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Works (23)

Stabilizing Antiferroelectric‐Like Aluminum‐Doped Hafnium Oxide for Energy Storage Capacitors

Advanced Engineering Materials
2023-10 | Journal article
Contributors: Alison Erlene Viegas; Kati Kuehnel; Clemens Mart; Malte Czernohorsky; Johannes Heitmann
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Evidence for ferroelastic switching and nanoscopic domains in polycrystalline Si-doped hafnium oxide films

Applied Physics Letters
2023-07-10 | Journal article
Contributors: M. Lederer; C. Mart; T. Kämpfe; D. Lehninger; K. Seidel; M. Czernohorsky; W. Weinreich; B. Volkmann; L. M. Eng
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Tunability of Ferroelectric Hafnium Zirconium Oxide for Varactor Applications

IEEE Transactions on Electron Devices
2021-10 | Journal article
Contributors: Sukhrob Abdulazhanov; Maximilian Lederer; David Lehninger; Clemens Mart; Tarek Ali; Defu Wang; Ricardo Olivo; Jennifer Emara; Thomas Kampfe; Gerald Gerlach
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Aging in Ferroelectric Si‐Doped Hafnium Oxide Thin Films

physica status solidi (RRL) – Rapid Research Letters
2021-05 | Journal article
Contributors: Clemens Mart; Nico-Dominik Kohlenbach; Kati Kühnel; Sophia Eßlinger; Malte Czernohorsky; Tarek Ali; Wenke Weinreich; Lukas M. Eng
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Hafnium Zirconium Oxide Thin Films for CMOS Compatible Pyroelectric Infrared Sensors

2021-05-17 | Conference paper
Contributors: Clemens Mart; Malte Czernohorsky; Kati Kühnel; Wenke Weinreich
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Enhanced pyroelectric response at morphotropic and field-induced phase transitions in ferroelectric hafnium oxide thin films

APL Materials
2021-05-01 | Journal article
Contributors: Clemens Mart; Thomas Kämpfe; Kati Kühnel; Malte Czernohorsky; Sabine Kolodinski; Maciej Wiatr; Wenke Weinreich; Lukas M. Eng
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Doping concentration dependent piezoelectric behavior of Si:HfO2 thin-films

Applied Physics Letters
2021-01-04 | Journal article
Contributors: S. Kirbach; M. Lederer; S. Eßlinger; C. Mart; M. Czernohorsky; W. Weinreich; T. Wallmersperger
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Quantifying non-centrosymmetric orthorhombic phase fraction in 10 nm ferroelectric Hf0.5Zr0.5O2 films

Applied Physics Letters
2020-12-28 | Journal article
Contributors: Vineetha Mukundan; Steven Consiglio; Dina H. Triyoso; Kandabara Tapily; Sandra Schujman; Clemens Mart; Thomas Kämpfe; Wenke Weinreich; Jean Jordan-Sweet; Robert D. Clark et al.
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A Study on the Temperature-Dependent Operation of Fluorite-Structure-Based Ferroelectric HfO2 Memory FeFET: A Temperature-Modulated Operation

IEEE Transactions on Electron Devices
2020-07 | Journal article
Contributors: T. Ali; K. Kuhnel; M. Czernohorsky; C. Mart; M. Rudolph; B. Patzold; M. Lederer; R. Olivo; D. Lehninger; F. Muller et al.
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A Study on the Temperature-Dependent Operation of Fluorite-Structure-Based Ferroelectric HfO2 Memory FeFET: Pyroelectricity and Reliability

IEEE Transactions on Electron Devices
2020-07 | Journal article
Contributors: T. Ali; K. Kuhnel; M. Czernohorsky; C. Mart; M. Rudolph; B. Patzold; D. Lehninger; R. Olivo; M. Lederer; F. Muller et al.
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Crossref

The electrocaloric effect in doped hafnium oxide: Comparison of direct and indirect measurements

Applied Physics Letters
2020-07-27 | Journal article
Contributors: C. Mart; T. Kämpfe; M. Czernohorsky; S. Eßlinger; S. Kolodinski; M. Wiatr; W. Weinreich; L. M. Eng
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Piezoelectric Response of Polycrystalline Silicon‐Doped Hafnium Oxide Thin Films Determined by Rapid Temperature Cycles

