Personal information

No personal information available

Activities

Collapse all

Works (35)

A FeFET-Based Hybrid Memory Accessible by Content and by Address

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
2022-06 | Journal article
DOI: 10.1109/JXCDC.2022.3168057
Contributors: Cedric Marchand; Ian O'Connor; Mayeul Cantan; Evelyn T. Breyer; Stefan Slesazeck; Thomas Mikolajick
Source: check_circle
Crossref

C-AND: Mixed Writing Scheme for Disturb Reduction in 1T Ferroelectric FET Memory

IEEE Transactions on Circuits and Systems I: Regular Papers
2022-04 | Journal article
DOI: 10.1109/TCSI.2021.3139736
Contributors: Mor M. Dahan; Evelyn T. Breyer; Stefan Slesazeck; Thomas Mikolajick; Shahar Kvatinsky
Source: check_circle
Crossref

Development and Investigation of Novel Logic-in-Memory and Nonvolatile Logic Circuits Utilizing Hafnium Oxide-Based Ferroelectric Field-Effect Transistors

BoD – Books on Demand
2022-02-08 | Book
Source: Self-asserted source
Evelyn T. Breyer

Modelling of vertical and ferroelectric junctionless technology for efficient 3D neural network compute cube dedicated to embedded artificial intelligence

2021 IEEE International Electron Devices Meeting (IEDM)
2021-12-11 | Conference paper
DOI: 10.1109/iedm19574.2021.9720572
Source: Self-asserted source
Evelyn T. Breyer

Effect of the Si Doping Content in HfO2 Film on the Key Performance Metrics of Ferroelectric FETs

IEEE Transactions on Electron Devices
2021-09 | Journal article
DOI: 10.1109/TED.2021.3100005
Contributors: Halid Mulaosmanovic; Stefan Dunkel; Dominik Kleimaier; Amine el Kacimi; Sven Beyer; Evelyn T. Breyer; Thomas Mikolajick; Stefan Slesazeck
Source: check_circle
Crossref

Ferroelectric field-effect transistors based on HfO2: a review

Nanotechnology
2021-07-28 | Journal article
DOI: 10.1088/1361-6528/ac189f
Part of ISSN: 0957-4484
Part of ISSN: 1361-6528
Source: Self-asserted source
Evelyn T. Breyer

FeFET based Logic-in-Memory: an overview

2021 16th International Conference on Design & Technology of Integrated Systems in Nanoscale Era (DTIS)
2021-06-28 | Conference paper
DOI: 10.1109/dtis53253.2021.9505078
Source: Self-asserted source
Evelyn T. Breyer

Perspective on ferroelectric, hafnium oxide based transistors for digital beyond von-Neumann computing

Applied Physics Letters
2021-02-01 | Journal article
DOI: 10.1063/5.0035281
Contributors: Evelyn T. Breyer; Halid Mulaosmanovic; Thomas Mikolajick; Stefan Slesazeck
Source: check_circle
Crossref

Electrical Interface Characterization of Ultrathin Amorphous Silicon Layers on Crystalline Silicon

physica status solidi (a)
2021-01 | Journal article
DOI: 10.1002/pssa.202000079
Part of ISSN: 1862-6300
Part of ISSN: 1862-6319
Source: Self-asserted source
Evelyn T. Breyer

Compact FeFET Circuit Building Blocks for Fast and Efficient Nonvolatile Logic-in-Memory

IEEE Journal of the Electron Devices Society
2020 | Journal article
DOI: 10.1109/JEDS.2020.2987084
Contributors: Evelyn T. Breyer; Halid Mulaosmanovic; Jens Trommer; Thomas Melde; Stefan Dunkel; Martin Trentzsch; Sven Beyer; Stefan Slesazeck; Thomas Mikolajick
Source: check_circle
Crossref

