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Fraunhofer HHI, Photonic Components Terahertz, MBE

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Works (49)

Continuous wave terahertz receivers with 4.5 THz bandwidth and 112 dB dynamic range

Optics Express
2021 | Journal article
DOI: 10.1364/OE.443098
EID:

2-s2.0-85120867216

Part of ISSN: 10944087
Contributors: Deumer, M.; Breuer, S.; Kohlhaas, R.; Nellen, S.; Liebermeister, L.; Lauck, S.; Schell, M.; Globisch, B.
Source: Self-asserted source
Steffen Breuer via Scopus - Elsevier

Fiber Coupled THz Time-Domain Spectrometer with 10 THz Bandwidth

International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
2021 | Conference paper
DOI: 10.1109/IRMMW-THz50926.2021.9567293
EID:

2-s2.0-85125354702

Part of ISSN: 21622035 21622027
Contributors: Kohlhaas, R.B.; Breuer, S.; Mutschall, S.; Kehrt, M.; Nellen, S.; Liebermeister, L.; Schell, M.; Globisch, B.
Source: Self-asserted source
Steffen Breuer via Scopus - Elsevier

Optoelectronic frequency-modulated continuous-wave terahertz spectroscopy with 4 THz bandwidth

Nature Communications
2021 | Journal article
DOI: 10.1038/s41467-021-21260-x
EID:

2-s2.0-85100938855

Part of ISSN: 20411723
Contributors: Liebermeister, L.; Nellen, S.; Kohlhaas, R.B.; Lauck, S.; Deumer, M.; Breuer, S.; Schell, M.; Globisch, B.
Source: Self-asserted source
Steffen Breuer via Scopus - Elsevier

Photoconductive THz detectors based on iron doped InGaAs with 4.5 THz bandwidth

International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
2021 | Conference paper
DOI: 10.1109/IRMMW-THz50926.2021.9567618
EID:

2-s2.0-85125292952

Part of ISSN: 21622035 21622027
Contributors: Deumer, M.; Kohlhaas, R.B.; Breuer, S.; Nellen, S.; Schwenson, L.; Liebermeister, L.; Lauck, S.; Schell, M.; Globisch, B.
Source: Self-asserted source
Steffen Breuer via Scopus - Elsevier

Terahertz Multilayer Thickness Measurements: Comparison of Optoelectronic Time and Frequency Domain Systems

Journal of Infrared, Millimeter, and Terahertz Waves
2021 | Journal article
DOI: 10.1007/s10762-021-00831-5
EID:

2-s2.0-85120790001

Part of ISSN: 18666906 18666892
Contributors: Liebermeister, L.; Nellen, S.; Kohlhaas, R.B.; Lauck, S.; Deumer, M.; Breuer, S.; Schell, M.; Globisch, B.
Source: Self-asserted source
Steffen Breuer via Scopus - Elsevier

637 μ W emitted terahertz power from photoconductive antennas based on rhodium doped InGaAs

Applied Physics Letters
2020 | Journal article
DOI: 10.1063/5.0020766
EID:

2-s2.0-85092583359

Part of ISSN: 00036951
Contributors: Kohlhaas, R.B.; Breuer, S.; Liebermeister, L.; Nellen, S.; Deumer, M.; Schell, M.; Semtsiv, M.P.; Masselink, W.T.; Globisch, B.
Source: Self-asserted source
Steffen Breuer via Scopus - Elsevier

Comparison of Optoelectronic Time- And Frequency-Domain Systems for Single- And Multilayer Thickness Measurements

International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
2020 | Conference paper
DOI: 10.1109/IRMMW-THz46771.2020.9370519
EID:

2-s2.0-85103178735

Part of ISSN: 21622035 21622027
Contributors: Liebermeister, L.; Nellen, S.; Kohlhaas, R.B.; Lauck, S.; Deumer, M.; Breuer, S.; Globisch, B.
Source: Self-asserted source
Steffen Breuer via Scopus - Elsevier

Fiber coupled transceiver with 6.5 thz bandwidth for terahertz time-domain spectroscopy in reflection geometry

Sensors (Switzerland)
2020 | Journal article
DOI: 10.3390/s20092616
EID:

2-s2.0-85084383499

Part of ISSN: 14248220
Contributors: Kohlhaas, R.B.; Liebermeister, L.; Breuer, S.; Amberg, M.; de Felipe, D.; Nellen, S.; Schell, M.; Globisch, B.
Source: Self-asserted source
Steffen Breuer via Scopus - Elsevier

