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Scopus Author ID: 57211426832

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Works (26)

Unique Monotonic Positive Shifts in Threshold Voltages of Ga₂O₃-on-SiC MOSFETs Under Both Unipolar Positive and Negative Bias Stresses

IEEE Transactions on Electron Devices
2025-03 | Journal article
DOI: 10.1109/TED.2025.3534742
Contributors: Chenyu Liu; Bochang Li; Yibo Wang; Wenhui Xu; Chunxiao Yu; Haodong Hu; Xiaole Jia; Shuqi Huang; Zeyu Yang; Xiaoxi Li et al.
Source: check_circle
Crossref

Electrothermal Analysis for Layout Design of Hetero-Integrated β-Ga2O3 SBDs on SiC

IEEE Transactions on Electron Devices
2025-02 | Journal article
DOI: 10.1109/TED.2024.3512483
Contributors: Yinfei Xie; Yang He; Zhenghao Shen; Zhenyu Qu; Weiye Liu; Wenhui Xu; Tiangui You; Xin Ou; Huarui Sun
Source: check_circle
Crossref

Extremely Low Thermal Resistance of β-Ga2O3 MOSFETs by Co-integrated Design of Substrate Engineering and Device Packaging

ACS Applied Materials & Interfaces
2024-10-23 | Journal article
DOI: 10.1021/acsami.4c08074
Contributors: Zhenyu Qu; Yinfei Xie; Tiancheng Zhao; Wenhui Xu; Yang He; Yongze Xu; Huarui Sun; Tiangui You; Genquan Han; Yue Hao et al.
Source: check_circle
Crossref

Anomalous dynamic performance in heterogeneous Ga2O3-on-SiC MOSFETs fabricated using ion-implantation cutting process

Physica Scripta
2024-10-01 | Journal article
DOI: 10.1088/1402-4896/ad72a0
Contributors: Chen-Yu Liu; Yi-Bo Wang; Xiao-Le Jia; Wen-Hui Xu; Shu-Qi Huang; Chun-Xiao Yu; Ze-Yu Yang; Xiao-Xi Li; Bo-Chang Li; Zheng-Dong Luo et al.
Source: check_circle
Crossref

Three-dimensional thermal analysis of heterogeneously integrated β-Ga2O3-on-SiC SBDs using Raman thermography and electrothermal modeling

Applied Physics Letters
2024-06-17 | Journal article
DOI: 10.1063/5.0208975
Contributors: Yinfei Xie; Wenhui Xu; Yang He; Zhenghao Shen; Zhenyu Qu; Tiangui You; Xin Ou; Huarui Sun
Source: check_circle
Crossref

Thermal Transport Properties of β-Ga2O3 Thin Films on Si and SiC Substrates Fabricated by an Ion-Cutting Process

ACS Applied Electronic Materials
2024-03-26 | Journal article
DOI: 10.1021/acsaelm.3c01614
Contributors: Wenhui Xu; Tiancheng Zhao; Lianghui Zhang; Kang Liu; Huarui Sun; Zhenyu Qu; Tiangui You; Ailun Yi; Kai Huang; Genquan Han et al.
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Crossref

Current transport mechanism of lateral Schottky barrier diodes on β-Ga2O3/SiC structure with atomic level interface

Applied Physics Letters
2024-03-11 | Journal article
DOI: 10.1063/5.0196517
Contributors: Wenhui Xu; Zhenghao Shen; Zhenyu Qu; Tiancheng Zhao; Ailun Yi; Tiangui You; Genquan Han; Xin Ou
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Effect of Amorphous Layer at the Heterogeneous Interface on the Device Performance of β-Ga2O3/Si Schottky Barrier Diodes

IEEE Journal of the Electron Devices Society
2023 | Journal article
DOI: 10.1109/JEDS.2023.3242968
Contributors: Zhenyu Qu; Wenhui Xu; Tiangui You; Zhenghao Shen; Tiancheng Zhao; Kai Huang; Ailun Yi; David Wei Zhang; Genquan Han; Xin Ou et al.
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Crossref

Unique Bias Stress Instability of Heterogeneous Ga2O3-on-SiC MOSFET

IEEE Electron Device Letters
2023 | Journal article
DOI: 10.1109/LED.2023.3288820
Contributors: Chenyu Liu; Yibo Wang; Wenhui Xu; Xiaole Jia; Shuqi Huang; Yuewen Li; Bochang Li; Zhengdong Luo; Cizhe Fang; Yan Liu et al.
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Crossref

Heterointegrated Ga2O3-on-SiC RF MOSFETs With f T/f max of 47/51 GHz by Ion-Cutting Process

