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Scopus Author ID: 57192167103

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Employment (3)

Westfälische Wilhelms-Universität Münster: Muenster, DE

2022-01-01 to present | Researcher (Material Physics)
Employment
Source: Self-asserted source
Nishant Saxena

Liverpool John Moores University: Liverpool, GB

2021-04-01 to 2021-12-31 | Research Associate (Engineering)
Employment
Source: Self-asserted source
Nishant Saxena

Indian Institute of Technology Madras: Chennai, Tamil Nadu, IN

2020-08-18 to 2021-03-31 | Research Associate (Electrical Engineering)
Employment
Source: Self-asserted source
Nishant Saxena

Education and qualifications (1)

Indian Institute of Technology Indore: Indore, Madhya Pradesh, IN

2014-07 to 2020-05 | PhD (Electrical Engineering)
Education
Source: Self-asserted source
Nishant Saxena

Works (12)

New Insights of the Switching Process in GeAsTe Ovonic Threshold Switching (OTS) Selectors

IEEE Transactions on Electron Devices
2023 | Journal article
DOI: 10.1109/TED.2022.3231233
EID:

2-s2.0-85146216768

Part of ISSN: 15579646 00189383
Contributors: Hu, Z.; Zhang, W.; Degraeve, R.; Garbin, D.; Chai, Z.; Saxena, N.; Freitas, P.; Fantini, A.; Ravsher, T.; Clima, S. et al.
Source: Self-asserted source
Nishant Saxena via Scopus - Elsevier

Ultrafast Threshold Switching Dynamics in Phase-Change Materials

Physica Status Solidi - Rapid Research Letters
2022 | Journal article
DOI: 10.1002/pssr.202200101
EID:

2-s2.0-85128970860

Part of ISSN: 18626270 18626254
Contributors: Saxena, N.; Manivannan, A.
Source: Self-asserted source
Nishant Saxena via Scopus - Elsevier

A scheme for enabling the ultimate speed of threshold switching in phase change memory devices

Scientific Reports
2021 | Journal article
DOI: 10.1038/s41598-021-85690-9
EID:

2-s2.0-85102714599

Part of ISSN: 20452322
Contributors: Saxena, N.; Raghunathan, R.; Manivannan, A.
Source: Self-asserted source
Nishant Saxena via Scopus - Elsevier

Rapid threshold switching dynamics of co-sputtered chalcogenide Ge15Te85 device for selector application

Semiconductor Science and Technology
2021-01-01 | Journal article
DOI: 10.1088/1361-6641/abc390
Contributors: Rathinavelu Sengottaiyan; Nishant Saxena; Krishna Dayal Shukla; Anbarasu Manivannan
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High‐Stability and Low‐Noise Multilevel Switching in In3SbTe2 Material for Phase Change Photonic Memory Applications

physica status solidi (RRL) – Rapid Research Letters
2020-09-10 | Journal article
DOI: 10.1002/pssr.202000354
Source: Self-asserted source
Nishant Saxena
grade
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Sub-nanosecond threshold switching dynamics in GeSb2Te4 phase change memory device

Journal of Physics D: Applied Physics
2020-01-09 | Journal article
DOI: 10.1088/1361-6463/ab4c1b
Contributors: Nishant Saxena; Anbarasu Manivannan
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Temperature dependent structural evolution and crystallization properties of thin Ge15Te85 film revealed by in situ resistance, x-ray diffraction and scanning electron microscopic studies

Journal of Physics D: Applied Physics
2020-01-09 | Journal article
DOI: 10.1088/1361-6463/ab4e6b
Contributors: Rathinavelu Sengottaiyan; Nishant Saxena; Krishna Dayal Shukla; Anbarasu Manivannan
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Exploring ultrafast threshold switching in In3SbTe2 phase change memory devices

Scientific Reports
2019-12-17 | Journal article
DOI: 10.1038/s41598-019-55874-5
Contributors: Nishant Saxena; Christoph Persch; Matthias Wuttig; Anbarasu Manivannan
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Dielectric switching studies of polyvinylidene fluoride thin films with dominant planar ferroelectric domain configuration for flexible electronic devices

IEEE Transactions on Dielectrics and Electrical Insulation
2019-08 | Journal article
DOI: 10.1109/tdei.2019.008101
Source: Self-asserted source
Nishant Saxena
grade
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Threshold switching dynamics of pseudo-binary GeTe–Sb2Te3 phase change memory devices

Journal of Physics D: Applied Physics
2019-06 | Journal article
DOI: 10.1088/1361-6463/ab2ac3
Source: Self-asserted source
Nishant Saxena
grade
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An ultrafast programmable electrical tester for enabling time-resolved, sub-nanosecond switching dynamics and programming of nanoscale memory devices

Review of Scientific Instruments
2017-12 | Journal article
DOI: 10.1063/1.4999522
Source: Self-asserted source
Nishant Saxena
grade
Preferred source (of 2)‎

Redefining the Speed Limit of Phase Change Memory Revealed by Time-resolved Steep Threshold-Switching Dynamics of AgInSbTe Devices

Scientific Reports
2016-12 | Journal article
DOI: 10.1038/srep37868
Source: Self-asserted source
Nishant Saxena
grade
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