Personal information

South Korea

Activities

Employment (4)

Korea Institute of Industrial Technology: -, KR

2019-10-28 to present
Employment
Source: Self-asserted source
Sung Hyun Park

University of Minnesota Twin Cities: Minneapolis, MN, US

2017-06-12 to 2019-10-21 | Research Associate (Mechanical Engineering)
Employment
Source: Self-asserted source
Sung Hyun Park

University of Minnesota Twin Cities: Minneapolis, MN, US

2015-07-01 to 2017-06-11 | Postdoctoral Associate (Mechanical Engineering)
Employment
Source: Self-asserted source
Sung Hyun Park

Yale University: New Haven, CT, US

2013-02-01 to 2015-06-30 | Postdoctoral Associate (Electrical Engineering)
Employment
Source: Self-asserted source
Sung Hyun Park

Education and qualifications (2)

Seoul National University: Gwanak-gu, Seoul, KR

2006-09-01 to 2012-08-29 | PhD (Materials Science and Engineering)
Education
Source: Self-asserted source
Sung Hyun Park

Seoul National University: Gwanak-gu, Seoul, KR

1999-03-02 to 2006-08-31 | BS (Materials Science and Engineering)
Education
Source: Self-asserted source
Sung Hyun Park

Works (37)

3D‐Printed Artificial Cilia Arrays: A Versatile Tool for Customizable Mechanosensing

Advanced Science
2023-09 | Journal article
Contributors: Phillip Glass; Andy Shar; Charles Pemberton; Ethan Nguyen; Sung Hyun Park; Daeha Joung
Source: check_circle
Crossref

3D Printable One‐Part Carbon Nanotube‐Elastomer Ink for Health Monitoring Applications

Advanced Functional Materials
2023-01 | Journal article
Contributors: Andy Shar; Phillip Glass; Sung Hyun Park; Daeha Joung
Source: check_circle
Crossref

Sustainable biopolymeric hydrogel interphase for dendrite-free aqueous zinc-ion batteries

Chemical Engineering Journal
2022 | Journal article
EID:

2-s2.0-85119198843

Part of ISSN: 13858947
Contributors: Park, J.-H.; Hyun Park, S.; Joung, D.; Kim, C.
Source: Self-asserted source
Sung Hyun Park via Scopus - Elsevier

3D-printed flexible organic light-emitting diode displays

Science Advances
2022-01-07 | Journal article
Contributors: Ruitao Su; Sung Hyun Park; Xia Ouyang; Song Ih Ahn; Michael C. McAlpine
Source: check_circle
Crossref
grade
Preferred source (of 2)‎

Insight into the Critical Role of Surface Hydrophilicity for Dendrite-Free Zinc Metal Anodes

ACS Energy Letters
2021 | Journal article
EID:

2-s2.0-85114036560

Part of ISSN: 23808195
Contributors: Park, S.H.; Byeon, S.Y.; Park, J.-H.; Kim, C.
Source: Self-asserted source
Sung Hyun Park via Scopus - Elsevier

3D Printed Neural Regeneration Devices

Advanced Functional Materials
2020 | Journal article
EID:

2-s2.0-85075116559

Part of ISSN: 16163028 1616301X
Contributors: Joung, D.; Lavoie, N.S.; Guo, S.-Z.; Park, S.H.; Parr, A.M.; McAlpine, M.C.
Source: Self-asserted source
Sung Hyun Park via Scopus - Elsevier

Heterogeneously integrated flexible microwave amplifiers on a cellulose nanofibril substrate

Nature Communications
2020 | Journal article
EID:

2-s2.0-85086732867

Part of ISSN: 20411723
Contributors: Zhang, H.; Li, J.; Liu, D.; Min, S.; Chang, T.-H.; Xiong, K.; Park, S.H.; Kim, J.; Jung, Y.H.; Park, J. et al.
Source: Self-asserted source
Sung Hyun Park via Scopus - Elsevier

3D printed electrically-driven soft actuators

Extreme Mechanics Letters
2018 | Journal article
EID:

2-s2.0-85042849359

Part of ISSN: 23524316
Contributors: Haghiashtiani, G.; Habtour, E.; Park, S.-H.; Gardea, F.; McAlpine, M.C.
Source: Self-asserted source
Sung Hyun Park via Scopus - Elsevier

3D Printed Organ Models with Physical Properties of Tissue and Integrated Sensors