IEEE Electron Device Letters
2023-12 | Journal article
DOI: 10.1109/LED.2023.3327134
Contributors: Xinxin Yu; Wenhui Xu; Yibo Wang; Bing Qiao; Rui Shen; Jianjun Zhou; Zhonghui Li; Tiangui You; Zhenghao Shen; Kai Zhang et al.
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Crossref

High-Voltage β-Ga2O3 RF MOSFETs With a Shallowly-Implanted 2DEG-Like Channel

IEEE Electron Device Letters
2023-07 | Journal article
DOI: 10.1109/LED.2023.3282454
Contributors: Xinxin Yu; Hehe Gong; Jianjun Zhou; Zhenghao Shen; Wenhui Xu; Tiangui You; Jian Wang; Shengnan Zhang; Yingmin Wang; Kai Zhang et al.
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The effect of oxygen annealing on characteristics of β-Ga<inf>2</inf>O<inf>3</inf> solar-blind photodetectors on SiC substrate by ion-cutting process

Journal of Alloys and Compounds
2022 | Journal article
DOI: 10.1016/j.jallcom.2021.161743
EID:

2-s2.0-85114158090

Part of ISSN: 09258388
Contributors: Shen, Z.; Xu, W.; Xu, Y.; Huang, H.; Lin, J.; You, T.; Ye, J.; Ou, X.
Source: Self-asserted source
Wenhui Xu via Scopus - Elsevier

Thermodynamics of Ion-Cutting of β-Ga2O3 and Wafer-Scale Heterogeneous Integration of a β-Ga2O3 Thin Film onto a Highly Thermal Conductive SiC Substrate

ACS Applied Electronic Materials
2022-01-25 | Journal article
DOI: 10.1021/acsaelm.1c01102
Contributors: Wenhui Xu; Tiangui You; Fengwen Mu; Zhenghao Shen; Jiajie Lin; Kai Huang; Min Zhou; Ailun Yi; Zhenyu Qu; Tadatomo Suga et al.
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Crossref

Channel Mobility Properties of β-Ga2O3 MOSFETs on Si Substrate Fabricated by Ion-cutting Process

2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021
2021 | Conference paper
DOI: 10.1109/EDTM50988.2021.9420854
EID:

2-s2.0-85106515622
Contributors: Wang, Y.; Xu, W.; Han, G.; You, T.; Hu, H.; Liu, Y.; Huang, H.; Ou, X.; Ma, X.; Hao, Y.
Source: Self-asserted source
Wenhui Xu via Scopus - Elsevier

Efficient thermal dissipation in wafer-scale heterogeneous integration of single-crystalline β-Ga<inf>2</inf>O<inf>3</inf> thin film on SiC

Fundamental Research
2021 | Journal article
DOI: 10.1016/j.fmre.2021.11.003
EID:

2-s2.0-85119446898

Part of ISSN: 26673258
Contributors: Xu, W.; You, T.; Wang, Y.; Shen, Z.; Liu, K.; Zhang, L.; Sun, H.; Qian, R.; An, Z.; Mu, F. et al.
Source: Self-asserted source
Wenhui Xu via Scopus - Elsevier

Solar-Blind Photodetector Based on Single Crystal Ga<inf>2</inf>O<inf>3</inf>Film Prepared by a Unique Ion-Cutting Process

ACS Applied Electronic Materials
2021 | Journal article
DOI: 10.1021/acsaelm.0c00990
EID:

2-s2.0-85099175162

Part of ISSN: 26376113
Contributors: Ren, Q.; Xu, W.; Shen, Z.; You, T.; Liu, Q.; Liu, C.; Zhao, L.; Chen, L.; Yu, W.
Source: Self-asserted source
Wenhui Xu via Scopus - Elsevier

Temperature-dependent characteristics of Schottky barrier diode on heterogeneous β-Ga<inf>2</inf>O<inf>3</inf>(-)-Al<inf>2</inf>O<inf>3</inf>-Si Substrate

Journal of Physics D: Applied Physics
2021 | Journal article
DOI: 10.1088/1361-6463/abbeb2
EID:

2-s2.0-85096164713

Part of ISSN: 13616463 00223727
Contributors: Wang, Y.; Xu, W.; Han, G.; You, T.; Mu, F.; Hu, H.; Liu, Y.; Zhang, X.; Huang, H.; Suga, T. et al.
Source: Self-asserted source
Wenhui Xu via Scopus - Elsevier

Thermal visualization of buried interfaces by transient and steady-state responses of time-domain thermoreflectance

arXiv
2021 | Other
EID:

2-s2.0-85105719237

Part of ISSN: 23318422
Contributors: Cheng, Z.; Mu, F.; Ji, X.; You, T.; Xu, W.; Suga, T.; Ou, X.; Cahill, D.G.; Graham, S.
Source: Self-asserted source
Wenhui Xu via Scopus - Elsevier

