Personal information

Other IDs

Loop profile: 234341
Scopus Author ID: 56658980500

Keywords

MOCVD, Epitaxy, Interconnect

Countries

South Korea

Activities

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Employment (3)

Gachon University: Seongnam, KR

2024 to present | Assistant Professor (Department of Electronic Engineering)
Employment
Source: Self-asserted source
Gangtae Jin

Cornell University: Ithaca, NY, US

2022-09 to 2024-01-19 | Postdoc
Employment
Source: Self-asserted source
Gangtae Jin

Yale University: New Haven, Connecticut, US

2021-08 to 2022-09 | Postdoc
Employment
Source: Self-asserted source
Gangtae Jin

Education and qualifications (2)

Pohang University of Science and Technology: Pohang, Gyeongsangbuk-do, KR

2015-03 to 2021-02 | Graduate student (Department of Materials Science & Engineering)
Education
Source: Self-asserted source
Gangtae Jin

Yonsei University: Seoul, KR

2011-03-01 to 2015-02 | B.S. (Materials Science and Engineering)
Education
Source: Self-asserted source
Gangtae Jin

Works (16)

Dimensional Scaling of Topological Metal Nanowires for Interconnect

EMC 2023
2023-06-29 | Conference paper
DOI: 10.48448/BPD1-WD06
Contributors: Gangtae Jin
Source: Self-asserted source
Gangtae Jin

Nanomolding of metastable Mo4P3

Matter
2023-04 | Journal article
DOI: 10.1016/j.matt.2023.03.023
Part of ISSN: 2590-2385
Contributors: Mehrdad T Kiani; Quynh P. Sam; Gangtae Jin; Betül Pamuk; Hyeuk Jin Han; James L. Hart; J.R. Stauff; Judy Cha
Source: Self-asserted source
Gangtae Jin

Substrate Effects on Growth Dynamics of WTe <sub>2</sub> Thin films

Advanced Materials Interfaces
2023-03-14 | Journal article
DOI: 10.1002/admi.202202397
Part of ISSN: 2196-7350
Part of ISSN: 2196-7350
Contributors: David J. Hynek; Elifnaz Onder; James L. Hart; Gangtae Jin; Mengjing Wang; Raivat M. Singhania; Benjamin Davis; Nicholas C. Strandwitz; Judy Cha
Source: Self-asserted source
Gangtae Jin

Topological Metal MoP Nanowire for Interconnect

Advanced Materials
2023-02-17 | Journal article | Author
DOI: 10.1002/adma.202208965
Part of ISSN: 0935-9648
Part of ISSN: 1521-4095
Contributors: Hyeuk Jin Han; Sushant Kumar; Gangtae Jin; Xiaoyang Ji; James L. Hart; David J. Hynek; Quynh P. Sam; Vicky Hasse; Claudia Felser; David G. Cahill et al.
Source: Self-asserted source
Gangtae Jin

Photoluminescence Path Bifurcations by Spin Flip in Two-Dimensional CrPS<sub>4</sub>

ACS Nano
2022-09-21 | Journal article
DOI: 10.1021/acsnano.2c05600
Part of ISSN: 1936-0851
Part of ISSN: 1936-086X
Contributors: Gangtae Jin
Source: Self-asserted source
Gangtae Jin

Vapor phase synthesis of topological semimetal MoP<sub>2</sub> nanowires and their resistivity

Applied Physics Letters
2022-09-15 | Journal article
DOI: 10.1063/5.0106357
Part of ISSN: 0003-6951
Part of ISSN: 1077-3118
Contributors: Gangtae Jin
Source: Self-asserted source
Gangtae Jin

Heteroepitaxial van der Waals semiconductor superlattices

Nature Nanotechnology
2021-07-15 | Journal article
DOI: 10.1038/s41565-021-00942-z
Part of ISSN: 1748-3387
Part of ISSN: 1748-3395
Source: Self-asserted source
Gangtae Jin

Sub-Band-Gap Photoresponse Caused by Hot Electron Injections in Au Nanorod Decorated van der Waals Semiconductor Monolayers

