Personal information

Activities

Employment (1)

ABB Oy Drives and Controls: Helsinki, FI

2012-05-17 to present | Principal Engineer, Power Semiconductors (ABB Motion, Drives)
Employment
Source: Self-asserted source
Joonas Leppänen

Education and qualifications (1)

Aalto University: Espoo, FI

2009-08-31 to 2017-06-12 | M.Sc.(Tech.) (School of Electrical Engineering)
Education
Source: Self-asserted source
Joonas Leppänen

Works (4)

Aluminium corrosion in power semiconductor devices

Microelectronics Reliability
2022-10 | Journal article
Contributors: J. Leppänen; J. Ingman; J.-H. Peters; M. Hanf; R. Ross; G. Koopmans; J. Jormanainen; A. Forsström; G. Ross; N. Kaminski et al.
Source: check_circle
Crossref

A humidity-induced novel failure mechanism in power semiconductor diodes

Microelectronics Reliability
2021 | Journal article
EID:

2-s2.0-85109753234

Part of ISSN: 00262714
Contributors: Leppänen, J.; Ross, G.; Vuorinen, V.; Ingman, J.; Jormanainen, J.; Paulasto-Kröckel, M.
Source: Self-asserted source
Joonas Leppänen via Scopus - Elsevier

Detection of corrosion in thick film resistors by x-ray imaging

IEEE Access
2021 | Journal article
EID:

2-s2.0-85116992697

Part of ISSN: 21693536
Contributors: Ingman, J.M.; Jormanainen, J.P.A.; Jarvinen, S.K.; Kanko, N.I.; Leppanen, J.A.R.; Vulli, A.M.; Karkkainen, T.J.; Rautio, J.; Jappinen, J.; Silventoinen, P.
Source: Self-asserted source
Joonas Leppänen via Scopus - Elsevier

A facility for mixed flowing gas testing of and experimentation with power electronic components and systems

2020 22nd European Conference on Power Electronics and Applications, EPE 2020 ECCE Europe
2020 | Conference paper
EID:

2-s2.0-85094919610

Contributors: Rautio, J.; Jappinen, J.; Karkkainen, T.J.; Niemela, M.; Silventoinen, P.; Kiviniemi, M.; Leppanen, J.; Ingman, J.
Source: Self-asserted source
Joonas Leppänen via Scopus - Elsevier

Peer review (1 review for 1 publication/grant)

Review activity for Journal of materials science. Materials in electronics (1)