Personal information

III-V Semiconductor, InAs QDs, NextNano, Characterization, Matlab
India

Activities

Employment (1)

Wipro Technologies: Pune, Maharashtra, IN

2013 to 2016 | Project Engineer (Networking)
Employment
Source: Self-asserted source
Ravindra Kumar

Education and qualifications (4)

Indian Institute of Technology Bombay: Mumbai, Maharashtra, IN

2018-07-12 to 2023-04-18 | PhD (Electrical Engineering)
Education
Source: Self-asserted source
Ravindra Kumar

National Institute of Technology Delhi: Delhi, Delhi, IN

2016 to 2018 | Master of Technology (Electronics and Communication Engineering)
Education
Source: Self-asserted source
Ravindra Kumar

Cochin University of Science and Technology: Kochi, Kerala, IN

2009 to 2012 | Bachelor of Technology (Electronics and Communication Engineering)
Education
Source: Self-asserted source
Ravindra Kumar

Government Polytechnic Darbhanga: Darbhanga, Bihar, IN

2005 to 2008 | Diploma (Electronics and Telecommunication Engineering)
Education
Source: Self-asserted source
Ravindra Kumar

Professional activities (1)

SPIE: SPIE IITB STUDENT CHAPTER, Maharashtra, IN

Annual (Electrical Engineering)
Membership
Source: Self-asserted source
Ravindra Kumar

Works (10)

Theoretical Study on Vertically Coupled Stranski-Krastanov (SK) on Sub Monolayer (SML) InAs Quantum Dot Heterostructures Employing Ternary and Quaternary Barrier Materials

IEEE Transactions on Nanotechnology
2023 | Journal article
Contributors: Ravindra Kumar; Samishta Choudhary; Jhuma Saha; Subhananda Chakrabarti
Source: check_circle
Crossref

InAs quantum dot-in-a-well heterostructures with InGaAs, GaAsN and GaAsSb well using digital alloy capping layer

Current Applied Physics
2023-03 | Journal article
Part of ISSN: 1567-1739
Contributors: Ravindra Kumar; Jhuma Saha; Binita Tongbram; DEBI PRASAD PANDA; Raveesh Gourishetty; Dr. Ravinder Kumar; Sanowar Alam Gazi; Subhananda Chakrabarti
Source: Self-asserted source
Ravindra Kumar

Novel approach for augmented carrier transfer and reduced Fermi level pinning effect in InAs surface quantum dots

Applied Surface Science
2023-01 | Journal article
Part of ISSN: 0169-4332
Contributors: Debiprasad Panda; Manas Ranjan Mantri; Ravindra Kumar; Debabrata Das; Rajib Saha; Subhananda Chakrabarti
Source: Self-asserted source
Ravindra Kumar

Strain Minimization of InAs QDs Heterostructures Using Dual Quaternary-Ternary/Ternary-Quaternary Capping Materials via Digital Alloy Capping Layer Approach

IEEE Transactions on Nanotechnology
2022 | Journal article
Part of ISSN: 1536-125X
Part of ISSN: 1941-0085
Contributors: Ravindra Kumar; Jhuma Saha; subhananda chakrabarti
Source: Self-asserted source
Ravindra Kumar

The role and growth of strain – reducing layer by molecular -beam epitaxy in a multi – stack InAs/(In,Ga)As sub - monolayer quantum dot heterostructure

Optical Materials
2021-04 | Journal article
Part of ISSN: 0925-3467
Contributors: Saranya Reddy Shriram; Debiprasad Panda; Ravindra Kumar; Jhuma Saha; Binita Tongbram; Manas Ranjan Mantri; Sanowar Alam Gazi; Arjun Mandal; Subhananda Chakrabarti
Source: Self-asserted source
Ravindra Kumar

Impact of Digital Alloy Capping Layers on Bilayer InAs Quantum Dot Heterostructures

IEEE Transactions on Nanotechnology
2020 | Journal article
Part of ISSN: 1536-125X
Part of ISSN: 1941-0085
Contributors: Ravindra Kumar; Jhuma Saha; subhananda chakrabarti
Source: Self-asserted source
Ravindra Kumar

Study on Inter Band and Inter Sub-Band Optical Transitions With Varying InAs/InGaAs Sub-Monolayer Quantum Dot Heterostructure Stacks Grown by Molecular Beam Epitaxy

IEEE Transactions on Nanotechnology
2020 | Journal article
Part of ISSN: 1536-125X
Part of ISSN: 1941-0085
Contributors: Saranya Reddy Shriram; Ravindra Kumar; DEBI PRASAD PANDA; Jhuma Saha; Binita Tongbram; Manas Ranjan Mantri; Sanowar Alam Gazi; Arjun Mandal; subhananda chakrabarti
Source: Self-asserted source
Ravindra Kumar

Ameliorating the optical and structural properties of InAs quantum dot heterostructures through digital alloy capping materials: Theory and experiment

Optical Materials
2020-10 | Journal article
Part of ISSN: 0925-3467
Contributors: Ravindra Kumar; Jhuma Saha; Debiprasad Panda; Ravinder Kumar; Sanowar Alam Gazi; Raveesh Gourishetty; Subhananda Chakrabarti
Source: Self-asserted source
Ravindra Kumar

Performance analysis of dynamic CMOS circuit based on node‐discharger and twist‐connected transistors

IET Computers & Digital Techniques
2020-05 | Journal article
Part of ISSN: 1751-8601
Part of ISSN: 1751-861X
Contributors: Dhandapani Vaithiyanathan; Ravindra Kumar; Ashima Rai; Khushboo Sharma
Source: Self-asserted source
Ravindra Kumar

In-Situ Tailoring of Vertically Coupled InAs p-i-p Quantum-Dot Infrared Photodetectors: Toward Homogeneous Dot Size Distribution and Minimization of In–Ga Intermixing

ACS Applied Electronic Materials
2020-05-26 | Journal article
Part of ISSN: 2637-6113
Part of ISSN: 2637-6113
Contributors: Suryansh Dongre; Sritoma Paul; Shubham Mondal; Ravindra Kumar; Debiprasad Panda; Sanowar Alam Gazi; Debabrata Das; Ravinder Kumar; Saranya Reddy Shriram; Manas Ranjan Mantri et al.
Source: Self-asserted source
Ravindra Kumar