Interplay Between Switching and Retention in HfOâ‚‚-Based Ferroelectric FETs

IEEE Transactions on Electron Devices
2020 | Journal article
DOI: 10.1109/ted.2020.3004033
Part of ISSN: 0018-9383
Part of ISSN: 1557-9646
Source: Self-asserted source
Evelyn T. Breyer

Investigation of Accumulative Switching in Ferroelectric FETs: Enabling Universal Modeling of the Switching Behavior

IEEE Transactions on Electron Devices
2020-12 | Journal article
DOI: 10.1109/TED.2020.3031249
Contributors: Halid Mulaosmanovic; Stefan Dunkel; Martin Trentzsch; Sven Beyer; Evelyn T. Breyer; Thomas Mikolajick; Stefan Slesazeck
Source: check_circle
Crossref

Flexible Memory, Bit-Passing and Mixed Logic/Memory Operation of two Intercoupled FeFET Arrays

2020 IEEE International Symposium on Circuits and Systems (ISCAS)
2020-10 | Conference paper
DOI: 10.1109/iscas45731.2020.9181279
Source: Self-asserted source
Evelyn T. Breyer

Frequency Mixing with HfO2-Based Ferroelectric Transistors

ACS Applied Materials & Interfaces
2020-10-07 | Journal article
DOI: 10.1021/acsami.0c11155
Part of ISSN: 1944-8244
Part of ISSN: 1944-8252
Source: Self-asserted source
Evelyn T. Breyer

Impact of Read Operation on the Performance of HfO2-Based Ferroelectric FETs

IEEE Electron Device Letters
2020-09 | Journal article
DOI: 10.1109/LED.2020.3007220
Contributors: Halid Mulaosmanovic; Stefan Dunkel; Johannes Muller; Martin Trentzsch; Sven Beyer; Evelyn T. Breyer; Thomas Mikolajick; Stefan Slesazeck
Source: check_circle
Crossref

HfO2-based ferroelectric FETs: Performance of single devices and mini-arrays

2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)
2020-08 | Conference paper
DOI: 10.1109/vlsi-tsa48913.2020.9203615
Source: Self-asserted source
Evelyn T. Breyer

FeFET: A versatile CMOS compatible device with game-changing potential

2020 IEEE International Memory Workshop (IMW)
2020-05 | Conference paper
DOI: 10.1109/imw48823.2020.9108150
ISBN: 9781728163062
Source: Self-asserted source
Evelyn T. Breyer

Reconfigurable frequency multiplication with a ferroelectric transistor

Nature Electronics
2020-05-18 | Journal article
DOI: 10.1038/s41928-020-0413-0
Contributors: Halid Mulaosmanovic; Evelyn T. Breyer; Thomas Mikolajick; Stefan Slesazeck
Source: check_circle
Crossref

Switching and Charge Trapping in HfO2-based Ferroelectric FETs: An Overview and Potential Applications

2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
2020-04 | Conference paper
DOI: 10.1109/edtm47692.2020.9118005
ISBN: 9781728125398
Source: Self-asserted source
Evelyn T. Breyer

Chapter 10.6 - Ferroelectric Devices for Logic in Memory

Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices
2019 | Book chapter
DOI: https://doi.org/10.1016/B978-0-08-102430-0.00024-3
Part of ISBN: 978-0-08-102430-0
Source: Self-asserted source
Evelyn T. Breyer

Ferroelectric FETs With 20-nm-Thick HfOâ‚‚ Layer for Large Memory Window and High Performance

IEEE Transactions on Electron Devices
2019 | Journal article
DOI: 10.1109/ted.2019.2930749
Part of ISSN: 0018-9383
Part of ISSN: 1557-9646
Source: Self-asserted source
Evelyn T. Breyer

Recovery of Cycling Endurance Failure in Ferroelectric FETs by Self-Heating

IEEE Electron Device Letters
2019 | Journal article
DOI: 10.1109/LED.2018.2889412
Source: Self-asserted source
Evelyn T. Breyer

A 2TnC ferroelectric memory gain cell suitable for compute-in-memory and neuromorphic application

