Personal information

Activities

Employment (2)

University of Manchester: Manchester, GB

2023-10 to present | Technical Specialist (SEM/FIB) (Faculty of Science and Engineering)
Employment
Source: Self-asserted source
Thomas O'Hanlon

University of Plymouth: Plymouth, GB

2019-11 to 2023-10 | Technical Specialist (Electron Microscopy) (Plymouth Electron Microscopy Centre)
Employment
Source: Self-asserted source
Thomas O'Hanlon

Education and qualifications (2)

University of Cambridge: Cambridge, GB

PhD: Development of Multi-Microscopy Techniques for the Characterisation of Nitride Semiconductors (Materials Science & Metallurgy)
Education
Source: Self-asserted source
Thomas O'Hanlon

University of Cambridge: Cambridge, GB

MSci (Materials Science and Metallurgy)
Education
Source: Self-asserted source
Thomas O'Hanlon

Works (10)

Sub-surface Imaging of Porous GaN Distributed Bragg Reflectors via Backscattered Electrons

Microscopy and microanalysis : the official journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada
2024 | Journal article
EID:

2-s2.0-85191899921

Part of ISSN: 14358115
Contributors: Sarkar, M.; Adams, F.; Dar, S.A.; Penn, J.; Ji, Y.; Gundimeda, A.; Zhu, T.; Liu, C.; Hirshy, H.; Massabuau, F.C.P. et al.
Source: Self-asserted source
Thomas O'Hanlon via Scopus - Elsevier

Ni/Au contacts to corundum α-Ga2O3

Japanese Journal of Applied Physics
2023-06-01 | Journal article
Contributors: Fabien C.-P. Massabuau; Francesca Adams; David Nicol; John C. Jarman; Martin Frentrup; Joseph W. Roberts; Thomas J. O’Hanlon; Andras Kovács; Paul R. Chalker; R. A. Oliver
Source: check_circle
Crossref

Directly correlated microscopy of trench defects in InGaN quantum wells

Ultramicroscopy
2021 | Journal article
EID:

2-s2.0-85103029723

Part of ISSN: 18792723 03043991
Contributors: O'Hanlon, T.J.; Massabuau, F.C.-P.; Bao, A.; Kappers, M.J.; Oliver, R.A.
Source: Self-asserted source
Thomas O'Hanlon via Scopus - Elsevier

Dislocations at coalescence boundaries in heteroepitaxial GaN/sapphire studied after the epitaxial layer has completely coalesced

Ultramicroscopy
2021 | Journal article
EID:

2-s2.0-85103702352

Part of ISSN: 18792723 03043991
Contributors: O'Hanlon, T.J.; Zhu, T.; Massabuau, F.C.-P.; Oliver, R.A.
Source: Self-asserted source
Thomas O'Hanlon via Scopus - Elsevier

Cross-shaped markers for the preparation of site-specific transmission electron microscopy lamellae using focused ion beam techniques

Ultramicroscopy
2020 | Journal article
EID:

2-s2.0-85080050065

Part of ISSN: 18792723 03043991
Contributors: O'Hanlon, T.J.; Bao, A.; Massabuau, F.C.-P.; Kappers, M.J.; Oliver, R.A.
Source: Self-asserted source
Thomas O'Hanlon via Scopus - Elsevier

Alloy fluctuations at dislocations in III-nitrides: Identification and impact on optical properties

Proceedings of SPIE - The International Society for Optical Engineering
2018 | Conference paper
EID:

2-s2.0-85047822779

Part of ISSN: 1996756X 0277786X
Contributors: Massabuau, F.C.; Chen, P.; Rhode, S.L.; Horton, M.K.; O'Hanlon, T.J.; Kovács, A.; Zielinski, M.S.; Kappers, M.J.; Dunin-Borkowski, R.E.; Humphreys, C.J. et al.
Source: Self-asserted source
Thomas O'Hanlon via Scopus - Elsevier

Atomic Resolution Imaging of Dislocations in AlGaN and the Efficiency of UV LEDs

Microscopy and Microanalysis
2018-08 | Journal article
Part of ISSN: 1431-9276
Part of ISSN: 1435-8115
Source: Self-asserted source
Thomas O'Hanlon

Carrier localization in the vicinity of dislocations in InGaN

Journal of Applied Physics
2017 | Journal article
EID:

2-s2.0-85008512235

Part of ISSN: 10897550 00218979
Contributors: Massabuau, F.C.-P.; Chen, P.; Horton, M.K.; Rhode, S.L.; Ren, C.X.; O'Hanlon, T.J.; Kovács, A.; Kappers, M.J.; Humphreys, C.J.; Dunin-Borkowski, R.E. et al.
Source: Self-asserted source
Thomas O'Hanlon via Scopus - Elsevier

Dislocations in AlGaN: Core structure, atom segregation, and optical properties

Nano Letters
2017 | Journal article
EID:

2-s2.0-85027230973

Part of ISSN: 15306992 15306984
Contributors: Massabuau, F.C.-P.; Rhode, S.L.; Horton, M.K.; O'Hanlon, T.J.; Kovács, A.; Zielinski, M.S.; Kappers, M.J.; Dunin-Borkowski, R.E.; Humphreys, C.J.; Oliver, R.A.
Source: Self-asserted source
Thomas O'Hanlon via Scopus - Elsevier

Structure and composition of non-polar (11-20) InGaN nanorings grown by modified droplet epitaxy

Physica Status Solidi (B) Basic Research
2016 | Journal article
EID:

2-s2.0-84949936532

Part of ISSN: 15213951 03701972
Contributors: Springbett, H.; Griffiths, J.; Ren, C.; O'Hanlon, T.; Barnard, J.; Sahonta, S.-L.; Zhu, T.; Oliver, R.
Source: Self-asserted source
Thomas O'Hanlon via Scopus - Elsevier