Terahertz time-domain spectroscopy system using rhodium doped InGaAs antennas: 637 μw peak power and 110 dB dynamic range

International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
2020 | Conference paper
DOI: 10.1109/IRMMW-THz46771.2020.9370673
EID:

2-s2.0-85103156864

Part of ISSN: 21622035 21622027
Contributors: Kohlhaas, R.B.; Breuer, S.; Nellen, S.; Liebermeister, L.; Schell, M.; Semtsiv, M.P.; Masselink, W.T.; Globisch, B.
Source: Self-asserted source
Steffen Breuer via Scopus - Elsevier

Direct Comparison of PIN and UTC Photodiodes for Continuous-Wave Terahertz Emission

International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
2019 | Conference paper
DOI: 10.1109/IRMMW-THz.2019.8874180
EID:

2-s2.0-85074709143

Part of ISSN: 21622035 21622027
Contributors: Nellen, S.; Ishibashi, T.; Schwenson, L.M.; Kohlhaas, R.B.; Liebermeister, L.; Breuer, S.; Deninger, A.; Schell, M.; Globisch, B.
Source: Self-asserted source
Steffen Breuer via Scopus - Elsevier

Direct Comparison of PIN and UTC Photodiodes for Continuous-Wave Terahertz Emission

International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
2019 | Conference paper
DOI: 10.1109/IRMMW-THz.2019.8873981
EID:

2-s2.0-85074706203

Part of ISSN: 21622035 21622027
Contributors: Nellen, S.; Ishibashi, T.; Schwenson, L.M.; Kohlhaas, R.B.; Liebermeister, L.; Breuer, S.; Deninger, A.; Schell, M.; Globisch, B.
Source: Self-asserted source
Steffen Breuer via Scopus - Elsevier

How to spare the phase modulator in fast-sweeping coherent cw THz systems

International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
2019 | Conference paper
DOI: 10.1109/IRMMW-THz.2019.8874173
EID:

2-s2.0-85074728970

Part of ISSN: 21622035 21622027
Contributors: Liebermeister, L.; Nellen, S.; Kohlhaas, R.B.; Breuer, S.; Schell, M.; Globisch, B.
Source: Self-asserted source
Steffen Breuer via Scopus - Elsevier

Photoconductive terahertz detectors with 105 dB peak dynamic range made of rhodium doped InGaAs

Applied Physics Letters
2019 | Journal article
DOI: 10.1063/1.5095714
EID:

2-s2.0-85066840206

Part of ISSN: 00036951
Contributors: Kohlhaas, R.B.; Breuer, S.; Nellen, S.; Liebermeister, L.; Schell, M.; Semtsiv, M.P.; Masselink, W.T.; Globisch, B.
Source: Self-asserted source
Steffen Breuer via Scopus - Elsevier

THz TDS system with 105 dB dynamic range based on transition metal doped InGaAs

International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
2019 | Conference paper
DOI: 10.1109/IRMMW-THz.2019.8873904
EID:

2-s2.0-85074715959

Part of ISSN: 21622035 21622027
Contributors: Kohlhaas, R.B.; Breuer, S.; Nellen, S.; Liebermeister, L.; Schell, M.; Semtsiv, M.P.; Masselink, W.T.; Globisch, B.
Source: Self-asserted source
Steffen Breuer via Scopus - Elsevier

Ultra-fast, High-Bandwidth Coherent cw THz Spectrometer for Non-destructive Testing

Journal of Infrared, Millimeter, and Terahertz Waves
2019 | Journal article
DOI: 10.1007/s10762-018-0563-6
EID:

2-s2.0-85059867963

Part of ISSN: 18666906 18666892
Contributors: Liebermeister, L.; Nellen, S.; Kohlhaas, R.; Breuer, S.; Schell, M.; Globisch, B.
Source: Self-asserted source
Steffen Breuer via Scopus - Elsevier

Cathodoluminescence spectroscopy for failure analysis and process development of GaN-based microelectronic devices

IEEE International Reliability Physics Symposium Proceedings
2018 | Conference paper
DOI: 10.1109/IRPS.2018.8353623
EID:

2-s2.0-85046946422

Part of ISSN: 15417026
Contributors: Monachon, C.; Zielinski, M.S.; Berney, J.; Poppitz, D.; Graff, A.; Breuer, S.; Kirste, L.
Source: Self-asserted source
Steffen Breuer via Scopus - Elsevier

