Personal information

Switzerland

Activities

Employment (1)

Swiss Federal Laboratories for Material Science and Technology: Dübendorf, Zürich, CH

2017-10-01 to present (Materials Meet Life)
Employment
Source: Self-asserted source
Agnes Gubicza

Education and qualifications (1)

Budapest University of Technology and Economics: Budapest, HU

2013-09-01 to 2016-12-19 | PhD in physics
Education
Source: Self-asserted source
Agnes Gubicza

Works (10)

Conductive Hybrid Cu‐HHTP‐TCNQ Metal–Organic Frameworks for Chemiresistive Sensing

Advanced Electronic Materials
2022-03 | Journal article
Contributors: Lars Lüder; Agnes Gubicza; Michael Stiefel; Jan Overbeck; Davide Beretta; Amin Sadeghpour; Antonia Neels; Peter N. Nirmalraj; René M. Rossi; Claudio Toncelli et al.
Source: check_circle
Crossref

A non-oxidizing fabrication method for lithographic break junctions of sensitive metals

Nanoscale Advances
2020 | Journal article
Contributors: Anna Nyáry; Agnes Gubicza; Jan Overbeck; László Pósa; Péter Makk; Michel Calame; András Halbritter; Miklós Csontos
Source: check_circle
Crossref

Exploiting supramolecular assemblies for filterless ultra-narrowband organic photodetectors with inkjet fabrication capability

Journal of Materials Chemistry C
2019 | Journal article
Contributors: Surendra B. Anantharaman; Karen Strassel; Matthias Diethelm; Agnes Gubicza; Erwin Hack; Roland Hany; Frank A. Nüesch; Jakob Heier
Source: check_circle
Crossref

Quantum interference enhanced chemical responsivity in single-molecule dithienoborepin junctions.

Chemistry (Weinheim an der Bergstrasse, Germany)
2019-09 | Journal article
Contributors: Baghernejad M; Van Dyck C; Bergfield J; Levine DR; Gubicza A; Tovar JD; Calame M; Broekmann P; Hong W
Source: Self-asserted source
Agnes Gubicza via Europe PubMed Central

Universal 1/f type current noise of Ag filaments in redox-based memristive nanojunctions.

Nanoscale
2019-03 | Journal article
Contributors: Sánta B; Balogh Z; Gubicza A; Pósa L; Krisztián D; Mihály G; Csontos M; Halbritter A
Source: Self-asserted source
Agnes Gubicza via Europe PubMed Central

In situ impedance matching in Nb/Nb2O5/PtIr memristive nanojunctions for ultra-fast neuromorphic operation.

Nanoscale
2018-10 | Journal article
Contributors: Molnár D; Török TN; Sánta B; Gubicza A; Magyarkuti A; Hauert R; Kiss G; Halbritter A; Csontos M
Source: Self-asserted source
Agnes Gubicza via Europe PubMed Central

Asymmetry-induced resistive switching in Ag-Ag2S-Ag memristors enabling a simplified atomic-scale memory design.

Scientific reports
2016-08 | Journal article
Contributors: Gubicza A; Manrique DZ; Pósa L; Lambert CJ; Mihály G; Csontos M; Halbritter A
Source: Self-asserted source
Agnes Gubicza via Europe PubMed Central

Resistive switching in metallic Ag2S memristors due to a local overheating induced phase transition.

Nanoscale
2015-07 | Journal article
Contributors: Gubicza A; Csontos M; Halbritter A; Mihály G
Source: Self-asserted source
Agnes Gubicza via Europe PubMed Central

Non-exponential resistive switching in Ag2S memristors: a key to nanometer-scale non-volatile memory devices.

Nanoscale
2015-03 | Journal article
Contributors: Gubicza A; Csontos M; Halbritter A; Mihály G
Source: Self-asserted source
Agnes Gubicza via Europe PubMed Central

A fast operation of nanometer-scale metallic memristors: highly transparent conductance channels in Ag2S devices.

Nanoscale
2014-01 | Journal article
Contributors: Geresdi A; Csontos M; Gubicza A; Halbritter A; Mihály G
Source: Self-asserted source
Agnes Gubicza via Europe PubMed Central