.
Source: Self-asserted source
Sundararaman Gopalan via Scopus - Elsevier

Comparison of High K/Metal Gate Based CMOS Amplifiers Performance with Traditional Gate Stack Structure

Proceedings of the 4th International Conference on Electrical Energy Systems, ICEES 2018
2018 | Conference paper
DOI: 10.1109/ICEES.2018.8443264
EID:

2-s2.0-85053506547
Contributors: Swathi, M.; Anand, D.; Purushothaman, A.; Gopalan, S.
Source: Self-asserted source
Sundararaman Gopalan via Scopus - Elsevier

Effects of substrate heating and post-deposition annealing on characteristics of thin MOCVD HfO<inf>2</inf> films

IOP Conference Series: Materials Science and Engineering
2018 | Conference paper
DOI: 10.1088/1757-899X/310/1/012125
EID:

2-s2.0-85043715071

Part of ISSN: 1757899X 17578981
Contributors: Gopalan, S.; Ramesh, S.; Dutta, S.; Virajit Garbhapu, V.
Source: Self-asserted source
Sundararaman Gopalan via Scopus - Elsevier

Environmental friendly and cost effective approach to provide highly reliable electric supply to rural business and industries

Proceedings of 2017 IEEE International Conference on Technological Advancements in Power and Energy: Exploring Energy Solutions for an Intelligent Power Grid, TAP Energy 2017
2018 | Conference paper
DOI: 10.1109/TAPENERGY.2017.8397344
EID:

2-s2.0-85050117166
Contributors: Robert, F.C.; Gopalan, S.
Source: Self-asserted source
Sundararaman Gopalan via Scopus - Elsevier

From Solar Microgrid Simulation to Field Deployment: Accuracy and Uncertainties

7th International IEEE Conference on Renewable Energy Research and Applications, ICRERA 2018
2018 | Conference paper
DOI: 10.1109/ICRERA.2018.8566777
EID:

2-s2.0-85060598007
Contributors: Robert, F.C.; Gopalan, S.
Source: Self-asserted source
Sundararaman Gopalan via Scopus - Elsevier

Indicators for the usability of solar energy in India for the development of Islanded microgrids

Proceedings of 2017 IEEE International Conference on Technological Advancements in Power and Energy: Exploring Energy Solutions for an Intelligent Power Grid, TAP Energy 2017
2018 | Conference paper
DOI: 10.1109/TAPENERGY.2017.8397261
EID:

2-s2.0-85050107404
Contributors: Robert, F.C.; Gopalan, S.
Source: Self-asserted source
Sundararaman Gopalan via Scopus - Elsevier

Low cost, highly reliable rural electrification through a combination of grid extension and local renewable energy generation

Sustainable Cities and Society
2018 | Journal article
DOI: 10.1016/j.scs.2018.02.010
EID:

2-s2.0-85047405601

Part of ISSN: 22106707
Contributors: Robert, F.C.; Gopalan, S.
Source: Self-asserted source
Sundararaman Gopalan via Scopus - Elsevier

Mechanical behavior of Mg-Li-Al alloys

Materials Today: Proceedings
2018 | Conference paper
DOI: 10.1016/j.matpr.2018.06.123
EID:

2-s2.0-85054884003

Part of ISSN: 22147853
Contributors: Rahulan, N.; Gopalan, S.; Kumaran, S.
Source: Self-asserted source
Sundararaman Gopalan via Scopus - Elsevier

Solar electricity: An effective asset to supply urban loads in hot climates

AIP Conference Proceedings
2018 | Conference paper
DOI: 10.1063/1.5031974
EID:

2-s2.0-85046299265

Part of ISSN: 15517616 0094243X
Contributors: Robert, F.C.; Gopalan, S.
Source: Self-asserted source
Sundararaman Gopalan via Scopus - Elsevier

The critical role of anchor customers in rural microgrids: Impact of load factor on energy cost

6th International Conference on Computation of Power, Energy, Information and Communication, ICCPEIC 2017
2018 | Conference paper
DOI: 10.1109/ICCPEIC.2017.8290401
EID:

2-s2.0-85046659739
Contributors: Robert, F.C.; Sisodia, G.S.; Gopalan, S.
Source: Self-asserted source
Sundararaman Gopalan via Scopus - Elsevier

