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Employment (2)

GlobalFoundries (Germany): Dresden, DE

2021 to present
Employment
Source: Self-asserted source
Halid Mulaosmanovic

NaMLab gGmbH: Dresden, Saxony, DE

2016 to 2021 | Research assistant
Employment
Source: Self-asserted source
Halid Mulaosmanovic

Education and qualifications (1)

Politecnico di Milano: Milano, Lombardia, IT

2016-02 | Ph.D. in Information Technology
Education
Source: Self-asserted source
Halid Mulaosmanovic

Works (50 of 92)

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Page 1 of 2

Charge trapping challenges of CMOS embedded complementary FeFETs

2024 IEEE International Memory Workshop, IMW 2024 - Proceedings
2024 | Conference paper
DOI: 10.1109/IMW59701.2024.10536957
EID:

2-s2.0-85195414872

Part of ISBN: 9798350306521
Contributors: Beyer, S.; Kleimaier, D.; Dunkel, S.; Mulaosmanovic, H.; Soss, S.; Muller, J.; Jiang, Z.; Ni, K.; Mikolajick, T.; Zhou, H.
Source: Self-asserted source
Halid Mulaosmanovic via Scopus - Elsevier

Design Space for the Scaled Ferroelectric MirrorBit Technology for High-Density NVM Storage

IEEE Electron Devices Technology and Manufacturing Conference: Strengthening the Globalization in Semiconductors, EDTM 2024
2024 | Conference paper
DOI: 10.1109/EDTM58488.2024.10512055
EID:

2-s2.0-85193286408

Part of ISBN: 9798350371529
Contributors: Meihar, P.; Rowtu, S.; Mulaosmanovic, H.; Dunkel, S.; Beyer, S.; Ganguly, U.
Source: Self-asserted source
Halid Mulaosmanovic via Scopus - Elsevier

Evaluating the Robustness of Complementary Channel Ferroelectric FETs Against Total Ionizing Dose Toward Radiation-Tolerant Embedded Nonvolatile Memory

IEEE Electron Device Letters
2024 | Journal article
DOI: 10.1109/LED.2023.3332071
EID:

2-s2.0-85177037989

Part of ISSN: 15580563 07413106
Contributors: Jiang, Z.; Guo, Z.; Luo, X.; Sayed, M.; Faris, Z.; Mulaosmanovic, H.; Duenkel, S.; Soss, S.; Beyer, S.; Gong, X. et al.
Source: Self-asserted source
Halid Mulaosmanovic via Scopus - Elsevier

Exploring Charge Trapping Dynamics in Si:HfO-FeFETs by Temperature-Dependent Electrical Characterization

IEEE Electron Devices Technology and Manufacturing Conference: Strengthening the Globalization in Semiconductors, EDTM 2024
2024 | Conference paper
DOI: 10.1109/EDTM58488.2024.10512141
EID:

2-s2.0-85193228717

Part of ISBN: 9798350371529
Contributors: Dahan, M.M.; Ber, E.; Levit, O.; Mulaosmanovic, H.; Dunkel, S.; Muller, J.; Beyer, S.; Yalon, E.
Source: Self-asserted source
Halid Mulaosmanovic via Scopus - Elsevier

FeFET-Based MirrorBit Cell for High-Density NVM Storage

IEEE Transactions on Electron Devices
2024 | Journal article
DOI: 10.1109/TED.2024.3361843
EID:

2-s2.0-85187305270

Part of ISSN: 15579646 00189383
Contributors: Meihar, P.; Srinu, R.; Saraswat, V.; Lashkare, S.; Mulaosmanovic, H.; Singh, A.K.; Dunkel, S.; Beyer, S.; Ganguly, U.
Source: Self-asserted source
Halid Mulaosmanovic via Scopus - Elsevier

Ferroelectric FET-based context-switching FPGA enabling dynamic reconfiguration for adaptive deep learning machines

Science Advances
2024 | Journal article
DOI: 10.1126/sciadv.adk1525
EID:

2-s2.0-85182808413

Part of ISSN: 23752548
Contributors: Xu, Y.; Zhao, Z.; Xiao, Y.; Yu, T.; Mulaosmanovic, H.; Kleimaier, D.; Duenkel, S.; Beyer, S.; Gong, X.; Joshi, R. et al.
Source: Self-asserted source
Halid Mulaosmanovic via Scopus - Elsevier

Ferroelectric MirrorBit-Integrated Field-Programmable Memory Array for the TCAM, Storage, and In-Memory Computing Applications

IEEE Transactions on Electron Devices
2024 | Journal article
DOI: 10.1109/TED.2024.3376312
EID:

2-s2.0-85189141221

Part of ISSN: 15579646 00189383
Contributors: Meihar, P.; Srinu, R.; Lashkare, S.; Singh, A.K.; Mulaosmanovic, H.; Deshpande, V.; Dunkel, S.; Beyer, S.; Ganguly, U.
Source: Self-asserted source
Halid Mulaosmanovic via Scopus - Elsevier

Paving the Way for Pass Disturb Free Vertical NAND Storage via A Dedicated and String-Compatible Pass Gate

arXiv
2024 | Other
DOI: 10.48550/arXiv.2403.04981
EID:

2-s2.0-85188266343

Part of ISSN: 23318422
Contributors: Zhao, Z.; Woo, S.; Aabrar, K.A.; Kirtania, S.G.; Jiang, Z.; Deng, S.; Xiao, Y.; Mulaosmanovic, H.; Duenkel, S.; Kleimaier, D. et al.
Source: Self-asserted source
Halid Mulaosmanovic via Scopus - Elsevier

Reliability Assesement of Ferroelectric nvCAP for Small-Signal Capacitive Read-Out

IEEE International Reliability Physics Symposium Proceedings
2024 | Conference paper
DOI: 10.1109/IRPS48228.2024.10529440
EID:

2-s2.0-85194107364

Part of ISBN: 9798350369762
Part of ISSN: 15417026
Contributors: Phadke, O.; Mulaosmanovic, H.; Dunkel, S.; Beyer, S.; Yu, S.
Source: Self-asserted source
Halid Mulaosmanovic via Scopus - Elsevier

Evaluating the Robustness of Complementary Channel Ferroelectric FETs Against Total Ionizing Dose Towards Radiation-Tolerant Embedded Nonvolatile Memory

TechRxiv
2023 | Other
DOI: 10.36227/techrxiv.22933937
EID:

2-s2.0-85162746850
Contributors: Jiang, Z.; Guo, Z.; Luo, X.; Sayed, M.; Faris, Z.; Mulaosmanovic, H.; Duenkel, S.; Soss, S.; Beyer, S.; Gong, X. et al.
Source: Self-asserted source
Halid Mulaosmanovic via Scopus - Elsevier

FeFET-based MirrorBit cell for High-density NVM storage

arXiv
2023 | Other
DOI: 10.48550/arXiv.2304.03124
EID:

2-s2.0-85174245966

Part of ISSN: 23318422
Contributors: Meihar, P.; Srinu, R.; Saraswat, V.; Lashkare, S.; Mulaosmanovic, H.; Singh, A.K.; Dünkel, S.; Beyer, S.; Ganguly, U.
Source: Self-asserted source
Halid Mulaosmanovic via Scopus - Elsevier

Ferroelectric MirrorBit-Integrated Field-Programmable Memory Array for TCAM, Storage, and In-Memory Computing Applications

arXiv
2023 | Other
EID:

2-s2.0-85165712185

Part of ISSN: 23318422
Contributors: Meihar, P.; Srinu, R.; Lashkare, S.; Singh, A.K.; Mulaosmanovic, H.; Deshpande, V.; Dünkel, S.; Beyer, S.; Ganguly, U.
Source: Self-asserted source
Halid Mulaosmanovic via Scopus - Elsevier

Multi-Level Operation of Ferroelectric FET Memory Arrays for Compute-In-Memory Applications

2023 IEEE International Memory Workshop, IMW 2023 - Proceedings
2023 | Conference paper
DOI: 10.1109/IMW56887.2023.10145940
EID:

