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Biography

Professor Jun Zhu received her bachelor's degree from the University of Science and Technology of China. She came to the United States to pursue a PhD in physics and received her degree from Columbia University in 2003. She was a postdoc fellow in Cornell University from 2003-2005 before joining Penn State University in 2006. She is currently a Professor of Physics at Penn State and an APS fellow. Her research interest focuses on the understanding of new physics and device functionalities arising from reduced dimensionality, many-body interactions and the control of new electronic degrees of freedom in nanoscale materials and devices. Her recent research projects explore the electronic properties of van der Waals materials and interfaces, with a particular emphasis on valleytronic, topological, and quantum Hall phenomena. Her lab homepage: https://sites.google.com/view/junzhulab/home.

Activities

Employment (1)

Penn State: University Park, PA, US

Professor of Physics (Physics)
Employment
Source: Self-asserted source
Jun Zhu

Works (49)

High-temperature quantum valley Hall effect with quantized resistance and a topological switch

Science
2024-08-09 | Journal article
Contributors: Ke Huang; Hailong Fu; Kenji Watanabe; Takashi Taniguchi; Jun Zhu
Source: check_circle
Crossref

Charge Oscillations in Bilayer Graphene Quantum Confinement Devices

Nano Letters
2023-11-08 | Journal article
Contributors: Hailong Fu; Ke Huang; Kenji Watanabe; Takashi Taniguchi; Jun Zhu
Source: check_circle
Crossref

Phase diagram of the ν=2 quantum Hall state in bilayer graphene

Physical Review B
2023-07-26 | Journal article
Contributors: Udit Khanna; Ke Huang; Ganpathy Murthy; H. A. Fertig; Kenji Watanabe; Takashi Taniguchi; Jun Zhu; Efrat Shimshoni
Source: check_circle
Crossref

Layered Semiconductor Cr0.32Ga0.68Te2.33 with Concurrent Broken Inversion Symmetry and Ferromagnetism: A Bulk Ferrovalley Material Candidate

Journal of the American Chemical Society
2023-03-01 | Journal article
Contributors: Yingdong Guan; Leixin Miao; Jingyang He; Jinliang Ning; Yangyang Chen; Weiwei Xie; Jianwei Sun; Venkatraman Gopalan; Jun Zhu; Xiaoping Wang et al.
Source: check_circle
Crossref

Aharonov–Bohm Oscillations in Bilayer Graphene Quantum Hall Edge State Fabry–Pérot Interferometers

Nano Letters
2023-01-25 | Journal article
Part of ISSN: 1530-6984
Part of ISSN: 1530-6992
Contributors: Hailong Fu; Ke Huang; Kenji Watanabe; Takashi Taniguchi; Morteza Kayyalha; Jun Zhu
Source: Self-asserted source
Jun Zhu

Valley Isospin Controlled Fractional Quantum Hall States in Bilayer Graphene

Physical Review X
2022-07-28 | Journal article
Contributors: Ke Huang; Hailong Fu; Danielle Reifsnyder Hickey; Nasim Alem; Xi Lin; Kenji Watanabe; Takashi Taniguchi; Jun Zhu
Source: check_circle
Crossref

Gapless Spin Wave Transport through a Quantum Canted Antiferromagnet

Physical Review X
2021-04-13 | Journal article
Contributors: Hailong Fu; Ke Huang; Kenji Watanabe; Takashi Taniguchi; Jun Zhu
Source: check_circle
Crossref

Atomically thin half-van der Waals metals enabled by confinement heteroepitaxy

Nature Materials
2020 | Journal article
Source: Self-asserted source
Jun Zhu

Ferromagnetism in van der Waals compound MnS b 1.8 B i 0.2 T e 4

Physical Review Materials
2020 | Journal article
Source: Self-asserted source
Jun Zhu

Superconducting proximity effect in a transparent van der Waals superconductor-metal junction

Physical Review B
2020 | Journal article
Source: Self-asserted source
Jun Zhu

Landau levels of bilayer graphene in a WSe 2/bilayer graphene van der Waals heterostructure

Physical Review B
2019 | Journal article
Source: Self-asserted source
Jun Zhu

Metallic Phase and Temperature Dependence of the $ν$= 0 Quantum Hall State in Bilayer Graphene

Physical review letters
2019 | Journal article
Source: Self-asserted source
Jun Zhu

Spin relaxation in fluorinated single and bilayer graphene

Physical Review B
2019 | Journal article
Source: Self-asserted source
Jun Zhu

Effective Landau level diagram of bilayer graphene

Physical Review Letters
2018 | Journal article
Source: Self-asserted source
Jun Zhu

Gate-controlled transmission of quantum hall edge states in bilayer graphene

Physical review letters
2018 | Journal article
Source: Self-asserted source
Jun Zhu

Random anion distribution in MS x Se 2- x (M= Mo, W) crystals and nanosheets

RSC Advances
2018 | Journal article
Source: Self-asserted source
Jun Zhu

A valley valve and electron beam splitter

Science
2018-12-07 | Journal article
Contributors: Jing Li; Rui-Xing Zhang; Zhenxi Yin; Jianxiao Zhang; Kenji Watanabe; Takashi Taniguchi; Chaoxing Liu; Jun Zhu
Source: check_circle
Crossref

Distinct photoluminescence and Raman spectroscopy signatures for identifying highly crystalline WS2 monolayers produced by different growth methods