Continuous Wave Terahertz Generation from Photodiode-Based Emitters with up to 200 μ W Terahertz Power

International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
2018 | Conference paper
DOI: 10.1109/IRMMW-THz.2018.8509858
EID:

2-s2.0-85056885273

Part of ISSN: 21622035 21622027
Contributors: Nellen, S.; Kohlhaas, R.; Liebermeister, L.; Breuer, S.; Globisch, B.; Schell, M.
Source: Self-asserted source
Steffen Breuer via Scopus - Elsevier

Electronic properties of wurtzite GaAs: A correlated structural, optical, and theoretical analysis of the same polytypic GaAs nanowire

Nano Research
2018 | Journal article
DOI: 10.1007/s12274-018-2053-5
EID:

2-s2.0-85046033162

Part of ISSN: 19980000 19980124
Contributors: Senichev, A.; Corfdir, P.; Brandt, O.; Ramsteiner, M.; Breuer, S.; Schilling, J.; Geelhaar, L.; Werner, P.
Source: Self-asserted source
Steffen Breuer via Scopus - Elsevier

High-Power Microwave GaN/AlGaN HEMTs and MMICs on SiC and Silicon Substrates for Modern Radio Communication

Physica Status Solidi (A) Applications and Materials Science
2018 | Journal article
DOI: 10.1002/pssa.201700655
EID:

2-s2.0-85046672283

Part of ISSN: 18626319 18626300
Contributors: Quay, R.; Schwantuschke, D.; Ture, E.; van Raay, F.; Friesicke, C.; Krause, S.; Müller, S.; Breuer, S.; Godejohann, B.; Brückner, P.
Source: Self-asserted source
Steffen Breuer via Scopus - Elsevier

Improving the dynamic range of InGaAs-based THz detectors by localized beryllium doping: Up to 70 dB at 3 THz

Optics Letters
2018 | Journal article
DOI: 10.1364/OL.43.005423
EID:

2-s2.0-85055797201

Part of ISSN: 15394794 01469592
Contributors: Kohlhaas, R.B.; Dietz, R.J.B.; Breuer, S.; Nellen, S.; Liebermeister, L.; Schell, M.; Globisch, B.
Source: Self-asserted source
Steffen Breuer via Scopus - Elsevier

Terahertz Receivers for Time-Domain Spectroscopy Made of Transition Metal Doped InGaAs: Up to 105 dB Dynamic Range

International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
2018 | Conference paper
DOI: 10.1109/IRMMW-THz.2018.8509986
EID:

2-s2.0-85056829880

Part of ISSN: 21622035 21622027
Contributors: Kohlhaas, R.B.; Globisch, B.; Breuer, S.; Nellen, S.; Liebermeister, L.; Schell, M.; Richter, P.; Koch, M.; Semtsiv, M.P.; Masselink, W.T.
Source: Self-asserted source
Steffen Breuer via Scopus - Elsevier

AlN/GaN HEMTs grown by MBE and MOCVD: Impact of Al distribution

Physica Status Solidi (B) Basic Research
2017 | Journal article
DOI: 10.1002/pssb.201600715
EID:

2-s2.0-85021740244

Part of ISSN: 15213951 03701972
Contributors: Godejohann, B.-J.; Ture, E.; Müller, S.; Prescher, M.; Kirste, L.; Aidam, R.; Polyakov, V.; Brückner, P.; Breuer, S.; Köhler, K. et al.
Source: Self-asserted source
Steffen Breuer via Scopus - Elsevier

Broadband E-Band Power Amplifier MMIC Based on an AlGaN/GaN HEMT Technology with 30 dBm Output Power

Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC
2016 | Conference paper
DOI: 10.1109/CSICS.2016.7751030
EID:

2-s2.0-85006074228

Part of ISSN: 15508781
Contributors: Schwantuschke, D.; Godejohann, B.-J.; Breuer, S.; Bruckner, P.; Mikulla, M.; Quay, R.; Ambacher, O.
Source: Self-asserted source
Steffen Breuer via Scopus - Elsevier

Spatially resolved study of polarized micro-photoluminescence spectroscopy on single GaAs nanowires with mixed zincblende and wurtzite phases

Journal of Applied Physics
2015 | Journal article
DOI: 10.1063/1.4907388
EID:

2-s2.0-84923668415

Part of ISSN: 10897550 00218979
Contributors: Mukherjee, A.; Ghosh, S.; Breuer, S.; Jahn, U.; Geelhaar, L.; Grahn, H.T.
Source: Self-asserted source
Steffen Breuer via Scopus - Elsevier

Vertical buffer leakage and temperature effects on the breakdown performance of GaN/AlGaN HEMTs on Si substrate

ECS Transactions
2015 | Conference paper
DOI: 10.1149/06911.0065ecst
EID:

2-s2.0-84945977441

Part of ISSN: 19385862 19386737
Contributors: Benkhelifa, F.; Müller, S.; Polyakov, V.M.; Breuer, S.; Czap, H.; Manz, C.; Mikulla, M.; Ambacher, O.
Source: Self-asserted source
Steffen Breuer via Scopus - Elsevier

Distribution of zinc-blende twins and wurtzite segments in GaAs nanowires probed by X-ray nanodiffraction

Physica Status Solidi - Rapid Research Letters
2013 | Journal article
DOI: 10.1002/pssr.201307246
EID:

2-s2.0-84885837110

Part of ISSN: 18626254 18626270
Contributors: Biermanns, A.; Carbone, D.; Breuer, S.; Jacques, V.L.R.; Schulli, T.; Geelhaar, L.; Pietsch, U.
Source: Self-asserted source
Steffen Breuer via Scopus - Elsevier

Droplet bulge effect on the formation of nanowire side facets

Crystal Growth and Design
2013 | Journal article
DOI: 10.1021/cg301770f
EID:

2-s2.0-84879869619

Part of ISSN: 15287483 15287505
Contributors: Breuer, S.; Feiner, L.-F.; Geelhaar, L.
Source: Self-asserted source
Steffen Breuer via Scopus - Elsevier

Enhanced minority carrier lifetimes in GaAs/AlGaAs core-shell nanowires through shell growth optimization

Nano Letters
2013 | Journal article
DOI: 10.1021/nl4023385
EID:

2-s2.0-84887834967

Part of ISSN: 15306984 15306992
Contributors: Jiang, N.; Gao, Q.; Parkinson, P.; Wong-Leung, J.; Mokkapati, S.; Breuer, S.; Tan, H.H.; Zheng, C.L.; Etheridge, J.; Jagadish, C.
Source: Self-asserted source
Steffen Breuer via Scopus - Elsevier

Quenching of the E<sub>2</sub> phonon line in the Raman spectra of wurtzite GaAs nanowires caused by the dielectric polarization contrast

Applied Physics Letters
2013 | Journal article
DOI: 10.1063/1.4817078
EID:

2-s2.0-84884997559

Part of ISSN: 00036951
Contributors: Ramsteiner, M.; Brandt, O.; Kusch, P.; Breuer, S.; Reich, S.; Geelhaar, L.
Source: Self-asserted source
Steffen Breuer via Scopus - Elsevier

Three-dimensional in situ photocurrent mapping for nanowire photovoltaics

Nano Letters
2013 | Journal article
DOI: 10.1021/nl304170q
EID:

2-s2.0-84876014085

Part of ISSN: 15306984 15306992
Contributors: Parkinson, P.; Lee, Y.-H.; Fu, L.; Breuer, S.; Tan, H.H.; Jagadish, C.
Source: Self-asserted source
Steffen Breuer via Scopus - Elsevier

Twinning superlattice formation in GaAs nanowires

ACS Nano
2013 | Journal article
DOI: 10.1021/nn403390t
EID:

2-s2.0-84884938532

Part of ISSN: 19360851 1936086X
Contributors: Burgess, T.; Breuer, S.; Caroff, P.; Wong-Leung, J.; Gao, Q.; Hoe Tan, H.; Jagadish, C.
Source: Self-asserted source
Steffen Breuer via Scopus - Elsevier

Acoustically driven photon antibunching in nanowires

Nano Letters
2012 | Journal article
DOI: 10.1021/nl203461m
EID:

2-s2.0-84855775060

Part of ISSN: 15306984 15306992
Contributors: Hernández-Mínguez, A.; Möller, M.; Breuer, S.; Pfüller, C.; Somaschini, C.; Lazić, S.; Brandt, O.; García-Cristóbal, A.; De Lima, M.M.; Cantarero, A. et al.
Source: Self-asserted source
Steffen Breuer via Scopus - Elsevier