2-s2.0-85163325572

Part of ISBN: 9781665474597
Contributors: Muller, F.; De, S.; Lederer, M.; Hoffmann, R.; Olivo, R.; Kampfe, T.; Seidel, K.; Ali, T.; Mulaosmanovic, H.; Dunkel, S. et al.
Source: Self-asserted source
Halid Mulaosmanovic via Scopus - Elsevier

Multilevel Operation of Ferroelectric FET Memory Arrays Considering Current Percolation Paths Impacting Switching Behavior

IEEE Electron Device Letters
2023 | Journal article
DOI: 10.1109/LED.2023.3256583
EID:

2-s2.0-85151382726

Part of ISSN: 15580563 07413106
Contributors: Muller, F.; De, S.; Olivo, R.; Lederer, M.; Altawil, A.; Hoffmann, R.; Kampfe, T.; Ali, T.; Dunkel, S.; Mulaosmanovic, H. et al.
Source: Self-asserted source
Halid Mulaosmanovic via Scopus - Elsevier

Powering Disturb-Free Reconfigurable Computing and Tunable Analog Electronics with Dual-Port Ferroelectric FET

arXiv
2023 | Other
DOI: 10.48550/arXiv.2305.01484
EID:

2-s2.0-85160963082

Part of ISSN: 23318422
Contributors: Zhao, Z.; Deng, S.; Chatterjee, S.; Jiang, Z.; Islam, M.S.; Xiao, Y.; Xu, Y.; Meninger, S.; Mohamed, M.; Joshi, R. et al.
Source: Self-asserted source
Halid Mulaosmanovic via Scopus - Elsevier

Powering Disturb-Free Reconfigurable Computing and Tunable Analog Electronics with Dual-Port Ferroelectric FET

ACS Applied Materials and Interfaces
2023 | Journal article
DOI: 10.1021/acsami.3c07827
EID:

2-s2.0-85178500995

Part of ISSN: 19448252 19448244
Contributors: Zhao, Z.; Deng, S.; Chatterjee, S.; Jiang, Z.; Islam, M.S.; Xiao, Y.; Xu, Y.; Meninger, S.; Mohamed, M.; Joshi, R. et al.
Source: Self-asserted source
Halid Mulaosmanovic via Scopus - Elsevier

Roadmap of Ferroelectric Memories: From Discovery to 3D Integration

TechRxiv
2023 | Other
DOI: 10.36227/techrxiv.23573523
EID:

2-s2.0-85165648295
Contributors: De, S.; Lederer, M.; Raffel, Y.; Müller, F.; Lehninger, D.; Sünbül, A.; Dünkel, S.; Ali, T.; Mulaosmanovic, H.; Baig, Md.A. et al.
Source: Self-asserted source
Halid Mulaosmanovic via Scopus - Elsevier

Sub-Nanosecond Switching of Si:HfO<sub>2</sub> Ferroelectric Field-Effect Transistor

Nano Letters
2023 | Journal article
DOI: 10.1021/acs.nanolett.2c04706
EID:

2-s2.0-85148034850

Part of ISSN: 15306992 15306984
Contributors: Dahan, M.M.; Mulaosmanovic, H.; Levit, O.; Dünkel, S.; Beyer, S.; Yalon, E.
Source: Self-asserted source
Halid Mulaosmanovic via Scopus - Elsevier

Tunable Non-Volatile Gate-to-Source/Drain Capacitance of FeFET for Capacitive Synapse

IEEE Electron Device Letters
2023 | Journal article
DOI: 10.1109/LED.2023.3311344
EID:

2-s2.0-85169690882

Part of ISSN: 15580563 07413106
Contributors: Kim, T.-H.; Phadke, O.; Luo, Y.-C.; Mulaosmanovic, H.; Mueller, J.; Duenkel, S.; Beyer, S.; Khan, A.I.; Datta, S.; Yu, S.
Source: Self-asserted source
Halid Mulaosmanovic via Scopus - Elsevier

Asymmetric Double-Gate Ferroelectric FET to Decouple the Tradeoff Between Thickness Scaling and Memory Window

Digest of Technical Papers - Symposium on VLSI Technology
2022 | Conference paper
DOI: 10.1109/VLSITechnologyandCir46769.2022.9830172
EID:

2-s2.0-85135242198

Part of ISSN: 07431562
Contributors: Jiang, Z.; Xiao, Y.; Chatterjee, S.; Mulaosmanovic, H.; Duenkel, S.; Soss, S.; Beyer, S.; Joshi, R.; Chauhan, Y.S.; Amrouch, H. et al.
Source: Self-asserted source
Halid Mulaosmanovic via Scopus - Elsevier

Ferroelectric FET based Context-Switching FPGA Enabling Dynamic Reconfiguration for Adaptive Deep Learning Machines

arXiv
2022 | Other
DOI: 10.48550/arXiv.2212.00089
EID:

2-s2.0-85144794223

Part of ISSN: 23318422
Contributors: Xu, Y.; Zhao, Z.; Xiao, Y.; Yu, T.; Mulaosmanovic, H.; Kleimaier, D.; Duenkel, S.; Beyer, S.; Gong, X.; Joshi, R. et al.
Source: Self-asserted source
Halid Mulaosmanovic via Scopus - Elsevier

Ferroelectric-based synapses and neurons for neuromorphic computing

Neuromorphic Computing and Engineering
2022 | Journal article
DOI: 10.1088/2634-4386/ac4918
EID:

2-s2.0-85133664408

Part of ISSN: 26344386
Contributors: Covi, E.; Mulaosmanovic, H.; Max, B.; Slesazeck, S.; Mikolajick, T.
Source: Self-asserted source
Halid Mulaosmanovic via Scopus - Elsevier

MOx in ferroelectric memories

Metal Oxides for Non-volatile Memory: Materials, Technology and Applications
2022 | Book chapter
Part of DOI: 10.1016/B978-0-12-814629-3.00008-8
EID:

2-s2.0-85131477291

ISBN: 9780128146293 9780128146309
Contributors: Slesazeck, S.; Mulaosmanovic, H.; Hoffmann, M.; Schroeder, U.; Mikolajick, T.; Max, B.
Source: Self-asserted source
Halid Mulaosmanovic via Scopus - Elsevier

On the Feasibility of 1T Ferroelectric FET Memory Array

IEEE Transactions on Electron Devices
2022 | Journal article
DOI: 10.1109/TED.2022.3216819
EID:

2-s2.0-85141646380

Part of ISSN: 15579646 00189383
Contributors: Jiang, Z.; Zhao, Z.; Deng, S.; Xiao, Y.; Xu, Y.; Mulaosmanovic, H.; Duenkel, S.; Beyer, S.; Meninger, S.; Mohamed, M. et al.
Source: Self-asserted source
Halid Mulaosmanovic via Scopus - Elsevier

Three-to-one analog signal modulation with a single back-bias-controlled reconfigurable transistor

Nature Communications
2022 | Journal article
DOI: 10.1038/s41467-022-34533-w
EID:

2-s2.0-85142145279

Part of ISSN: 20411723
Contributors: Simon, M.; Mulaosmanovic, H.; Sessi, V.; Drescher, M.; Bhattacharjee, N.; Slesazeck, S.; Wiatr, M.; Mikolajick, T.; Trommer, J.
Source: Self-asserted source
Halid Mulaosmanovic via Scopus - Elsevier

Back-bias reconfigurable field effect transistor: A flexible add-on functionality for 22 nm FDSOI

2021 Silicon Nanoelectronics Workshop, SNW 2021
2021 | Conference paper
DOI: 10.1109/SNW51795.2021.00005
EID:

2-s2.0-85124904830
Contributors: Sessi, V.; Simon, M.; Slesazeck, S.; Drescher, M.; Mulaosmanovic, H.; Li, K.; Binder, R.; Waidmann, S.; Zeun, A.; Pawlik, A.-S. et al.
Source: Self-asserted source
Halid Mulaosmanovic via Scopus - Elsevier

Current percolation path impacting switching behavior of ferroelectric FETs

VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings
2021 | Conference paper
DOI: 10.1109/VLSI-TSA51926.2021.9440081
EID:

2-s2.0-85108174228
Contributors: Müller, F.; Lederer, M.; Olivo, R.; Ali, T.; Hoffmann, R.; Mulaosmanovic, H.; Beyer, S.; Dunkel, S.; Müller, J.; Müller, S. et al.
Source: Self-asserted source
Halid Mulaosmanovic via Scopus - Elsevier