Advanced Materials Technologies
2018 | Journal article
EID:

2-s2.0-85043681997

Part of ISSN: 2365709X
Contributors: Qiu, K.; Zhao, Z.; Haghiashtiani, G.; Guo, S.-Z.; He, M.; Su, R.; Zhu, Z.; Bhuiyan, D.B.; Murugan, P.; Meng, F. et al.
Source: Self-asserted source
Sung Hyun Park via Scopus - Elsevier

3D Printed Polymer Photodetectors

Advanced Materials
2018 | Journal article
EID:

2-s2.0-85052785821

Part of ISSN: 15214095 09359648
Contributors: Park, S.H.; Su, R.; Jeong, J.; Guo, S.-Z.; Qiu, K.; Joung, D.; Meng, F.; McAlpine, M.C.
Source: Self-asserted source
Sung Hyun Park via Scopus - Elsevier

3D Printed Stem-Cell Derived Neural Progenitors Generate Spinal Cord Scaffolds

Advanced Functional Materials
2018 | Journal article
EID:

2-s2.0-85052367271

Part of ISSN: 16163028 1616301X
Contributors: Joung, D.; Truong, V.; Neitzke, C.C.; Guo, S.-Z.; Walsh, P.J.; Monat, J.R.; Meng, F.; Park, S.H.; Dutton, J.R.; Parr, A.M. et al.
Source: Self-asserted source
Sung Hyun Park via Scopus - Elsevier

3D Printed Stretchable Tactile Sensors

Advanced Materials
2017 | Journal article
EID:

2-s2.0-85018779049

Part of ISSN: 15214095 09359648
Contributors: Guo, S.-Z.; Qiu, K.; Meng, F.; Park, S.H.; McAlpine, M.C.
Source: Self-asserted source
Sung Hyun Park via Scopus - Elsevier

Strain Balanced AlGaN/GaN/AlGaN nanomembrane HEMTs

Scientific Reports
2017 | Journal article
EID:

2-s2.0-85026228630

Part of ISSN: 20452322
Contributors: Chang, T.-H.; Xiong, K.; Park, S.H.; Yuan, G.; Ma, Z.; Han, J.
Source: Self-asserted source
Sung Hyun Park via Scopus - Elsevier

New directions in GaN photonics enabled by electrochemical processes

ECS Transactions
2016 | Conference paper
EID:

2-s2.0-85010660752

Part of ISSN: 19385862 19386737
Contributors: Zhang, C.; Yuan, G.; Xiong, K.; Park, S.H.; Han, J.
Source: Self-asserted source
Sung Hyun Park via Scopus - Elsevier

Applications of electrochemistry for novel wide bandgap GaN devices

ECS Transactions
2015 | Conference paper
EID:

2-s2.0-84931330514

Part of ISSN: 19385862 19386737
Contributors: Park, S.H.; Zhang, C.; Yuan, G.; Chen, D.; Han, J.
Source: Self-asserted source
Sung Hyun Park via Scopus - Elsevier

Growth of high quality Ge layer on silica nano-spheres integrated Ge/Si template using UHV-CVD

ECS Journal of Solid State Science and Technology
2015 | Journal article
EID:

2-s2.0-84923360814

Part of ISSN: 21628777 21628769
Contributors: Shin, K.W.; Park, S.H.; Park, Y.; Yoon, E.
Source: Self-asserted source
Sung Hyun Park via Scopus - Elsevier

Mesoporous GaN for Photonic Engineering-Highly Reflective GaN Mirrors as an Example

ACS Photonics
2015 | Journal article
EID:

2-s2.0-84937033312

Part of ISSN: 23304022
Contributors: Zhang, C.; Park, S.H.; Chen, D.; Lin, D.-W.; Xiong, W.; Kuo, H.-C.; Lin, C.-F.; Cao, H.; Han, J.
Source: Self-asserted source
Sung Hyun Park via Scopus - Elsevier

Reduction in threading dislocation density in ge epitaxial layers grown on Si(001) substrates by using rapid thermal annealing

Journal of the Korean Physical Society
2015 | Journal article
EID:

2-s2.0-84947429807

Part of ISSN: 19768524 03744884
Contributors: Shin, K.W.; Park, S.H.; Park, S.; Yoon, E.; Oh, S.; Park, Y.
Source: Self-asserted source
Sung Hyun Park via Scopus - Elsevier

