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SciProfiles: 4186852

Keywords

Semiconductor Power Device, Reliability

Countries

China

Biography

Jingyu Shen received the M.S. and Ph.D. degree from the University of Electronic Science and Technology of China, Chengdu, China, in 2011 and 2019, respectively. He is currently working at China Resources Microelectronics Chongqing Co., Ltd. His current research interests include power device design, advanced fabrication and reliability evaluation for III-V semiconductor devices.

Activities

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Employment (1)

China Resources Microelectronics Chongqing Co., Ltd.: Chongqing, Chongqing, CN

2021-03-28 to present | Manager
Employment
Source: Self-asserted source
Jingyu Shen

Education and qualifications (1)

University of Electronic Science and Technology of China: Chengdu, Sichuan, CN

2014-09-01 to 2019-06-30 | Ph.D (Microelectronics)
Education
Source: Self-asserted source
Jingyu Shen

Works (4)

Novel Bidirectional ESD Circuit for GaN HEMT

Micromachines
2025-01 | Journal article | Author
DOI: 10.3390/mi16020129
Contributors: Pengfei Zhang; Cheng Yang; Jingyu Shen; Xiaorong Luo; Gaoqiang Deng; Shuxiang Sun; Yuxi Wei; Jie Wei
Source: check_circle
Multidisciplinary Digital Publishing Institute

A Novel Evaluation Methodology for the Reliability and Lifetime of 200mm E-mode GaN-on-Si Power HEMTs

IEEE Transactions on Power Electronics
2023 | Journal article
DOI: 10.1109/tpel.2023.3238119
Part of ISSN: 0885-8993
Part of ISSN: 1941-0107
Contributors: Jingyu Shen; Jingyu Shen; Chao Yang; Liang Jing; Ping li; Hao Wu; Zhi Yong Huang; Shengdong Hu
Source: Self-asserted source
Jingyu Shen

A Novel SiC MOSFET With a Fully Depleted P-Base MOS-Channel Diode for Enhanced Third Quadrant Performance

IEEE Transactions on Electron Devices
2022-08 | Journal article
DOI: 10.1109/ted.2022.3185960
Part of ISSN: 0018-9383
Part of ISSN: 1557-9646
Contributors: Ping li; Rongyao Ma; Jingyu Shen; Jingyu Shen; Liang Jing; Jingwei Guo; Zhi Lin; Shengdong Hu; Cong Shi; Fang Tang
Source: Self-asserted source
Jingyu Shen

Assessment of TID Effect of FRAM Memory Cell Under Electron, X-Ray, and Co- $60~\gamma $ Ray Radiation Sources

IEEE Transactions on Nuclear Science
2017-03 | Journal article | Author
DOI: 10.1109/tns.2017.2655302
Part of ISSN: 0018-9499
Part of ISSN: 1558-1578
Contributors: Jingyu Shen; Wei Li; Yuanbin Zhang
Source: Self-asserted source
Jingyu Shen
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