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researchgate page

Other IDs

Scopus Author ID: 56673885000
ResearcherID: J-1157-2017

Keywords

New materials for novel structures, Quantum physics, Solid state physics, Electronic transport, 2D materials

Countries

Iran

Activities

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Employment (1)

University of Texas at Dallas: Richardson, TX, US

2018 to 2019 | Visiting researcher (Materials Science and Engineering)
Employment
Source: Self-asserted source
Mohammad Mahdi Khatami

Education and qualifications (3)

Tarbiat Modares University: Tehran, Tehran, IR

2014 to 2020-06-08 | Doctor of Philosophy (Ph.D.), Electrical Engineering- Electronics (Electrical and Computer Engineering)
Education
Source: Self-asserted source
Mohammad Mahdi Khatami

Amirkabir University of Technology: Tehran, Tehran, IR

2011 to 2014 | Master's Degree, Electrical Engineering-Micro Electronics (Electrical Engineering)
Education
Source: Self-asserted source
Mohammad Mahdi Khatami

Zanjan University: Zanjan, Zanjan, IR

2007 to 2011 | Bachelor's Degree, Electrical and Electronics Engineering (Electrical and Computer Engineering)
Education
Source: Self-asserted source
Mohammad Mahdi Khatami

Works (9)

First-principles study of electronic transport in germanane and hexagonal boron nitride

Physical Review B
2021-12-20 | Journal article
DOI: 10.1103/PhysRevB.104.235424
Contributors: Mohammad Mahdi Khatami; Maarten L. Van de Put; William G. Vandenberghe
Source: check_circle
Crossref

BSIM3 model parameter extraction and performance analysis of a strained p-MOSFET for digital applications

Journal of Computational Electronics
2021-02 | Journal article
DOI: 10.1007/s10825-020-01584-5
Part of ISSN: 1569-8025
Part of ISSN: 1572-8137
Contributors: Mohammad Mahdi Khatami
Source: Self-asserted source
Mohammad Mahdi Khatami

Electronic transport properties of hydrogenated and fluorinated graphene: a computational study

Journal of Physics: Condensed Matter
2020-09-30 | Journal article
DOI: 10.1088/1361-648X/abb2f6
Contributors: Mohammad Mahdi Khatami; Gautam Gaddemane; Maarten L Van de Put; Mohammad Kazem Moravvej-Farshi; William G Vandenberghe
Source: check_circle
Crossref

Electronic Transport Properties of Silicane Determined from First Principles

Materials
2019-09-11 | Journal article
DOI: 10.3390/ma12182935
Contributors: Mohammad Khatami; Gautam Gaddemane; Maarten Van de Put; Massimo Fischetti; Mohammad Moravvej-Farshi; Mahdi Pourfath; William Vandenberghe
Source: check_circle
Crossref
grade
Preferred source (of 2)‎

First-principles Study of the Electron and Hole Mobility in Silicane

2019 Device Research Conference (DRC)
2019-06 | Conference paper
ISSN: 2640-6853
Source: Self-asserted source
Mohammad Mahdi Khatami

“Hot electrons in Si lose energy mostly to optical phonons”: Truth or myth?

Applied Physics Letters
2019-06-03 | Journal article
DOI: 10.1063/1.5099914
Contributors: M. V. Fischetti; P. D. Yoder; M. M. Khatami; G. Gaddemane; M. L. Van de Put
Source: check_circle
Crossref
grade
Preferred source (of 2)‎

A symmetric CMOS inverter using biaxially strained Si nano PMOSFET

2015 23rd Iranian Conference on Electrical Engineering (ICEE)
2015 | Conference paper
DOI: 10.1109/IranianCEE.2015.7146413
Part of ISSN: 2164-7054
Source: Self-asserted source
Mohammad Mahdi Khatami

Impacts of virtual substrate doping on high frequency characteristics of biaxially strained Si PMOSFET

Superlattices and Microstructures
2015 | Journal article
DOI: 10.1016/j.spmi.2015.05.012
EID:

2-s2.0-84930614079
Contributors: Khatami, M.M.; Shalchian, M.; Kolahdouz, M.
Source: Self-asserted source
Mohammad Mahdi Khatami via Scopus - Elsevier

Reducing parasitic capacitance of strained Si nano p-MOSFET by control of virtual substrate doping

5th International Congress on Nanoscience & Nanotechnology (ICNN2014)
2014 | Conference paper
ARXIV: arXiv:1508.04251
Source: Self-asserted source
Mohammad Mahdi Khatami

Peer review (1 review for 1 publication/grant)

Review activity for Journal of computational electronics. (1)
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