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Works (23)

High-Frequency Microwave Detection With GaN HEMTs in the Subthreshold Regime

IEEE Transactions on Microwave Theory and Techniques
2024 | Journal article
Contributors: Gaudencio Paz-Martínez; Ignacio Íñiguez-de-la-Torre; Philippe Artillan; Héctor Sánchez-Martín; Sergio García-Sánchez; Tomás González; Javier Mateos
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Crossref

Influence of Surface States in AlGaN/GaN Nanodiodes Analyzed by Preconditioned Transient Current Measurements

IEEE Transactions on Microwave Theory and Techniques
2024 | Journal article
Contributors: Héctor Sánchez-Martín; Luís Cótimos Nunes; Ignacio Íñiguez-de-la-Torre; Elsa Pérez-Martín; Susana Pérez; Javier Mateos; Tomás González; José Carlos Pedro
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Characterization of trap-related transient-current effects in AlGaN/GaN nanochannels

2023 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMIC)
2023-11-08 | Conference paper
Contributors: H. Sánchez-Martín; I. Íñiguez-de-la-Torre; J. Mateos; S. Pérez; T. González; Luís C. Nunes; José C. Pedro
Source: Self-asserted source
Héctor Sánchez Martín

Current and voltage responsivity up to 110 GHz in GaN asymmetric nano-diodes

Applied Physics Letters
2023-09-18 | Journal article
Contributors: I. Íñiguez-de-la-Torre; E. Pérez-Martín; P. Artillan; E. Rochefeuille; H. Sánchez-Martín; G. Paz-Martínez; T. González; J. Mateos
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Crossref

Low temperature memory effects in AlGaN/GaN nanochannels

Applied Physics Letters
2023-09-04 | Journal article
Contributors: H. Sánchez-Martín; E. Pérez-Martín; G. Paz-Martínez; J. Mateos; T. González; I. Íñiguez-de-la-Torre
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Crossref

Trap-assisted enhancement of the responsivity in asymmetric planar GaN-based nanodiodes at low temperature

Nanotechnology
2023-08-06 | Journal article
Contributors: E Pérez-Martín; H Sánchez-Martín; T González; J Mateos; I Íñiguez-de-la-Torre
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Crossref

Analysis of GaN-Based HEMTs Operating as RF Detectors Over a Wide Temperature Range

IEEE Transactions on Microwave Theory and Techniques
2023-07 | Journal article
Contributors: Gaudencio Paz-Martínez; Ignacio Íñiguez-de-la-Torre; Héctor Sánchez-Martín; Tomás González; Javier Mateos
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Crossref

Comparison of GaN and InGaAs high electron mobility transistors as zero-bias microwave detectors

Journal of Applied Physics
2022-10-07 | Journal article
Contributors: G. Paz-Martínez; I. Íñiguez-de-la-Torre; H. Sánchez-Martín; B. García-Vasallo; N. Wichmann; T. González; J. Mateos
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Crossref

Temperature Behavior of Gunn Oscillations in Planar InGaAs Diodes

IEEE Electron Device Letters
2021-08 | Journal article
Contributors: J. A. Novoa-Lopez; G. Paz-Martinez; H. Sanchez-Martin; Y. Lechaux; I. Iniguez-de-la-Torre; T. Gonzalez; J. Mateos
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Crossref

Analysis of trap states in AlGaN/GaN self-switching diodes via impedance measurements

Microelectronics Reliability
2020 | Journal article
EID:

2-s2.0-85096355849

Part of ISSN: 00262714
Contributors: Pérez-Martín, E.; Vaquero, D.; Sánchez-Martín, H.; Gaquière, C.; Raposo, V.J.; González, T.; Mateos, J.; Iñiguez-de-la-Torre, I.
Source: Self-asserted source
Héctor Sánchez Martín via Scopus - Elsevier

Comprehensive characterization of Gunn oscillations in In<inf>0.53</inf>Ga<inf>0.47</inf>As planar diodes

Semiconductor Science and Technology
2020 | Journal article
EID:

2-s2.0-85092434684

Part of ISSN: 13616641 02681242
Contributors: Lechaux, Y.; Íñiguez-De-La-Torre, I.; Novoa-López, J.A.; García-Pérez, Ó.; Sánchez-Martín, H.; Millithaler, J.F.; Vaquero, D.; Delgado-Notario, J.A.; Clericò, V.; González, T. et al.
Source: Self-asserted source
Héctor Sánchez Martín via Scopus - Elsevier

Trap-related frequency dispersion of zero-bias microwave responsivity at low temperature in GaN-based self-switching diodes

Nanotechnology
2020-10-02 | Journal article
Contributors: E Pérez-Martín; T González; D Vaquero; H Sánchez-Martín; C Gaquière; V J Raposo; J Mateos; I Iñiguez-de-la-Torre
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Crossref
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Fabrication Process of Non-Linear Planar Diodes Based on GaN

Proceedings of the 2018 12th Spanish Conference on Electron Devices, CDE 2018
2018 | Conference paper
EID:

2-s2.0-85061498960

Contributors: Novoa-López, J.A.; Lechaux, Y.; Delgado-Notario, J.A.; Cierico, V.; Diez, E.; Sánchez-Martín, H.; Vasallo, B.G.; Íñiguez-De-La-Torre, I.; Mateos, J.; Pérez, S. et al.
Source: Self-asserted source
Héctor Sánchez Martín via Scopus - Elsevier

