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Works (32)

Characteristics of 3D-Integrated GaN Power Module Under Multi Heat Source Coupling

Materials
2025-02-28 | Journal article
DOI: 10.3390/ma18051082
Contributors: Yijun Shi; Mingen Lv; Guoguang Lu; Caixing Hui; Liang He; Xinghuan Chen; Yuan Chen; Xiangjun Lu
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“M”-Shaped Threshold Voltage Shift Induced by Competitive Positive/Negative Gate Switching Stress in Schottky-Type p-GaN Gate HEMTs

IEEE Electron Device Letters
2024 | Journal article
DOI: 10.1109/LED.2024.3480253
Contributors: Yunfeng Hu; Liang He; Meng Dong; Xinghuan Chen; Yijun Shi; Zhiyuan He; Zongqi Cai; Yiqiang Ni; Hongyue Wang; Zhizhe Wang et al.
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Effect of hydrogen poisoning on p-gate AlGaN/GaN HEMTs

Journal of Physics D: Applied Physics
2024-10-11 | Journal article
DOI: 10.1088/1361-6463/ad5dca
Contributors: Zhiyuan He; Liang He; Kun Jiang; Xiaoyue Duan; Yijun Shi; Xinghuan Chen; Yuan Chen; Hualong Wu; Guoguang Lu; Yiqiang Ni
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Physical insight into the abnormal VTH instability of Schottky p-GaN HEMTs under high-frequency operation

Applied Physics Letters
2024-04-22 | Journal article
DOI: 10.1063/5.0196130
Contributors: Xinghuan Chen; Zhiyuan He; Yijun Shi; Zeheng Wang; Fangzhou Wang; Ruize Sun; Yiqiang Chen; Yuan Chen; Liang He; Guoguang Lu et al.
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A GaN Lateral Bidirectional ESD Clamp Based on the Floating-Gate MBS and a Regulating Capacitor

IEEE Transactions on Electron Devices
2024-01 | Journal article
DOI: 10.1109/TED.2023.3338187
Contributors: Chao Liu; Yijun Shi; Zhiyuan He; Zongqi Cai; Xu Huang; Yiqiang Chen; Wanjun Chen; Ruize Sun; Guoguang Lu; Bo Zhang
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Gate Bias Effects on Hydrogen-Terminated Polycrystalline Diamond FETs

IEEE Transactions on Electron Devices
2024-01 | Journal article
DOI: 10.1109/TED.2023.3336633
Contributors: Hongyue Wang; Yuebo Liu; Lei Ge; Mingsheng Xu; Yijun Shi; Zongqi Cai; Kai Huang; ZhiYuan He; Yan Peng; Xiwei Wang et al.
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A Comparative Study on G-to-S ESD Robustness of the Ohmic-Gate and Schottky-Gate p-GaN HEMTs

IEEE Transactions on Electron Devices
2023 | Journal article
DOI: 10.1109/TED.2023.3257282
Contributors: Yijun Shi; Zhiyuan He; Yun Huang; Zongqi Cai; Yiqiang Chen; Liye Cheng; Wanjun Chen; Ruize Sun; Chao Liu; Guoguang Lu et al.
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Degradation Evaluation and Defects Analysis for 1.2-kV Planar-Gate SiC MOSFETs Under Repetitive Surge Current Stress

IEEE Transactions on Electron Devices
2023 | Journal article
DOI: 10.1109/TED.2023.3323912
Contributors: Dezhi Ma; Zhiyuan He; Yuan Chen; Yijun Shi; Jian Wang; Chao Yang; Mowen Zhang; Yutong Shen; Liang He; Guoguang Lu et al.
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RF Overdrive Burnout Behavior and Mechanism Analysis of GaN HEMTs Based on High Speed Camera

IEEE Journal of the Electron Devices Society
2023 | Journal article
DOI: 10.1109/JEDS.2023.3239100
Contributors: Chang Liu; Hong Xia Liu; Yi Qiang Chen; Yi Jun Shi; Yu Han Xie; Si Chen; Ping Lai; Zhi Yuan He; Yun Huang
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The Chip-Level and Package-Level Degradation of Cascode GaN Device Under Repetitive Power Cycling Stress

IEEE Journal of the Electron Devices Society
2023 | Journal article
DOI: 10.1109/JEDS.2023.3297329
Contributors: Yijun Shi; Shan Wu; Zhiyuan He; Zongqi Cai; Liye Cheng; Yunliang Rao; Qingzhong Xiao; Yiqiang Chen; Guoguang Lu
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The ESD Behavior of D-Mode GaN MIS-HEMT

