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Works (14)

Short-Circuit Performance Analysis of Commercial 1.7 kV SiC MOSFETs Under Varying Electrical Stress

Micromachines
2025-01-16 | Journal article
DOI: 10.3390/mi16010102
Contributors: Shahid Makhdoom; Na Ren; Ce Wang; Yiding Wu; Hongyi Xu; Jiakun Wang; Kuang Sheng
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Crossref
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Modeling of the Influence on Effective VTH From Interface States, Short Channel Effects, and Contact Resistance in SiC MOSFETs

IEEE Transactions on Electron Devices
2024-10 | Journal article
DOI: 10.1109/TED.2024.3440972
Contributors: Junze Li; Qing Guo; Ce Wang; Zijian Hu; Qianhui Wu; Li Liu; Jiangbin Wan; Hongyi Xu; Hengyu Wang; Na Ren et al.
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Crossref

1540 V 21.8mΩ·cm2 4H-SiC lateral MOSFETs with DOUBLE RESURFs for power integration applications

Solid-State Electronics
2024-01 | Journal article
DOI: 10.1016/j.sse.2023.108829
Contributors: Li Liu; Jue Wang; Zhengyun Zhu; Hongyi Xu; Qing Guo; Na Ren; Kuang Sheng
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Crossref

1.2-kV Planar SiC MOSFETs With Improved Short-Circuit Capability by Adding Plasma Spreading Layer

IEEE Transactions on Electron Devices
2023 | Journal article
DOI: 10.1109/TED.2023.3294892
Contributors: Chaobiao Lin; Na Ren; Hongyi Xu; Li Liu; Zhengyun Zhu; Kuang Sheng
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Crossref

Performance and Short-Circuit Reliability of SiC MOSFETs With Enhanced JFET Doping Design

IEEE Transactions on Electron Devices
2023 | Journal article
DOI: 10.1109/TED.2023.3259925
Contributors: Chaobiao Lin; Na Ren; Hongyi Xu; Kuang Sheng
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Crossref

A Novel SiC Trench MOSFET with Self-Aligned N-Type Ion Implantation Technique

Micromachines
2023-12-07 | Journal article
DOI: 10.3390/mi14122212
Contributors: Baozhu Wang; Hongyi Xu; Na Ren; Hengyu Wang; Kai Huang; Kuang Sheng
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Crossref
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Influence of JFET Width on Short-Circuit Robustness of 1200 V SiC Power MOSFETs

Electronics
2023-11-30 | Journal article
DOI: 10.3390/electronics12234849
Contributors: Hongyi Xu; Baozhu Wang; Na Ren; Hu Long; Kai Huang; Kuang Sheng
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The Impact of the Hexagonal and Circular Cell Designs on the Characteristics and Ruggedness for 4H-SiC MPS Diodes

IEEE Transactions on Electron Devices
2022-03 | Journal article
DOI: 10.1109/TED.2022.3146113
Contributors: Li Liu; Jiupeng Wu; Hongyi Xu; Zhengyun Zhu; Na Ren; Qing Guo; Junming Zhang; Kuang Sheng
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Crossref

Investigation of SiC Trench MOSFETs’ Reliability under Short-Circuit Conditions

Materials
2022-01-13 | Journal article
DOI: 10.3390/ma15020598
Contributors: Yuan Zou; Jue Wang; Hongyi Xu; Hengyu Wang
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Methodology for Enhanced Surge Robustness of 1.2kV SiC MOSFET Body Diode

IEEE Journal of Emerging and Selected Topics in Power Electronics
2021 | Journal article
DOI: 10.1109/jestpe.2021.3106742
Part of ISSN: 2168-6777
Part of ISSN: 2168-6785
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Hongyi Xu
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Investigation on Surge Current Capability of 4H-SiC Trench-Gate MOSFETs in Third Quadrant Under Various V GS Biases

IEEE Journal of Emerging and Selected Topics in Power Electronics
2021-10 | Journal article
DOI: 10.1109/JESTPE.2020.3028094
Contributors: Zhengyun Zhu; Hongyi Xu; Li Liu; Na Ren; Kuang Sheng
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Crossref

Characterization and Analysis on Performance and Avalanche Reliability of SiC MOSFETs With Varied JFET Region Width

IEEE Transactions on Electron Devices
2021-08 | Journal article
DOI: 10.1109/TED.2021.3091043
Contributors: Zhengyun Zhu; Na Ren; Hongyi Xu; Li Liu; Kuang Sheng
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Crossref

Single-Mask Implantation-Free Technique Based on Aperture Density Modulation for Termination in High-Voltage SiC Thyristors

IEEE Transactions on Electron Devices
2021-03 | Journal article
DOI: 10.1109/TED.2021.3053187
Contributors: Hu Long; Hongyi Xu; Hengyu Wang; Na Ren; Qing Guo; Kuang Sheng
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Crossref

The Impact of Process Conditions on Surge Current Capability of 1.2 kV SiC JBS and MPS Diodes

Materials
2021-01 | Journal article | Author
DOI: 10.3390/ma14030663
Contributors: Hongyi Xu; Na Ren; Jiupeng Wu; Zhengyun Zhu; Qing Guo; Kuang Sheng
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Multidisciplinary Digital Publishing Institute
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