Thermal Visualization of Buried Interfaces Enabled by Ratio Signal and Steady-State Heating of Time-Domain Thermoreflectance

ACS Applied Materials and Interfaces
2021 | Journal article
DOI: 10.1021/acsami.1c06212
EID:

2-s2.0-85110976141

Part of ISSN: 19448252 19448244
Contributors: Cheng, Z.; Mu, F.; Ji, X.; You, T.; Xu, W.; Suga, T.; Ou, X.; Cahill, D.G.; Graham, S.
Source: Self-asserted source
Wenhui Xu via Scopus - Elsevier

Channel Properties of Ga₂O₃-on-SiC MOSFETs

IEEE Transactions on Electron Devices
2021-03 | Journal article
DOI: 10.1109/TED.2021.3051135
Contributors: Yibo Wang; Wenhui Xu; Genquan Han; Tiangui You; Fengwen Mu; Haodong Hu; Yan Liu; Xinchuang Zhang; Hao Huang; Tadatomo Suga et al.
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Crossref
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Realization of wafer-scale single-crystalline GaN film on CMOS-compatible Si(100) substrate by ion-cutting technique

Semiconductor Science and Technology
2020 | Journal article
DOI: 10.1088/1361-6641/abb073
EID:

2-s2.0-85094097907

Part of ISSN: 13616641 02681242
Contributors: Shi, H.; Huang, K.; Mu, F.; You, T.; Ren, Q.; Lin, J.; Xu, W.; Jin, T.; Huang, H.; Yi, A. et al.
Source: Self-asserted source
Wenhui Xu via Scopus - Elsevier

Thermal Transport across Ion-Cut Monocrystalline β-Ga<inf>2</inf>O<inf>3</inf>Thin Films and Bonded β-Ga<inf>2</inf>O<inf>3</inf>-SiC Interfaces

ACS Applied Materials and Interfaces
2020 | Journal article
DOI: 10.1021/acsami.0c11672
EID:

2-s2.0-85092750318

Part of ISSN: 19448252 19448244
Contributors: Cheng, Z.; Mu, F.; You, T.; Xu, W.; Shi, J.; Liao, M.E.; Wang, Y.; Huynh, K.; Suga, T.; Goorsky, M.S. et al.
Source: Self-asserted source
Wenhui Xu via Scopus - Elsevier

Wafer-scale Heterogeneous Integration of Monocrystalline β-Ga2O3 Thin Films on SiC for Thermal Management by Ion-Cutting Technique

arXiv
2020 | Other
EID:

2-s2.0-85095298091

Part of ISSN: 23318422
Contributors: Cheng, Z.; Mu, F.; You, T.; Xu, W.; Shi, J.; Liao, M.E.; Wang, Y.; Huynh, K.; Suga, T.; Goorsky, M.S. et al.
Source: Self-asserted source
Wenhui Xu via Scopus - Elsevier

β-Ga<inf>2</inf>O<inf>3</inf> MOSFETs on the Si substrate fabricated by the ion-cutting process

Science China: Physics, Mechanics and Astronomy
2020 | Journal article
DOI: 10.1007/s11433-020-1533-0
EID:

2-s2.0-85083513369

Part of ISSN: 18691927 16747348
Contributors: Wang, Y.B.; Xu, W.H.; You, T.G.; Mu, F.W.; Hu, H.D.; Liu, Y.; Huang, H.; Suga, T.; Han, G.Q.; Ou, X. et al.
Source: Self-asserted source
Wenhui Xu via Scopus - Elsevier

Comparative study of the ion-slicing mechanism of Y-cut LiNbO<inf>3</inf>

AIP Advances
2019 | Journal article
DOI: 10.1063/1.5112792
EID:

2-s2.0-85073888985

Part of ISSN: 21583226
Contributors: Huang, K.; Li, Z.; Yan, Y.; Zhao, X.; Li, W.; You, T.; Zhang, S.; Zhou, H.; Lin, J.; Xu, W. et al.
Source: Self-asserted source
Wenhui Xu via Scopus - Elsevier

First Demonstration of Waferscale Heterogeneous Integration of Ga<inf>2</inf>O<inf>3</inf> MOSFETs on SiC and Si Substrates by Ion-Cutting Process

Technical Digest - International Electron Devices Meeting, IEDM
2019 | Conference paper
DOI: 10.1109/IEDM19573.2019.8993501
EID:

2-s2.0-85081063033

Part of ISSN: 01631918
Contributors: Xu, W.; Wang, X.; Wang, Y.; You, T.; Ou, X.; Han, G.; Hu, H.; Zhang, S.; Mu, F.; Suga, T. et al.
Source: Self-asserted source
Wenhui Xu via Scopus - Elsevier
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