Personal information

Websites & social links

Google Scholar

Keywords

Power Transistors, Diamond, Gallium Nitride, Crystal Growth

Countries

United States

Activities

Collapse all

Employment (1)

Stanford University: Stanford, CA, US

2021-01-04 to present | Post-doctoral Researcher (Electrical Engineering)
Employment
Source: Self-asserted source
Mohamadali Malakoutian

Professional activities (1)

IEEE: New York, NY, US

2019 to present | Student
Membership
Source: Self-asserted source
Mohamadali Malakoutian

Works (25)

Development of 300-400 °C grown diamond for semiconductor devices thermal management

MRS ADVANCES
2023-11-10 | Journal article
DOI: 10.1557/s43580-023-00677-0
WOSUID:

WOS:001103119100001

Part of ISSN: 2059-8521
Part of ISSN: 2731-5894
Contributors: Malakoutian, Mohamadali; Soman, Rohith; Woo, Kelly; Chowdhury, Srabanti
Source: check_circle
Stanford University

SRC-led materials research: 40 years ago, and now

MRS ADVANCES
2023-11-03 | Journal article
DOI: 10.1557/s43580-023-00665-4
WOSUID:

WOS:001094447800002

Part of ISSN: 2059-8521
Part of ISSN: 2731-5894
Contributors: Zhirnov, Victor; Chen, Michelle E.; Malakoutian, Mohamadali; Margavio, Hannah R. M.; Pawliczak, Emma; Reidy, Kate; Yanez, Wilson; Younkin, Todd
Source: check_circle
Stanford University

Thermal Scaffolding for Ultra-Dense 3D Integrated Circuits

2023-01-01 | Conference paper
DOI: 10.1109/DAC56929.2023.10247815
WOSUID:

WOS:001073487300131
Contributors: Rich, Dennis; Kasperovich, Anna; Malakoutian, Mohamadali; Radway, Robert M.; Hagiwara, Shiho; Yoshikawa, Takahide; Chowdhury, Srabanti; Mitra, Subhasish
Source: check_circle
Stanford University

Impact of Diamond Passivation on f(T) and f(max) of mm-wave N-Polar GaN HEMTs

IEEE TRANSACTIONS ON ELECTRON DEVICES
2022-11-10 | Journal article
DOI: 10.1109/TED.2022.3218612
WOSUID:

WOS:000886832400001

Part of ISSN: 1557-9646
Part of ISSN: 0018-9383
Contributors: Zhou, Xinyu; Malakoutian, Mohamadali; Soman, Rohith; Bian, Zhengliang; Martinez, Rafael Perez; Chowdhury, Srabanti
Source: check_circle
Stanford University

Low Thermal Budget Growth of Near-Isotropic Diamond Grains for Heat Spreading in Semiconductor Devices

ADVANCED FUNCTIONAL MATERIALS
2022-09-18 | Journal article
DOI: 10.1002/adfm.202208997
WOSUID:

WOS:000854896500001

Part of ISSN: 1616-3028
Part of ISSN: 1616-301X
Contributors: Malakoutian, Mohamadali; Zheng, Xiang; Woo, Kelly; Soman, Rohith; Kasperovich, Anna; Pomeroy, James; Kuball, Martin; Chowdhury, Srabanti
Source: check_circle
Stanford University

Current Transient Spectroscopic Study of Vacancy Complexes in Diamond Schottky p-i-n Diode

IEEE TRANSACTIONS ON ELECTRON DEVICES
2022-06-22 | Journal article
DOI: 10.1109/TED.2022.3182931
WOSUID:

WOS:000826445500001

Part of ISSN: 1557-9646
Part of ISSN: 0018-9383
Contributors: Chaudhuri, Sandeep K.; Malakoutian, Mohamadali; Kleppinger, Joshua W.; Dutta, Maitreya; Koeck, Franz A.; Nemanich, Robert J.; Chowdhury, Srabanti; Mandal, Krishna C.
Source: check_circle
Stanford University

A study on sub-bandgap photoexcitation in nitrogen- and boron-doped diamond with interdigitated device structure

APPLIED PHYSICS LETTERS
2022-03-14 | Journal article
DOI: 10.1063/5.0083710
WOSUID:

WOS:000827449100002

Part of ISSN: 1077-3118
Part of ISSN: 0003-6951
Contributors: Woo, Kelly; Malakoutian, Mohamadali; Reeves, Benjamin A.; Chowdhury, Srabanti
Source: check_circle
Stanford University