IEEE Transactions on Electron Devices
2023 | Journal article
DOI: 10.1109/TED.2023.3323438
Contributors: Chao Liu; Yijun Shi; Zhiyuan He; Yajie Xin; Wanjun Chen; Ruize Sun; Bo Zhang
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A Novel Insulated Gate Trigger Thyristor Integrated With Gate Transient Voltage Suppressor for Ultrahigh di/dt Pulse Switching

IEEE Electron Device Letters
2023-10 | Journal article
DOI: 10.1109/LED.2023.3305337
Contributors: Chao Liu; Pengwei Zhou; Wanjun Chen; Pengcheng Xing; Yijun Shi; Ruize Sun; Mincong Wei; Yajie Xin; Zhaoji Li; Bo Zhang
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The Influence of Special Environments on SiC MOSFETs

Materials
2023-09-13 | Journal article
DOI: 10.3390/ma16186193
Contributors: Zhigang Li; Jie Jiang; Zhiyuan He; Shengdong Hu; Yijun Shi; Zhenbo Zhao; Yigang He; Yiqiang Chen; Guoguang Lu
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Time-Dependent Degradation Mechanism of 1.2 kV SiC MOSFET Under Long-Term High-Temperature Gate Bias Stress

IEEE Transactions on Electron Devices
2023-03 | Journal article
DOI: 10.1109/TED.2022.3213774
Contributors: Yutong Shen; Zhiyuan He; Yijun Shi; Hao Niu; Yuan Chen; Chang Liu; Yiqiang Chen; Zongqi Cai; Guoguang Lu; Xianying Dai
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Study on Transient Turn-On Characteristics of Pulse Power Thyristor-Type Devices Under Ultrahigh di/dt Condition

IEEE Transactions on Electron Devices
2023-02 | Journal article
DOI: 10.1109/TED.2022.3232320
Contributors: Chao Liu; Pengcheng Xing; Shuyi Zhang; Wanjun Chen; Ruize Sun; Xiaorui Xu; Yun Xia; Yajie Xin; Yijun Shi; Zhaoji Li et al.
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Effect of Electro-Thermo-Mechanical Coupling Stress on Top-Cooled E-Mode AlGaN/GaN HEMT

Materials
2023-02-10 | Journal article
DOI: 10.3390/ma16041484
Contributors: Jie Jiang; Qiuqi Chen; Shengdong Hu; Yijun Shi; Zhiyuan He; Yun Huang; Caixin Hui; Yiqiang Chen; Hao Wu; Guoguang Lu
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Experimental Investigation and Model Analysis on a GaN Electrostatic Discharge Clamp

IEEE Journal of the Electron Devices Society
2022 | Journal article
DOI: 10.1109/JEDS.2022.3218020
Contributors: Yijun Shi; Zhiyuan He; Yun Huang; Zongqi Cai; Yiqiang Chen; Chang Liu; Chao Liu; Wanjun Chen; Ruize Sun; Guoguang Lu
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The Electrical and Thermal Characteristics of Stacked GaN MISHEMT

Micromachines
2022-11-28 | Journal article
DOI: 10.3390/mi13122101
Contributors: Caixin Hui; Qiuqi Chen; Yijun Shi; Zhiyuan He; Yun Huang; Xiangjun Lu; Hongyue Wang; Jie Jiang; Guoguang Lu
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A Novel Gate-to-Source ESD Protection Clamp for GaN HEMT

IEEE Transactions on Electron Devices
2022-07 | Journal article
DOI: 10.1109/TED.2022.3172057
Contributors: Yijun Shi; Yiqiang Chen; Yun Huang; Zhiyuan He; Wanjun Chen; Ruize Sun; Bin Yao; Hongyue Wang; Qingzhong Xiao; Guoguang Lu et al.
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An AlGaN/GaN Lateral Bidirectional Current-Regulating Diode with Two Symmetrical Hybrid Ohmic-Schottky Structures

Micromachines
2022-07-21 | Journal article
DOI: 10.3390/mi13071157
Contributors: Yijun Shi; Zongqi Cai; Yun Huang; Zhiyuan He; Yiqiang Chen; Liye Cheng; Guoguang Lu
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Investigation on the Thermal Characteristics of Enhancement-Mode p-GaN HEMT Device on Si Substrate Using Thermoreflectance Microscopy

Micromachines
2022-03 | Journal article | Author
DOI: 10.3390/mi13030466
Contributors: Hongyue Wang; Chao Yuan; Yajie Xin; Yijun Shi; Yaozong Zhong; Yun Huang; Guoguang Lu
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Multidisciplinary Digital Publishing Institute
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A Novel AlGaN/GaN Transient Voltage Suppression Diode with Bidirectional Clamp Capability

