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Keywords

Power devices, MOSFETs, Diodes, Gallium Oxide Power Devices, Germanium Tin Transistors and Photodetectors, Tunnling FET

Countries

China

Activities

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Employment (1)

Chinese Academy of Sciences Suzhou Institute of Nano-tech and Nano-Bionics: Suzhou, Jiangsu, CN

2022-03-01 to present | Research Assistant, PostDoctor
Employment
Source: Self-asserted source
Yibo Wang

Education and qualifications (3)

Xidian University: Xian, Shaanxi, CN

2018-09-05 to 2021-12-24 | doctoral (School of Microelectronics)
Education
Source: Self-asserted source
Yibo Wang

Xidian University: Xian, Shaanxi, CN

2015-09-05 to 2018-06-25 | master (School of Microelectronics)
Education
Source: Self-asserted source
Yibo Wang

Chongqing University: Chongqing, Sichuan, CN

2010-09-05 to 2014-06-26 | bachelor's degree (School of Opto-electronic Engineering)
Education
Source: Self-asserted source
Yibo Wang

Works (14)

Demonstration of β-Ga₂O₃ Superjunction-Equivalent MOSFETs

IEEE Transactions on Electron Devices
2022-04 | Journal article
DOI: 10.1109/TED.2022.3152464
Contributors: Yibo Wang; Hehe Gong; Xiaole Jia; Jiandong Ye; Yan Liu; Haodong Hu; Xin Ou; Xiaohua Ma; Rong Zhang; Yue Hao et al.
Source: check_circle
Crossref

Recessed-Gate Ga₂O₃-on-SiC MOSFETs Demonstrating a Stable Power Figure of Merit of 100 mW/cm² Up to 200 °C

IEEE Transactions on Electron Devices
2022-04 | Journal article
DOI: 10.1109/TED.2022.3154340
Contributors: Yibo Wang; Genquan Han; Wenhui Xu; Tiangui You; Haodong Hu; Yan Liu; Xinchuang Zhang; Hao Huang; Xin Ou; Xiaohua Ma et al.
Source: check_circle
Crossref

The role of surface pretreatment by low temperature O2 gas annealing for β -Ga2O3 Schottky barrier diodes

Applied Physics Letters
2022-02-14 | Journal article
DOI: 10.1063/5.0080343
Contributors: Haodong Hu; Ze Feng; Yibo Wang; Yan Liu; Hong Dong; Yue-Yang Liu; Yue Hao; Genquan Han
Source: check_circle
Crossref

Channel Mobility Properties of β-Ga2O3 MOSFETs on Si Substrate Fabricated by Ion-cutting Process

2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
2021-04-08 | Conference paper
DOI: 10.1109/edtm50988.2021.9420854
Source: Self-asserted source
Yibo Wang

Channel Properties of Ga₂O₃-on-SiC MOSFETs

IEEE Transactions on Electron Devices
2021-03 | Journal article
DOI: 10.1109/TED.2021.3051135
Contributors: Yibo Wang; Wenhui Xu; Genquan Han; Tiangui You; Fengwen Mu; Haodong Hu; Yan Liu; Xinchuang Zhang; Hao Huang; Tadatomo Suga et al.
Source: check_circle
Crossref

Temperature-dependent characteristics of Schottky barrier diode on heterogeneous β-Ga2O3($\bar 201$)-Al2O3-Si Substrate

Journal of Physics D: Applied Physics
2021-01-21 | Journal article
DOI: 10.1088/1361-6463/abbeb2
Contributors: Yibo Wang; Wenhui Xu; Genquan Han; Tiangui You; Fengwen Mu; Haodong Hu; Yan Liu; Xinchuang Zhang; Hao Huang; Tadatomo Suga et al.
Source: check_circle
Crossref

β-Ga2O3 MOSFETs on the Si substrate fabricated by the ion-cutting process

Science China Physics, Mechanics & Astronomy
2020-07 | Journal article
DOI: 10.1007/s11433-020-1533-0
Part of ISSN: 1674-7348
Part of ISSN: 1869-1927
Source: Self-asserted source
Yibo Wang

First Demonstration of Waferscale Heterogeneous Integration of Ga2O3 MOSFETs on SiC and Si Substrates by Ion-Cutting Process

2019 IEEE International Electron Devices Meeting (IEDM)
2019-12 | Conference paper
DOI: 10.1109/iedm19573.2019.8993501
Source: Self-asserted source
Yibo Wang

Characterization of crystalline GeSn layer on tensile-strained Ge buffer deposited by magnetron sputtering

Materials Science in Semiconductor Processing
2018-10 | Journal article
DOI: 10.1016/j.mssp.2018.05.013
Part of ISSN: 1369-8001
Source: Self-asserted source
Yibo Wang
grade
Preferred source (of 2)‎

Theoretical investigation of GaAsBi/GaAsN tunneling field-effect transistors with type-II staggered tunneling junction

Superlattices and Microstructures
2017-06 | Journal article
DOI: 10.1016/j.spmi.2017.03.048
Part of ISSN: 0749-6036
Source: Self-asserted source
Yibo Wang

Investigation of GaAsBi/GaAsN Type-II Staggered Heterojunction TFETs with the Analytical Model

IEEE Transactions on Electron Devices
2017-04 | Journal article
DOI: 10.1109/ted.2017.2668063
Part of ISSN: 0018-9383
Part of ISSN: 1557-9646
Source: Self-asserted source
Yibo Wang

Engineering rainbow trapping and releasing in ultrathin THz plasmonic graded metallic grating strip with thermo-optic material

Optics Express
2017-01-23 | Journal article
DOI: 10.1364/oe.25.001278
Part of ISSN: 1094-4087
Source: Self-asserted source
Yibo Wang

GeSn Quantum Well P-Channel Tunneling FETs Fabricated on Si(001) and (111) with Improved Subthreshold Swing

IEEE Electron Device Letters
2016 | Journal article
DOI: 10.1109/led.2016.2558823
Part of ISSN: 0741-3106
Part of ISSN: 1558-0563
Source: Self-asserted source
Yibo Wang

Relaxed germanium-tin P-channel tunneling field-effect transistors fabricated on Si: impacts of Sn composition and uniaxial tensile strain

AIP Advances
2015-05 | Journal article
DOI: 10.1063/1.4921572
Part of ISSN: 2158-3226
Source: Self-asserted source
Yibo Wang
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