GaN nanodiode arrays with improved design for zero-bias sub-THz detection

Semiconductor Science and Technology
2018 | Journal article
EID:

2-s2.0-85053103885

Part of ISSN: 13616641 02681242
Contributors: Sánchez-Martín, H.; Sánchez-Martín, S.; Íñiguez-De-La-Torre, I.; Pérez, S.; Novoa, J.A.; Ducournau, G.; Grimbert, B.; Gaquière, C.; González, T.; Mateos, J.
Source: Self-asserted source
Héctor Sánchez Martín via Scopus - Elsevier

Voltage controlled sub-THz detection with gated planar asymmetric nanochannels

Applied Physics Letters
2018 | Journal article
EID:

2-s2.0-85050740363

Part of ISSN: 00036951
Contributors: Sánchez-Martín, H.; Mateos, J.; Novoa, J.A.; Delgado-Notario, J.A.; Meziani, Y.M.; Pérez, S.; Theveneau, H.; Ducournau, G.; Gaquière, C.; González, T. et al.
Source: Self-asserted source
Héctor Sánchez Martín via Scopus - Elsevier

Anomalous DC and RF behavior of virgin AlGaN/AlN/GaN HEMTs

Semiconductor Science and Technology
2017 | Journal article
WOSUID:

WOS:000395463100001

Contributors: Sanchez-Martin, H.; Garcia-Perez, O.; Perez, S.; Altuntas, P.; Hoel, V.; Rennesson, S.; Cordier, Y.; Gonzalez, T.; Mateos, J.; Iniguez-de-la-Torre, I.
Source: Self-asserted source
Héctor Sánchez Martín via ResearcherID
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Geometry and bias dependence of trapping effects in planar GaN nanodiodes

2017 Spanish Conference on Electron Devices, CDE 2017
2017 | Conference paper
EID:

2-s2.0-85019225070

Contributors: Sanchez-Martin, H.; Garcia-Perez, O.; Iniguez-De-La-Torre, I.; Perez, S.; Mateos, J.; Gonzalez, T.; Gaquiere, C.
Source: Self-asserted source
Héctor Sánchez Martín via Scopus - Elsevier

Geometry and bias dependence of trapping effects in planar GaN nanodiodes

2017 Spanish Conference on Electron Devices
2017 | Book chapter
WOSUID:

WOS:000403327900045

Contributors: Sanchez-Martin, H.; Garcia-Perez, O.; Iniguez-de-la-Torre, I.; Perez, S.; Mateos, J.; Gonzalez, T.; Gaquiere, C.; Ieee,
Source: Self-asserted source
Héctor Sánchez Martín via ResearcherID

Microwave detection up to 43.5 GHz by GaN nano-diodes: Experimental and analytical responsivity

2017 Spanish Conference on Electron Devices
2017 | Book chapter
WOSUID:

WOS:000403327900050

Contributors: Sanchez-Martin, H.; Sanchez-Martin, S.; Garcia-Perez, O.; Perez, S.; Mateos, J.; Gonzalez, T.; Iniguez-de-la-Torre, I.; Gaquiere, C.; Ieee,
Source: Self-asserted source
Héctor Sánchez Martín via ResearcherID

Microwave detection up to 43.5 GHz by GaN nanodiodes: Experimental and analytical responsivity

2017 Spanish Conference on Electron Devices, CDE 2017
2017 | Conference paper
EID:

2-s2.0-85019237347

Contributors: Sanchez-Martin, H.; Sanchez-Martin, S.; Garcia-Perez, O.; Perez, S.; Mateos, J.; Gonzalez, T.; Iniguez-De-La-Torre, I.; Gaquiere, C.
Source: Self-asserted source
Héctor Sánchez Martín via Scopus - Elsevier

Characterization and modeling of traps and RF frequency dispersion in AlGaN/AlN/GaN HEMTs

EuMIC 2016 - 11th European Microwave Integrated Circuits Conference
2016 | Conference paper
EID:

2-s2.0-85010447533

Contributors: Sánchez-Martín, H.; García-Pérez, O.; Iñiguez-De-La-Torre, I.; Pérez, S.; González, T.; Mateos, J.; Altuntas, P.; Defrance, N.; Lesecq, M.; Hoel, V. et al.
Source: Self-asserted source
Héctor Sánchez Martín via Scopus - Elsevier

Characterization and modeling of traps and RF frequency dispersion in AlGaN/AlN/GaN HEMTs

2016 11th European Microwave Integrated Circuits Conference
2016 | Book
WOSUID:

WOS:000391426200040

Contributors: Sanchez-Martin, Hector; Garcia-Perez, Oscar; Iniguez-de-la-Torre, Ignacio; Perez, Susana; Gonzalez, Tomas; Mateos, Javier; Altuntas, Philippe; Defrance, Nicolas; Lesecq, Marie; Hoel, Virginie et al.
Source: Self-asserted source
Héctor Sánchez Martín via ResearcherID

Shot-noise suppression effects in In GaAs planar diodes at room temperature

19th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures
2015 | Book chapter
WOSUID:

WOS:000366236800061

Contributors: Garcia-Perez, O.; Sanchez-Martin, H.; Mateos, J.; Perez, S.; Westlund, A.; Grahn, J.; Gonzalez, T.
Source: Self-asserted source
Héctor Sánchez Martín via ResearcherID
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