Journal of Materials Research
2016 | Journal article
Source: Self-asserted source
Jun Zhu

Effective mass in bilayer graphene at low carrier densities: The role of potential disorder and electron-electron interaction

Physical Review B
2016 | Journal article
Source: Self-asserted source
Jun Zhu

Gate-controlled topological conducting channels in bilayer graphene

Nature nanotechnology
2016 | Journal article
Source: Self-asserted source
Jun Zhu

Electrically tunable resonant scattering in fluorinated bilayer graphene

Physical Review B
2015 | Journal article
Source: Self-asserted source
Jun Zhu

Gate-modulated conductance of few-layer WSe2 field-effect transistors in the subgap regime: Schottky barrier transistor and subgap impurity states

Applied Physics Letters
2015 | Journal article
Source: Self-asserted source
Jun Zhu

Manganese doping of monolayer MoS2: the substrate is critical

Nano letters
2015 | Journal article
Source: Self-asserted source
Jun Zhu

Recent advances in two-dimensional materials beyond graphene

ACS nano
2015 | Journal article
Source: Self-asserted source
Jun Zhu

Fluorination of graphene: a spectroscopic and microscopic study

ACS nano
2014 | Journal article
Source: Self-asserted source
Jun Zhu

Oxide-on-graphene field effect bio-ready sensors

Nano Research
2014 | Journal article
Source: Self-asserted source
Jun Zhu

Transport studies of dual-gated ABC and ABA trilayer graphene: band gap opening and band structure tuning in very large perpendicular electric fields

Nano letters
2013 | Journal article
Source: Self-asserted source
Jun Zhu

Evidence for spin-flip scattering and local moments in dilute fluorinated graphene

Physical review letters
2012 | Journal article
Source: Self-asserted source
Jun Zhu

Integrating functional oxides with graphene

Solid state communications
2012 | Journal article
Source: Self-asserted source
Jun Zhu

Multiferroic tunnel junctions

Frontiers of Physics
2012 | Journal article
Source: Self-asserted source
Jun Zhu

Nitrogen-doped graphene: beyond single substitution and enhanced molecular sensing

Scientific reports
2012 | Journal article
Source: Self-asserted source
Jun Zhu

Colossal negative magnetoresistance in dilute fluorinated graphene

Physical Review B
2011 | Journal article
Source: Self-asserted source
Jun Zhu

Effective mass of electrons and holes in bilayer graphene: Electron-hole asymmetry and electron-electron interaction

Physical Review B
2011 | Journal article
Source: Self-asserted source
Jun Zhu

Deposition of high-quality HfO 2 on graphene and the effect of remote oxide phonon scattering

Physical review letters
2010 | Journal article
Source: Self-asserted source
Jun Zhu

Mechanism for current saturation and energy dissipation in graphene transistors

Physical review letters
2010 | Journal article
Source: Self-asserted source
Jun Zhu

Photoluminescence from nanocrystalline graphite monofluoride

Applied physics letters
2010 | Journal article
Source: Self-asserted source
Jun Zhu

Reversible fluorination of graphene: Evidence of a two-dimensional wide bandgap semiconductor

Physical Review B
2010 | Journal article
Source: Self-asserted source
Jun Zhu

Transport in gapped bilayer graphene: The role of potential fluctuations

Physical Review B
2010 | Journal article
Source: Self-asserted source
Jun Zhu

Unusual resistance hysteresis in n-layer graphene field effect transistors fabricated on ferroelectric Pb (Zr 0.2 Ti 0.8) O 3

Applied Physics Letters
2010 | Journal article
Source: Self-asserted source
Jun Zhu

High-mobility few-layer graphene field effect transistors fabricated on epitaxial ferroelectric gate oxides

Physical review letters
2009 | Journal article
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Jun Zhu

Quantum scattering time and its implications on scattering sources in graphene

Physical Review B
2009 | Journal article
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Jun Zhu

Advanced Topics in the Synthesis, Structure, Properties and Applications

Topics in applied physics
2008 | Journal article
Source: Self-asserted source
Jun Zhu

New solutions to a new problem

Nature nanotechnology
2008 | Journal article
Source: Self-asserted source
Jun Zhu

Single-electron force readout of nanoparticle electrometers attached to carbon nanotubes

Nano letters
2008 | Journal article
Source: Self-asserted source
Jun Zhu

Spin susceptibility and effective mass of a 2D electron system in GaAs heterostructures towards the weak interacting regime

Physica E: Low-dimensional Systems and Nanostructures
2006 | Journal article
Source: Self-asserted source
Jun Zhu

Spin susceptibility of a two-dimensional electron system in GaAs towards the weak interaction region

Physical Review B
2006 | Journal article
Source: Self-asserted source
Jun Zhu

Frequency shift imaging of quantum dots with single-electron resolution

Applied Physics Letters
2005 | Journal article
Source: Self-asserted source
Jun Zhu

Measurements of the Density-Dependent Many-Body Electron Mass in Two Dimensional G a A s/A l G a A s Heterostructures

Physical review letters
2005 | Journal article
Source: Self-asserted source
Jun Zhu

Spin susceptibility of a variable-density two-dimensional electron system

Physica E: Low-dimensional Systems and Nanostructures
2004 | Journal article
Source: Self-asserted source
Jun Zhu