Demonstration of Monolithic Polycrystalline Diamond-GaN Complementary FET Technology for High-Temperature Applications

ACS Applied Electronic Materials
2021 | Journal article
DOI: 10.1021/ACSAELM.1C00571
WOSUID: WOS:000711759300015
Contributors: Ren, Chenhao; Malakoutian, Mohamadali; Li, Siwei; Ercan, Burcu; Chowdhury, Srabanti
Source: check_circle
Web of Science Researcher Profile Sync
grade
Preferred source (of 2)‎

Diamond-Incorporated Flip-Chip Integration for Thermal Management of GaN and Ultra-Wide Bandgap RF Power Amplifiers

IEEE Transactions on Components, Packaging and Manufacturing Technology
2021 | Journal article
DOI: 10.1109/TCPMT.2021.3091555
WOSUID: WOS:000685887800009
Contributors: Shoemaker, Daniel; Malakoutian, Mohamadali; Chatterjee, Bikramjit; Song, Yiwen; Kim, Samuel; Foley, Brian M.; Graham, Samuel; Nordquist, Christopher D.; Chowdhury, Srabanti; Choi, Sukwon
Source: check_circle
Web of Science Researcher Profile Sync
grade
Preferred source (of 2)‎

Record-Low Thermal Boundary Resistance between Diamond and GaN-on-SiC for Enabling Radiofrequency Device Cooling

ACS Applied Materials & Interfaces
2021 | Journal article
DOI: 10.1021/ACSAMI.1C13833
WOSUID: WOS:000729736200001
Contributors: Malakoutian, Mohamadali; Field, Daniel E.; Hines, Nicholas J.; Pasayat, Shubhra; Graham, Samuel; Kuball, Martin; Chowdhury, Srabanti
Source: check_circle
Web of Science Researcher Profile Sync
grade
Preferred source (of 2)‎

Polycrystalline diamond growth on beta-Ga2O3 for thermal management

APPLIED PHYSICS EXPRESS
2021-05-01 | Journal article
DOI: 10.35848/1882-0786/abf4f1
WOSUID:

WOS:000641029300001

Part of ISSN: 1882-0786
Part of ISSN: 1882-0778
Contributors: Malakoutian, Mohamadali; Song, Yiwen; Yuan, Chao; Ren, Chenhao; Lundh, James Spencer; Lavelle, Robert M.; Brown, Joseph E.; Snyder, David W.; Graham, Samuel; Choi, Sukwon et al.
Source: check_circle
Stanford University
grade
Preferred source (of 2)‎

Diamond Integration on GaN for Channel Temperature Reduction

2021-01-01 | Conference paper
DOI: 10.1109/WiPDA49284.2021.9645133
WOSUID:

WOS:000787172500014
Contributors: Malakoutian, Mohamadali; Xu, Runjie Lily; Ren, Chenhao; Pasayat, Shubhra; Sayed, Islam; Pop, Eric; Chowdhury, Srabanti
Source: check_circle
Stanford University

Schottky Barrier Height Analysis of Diamond SPIND Using High Temperature Operation up to 873 K

IEEE Journal of the Electron Devices Society
2020 | Journal article
DOI: 10.1109/JEDS.2020.2999269
Part of ISSN: 2168-6734
Source: Self-asserted source
Mohamadali Malakoutian
grade
Preferred source (of 3)‎

Vibrational and sonochemical characterization of ultrasonic endodontic activating devices for translation to clinical efficacy

Materials Science and Engineering: C
2020 | Journal article
DOI: 10.1016/J.MSEC.2020.110646
WOSUID: WOS:000527394600120
Contributors: Dashtimoghadam, Erfan; Johnson, Alexander; Fahimipour, Farahnaz; Malakoutian, Mohamadali; Vargas, Jessica; Gonzalez, Jose; Ibrahim, Mohamed; Baeten, John; Tayebi, Lobat
Source: check_circle
Web of Science Researcher Profile Sync

Analysis of mobility-limiting mechanisms of the two-dimensional hole gas on hydrogen-terminated diamond

PHYSICAL REVIEW B
2020-08-10 | Journal article
DOI: 10.1103/PhysRevB.102.075303
WOSUID:

WOS:000557726800002

Part of ISSN: 2469-9969
Part of ISSN: 2469-9950
Contributors: Peterson, Ricardo; Malakoutian, Mohamadali; Xu, Xiaoqing; Chapin, Caitlin; Chowdhury, Srabanti; Senesky, Debbie G.
Source: check_circle
Stanford University
grade
Preferred source (of 2)‎

Hydrogen-terminated diamond FET and GaN HEMT delivering CMOS inverter operation at high-temperature

2020-01-01 | Conference paper
WOSUID:

WOS:000615719100010

Part of ISSN: 1548-3770
Contributors: Ren, Chenhao; Malakoutian, Mohamadali; Li, Siwei; Chowdhury, Srabanti
Source: check_circle
Stanford University
grade
Preferred source (of 2)‎

A study on the nucleation and MPCVD growth of thin, dense, and contiguous nanocrystalline diamond films on bare and Si3N4-coated N-polar GaN

Semiconductor Science and Technology
2019-11 | Journal article
DOI: 10.1088/1361-6641/ab4f16
Source: Self-asserted source
Mohamadali Malakoutian

A Study on the First-Derivative Output Properties of GaN Static Induction Transistor with Submicrometer Fin Width

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
2019-11-19 | Journal article
DOI: 10.1002/pssb.201900545
WOSUID:

WOS:000497179400001

Part of ISSN: 1521-3951
Part of ISSN: 0370-1972
Contributors: Chun, Jaeyi; Li, Siwei; Malakoutian, Mohamadali; Ji, Dong; Chowdhury, Srabanti
Source: check_circle
Stanford University
grade
Preferred source (of 2)‎

A Study on the Growth Window of Polycrystalline Diamond on Si3N4-coated N-Polar GaN

Crystals
2019-09-25 | Journal article
DOI: 10.3390/cryst9100498
Part of ISSN: 2073-4352
Source: Self-asserted source
Mohamadali Malakoutian
grade
Preferred source (of 4)‎

A 4.5 μm PIN diamond diode for detecting slow neutrons

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
2018-09 | Journal article
DOI: 10.1016/j.nima.2018.06.061
Part of ISSN: 0168-9002
Source: Self-asserted source
Mohamadali Malakoutian
grade
Preferred source (of 2)‎

A patterned single layer graphene resistance temperature sensor

Scientific Reports
2017-12 | Journal article
DOI: 10.1038/s41598-017-08967-y
Part of ISSN: 2045-2322
Source: Self-asserted source
Mohamadali Malakoutian
grade
Preferred source (of 2)‎

On-chip detection of gel transition temperature using a novel micro-thermomechanical method

PLOS ONE
2017-08-17 | Journal article
DOI: 10.1371/journal.pone.0183492
Part of ISSN: 1932-6203
Source: Self-asserted source
Mohamadali Malakoutian
grade
Preferred source (of 2)‎

Optimization of the Bowtie Gap Geometry for a Maximum Electric Field Enhancement

Plasmonics
2017-04 | Journal article
DOI: 10.1007/s11468-016-0262-x
Part of ISSN: 1557-1955
Part of ISSN: 1557-1963
Source: Self-asserted source
Mohamadali Malakoutian
grade
Preferred source (of 2)‎

A Label-Free Detection of Biomolecules Using Micromechanical Biosensors

Chinese Physics Letters
2013-06 | Journal article
DOI: 10.1088/0256-307x/30/6/068701
Part of ISSN: 0256-307X
Part of ISSN: 1741-3540
Source: Self-asserted source
Mohamadali Malakoutian
grade
Preferred source (of 2)‎

Development of Polycrystalline Diamond Compatible with the Latest N-Polar GaN mm-Wave Technology

Crystal Growth & Design
Journal article
DOI: 10.1021/acs.cgd.0c01319
Source: Self-asserted source
Mohamadali Malakoutian
grade
Preferred source (of 3)‎

Peer review (45 reviews for 13 publications/grants)

Review activity for ACS photonics. (1)
Review activity for Advanced materials interfaces. (3)
Review activity for Crystals. (2)
Review activity for Electronics letters. (1)
Review activity for Energies. (2)
Review activity for Functional Diamond (3)
Review activity for IEEE electron device letters : (13)
Review activity for IEEE transactions on electron devices. (7)
Review activity for Micromachines. (3)
Review activity for Physica status solidi. (2)
Review activity for Reviews in plasmonics. (1)
Review activity for Semiconductor science and technology. (5)
Review activity for Sensors. (2)
How many people are using ORCID?