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Education and qualifications (2)

Nanjing University: Nanjing, Jiangsu, CN

2019-09-01 to present | Ph.D (Electronic Science and Engineering)
Education
Source: Self-asserted source
Zhengpeng Wang

Xi'an Jiaotong University: Xi'an, Shaanxi, CN

2015-08-23 to 2019-06-13 | Bachelor (Electronic Science and Engineering)
Education
Source: Self-asserted source
Zhengpeng Wang

Works (16)

Fast switching Ga2O3 Schottky barrier power diode with beveled-mesa and BaTiO3 field plate edge termination

Applied Physics Letters
2024-10-21 | Journal article
DOI: 10.1063/5.0231974
Contributors: N. Sun; H. H. Gong; T. C. Hu; F. Zhou; Z. P. Wang; X. X. Yu; F.-F Ren; S. L. Gu; H. Lu; R. Zhang et al.
Source: check_circle
Crossref

Performance limiting inhomogeneities of defect states in ampere-class Ga2O3 power diodes

Applied Physics Reviews
2024-06-01 | Journal article
DOI: 10.1063/5.0191343
Contributors: Z. P. Wang; N. Sun; X. X. Yu; H. H. Gong; X. L. Ji; F.-F. Ren; S. L. Gu; Y. D. Zheng; R. Zhang; A. Yu. Kuznetsov et al.
Source: check_circle
Crossref

Ga2O3 Bipolar Heterojunction-Based Optoelectronic Synapse Array with Visual Attention

The Journal of Physical Chemistry Letters
2024-01-18 | Journal article
DOI: 10.1021/acs.jpclett.3c02898
Contributors: Ke Xu; Baocheng Peng; Huiwu Mao; Zhengpeng Wang; Hehe Gong; Chuanyu Fu; Fang-Fang Ren; Yi Yang; Changjin Wan; Qing Wan et al.
Source: check_circle
Crossref

High-V TH E-Mode GaN HEMTs With Robust Gate-Bias-Dependent V TH Stability Enabled by Mg-Doped p-GaN Engineering

IEEE Transactions on Electron Devices
2023-11 | Journal article
DOI: 10.1109/TED.2023.3315252
Contributors: Yulei Jin; Feng Zhou; Weizong Xu; Zhengpeng Wang; Tianyang Zhou; Dong Zhou; Fangfang Ren; Yuanyang Xia; Leke Wu; Yiheng Li et al.
Source: check_circle
Crossref

A self-aligned Ga2O3 heterojunction barrier Schottky power diode

Applied Physics Letters
2023-07-03 | Journal article
DOI: 10.1063/5.0147251
Contributors: T. C. Hu; Z. P. Wang; N. Sun; H. H. Gong; X. X. Yu; F. F. Ren; Y. Yang; S. L. Gu; Y. D. Zheng; R. Zhang et al.
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Crossref

Traps inhomogeneity induced conversion of Shockley–Read–Hall recombination in NiO/β-Ga2O3 p+–n heterojunction diodes

Applied Physics Letters
2023-04-10 | Journal article
DOI: 10.1063/5.0138426
Contributors: Z. P. Wang; H. H. Gong; X. X. Yu; T. C. Hu; X. L. Ji; F.-F. Ren; S. L. Gu; Y. D. Zheng; R. Zhang; J. D. Ye
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Crossref

Identification and Suppression of Majority Surface States in the Dry-Etched β-Ga2O3

The Journal of Physical Chemistry Letters
2022-08-04 | Journal article
DOI: 10.1021/acs.jpclett.2c02167
Contributors: Zhengpeng Wang; Xinxin Yu; Hehe Gong; Tiancheng Hu; Yijun Zhang; Xiaoli Ji; Fangfang Ren; Shulin Gu; Youdou Zheng; Rong Zhang et al.
Source: check_circle
Crossref

M-Plane α-Ga₂O₃ Solar-Blind Detector With Record-High Responsivity-Bandwidth Product and High-Temperature Operation Capability

IEEE Electron Device Letters
2022-04 | Journal article
DOI: 10.1109/LED.2022.3156177
Contributors: Xinyu Sun; Zhengpeng Wang; Hehe Gong; Xuanhu Chen; Yijun Zhang; Zhiyuan Wang; Xinxin Yu; Fangfang Ren; Hai Lu; Shulin Gu et al.
Source: check_circle
Crossref

Majority and Minority Carrier Traps in NiO/β-Ga2O3 p+-n Heterojunction Diode

IEEE Transactions on Electron Devices
2022-03 | Journal article
DOI: 10.1109/TED.2022.3143491
Contributors: Zhengpeng Wang; Hehe Gong; Chenxu Meng; Xinxin Yu; Xinyu Sun; Chongde Zhang; Xiaoli Ji; Fangfang Ren; Shulin Gu; Youdou Zheng et al.
Source: check_circle
Crossref

Dislocation dynamics in α-Ga2O3 micropillars from selective-area epitaxy to epitaxial lateral overgrowth

Applied Physics Letters
2022-03-21 | Journal article
DOI: 10.1063/5.0085367
Contributors: Y. J. Zhang; Z. P. Wang; Y. Kuang; H. H. Gong; J. G. Hao; X. Y. Sun; F.-F. Ren; Y. Yang; S. L. Gu; Y. D. Zheng et al.
Source: check_circle
Crossref

Field-Plated NiO/Ga2O3 p-n Heterojunction Power Diodes With High-Temperature Thermal Stability and Near Unity Ideality Factors

IEEE Journal of the Electron Devices Society
2021 | Journal article
DOI: 10.1109/jeds.2021.3130305
Part of ISSN: 2168-6734
Source: Self-asserted source
Zhengpeng Wang

Over 1.8 GW/cm2 beveled-mesa NiO/β-Ga2O3 heterojunction diode with 800 V/10 A nanosecond switching capability

Applied Physics Letters
2021-12-27 | Journal article
DOI: 10.1063/5.0071280
Contributors: F. Zhou; H. H. Gong; Z. P. Wang; W. Z. Xu; X. X. Yu; Y. Yang; F.-F. Ren; S. L. Gu; R. Zhang; Y. D. Zheng et al.
Source: check_circle
Crossref

Toward emerging gallium oxide semiconductors: A roadmap

Fundamental Research
2021-11 | Journal article
DOI: 10.1016/j.fmre.2021.11.002
Part of ISSN: 2667-3258
Source: Self-asserted source
Zhengpeng Wang

A self-powered solar-blind photodetector based on polyaniline/α-Ga2O3 p–n heterojunction

Applied Physics Letters
2021-10-04 | Journal article
DOI: 10.1063/5.0059061
Contributors: X. Y. Sun; X. H. Chen; J. G. Hao; Z. P. Wang; Y. Xu; H. H. Gong; Y. J. Zhang; X. X. Yu; C. D. Zhang; F.-F. Ren et al.
Source: check_circle
Crossref

Deep-level defects in gallium oxide

Journal of Physics D: Applied Physics
2021-01-28 | Journal article
DOI: 10.1088/1361-6463/abbeb1
Part of ISSN: 0022-3727
Part of ISSN: 1361-6463
Source: Self-asserted source
Zhengpeng Wang

Property manipulation through pulsed laser annealing in high dose Mg-implanted GaN

Journal of Applied Physics
2020-12-21 | Journal article
DOI: 10.1063/5.0028760
Contributors: Ya-Ting Shi; Fang-Fang Ren; Jinggang Hao; Zhengpeng Wang; Jiandong Ye; Wei-Zong Xu; Dong Zhou; Rong Zhang; Youdou Zheng; Hai Lu
Source: check_circle
Crossref
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