2019 IEEE International Electron Devices Meeting (IEDM)
2019-12 | Conference paper
DOI: 10.1109/iedm19573.2019.8993663
ISBN: 9781728140322
Source: Self-asserted source
Evelyn T. Breyer

Demonstration of BEOL-compatible ferroelectric Hf0.5Zr0.5O2 scaled FeRAM co-integrated with 130nm CMOS for embedded NVM applications

2019 IEEE International Electron Devices Meeting (IEDM)
2019-12 | Conference paper
DOI: 10.1109/iedm19573.2019.8993485
Source: Self-asserted source
Evelyn T. Breyer

Next Generation Ferroelectric Memories enabled by Hafnium Oxide

2019 IEEE International Electron Devices Meeting (IEDM)
2019-12 | Conference paper
DOI: 10.1109/iedm19573.2019.8993447
Source: Self-asserted source
Evelyn T. Breyer

Adoption of 2T2C ferroelectric memory cells for logic operation

2019 26th IEEE International Conference on Electronics, Circuits and Systems (ICECS)
2019-11 | Conference paper
DOI: 10.1109/icecs46596.2019.8965155
ISBN: 9781728109961
Source: Self-asserted source
Evelyn T. Breyer

Simulation of integrate-and-fire neuron circuits using HfO2-based ferroelectric field effect transistors

2019 26th IEEE International Conference on Electronics, Circuits and Systems (ICECS)
2019-11 | Conference paper
DOI: 10.1109/icecs46596.2019.8965004
Source: Self-asserted source
Evelyn T. Breyer

Ultra-dense co-integration of FeFETs and CMOS logic enabling very-fine grained Logic-in-Memory

ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC)
2019-09 | Conference paper
DOI: 10.1109/essderc.2019.8901735
ISBN: 9781728115399
Source: Self-asserted source
Evelyn T. Breyer

Uniting The Trinity of Ferroelectric HfO2 Memory Devices in a Single Memory Cell

2019 IEEE 11th International Memory Workshop (IMW)
2019-05 | Conference paper
DOI: 10.1109/imw.2019.8739742
ISBN: 9781728109817
Source: Self-asserted source
Evelyn T. Breyer

Computing with ferroelectric FETs: Devices, models, systems, and applications

2018 Design, Automation Test in Europe Conference Exhibition (DATE)
2018 | Conference paper
DOI: 10.23919/DATE.2018.8342213
Source: Self-asserted source
Evelyn T. Breyer

Demonstration of versatile nonvolatile logic gates in 28nm HKMG FeFET technology

2018 IEEE International Symposium on Circuits and Systems (ISCAS)
2018 | Conference paper
DOI: 10.1109/ISCAS.2018.8351408
Source: Self-asserted source
Evelyn T. Breyer

Prospects for energy-efficient edge computing with integrated HfO2-based ferroelectric devices

2018 IFIP/IEEE International Conference on Very Large Scale Integration (VLSI-SoC)
2018 | Conference paper
DOI: 10.1109/VLSI-SoC.2018.8644809
Source: Self-asserted source
Evelyn T. Breyer

A computational study of hafnia-based ferroelectric memories: from ab initio via physical modeling to circuit models of ferroelectric device

Journal of Computational Electronics
2017 | Journal article
DOI: 10.1007/s10825-017-1053-0
Source: Self-asserted source
Evelyn T. Breyer

Reconfigurable NAND/NOR logic gates in 28 nm HKMG and 22 nm FD-SOI FeFET technology

2017 IEEE International Electron Devices Meeting (IEDM)
2017 | Conference paper
DOI: 10.1109/IEDM.2017.8268471
Source: Self-asserted source
Evelyn T. Breyer

Molecular Orientation of Copper Phthalocyanine Molecules on Crystalline and Amorphous Silicon Substrates

2012-10-12 | Conference paper
DOI: 10.1380/ejssnt.2012.553
Source: Self-asserted source
Evelyn T. Breyer
How many people are using ORCID?