Advanced Electronic Materials
2020-01-29 | Journal article
Part of ISSN: 2199-160X
Part of ISSN: 2199-160X
Source: Self-asserted source
Clemens Mart

Doping Ferroelectric Hafnium Oxide by in-Situ Precursor Mixing

ACS Applied Electronic Materials
2019-12-24 | Journal article
Contributors: Clemens Mart; Kati Kühnel; Thomas Kämpfe; Malte Czernohorsky; Maciej Wiatr; Sabine Kolodinski; Wenke Weinreich
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Local crystallographic phase detection and texture mapping in ferroelectric Zr doped HfO2 films by transmission-EBSD

Applied Physics Letters
2019-11-25 | Journal article
Contributors: M. Lederer; T. Kämpfe; R. Olivo; D. Lehninger; C. Mart; S. Kirbach; T. Ali; P. Polakowski; L. Roy; K. Seidel
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Crossref

Pyroelectric Energy Conversion in Doped Hafnium Oxide (HfO2) Thin Films on Area‐Enhanced Substrates

Energy Technology
2019-10 | Journal article
Contributors: Brendan Hanrahan; Clemens Mart; Thomas Kämpfe; Malte Czernohorsky; Wenke Weinreich; Andrew Smith
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Crossref

Pyroelectric Energy Conversion in Doped Hafnium Oxide (HfO2) Thin Films on Area‐Enhanced Substrates

Energy Technology
2019-10 | Journal article
Contributors: Brendan Hanrahan; Clemens Mart; Thomas Kämpfe; Malte Czernohorsky; Wenke Weinreich; Andrew Smith
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Crossref

ToF-SIMS 3D Analysis of Thin Films Deposited in High Aspect Ratio Structures via Atomic Layer Deposition and Chemical Vapor Deposition

Nanomaterials
2019-07-19 | Journal article
Contributors: Alireza M. Kia; Nora Haufe; Sajjad Esmaeili; Clemens Mart; Mikko Utriainen; Riikka L. Puurunen; Wenke Weinreich
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Crossref

Ferroelectric and pyroelectric properties of polycrystalline La-doped HfO2 thin films

Applied Physics Letters
2019-03-11 | Journal article
Contributors: C. Mart; K. Kühnel; T. Kämpfe; S. Zybell; W. Weinreich
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Crossref

High-density energy storage in Si-doped hafnium oxide thin films on area-enhanced substrates

Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
2019-03-01 | Journal article
Contributors: Kati Kühnel; Malte Czernohorsky; Clemens Mart; Wenke Weinreich
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Crossref

CMOS Compatible Pyroelectric Applications Enabled by Doped HfO2Films on Deep-Trench Structures

2018 48th European Solid-State Device Research Conference (ESSDERC)
2018 | Conference paper
Source: Self-asserted source
Clemens Mart

Frequency domain analysis of pyroelectric response in silicon-doped hafnium oxide (HfO2) thin films

Applied Physics Letters
2018-09-17 | Journal article
Contributors: C. Mart; M. Czernohorsky; S. Zybell; T. Kämpfe; W. Weinreich
Source: check_circle
Crossref

Layer thickness scaling and wake-up effect of pyroelectric response in Si-doped HfO2

Applied Physics Letters
2018-01 | Journal article
Part of ISSN: 0003-6951
Contributors: C. Mart; T. Kämpfe; S. Zybell; W. Weinreich
Source: Self-asserted source
Clemens Mart via Crossref Metadata Search

Enhanced reliability and capacitance stability of ZrO 2 -based decoupling capacitors by interface doping with Al 2 O 3

Microelectronic Engineering
2017-06 | Journal article
Part of ISSN: 0167-9317
Contributors: C. Mart; S. Zybell; S. Riedel; M. Czernohorsky; K. Seidel; W. Weinreich
Source: Self-asserted source
Clemens Mart via Crossref Metadata Search

Peer review (7 reviews for 7 publications/grants)

Review activity for ACS applied electronic materials. (1)
Review activity for ACS applied materials & interfaces. (1)
Review activity for ACS applied nano materials. (1)
Review activity for Advanced engineering materials (1)
Review activity for Applied physics letters. (1)
Review activity for Journal of applied physics. (1)
Review activity for Physica status solidi. (1)