Micromachines
2022-02-14 | Journal article
DOI: 10.3390/mi13020299
Contributors: Zhiyuan He; Yijun Shi; Yun Huang; Yiqiang Chen; Hongyue Wang; Lei Wang; Guoguang Lu; Yajie Xin
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A Novel Bidirectional AlGaN/GaN ESD Protection Diode

Micromachines
2022-01-15 | Journal article
DOI: 10.3390/mi13010135
Contributors: Bin Yao; Yijun Shi; Hongyue Wang; Xinbin Xu; Yiqiang Chen; Zhiyuan He; Qingzhong Xiao; Lei Wang; Guoguang Lu; Hao Li et al.
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Influence of the Acceptor-Type Trap on the Threshold Voltage of the Short-Channel GaN MOS-HEMT

IEEE Journal of the Electron Devices Society
2021 | Journal article
DOI: 10.1109/JEDS.2021.3085886
Contributors: Yijun Shi; Wanjun Chen; Zhiwei Fu; Si Chen; Bo Zhang
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Effects of Etching Temperature on the Characteristics of Recessed-Anode AlGaN/GaN Schottky Barrier Diodes

Journal of Electronic Materials
2021-11-25 | Journal article
DOI: 10.1007/s11664-021-09168-0
Contributors: Yijun Shi; Xiao Luo; Hongyue Wang; Wanjun Chen; Xiaofeng Yang
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Towards Understanding the Interaction Between Hydrogen Poisoning and Bias Stress in AlGaN/GaN MIS-HEMTs With SiNx Gate Dielectric

IEEE Electron Device Letters
2021-02 | Journal article
DOI: 10.1109/LED.2021.3049245
Contributors: Rui Gao; Chang Liu; Zhiyuan He; Yiqiang Chen; Yijun Shi; Xiaoling Lin; Xiaowen Zhang; Zhizhe Wang; Yunfei En; Guoguang Lu et al.
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A Fast Extraction Method of Energy Distribution of Border Traps in AlGaN/GaN MIS-HEMT

IEEE Journal of the Electron Devices Society
2020 | Journal article
DOI: 10.1109/JEDS.2020.3016022
Contributors: Rui Gao; Yijun Shi; Zhiyuan He; Yiqiang Chen; Yunfei En; Yun Huang; Zhigang Ji; Jianfu Zhang; Weidong Zhang; Xuefeng Zheng et al.
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Charge storage impact on input capacitance in p-GaN gate AlGaN/GaN power high-electron-mobility transistors

Journal of Physics D: Applied Physics
2020-07-22 | Journal article
DOI: 10.1088/1361-6463/ab86e7
Contributors: Fangzhou Wang; Wanjun Chen; Xuan Li; Ruize Sun; Xiaorui Xu; Yajie Xin; Zeheng Wang; Yijun Shi; Yun Xia; Chao Liu et al.
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Modeling the Influence of the Acceptor-Type Trap on the 2DEG Density for GaN MIS-HEMTs

IEEE Transactions on Electron Devices
2020-06 | Journal article
DOI: 10.1109/TED.2020.2986241
Contributors: Yijun Shi; Wanjun Chen; Ruize Sun; Chao Liu; Yajie Xin; Yun Xia; Fangzhou Wang; Xiaorui Xu; Xiaochuan Deng; Tangsheng Chen et al.
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Non-Simultaneous Triggering Induced Failure of CS-MCT Under Repetitive High-Current Pulse Condition

IEEE Transactions on Device and Materials Reliability
2020-03 | Journal article
DOI: 10.1109/TDMR.2020.2965980
Contributors: Wanjun Chen; Huiling Zuo; Qijun Zhou; Wuhao Gao; Yun Xia; Chao Liu; Hong Tao; Yawei Liu; Yijun Shi; Yajie Xin et al.
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An Extraction Method for the Interface Acceptor Distribution of GaN MOS-HEMT

IEEE Transactions on Electron Devices
2019-10 | Journal article
DOI: 10.1109/TED.2019.2936509
Contributors: Yijun Shi; Wanjun Chen; Ruize Sun; Chao Liu; Yun Xia; Yajie Xin; Xiaorui Xu; Fangzhou Wang; Xiaochuan Deng; Tangsheng Chen et al.
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A GaN RB-MISHEMT with a Schottky–MIS hybrid drain and An Al0−0.50Ga1−0.50N/GaN heterojunction

Journal of Computational Electronics
2019-09 | Journal article
DOI: 10.1007/s10825-019-01363-x
Contributors: Yijun Shi; Chen Wanjun; Tangsheng Chen
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