Wide Bandgap Semiconductor Materials and Devices 16

ECS Transactions
2015 | Conference paper
EID:

2-s2.0-85091306667

Part of ISSN: 19385862 19386737
Source: Self-asserted source
Sung Hyun Park via Scopus - Elsevier

Effects of TMSb overpressure on InSb surface morphology for InSb epitaxial growth using low pressure metalorganic chemical vapor deposition

Journal of Crystal Growth
2014 | Journal article
EID:

2-s2.0-84906957845

Part of ISSN: 00220248
Contributors: Park, S.; Jung, J.; Seok, C.; Shin, K.W.; Hyun Park, S.; Nanishi, Y.; Park, Y.; Yoon, E.
Source: Self-asserted source
Sung Hyun Park via Scopus - Elsevier

Fabrication of InGaN light-emitting diodes with embedded air-gap disks using laser-drilling and electrochemical processes

Applied Physics Express
2014 | Journal article
EID:

2-s2.0-84904677210

Part of ISSN: 18820786 18820778
Contributors: Lin, C.-F.; Tseng, Y.-H.; Lee, W.-C.; Hsu, W.-J.; Chen, Y.-L.; Park, S.-H.; Han, J.
Source: Self-asserted source
Sung Hyun Park via Scopus - Elsevier

New directions in GaN material research: Thinner and smaller

Proceedings of SPIE - The International Society for Optical Engineering
2014 | Conference paper
EID:

2-s2.0-84901809822

Part of ISSN: 1996756X 0277786X
Contributors: Yuan, G.; Park, S.H.; Leung, B.; Han, J.
Source: Self-asserted source
Sung Hyun Park via Scopus - Elsevier

Semipolar (202̄1) GaN and InGaN quantum wells on sapphire substrates

Applied Physics Letters
2014 | Journal article
EID:

2-s2.0-84905671276

Part of ISSN: 00036951
Contributors: Leung, B.; Wang, D.; Kuo, Y.-S.; Xiong, K.; Song, J.; Chen, D.; Park, S.H.; Hong, S.Y.; Choi, J.W.; Han, J.
Source: Self-asserted source
Sung Hyun Park via Scopus - Elsevier

Single crystal gallium nitride nanomembrane photoconductor and field effect transistor

Advanced Functional Materials
2014 | Journal article
EID:

2-s2.0-84927138671

Part of ISSN: 16163028 1616301X
Contributors: Xiong, K.; Park, S.H.; Song, J.; Yuan, G.; Chen, D.; Leung, B.; Han, J.
Source: Self-asserted source
Sung Hyun Park via Scopus - Elsevier

Wide bandgap III-nitride nanomembranes for optoelectronic applications

Nano Letters
2014 | Journal article
EID:

2-s2.0-84906081282

Part of ISSN: 15306992 15306984
Contributors: Park, S.H.; Yuan, G.; Chen, D.; Xiong, K.; Song, J.; Leung, B.; Han, J.
Source: Self-asserted source
Sung Hyun Park via Scopus - Elsevier

Defect states of a-plane GaN grown on r-plane sapphire by controlled integration of silica nano-spheres

Journal of Crystal Growth
2013 | Journal article
EID:

2-s2.0-84899795730

Part of ISSN: 00220248
Contributors: Pak, S.W.; Lee, D.U.; Kim, E.K.; Park, S.H.; Joo, K.; Yoon, E.
Source: Self-asserted source
Sung Hyun Park via Scopus - Elsevier

Less strained and more efficient GaN light-emitting diodes with embedded silica hollow nanospheres

Scientific Reports
2013 | Journal article
EID:

2-s2.0-84887777234

Part of ISSN: 20452322
Contributors: Kim, J.; Woo, H.; Joo, K.; Tae, S.; Park, J.; Moon, D.; Park, S.H.; Jang, J.; Cho, Y.; Park, J. et al.
Source: Self-asserted source
Sung Hyun Park via Scopus - Elsevier

Growth of GaN branched α-Si <sub>3</sub>N <sub>4</sub> nanowires on (100) Si by metal organic chemical vapor deposition

Materials Letters
2012 | Journal article
EID:

2-s2.0-84862806774

Part of ISSN: 0167577X
Contributors: Park, J.; Moon, D.Y.; Kim, M.H.; Park, S.H.; Yoon, E.
Source: Self-asserted source
Sung Hyun Park via Scopus - Elsevier