Demonstration of a p-Type Ferroelectric FET with Immediate Read-After-Write Capability

IEEE Electron Device Letters
2021 | Journal article
DOI: 10.1109/LED.2021.3118645
EID:

2-s2.0-85119597021

Part of ISSN: 15580563 07413106
Contributors: Kleimaier, D.; Mulaosmanovic, H.; Dunkel, S.; Beyer, S.; Soss, S.; Slesazeck, S.; Mikolajick, T.
Source: Self-asserted source
Halid Mulaosmanovic via Scopus - Elsevier

Domains and domain dynamics in fluorite-structured ferroelectrics

Applied Physics Reviews
2021 | Journal article
DOI: 10.1063/5.0047977
EID:

2-s2.0-85105703262

Part of ISSN: 19319401
Contributors: Lee, D.H.; Lee, Y.; Yang, K.; Park, J.Y.; Kim, S.H.; Reddy, P.R.S.; Materano, M.; Mulaosmanovic, H.; Mikolajick, T.; Jones, J.L. et al.
Source: Self-asserted source
Halid Mulaosmanovic via Scopus - Elsevier

Effect of the Si Doping Content in HfO<inf>2</inf>Film on the Key Performance Metrics of Ferroelectric FETs

IEEE Transactions on Electron Devices
2021 | Journal article
DOI: 10.1109/TED.2021.3100005
EID:

2-s2.0-85112658096

Part of ISSN: 15579646 00189383
Contributors: Mulaosmanovic, H.; Dunkel, S.; Kleimaier, D.; Kacimi, A.E.; Beyer, S.; Breyer, E.T.; Mikolajick, T.; Slesazeck, S.
Source: Self-asserted source
Halid Mulaosmanovic via Scopus - Elsevier

Ferroelectric field-effect transistors based on HfO<inf>2</inf>: A review

Nanotechnology
2021 | Journal article
DOI: 10.1088/1361-6528/ac189f
EID:

2-s2.0-85116497856

Part of ISSN: 13616528 09574484
Contributors: Mulaosmanovic, H.; Breyer, E.T.; Dünkel, S.; Beyer, S.; Mikolajick, T.; Slesazeck, S.
Source: Self-asserted source
Halid Mulaosmanovic via Scopus - Elsevier

Ferroelectric transistors with asymmetric double gate for memory window exceeding 12 v and disturb-free read

Nanoscale
2021 | Journal article
DOI: 10.1039/d1nr05107e
EID:

2-s2.0-85116923880

Part of ISSN: 20403372 20403364
Contributors: Mulaosmanovic, H.; Kleimaier, D.; Dunkel, S.; Beyer, S.; Mikolajick, T.; Slesazeck, S.
Source: Self-asserted source
Halid Mulaosmanovic via Scopus - Elsevier

Hafnia-based double layer ferroelectric tunnel junctions as artificial synapses for neuromorphic computing

arXiv
2021 | Other
EID:

2-s2.0-85111235395

Part of ISSN: 23318422
Contributors: Max, B.; Hoffmann, M.; Mulaosmanovic, H.; Slesazeck, S.; Mikolajick, T.
Source: Self-asserted source
Halid Mulaosmanovic via Scopus - Elsevier

Next generation ferroelectric materials for semiconductor process integration and their applications

Journal of Applied Physics
2021 | Journal article
DOI: 10.1063/5.0037617
EID:

2-s2.0-85102461997

Part of ISSN: 10897550 00218979
Contributors: Mikolajick, T.; Slesazeck, S.; Mulaosmanovic, H.; Park, M.H.; Fichtner, S.; Lomenzo, P.D.; Hoffmann, M.; Schroeder, U.
Source: Self-asserted source
Halid Mulaosmanovic via Scopus - Elsevier

Perspective on ferroelectric, hafnium oxide based transistors for digital beyond von-Neumann computing

Applied Physics Letters
2021 | Journal article
DOI: 10.1063/5.0035281
EID:

2-s2.0-85100555779

Part of ISSN: 00036951
Contributors: Breyer, E.T.; Mulaosmanovic, H.; Mikolajick, T.; Slesazeck, S.
Source: Self-asserted source
Halid Mulaosmanovic via Scopus - Elsevier