Journal of the Korean Physical Society
2020-07 | Journal article
DOI: 10.3938/jkps.77.127
Part of ISSN: 0374-4884
Part of ISSN: 1976-8524
Source: Self-asserted source
Gangtae Jin

Programmed Band Gap Modulation within van der Waals Semiconductor Monolayers by Metalorganic Vapor-Phase Epitaxy

Chemistry of Materials
2020-06-22 | Journal article
DOI: 10.1021/acs.chemmater.0c00949
ISSN: 0897-4756
Part of ISSN: 1520-5002
Source: Self-asserted source
Gangtae Jin

Atomically thin three-dimensional membranes of van der Waals semiconductors by wafer-scale growth

Science Advances
2019 | Journal article
DOI: 10.1126/sciadv.aaw3180
EID:

2-s2.0-85069929709
Contributors: Jin, G.; Lee, C.-S.; Liao, X.; Kim, J.; Wang, Z.; Okello, O.F.N.; Park, B.; Park, J.; Han, C.; Heo, H. et al.
Source: Self-asserted source
Gangtae Jin via Scopus - Elsevier

Crossover between Photochemical and Photothermal Oxidations of Atomically Thin Magnetic Semiconductor CrPS<inf>4</inf>

Nano Letters
2019 | Journal article
DOI: 10.1021/acs.nanolett.9b01417
EID:

2-s2.0-85067347913
Contributors: Kim, S.; Lee, J.; Jin, G.; Jo, M.-H.; Lee, C.; Ryu, S.
Source: Self-asserted source
Gangtae Jin via Scopus - Elsevier

Non-local detection and electric modulation of valley- coupled spin photocurrents in WSe<inf>2</inf>-Bi<inf>2</inf>Se<inf>3</inf> heterostructure device

Optics InfoBase Conference Papers
2018 | Conference paper
DOI: 10.1364/CLEO_SI.2018.SW3I.3
EID:

2-s2.0-85048948876
Contributors: Noh, M.; Cha, S.; Kim, J.-H.; Son, J.; Bae, H.; Lee, D.; Kim, H.; Lee, J.; Shin, H.; Sim, S. et al.
Source: Self-asserted source
Gangtae Jin via Scopus - Elsevier
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Directly Assembled 3D Molybdenum Disulfide on Silicon Wafer for Efficient Photoelectrochemical Water Reduction

Advanced Sustainable Systems
2018-03 | Journal article
DOI: 10.1002/adsu.201700142
Part of ISSN: 2366-7486
Source: Self-asserted source
Gangtae Jin

Vapor phase synthesis of TaS2 nanocrystals with iodine as transport agent

Japanese Journal of Applied Physics
2017-04-01 | Journal article
DOI: 10.7567/jjap.56.045501
ISSN: 0021-4922
Part of ISSN: 1347-4065
Source: Self-asserted source
Gangtae Jin

Interlayer orientation-dependent light absorption and emission in monolayer semiconductor stacks

Nature Communications
2015 | Journal article
DOI: 10.1038/ncomms8372
EID:

2-s2.0-84934993985
Contributors: Heo, H.; Sung, J.H.; Cha, S.; Jang, B.-G.; Kim, J.-Y.; Jin, G.; Lee, D.; Ahn, J.-H.; Lee, M.-J.; Shim, J.H. et al.
Source: Self-asserted source
Gangtae Jin via Scopus - Elsevier

Rotation-Misfit-Free Heteroepitaxial Stacking and Stitching Growth of Hexagonal Transition-Metal Dichalcogenide Monolayers by Nucleation Kinetics Controls

Advanced Materials
2015 | Journal article
DOI: 10.1002/adma.201500846
EID:

2-s2.0-85027928601
Contributors: Heo, H.; Sung, J.H.; Jin, G.; Ahn, J.-H.; Kim, K.; Lee, M.-J.; Cha, S.; Choi, H.; Jo, M.-H.
Source: Self-asserted source
Gangtae Jin via Scopus - Elsevier

Peer review (1 review for 1 publication/grant)

Review activity for Electronic Materials Letters. (1)
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