Growth of GaN layer on patterned Al/Ti metal mask by metal-organic chemical vapor deposition

Japanese Journal of Applied Physics
2012 | Journal article
EID:

2-s2.0-84863162424

Part of ISSN: 00214922 13474065
Contributors: Park, J.; Moon, D.; Park, S.; Park, S.H.; Yoon, E.
Source: Self-asserted source
Sung Hyun Park via Scopus - Elsevier

Growth of less bowed gan epitaxial layers on sapphire substrates by formation of low-temperature gan buffer layer with columnar microstructure

Japanese Journal of Applied Physics
2012 | Journal article
EID:

2-s2.0-84863182730

Part of ISSN: 00214922 13474065
Contributors: Lee, K.-H.; Shin, I.S.; Park, S.H.; Moon, D.Y.; Kim, M.; Park, J.; Nanishi, Y.; Yoon, E.
Source: Self-asserted source
Sung Hyun Park via Scopus - Elsevier

Improved crystal quality of a-plane GaN with high- temperature 3-dimensional GaN buffer layers deposited by using metal-organic chemical vapor deposition

Journal of the Korean Physical Society
2012 | Journal article
EID:

2-s2.0-84879833569

Part of ISSN: 03744884 19768524
Contributors: Park, S.H.; Moon, D.; Kim, B.; Joo, K.; You, D.-J.; Kim, D.-U.; Chang, H.; Jeon, H.; Nanishi, Y.; Yoon, E.
Source: Self-asserted source
Sung Hyun Park via Scopus - Elsevier

Improved emission efficiency of a-plane GaN light emitting diodes with silica nano-spheres integrated into a-plane GaN buffer layer

Applied Physics Letters
2012 | Journal article
EID:

2-s2.0-84862062751

Part of ISSN: 00036951
Contributors: Park, S.H.; Park, J.; You, D.-J.; Joo, K.; Moon, D.; Jang, J.; Kim, D.-U.; Chang, H.; Moon, S.; Song, Y.-K. et al.
Source: Self-asserted source
Sung Hyun Park via Scopus - Elsevier

Effects of a-plane sapphire substrate tilt angles on the growth behavior of nonpolar a-plane GaN

Journal of the Korean Physical Society
2011 | Journal article
EID:

2-s2.0-79955072909

Part of ISSN: 03744884
Contributors: Park, S.H.; Park, J.; Moon, D.; Kim, N.; You, D.-J.; Kim, J.; Kang, J.; Lee, S.-M.; Kim, J.-S.; Yang, M.-S. et al.
Source: Self-asserted source
Sung Hyun Park via Scopus - Elsevier

Catalyst-free growth of vertically aligned ZnO nanostructures arrays on periodically polarity-inverted substrate

Applied Physics Express
2010 | Journal article
EID:

2-s2.0-78149438940

Part of ISSN: 18820778 18820786
Contributors: Park, J.; Kim, K.H.; Park, S.H.; Yoon, E.; Yao, T.
Source: Self-asserted source
Sung Hyun Park via Scopus - Elsevier

MOCVD growth of GaN layer on InN interlayer and relaxation of residual strain

Thin Solid Films
2010 | Journal article
EID:

2-s2.0-77956060848

Part of ISSN: 00406090
Contributors: Lee, K.-H.; Park, S.H.; Kim, J.H.; Kim, N.H.; Kim, M.H.; Na, H.; Yoon, E.
Source: Self-asserted source
Sung Hyun Park via Scopus - Elsevier

Ultraviolet stimulated emission in periodically polarity-inverted ZnO structures at room temperature

Applied Physics Letters
2010 | Journal article
EID:

2-s2.0-78149457200

Part of ISSN: 00036951
Contributors: Park, J.; Goto, T.; Park, S.H.; Ha, J.-S.; Yoon, E.; Yao, T.
Source: Self-asserted source
Sung Hyun Park via Scopus - Elsevier

Microstructural investigation of bilayer growth of In- and Ga-Rich InGaN grown by chemical vapor deposition

Journal of Electronic Materials
2009 | Journal article
EID:

2-s2.0-61849089007

Part of ISSN: 03615235
Contributors: Park, J.; Baik, S.-I.; Ko, D.-S.; Park, S.-H.; Yoon, E.; Kim, Y.-W.
Source: Self-asserted source
Sung Hyun Park via Scopus - Elsevier