Band gap of wurtzite GaAs: A resonant Raman study

Physical Review B - Condensed Matter and Materials Physics
2012 | Journal article
DOI: 10.1103/PhysRevB.86.075317
EID:

2-s2.0-84865687532

Part of ISSN: 10980121 1550235X
Contributors: Kusch, P.; Breuer, S.; Ramsteiner, M.; Geelhaar, L.; Riechert, H.; Reich, S.
Source: Self-asserted source
Steffen Breuer via Scopus - Elsevier

Carrier transport in GaAs nanowires using surface acoustic waves

Materials Research Society Symposium Proceedings
2012 | Conference paper
DOI: 10.1557/opl.2012.36
EID:

2-s2.0-84864965199

Part of ISSN: 02729172
Contributors: Hernández-Mínguez, A.; Möller, M.; Pfüller, C.; Breuer, S.; Brandt, O.; De Lima Jr., M.M.; García-Cristóbal, A.; Cantarero, A.; Geelhaar, L.; Riechert, H. et al.
Source: Self-asserted source
Steffen Breuer via Scopus - Elsevier

Lattice parameter accommodation between GaAs(111) nanowires and Si(111) substrate after growth via au-assisted molecular beam epitaxy

Nanoscale Research Letters
2012 | Journal article
DOI: 10.1186/1556-276X-7-109
EID:

2-s2.0-84857750926

Part of ISSN: 1556276X 19317573
Contributors: Davydok, A.; Breuer, S.; Biermanns, A.; Geelhaar, L.; Pietsch, U.
Source: Self-asserted source
Steffen Breuer via Scopus - Elsevier

Long minority carrier lifetime in Au-catalyzed GaAs/Al <sub>x</sub>Ga <sub>1-x</sub>As core-shell nanowires

Applied Physics Letters
2012 | Journal article
DOI: 10.1063/1.4735002
EID:

2-s2.0-84863900197

Part of ISSN: 00036951
Contributors: Jiang, N.; Parkinson, P.; Gao, Q.; Breuer, S.; Tan, H.H.; Wong-Leung, J.; Jagadish, C.
Source: Self-asserted source
Steffen Breuer via Scopus - Elsevier

Luminescence of GaAs nanowires consisting of wurtzite and zinc-blende segments

Physical Review B - Condensed Matter and Materials Physics
2012 | Journal article
DOI: 10.1103/PhysRevB.85.045323
EID:

2-s2.0-84856419053

Part of ISSN: 10980121 1550235X
Contributors: Jahn, U.; Lähnemann, J.; Pfüller, C.; Brandt, O.; Breuer, S.; Jenichen, B.; Ramsteiner, M.; Geelhaar, L.; Riechert, H.
Source: Self-asserted source
Steffen Breuer via Scopus - Elsevier

Polarized recombination of acoustically transported carriers in GaAs nanowires

Nanoscale Research Letters
2012 | Journal article
DOI: 10.1186/1556-276X-7-1
EID:

2-s2.0-84863999185

Part of ISSN: 1556276X 19317573
Contributors: Möller, M.; Hernández-Mínguez, A.; Breuer, S.; Pfüller, C.; Brandt, O.; de Lima Jr., M.M.; Cantarero, A.; Geelhaar, L.; Riechert, H.; Santos, P.V.
Source: Self-asserted source
Steffen Breuer via Scopus - Elsevier

Strain accommodation in Ga-assisted GaAs nanowires grown on silicon (111)

Nanotechnology
2012 | Journal article
DOI: 10.1088/0957-4484/23/30/305703
EID:

2-s2.0-84863762577

Part of ISSN: 09574484 13616528
Contributors: Biermanns, A.; Breuer, S.; Trampert, A.; Davydok, A.; Geelhaar, L.; Pietsch, U.
Source: Self-asserted source
Steffen Breuer via Scopus - Elsevier

Structural polytypism and residual strain in GaAs nanowires grown on Si(111) probed by single-nanowire X-ray diffraction

Journal of Applied Crystallography
2012 | Journal article
DOI: 10.1107/S0021889812003007
EID:

2-s2.0-84859773792

Part of ISSN: 00218898 16005767
Contributors: Biermanns, A.; Breuer, S.; Davydok, A.; Geelhaar, L.; Pietsch, U.
Source: Self-asserted source
Steffen Breuer via Scopus - Elsevier

Nucleation and growth of Au-assisted GaAs nanowires on GaAs(1 1 1)B and Si(1 1 1) in comparison