Al203 thin films on Silicon and Germanium substrates for CMOS and flash memory applications

AIP Conference Proceedings
2017 | Conference paper
DOI: 10.1063/1.4990218
EID:

2-s2.0-85026415463

Part of ISSN: 15517616 0094243X
Contributors: Gopalan, S.; Dutta, S.; Ramesh, S.; Prathapan, R.; Sreehari, G.
Source: Self-asserted source
Sundararaman Gopalan via Scopus - Elsevier

An Intelligent Approach to Strengthening of the Rural Electrical Power Supply Using Renewable Energy Resources

IOP Conference Series: Earth and Environmental Science
2017 | Conference paper
DOI: 10.1088/1755-1315/83/1/012005
EID:

2-s2.0-85029512534

Part of ISSN: 17551315 17551307
Contributors: Robert, F.C.; Sisodia, G.S.; Gopalan, S.
Source: Self-asserted source
Sundararaman Gopalan via Scopus - Elsevier

IoT Based Low Cost Single Sensor Node Remote Health Monitoring System

Procedia Computer Science
2017 | Conference paper
DOI: 10.1016/j.procs.2017.08.357
EID:

2-s2.0-85033460902

Part of ISSN: 18770509
Contributors: Garbhapu, V.V.; Gopalan, S.
Source: Self-asserted source
Sundararaman Gopalan via Scopus - Elsevier

Identification of current transport mechanism in Al<inf>2</inf>O<inf>3</inf> thin films for memory applications

Applied Nanoscience (Switzerland)
2015 | Journal article
DOI: 10.1007/s13204-014-0298-1
EID:

2-s2.0-85006338293

Part of ISSN: 21905517 21905509
Contributors: Ramesh, S.; Dutta, S.; Shankar, B.; Gopalan, S.
Source: Self-asserted source
Sundararaman Gopalan via Scopus - Elsevier

Effect of PVD process parameters on the quality and reliability of thin (10–30 nm) Al<inf>2</inf>O<inf>3</inf> dielectrics

Applied Nanoscience (Switzerland)
2012 | Journal article
DOI: 10.1007/s13204-011-0033-0
EID:

2-s2.0-85059748064

Part of ISSN: 21905517 21905509
Contributors: Dutta, S.; Ramesh, S.; Shankar, B.; Gopalan, S.
Source: Self-asserted source
Sundararaman Gopalan via Scopus - Elsevier

Low-cost remote patient monitoring system based on reduced platform computer technology

Telemedicine and e-Health
2011 | Journal article
DOI: 10.1089/tmj.2011.0017
EID:

2-s2.0-80052014745

Part of ISSN: 15305627 15563669
Contributors: Jacob, N.A.; Pillai, V.; Nair, S.; Prithviraj; Harrell, D.T.; Delhommer, R.; Chen, B.; Sanchez, I.; Almstrum, V.; Gopalan, S.
Source: Self-asserted source
Sundararaman Gopalan via Scopus - Elsevier

Electrical characterization and reliability analysis of HfO2-TiO2-Al MOSCAPs

World Academy of Science, Engineering and Technology
2009 | Journal article
EID:

2-s2.0-79954533684

Part of ISSN: 2010376X 20103778
Contributors: Shibesh Dutta, S.; Sivaramakrishnan, R.; Gopalan, S.; Shankar, B.
Source: Self-asserted source
Sundararaman Gopalan via Scopus - Elsevier

ALD of advanced high-k and metal gate stacks for MOS devices

Proceedings - Electrochemical Society
2005 | Conference paper
EID:

2-s2.0-31844444731
Contributors: Gutt, J.; Gopalan, S.; Brown, G.A.; Kirsch, P.D.; Peterson, J.J.; Gardner, M.I.; Li, H.-J.; Lysaght, P.; Alshareef, H.N.; Choi, K. et al.
Source: Self-asserted source
Sundararaman Gopalan via Scopus - Elsevier

High-k dielectric process development for enhanced electron mobility in high performance field effect transistors

Proceedings - Electrochemical Society
2005 | Conference paper
EID:

2-s2.0-33645668684
Contributors: Kirsch, P.D.; Peterson, J.; Gutt, J.; Gopalan, S.; Krishnan, S.; Li, H.-J.; Quevedo-Lopez, M.; Akbar, M.; Barnett, J.; Moumen, N. et al.
Source: Self-asserted source
Sundararaman Gopalan via Scopus - Elsevier

Experimental study of etched back thermal oxide for optimization of the Si/high-k interface

Materials Research Society Symposium Proceedings
2004 | Conference paper
DOI: 10.1557/proc-811-e1.4
EID:

2-s2.0-19944432750

Part of ISSN: 02729172
Contributors: Barnett, J.; Moumen, N.; Gutt, J.; Gardner, M.; Huffman, C.; Majhi, P.; Peterson, J.J.; Gopalan, S.; Foran, B.; Li, H.-J. et al.
Source: Self-asserted source
Sundararaman Gopalan via Scopus - Elsevier

Integration issues of high-k gate stack: Process-induced charging

IEEE International Reliability Physics Symposium Proceedings
2004 | Conference paper
DOI: 10.1109/RELPHY.2004.1315375
EID:

2-s2.0-84932082851

Part of ISSN: 15417026
Contributors: Bersuker, G.; Gutt, J.; Chaudhary, N.; Moumen, N.; Lee, B.H.; Barnett, J.; Gopalan, S.; Brown, B.; Kim, Y.; Young, C.D. et al.
Source: Self-asserted source
Sundararaman Gopalan via Scopus - Elsevier

Integration issues of high-k gate stack: Process-induced charging

Annual Proceedings - Reliability Physics (Symposium)
2004 | Conference paper
EID:

2-s2.0-3042660039

Part of ISSN: 00999512
Contributors: Bersuker, G.; Gutt, J.; Chaudhary, N.; Moumen, N.; Lee, B.H.; Barnett, J.; Gopalan, S.; Brown; Kim, Y.; Young, C.D. et al.
Source: Self-asserted source
Sundararaman Gopalan via Scopus - Elsevier

Intrinsic characteristics of high-k devices and implications of Fast Transient Charging Effects (FTCE)

Technical Digest - International Electron Devices Meeting, IEDM
2004 | Conference paper
EID:

2-s2.0-21644465398

Part of ISSN: 01631918
Contributors: Lee, B.H.; Young, C.D.; Choi, R.; Sim, J.H.; Bersuker, G.; Kang, C.Y.; Harris, R.; Brown, G.A.; Matthews, K.; Song, S.C. et al.
Source: Self-asserted source
Sundararaman Gopalan via Scopus - Elsevier

Subnanometer scaling of HfO<inf>2</inf>/metal electrode gate stacks

Electrochemical and Solid-State Letters
2004 | Journal article
DOI: 10.1149/1.1760712
EID:

2-s2.0-4344611701

Part of ISSN: 10990062
Contributors: Peterson, J.J.; Young, C.D.; Barnett, J.; Gopalan, S.; Gutt, J.; Lee, C.-H.; Li, H.-J.; Hou, T.-H.; Kim, Y.; Lim, C. et al.
Source: Self-asserted source
Sundararaman Gopalan via Scopus - Elsevier

Towards 0.5 nm EOT scaling of HfO<inf>2</inf>/ metal electrode gate stacks

Proceedings - Electrochemical Society
2004 | Conference paper
EID:

2-s2.0-20144389004
Contributors: Peterson, J.J.; Brown, G.A.; Matthews, K.; Gutt, J.; Gopalan, S.; Li, H.-J.; Kirsch, P.; Barnett, J.; Moumen, N.; Huffman, C. et al.
Source: Self-asserted source
Sundararaman Gopalan via Scopus - Elsevier

Charge trapping and electron mobility degradation in MOCVD hafnium silicate gate dielectric stack structures

Proceedings - Electrochemical Society
2003 | Conference paper
EID:

2-s2.0-3042855582
Contributors: Young, C.D.; Kerber, A.; Hou, T.H.; Cartier, E.; Brown, G.A.; Bersuker, G.; Kim, Y.; Lim, C.; Gutt, J.; Lysaght, P. et al.
Source: Self-asserted source
Sundararaman Gopalan via Scopus - Elsevier

EOT scaling and device issues for high-k gate dielectrics

Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003
2003 | Conference paper
DOI: 10.1109/IWGI.2003.159206
EID:

2-s2.0-84945115813
Contributors: Gardner, M.I.; Gopalan, S.; Gutt, J.; Peterson, J.; Li, H.-J.; Huff, H.R.
Source: Self-asserted source
Sundararaman Gopalan via Scopus - Elsevier

High-performance TaN/HfSiON/Si metal-oxide-semiconductor structures prepared by NH<inf>3</inf> post-deposition anneal

Applied Physics Letters
2003 | Journal article
DOI: 10.1063/1.1544062
EID:

2-s2.0-0037451239

Part of ISSN: 00036951
Contributors: Akbar, M.S.; Gopalan, S.; Cho, H.-J.; Onishi, K.; Choi, R.; Nieh, R.; Kang, C.S.; Kim, Y.H.; Han, J.; Krishnan, S. et al.
Source: Self-asserted source
Sundararaman Gopalan via Scopus - Elsevier

Improvement of surface carrier mobility of HfO<inf>2</inf> MOSFETs by high-temperature forming gas annealing

IEEE Transactions on Electron Devices
2003 | Journal article
DOI: 10.1109/TED.2002.807447
EID:

2-s2.0-0037687347

Part of ISSN: 00189383
Contributors: Onishi, K.; Kang, C.S.; Choi, R.; Cho, H.-J.; Gopalan, S.; Nieh, R.E.; Krishnan, S.A.; Lee, J.C.
Source: Self-asserted source
Sundararaman Gopalan via Scopus - Elsevier

Sub-nanometer high-k gate stack scaling using the HF-last/NH<inf>3</inf> anneal interface

Proceedings - Electrochemical Society
2003 | Conference paper
EID:

2-s2.0-3042717138
Contributors: Peterson, J.J.; Barnett, J.; Young, C.D.; Hou, T.-H.; Gutt, J.; Gopalan, S.; Lee, C.-H.; Li, H.-J.; Moumen, N.; Chaudhary, N. et al.
Source: Self-asserted source
Sundararaman Gopalan via Scopus - Elsevier

Area dependence of TDDB characteristics for HfO<inf>2</inf> gate dielectrics

IEEE Electron Device Letters
2002 | Journal article
DOI: 10.1109/LED.2002.803751
EID:

2-s2.0-18644367764

Part of ISSN: 07413106
Contributors: Kim, Y.H.; Onishi, K.; Kang, C.S.; Cho, H.-J.; Nieh, R.; Gopalan, S.; Choi, R.; Han, J.; Krishnan, S.; Lee, J.C.
Source: Self-asserted source
Sundararaman Gopalan via Scopus - Elsevier

Bonding states and electrical properties of ultrathin HfO<inf>x</inf>N <inf>y</inf> gate dielectrics

Applied Physics Letters
2002 | Journal article
DOI: 10.1063/1.1510155
EID:

2-s2.0-79956030489

Part of ISSN: 00036951
Contributors: Kang, C.S.; Cho, H.-J.; Onishi, K.; Nieh, R.; Choi, R.; Gopalan, S.; Krishnan, S.; Han, J.H.; Lee, J.C.
Source: Self-asserted source
Sundararaman Gopalan via Scopus - Elsevier

Charging effects on reliability of HfO<inf>2</inf> devices with polysilicon gate electrode

IEEE International Reliability Physics Symposium Proceedings
2002 | Conference paper
DOI: 10.1109/RELPHY.2002.996675
EID:

2-s2.0-84949233726

Part of ISSN: 15417026
Contributors: Onishi, K.; Kang, C.S.; Choi, R.; Cho, H.-J.; Gopalan, S.; Nieh, R.; Krishnan, S.; Lee, J.C.
Source: Self-asserted source
Sundararaman Gopalan via Scopus - Elsevier

Charging effects on reliability of HfO<inf>2</inf> devices with polysilicon gate electrode

Annual Proceedings - Reliability Physics (Symposium)
2002 | Conference paper
EID:

2-s2.0-0036082008

Part of ISSN: 00999512
Contributors: Onishi, K.; Kang, C.S.; Choi, R.; Cho, H.-J.; Gopalan, S.; Nieh, R.; Krishnan, S.; Lee, J.C.
Source: Self-asserted source
Sundararaman Gopalan via Scopus - Elsevier
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