Reliability aspects of ferroelectric hafnium oxide for application in non-volatile memories

IEEE International Reliability Physics Symposium Proceedings
2021 | Conference paper
DOI: 10.1109/IRPS46558.2021.9405215
EID:

2-s2.0-85105545109

Part of ISSN: 15417026
Contributors: Mulaosmanovic, H.; Lomenzo, P.D.; Schroeder, U.; Slesazeck, S.; Mikolajick, T.; Max, B.
Source: Self-asserted source
Halid Mulaosmanovic via Scopus - Elsevier

A Silicon Nanowire Ferroelectric Field-Effect Transistor

Advanced Electronic Materials
2020 | Journal article
DOI: 10.1002/aelm.201901244
EID:

2-s2.0-85080857992

Part of ISBN:

2199160X
Contributors: Sessi, V.; Simon, M.; Mulaosmanovic, H.; Pohl, D.; Loeffler, M.; Mauersberger, T.; Fengler, F.P.G.; Mittmann, T.; Richter, C.; Slesazeck, S. et al.
Source: Self-asserted source
Halid Mulaosmanovic via Scopus - Elsevier

Application and benefits of target programming algorithms for ferroelectric HfO<inf>2</inf>transistors

Technical Digest - International Electron Devices Meeting, IEDM
2020 | Conference paper
DOI: 10.1109/IEDM13553.2020.9371975
EID:

2-s2.0-85102957018

Part of ISSN: 01631918
Contributors: Zhou, H.; Ocker, J.; Padovani, A.; Pesic, M.; Trentzsch, M.; Dunkel, S.; Mulaosmanovic, H.; Slesazeck, S.; Larcher, L.; Beyer, S. et al.
Source: Self-asserted source
Halid Mulaosmanovic via Scopus - Elsevier

Compact FeFET Circuit Building Blocks for Fast and Efficient Nonvolatile Logic-in-Memory

IEEE Journal of the Electron Devices Society
2020 | Journal article
DOI: 10.1109/JEDS.2020.2987084
EID:

2-s2.0-85084086767
Contributors: Breyer, E.T.; Mulaosmanovic, H.; Trommer, J.; Melde, T.; Dunkel, S.; Trentzsch, M.; Beyer, S.; Slesazeck, S.; Mikolajick, T.
Source: Self-asserted source
Halid Mulaosmanovic via Scopus - Elsevier

FeFET: A versatile CMOS compatible device with game-changing potential

2020 IEEE International Memory Workshop, IMW 2020 - Proceedings
2020 | Conference paper
DOI: 10.1109/IMW48823.2020.9108150
EID:

2-s2.0-85086996668
Contributors: Beyer, S.; Dünkel, S.; Trentzsch, M.; Müller, J.; Hellmich, A.; Utess, D.; Paul, J.; Kleimaier, D.; Pellerin, J.; Mulaosmanovic, H. et al.
Source: Self-asserted source
Halid Mulaosmanovic via Scopus - Elsevier

FeFETs for Neuromorphic Systems

Topics in Applied Physics
2020 | Book chapter
DOI: 10.1007/978-981-15-1212-4_20
EID:

2-s2.0-85083993439

Part of ISSN: 14370859 03034216
Contributors: Mulaosmanovic, H.; Mikolajick, T.; Slesazeck, S.
Source: Self-asserted source
Halid Mulaosmanovic via Scopus - Elsevier

Flexible memory, bit-passing and mixed logic/ memory operation of two intercoupled FeFET arrays

Proceedings - IEEE International Symposium on Circuits and Systems
2020 | Conference paper
EID:

2-s2.0-85100595645

Part of ISSN: 02714310
Contributors: Breyer, E.T.; Mulaosmanovic, H.; Slesazeck, S.; Mikolajick, T.
Source: Self-asserted source
Halid Mulaosmanovic via Scopus - Elsevier

Frequency Mixing with HfO<inf>2</inf>-Based Ferroelectric Transistors

ACS Applied Materials and Interfaces
2020 | Journal article
DOI: 10.1021/acsami.0c11155
EID:

2-s2.0-85092749452

Part of ISSN: 19448252 19448244
Contributors: Mulaosmanovic, H.; Dünkel, S.; Trentzsch, M.; Beyer, S.; Breyer, E.T.; Mikolajick, T.; Slesazeck, S.
Source: Self-asserted source
Halid Mulaosmanovic via Scopus - Elsevier

Hafnia-based double-layer ferroelectric tunnel junctions as artificial synapses for neuromorphic computing

ACS Applied Electronic Materials
2020 | Journal article
DOI: 10.1021/acsaelm.0c00832
EID:

2-s2.0-85097957346

Part of ISSN: 26376113
Contributors: Max, B.; Hoffmann, M.; Mulaosmanovic, H.; Slesazeck, S.; Mikolajick, T.
Source: Self-asserted source
Halid Mulaosmanovic via Scopus - Elsevier

Hafnium oxide as an enabler for competitive ferroelectric devices

2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020
2020 | Conference paper
DOI: 10.1109/SNW50361.2020.9131618
EID:

2-s2.0-85092166552
Contributors: Mikolajick, T.; Mulaosmanovic, H.; Lomenzo, P.; Hoffmann, M.; Slesazeck, S.; Schroeder, U.
Source: Self-asserted source
Halid Mulaosmanovic via Scopus - Elsevier

HfO<inf>2</inf>-based ferroelectric FETs: Performance of single devices and mini-arrays

2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020
2020 | Conference paper
DOI: 10.1109/VLSI-TSA48913.2020.9203615
EID:

2-s2.0-85086994372
Contributors: Mulaosmanovic, H.; Muller, F.; Breyer, E.T.; Dunkel, S.; Trentzsch, M.; Beyer, S.; Mikolajick, T.; Slesazeck, S.
Source: Self-asserted source
Halid Mulaosmanovic via Scopus - Elsevier

Impact of Read Operation on the Performance of HfO<inf>2</inf>-Based Ferroelectric FETs

IEEE Electron Device Letters
2020 | Journal article
DOI: 10.1109/LED.2020.3007220
EID:

2-s2.0-85091038387

Part of ISBN:

15580563 07413106
Contributors: Mulaosmanovic, H.; Dünkel, S.; Müller, J.; Trentzsch, M.; Beyer, S.; Breyer, E.T.; Mikolajick, T.; Slesazeck, S.
Source: Self-asserted source
Halid Mulaosmanovic via Scopus - Elsevier

Interplay between Switching and Retention in HfO 2 -Based Ferroelectric FETs

IEEE Transactions on Electron Devices
2020 | Journal article
DOI: 10.1109/TED.2020.3004033
EID:

2-s2.0-85091883641

Part of ISBN:

15579646 00189383
Contributors: Mulaosmanovic, H.; Muller, F.; Lederer, M.; Ali, T.; Hoffmann, R.; Seidel, K.; Zhou, H.; Ocker, J.; Mueller, S.; Dunkel, S. et al.
Source: Self-asserted source
Halid Mulaosmanovic via Scopus - Elsevier

Investigation of Accumulative Switching in Ferroelectric FETs: Enabling Universal Modeling of the Switching Behavior

IEEE Transactions on Electron Devices
2020 | Journal article
DOI: 10.1109/TED.2020.3031249
EID:

2-s2.0-85097345678

Part of ISSN: 15579646 00189383
Contributors: Mulaosmanovic, H.; Dunkel, S.; Trentzsch, M.; Beyer, S.; Breyer, E.T.; Mikolajick, T.; Slesazeck, S.
Source: Self-asserted source
Halid Mulaosmanovic via Scopus - Elsevier

Nonvolatile Field-Effect Transistors Using Ferroelectric-Doped HfO<sub>2</sub> Films

Topics in Applied Physics
2020 | Book chapter
DOI: 10.1007/978-981-15-1212-4_4
EID:

2-s2.0-85084005659

Part of ISSN: 14370859 03034216
Contributors: Schroeder, U.; Slesazeck, S.; Mulaosmanovic, H.; Mikolajick, T.
Source: Self-asserted source
Halid Mulaosmanovic via Scopus - Elsevier
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