Journal of Crystal Growth
2011 | Journal article
DOI: 10.1016/j.jcrysgro.2010.11.071
EID:

2-s2.0-79958008717

Part of ISSN: 00220248
Contributors: Breuer, S.; Hilse, M.; Geelhaar, L.; Riechert, H.
Source: Self-asserted source
Steffen Breuer via Scopus - Elsevier

Self-assisted nucleation and vapor-solid growth of InAs nanowires on bare Si(111)

Crystal Growth and Design
2011 | Journal article
DOI: 10.1021/cg200568m
EID:

2-s2.0-80052526876

Part of ISSN: 15287483 15287505
Contributors: Dimakis, E.; Lähnemann, J.; Jahn, U.; Breuer, S.; Hilse, M.; Geelhaar, L.; Riechert, H.
Source: Self-asserted source
Steffen Breuer via Scopus - Elsevier

Strain in GaAs-MnAs core-shell nanowires grown by molecular beam epitaxy

Journal of Crystal Growth
2011 | Journal article
DOI: 10.1016/j.jcrysgro.2010.10.126
EID:

2-s2.0-79958018942

Part of ISSN: 00220248
Contributors: Hilse, M.; Takagaki, Y.; Ramsteiner, M.; Herfort, J.; Breuer, S.; Geelhaar, L.; Riechert, H.
Source: Self-asserted source
Steffen Breuer via Scopus - Elsevier

Structural evolution of self-assisted GaAs nanowires grown on Si(111)

Physica Status Solidi - Rapid Research Letters
2011 | Journal article
DOI: 10.1002/pssr.201105055
EID:

2-s2.0-79954544091

Part of ISSN: 18626254 18626270
Contributors: Biermanns, A.; Breuer, S.; Davydok, A.; Geelhaar, L.; Pietsch, U.
Source: Self-asserted source
Steffen Breuer via Scopus - Elsevier

Suitability of Au- and self-assisted GaAs nanowires for optoelectronic applications

Nano Letters
2011 | Journal article
DOI: 10.1021/nl104316t
EID:

2-s2.0-79952601289

Part of ISSN: 15306984 15306992
Contributors: Breuer, S.; Pfüller, C.; Flissikowski, T.; Brandt, O.; Grahn, H.T.; Geelhaar, L.; Riechert, H.
Source: Self-asserted source
Steffen Breuer via Scopus - Elsevier

Incorporation of the dopants Si and Be into GaAs nanowires

Applied Physics Letters
2010 | Journal article
DOI: 10.1063/1.3428358
EID:

2-s2.0-77952970922

Part of ISSN: 00036951
Contributors: Hilse, M.; Ramsteiner, M.; Breuer, S.; Geelhaar, L.; Riechert, H.
Source: Self-asserted source
Steffen Breuer via Scopus - Elsevier

Vapor-liquid-solid nucleation of GaAs on Si(111): Growth evolution from traces to nanowires

Physical Review B - Condensed Matter and Materials Physics
2010 | Journal article
DOI: 10.1103/PhysRevB.82.075406
EID:

2-s2.0-77957581134

Part of ISSN: 10980121 1550235X
Contributors: Breuer, S.; Hilse, M.; Trampert, A.; Geelhaar, L.; Riechert, H.
Source: Self-asserted source
Steffen Breuer via Scopus - Elsevier

Ferromagnet-semiconductor nanowire coaxial heterostructures grown by molecular-beam epitaxy

Applied Physics Letters
2009 | Journal article
DOI: 10.1063/1.3240405
EID:

2-s2.0-70349669265

Part of ISSN: 00036951
Contributors: Hilse, M.; Takagaki, Y.; Herfort, J.; Ramsteiner, M.; Herrmann, C.; Breuer, S.; Geelhaar, L.; Riechert, H.
Source: Self-asserted source
Steffen Breuer via Scopus - Elsevier

Effect of the solvent on the conformation of isolated MEH-PPV chains intercalated into SnS<sub>2</sub>

ChemPhysChem
2008 | Journal article
DOI: 10.1002/cphc.200800109
EID:

2-s2.0-47949087398

Part of ISSN: 14397641 14394235
Contributors: Aharon, E.; Breuer, S.; Jaiser, F.; Köhler, A.; Frey, G.L.
Source: Self-asserted source
Steffen Breuer via Scopus - Elsevier
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