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Employment (2)

Robert Bosch GmbH: Dresden, DE

2024 to present
Employment
Source: Self-asserted source
Christoph Weimer

Technische Universität Dresden: Dresden, DE

2018 to 2024 | Research Scientist (Chair of Electron Devices and Integrated Circuits)
Employment
Source: Self-asserted source
Christoph Weimer

Education and qualifications (2)

Technische Universität Dresden: Dresden, DE

2011 to 2018 | Dipl.-Ing. (Electronics Engineering)
Education
Source: Self-asserted source
Christoph Weimer

École Centrale Paris: Châtenay-Malabry, FR

2013 to 2015 | Ingénieur diplômé de l'École Centrale des Arts et Manufactures (Master's degree)
Education
Source: Self-asserted source
Christoph Weimer

Works (14)

Characterization, Analysis, and Modeling of Long-Term RF Reliability and Degradation of SiGe HBTs for High Power Density Applications

IEEE Transactions on Device and Materials Reliability
2024-03 | Journal article
DOI: 10.1109/TDMR.2023.3343503
Contributors: Christoph Weimer; Gerhard G. Fischer; Michael Schröter
Source: check_circle
Crossref

Numerical Device Simulation Aided Study of RF-Stress-Caused Degradation in SiGe HBTs

2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
2023-10-16 | Conference paper
DOI: 10.1109/bcicts54660.2023.10310894
Contributors: Christoph Weimer; Viktor Kazantsev; Markus Müller; Michael Schröter
Source: Self-asserted source
Christoph Weimer

A W-band Class-F<sub>234</sub> SiGe-HBT Power Amplifier with 35/19.7% Peak/PBO<sub>6dB</sub> PAE and 26% 1-dB Large-Signal Power Bandwidth

2023 18th European Microwave Integrated Circuits Conference (EuMIC)
2023-09-18 | Conference paper
DOI: 10.23919/eumic58042.2023.10288907
Contributors: Eren Vardarli; Mario Krattenmacher; Christoph Weimer; Austin Ying-Kuang Chen; Michael Schröter
Source: Self-asserted source
Christoph Weimer

Nonlinear Compact Modeling of InP/InGaAs DHBTs with HICUM/L2

ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC)
2023-09-11 | Conference paper
DOI: 10.1109/essderc59256.2023.10268515
Contributors: Markus Müller; Christoph Weimer; Michael Schröter
Source: Self-asserted source
Christoph Weimer

RF Reliability of SiGe and InP HBTs: A Comparative Study

2023 IEEE/MTT-S International Microwave Symposium - IMS 2023
2023-06-11 | Conference paper
DOI: 10.1109/ims37964.2023.10187940
Contributors: Christoph Weimer; Markus Müller; Eren Vardarli; Martin Claus; Michael Schröter
Source: Self-asserted source
Christoph Weimer

Characterization of Dynamic Large-Signal Operating Limits and Long-Term RF Reliability of SiGe HBTs

2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
2022-10-16 | Conference paper
DOI: 10.1109/bcicts53451.2022.10051735
Contributors: Christoph Weimer; Xiaodi Jin; Gerhard G. Fischer; Michael Schröter
Source: Self-asserted source
Christoph Weimer

Thermal impedance of SiGe HBTs: Characterization and modeling

2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
2022-10-16 | Conference paper
DOI: 10.1109/bcicts53451.2022.10051764
Contributors: Xiaodi Jin; Guangsheng Liang; Yves Zimmermann; Gerhard Fischer; Christoph Weimer; Mario Krattenmacher; Yaxin Zhang; Michael Schröter
Source: Self-asserted source
Christoph Weimer

Methods for Extracting the Temperature- and Power-Dependent Thermal Resistance for SiGe and III-V HBTs From DC Measurements: A Review and Comparison Across Technologies

IEEE Transactions on Electron Devices
2022-08 | Journal article
DOI: 10.1109/TED.2022.3185574
Contributors: Markus Muller; Vincenzo d'Alessandro; Sophia Falk; Christoph Weimer; Xiaodi Jin; Mario Krattenmacher; Pascal Kuthe; Martin Claus; Michael Schroter
Source: check_circle
Crossref

Long-Term Large-Signal RF Reliability Characterization of SiGe HBTs Using a Passive Impedance Tuner System

2022 IEEE/MTT-S International Microwave Symposium - IMS 2022
2022-06-19 | Conference paper
DOI: 10.1109/ims37962.2022.9865576
Contributors: Christoph Weimer; Eren Vardarli; Gerhard G. Fischer; Michael Schroter
Source: Self-asserted source
Christoph Weimer

Corrections to “Pulsed Measurements Based Investigation of Trap Capture and Emission Processes in CNTFETs” [2021 459-465]

IEEE Transactions on Nanotechnology
2021 | Journal article
DOI: 10.1109/TNANO.2021.3093663
Contributors: Christoph Weimer; Anibal Pacheco-Sanchez; Jens Trommer; Michael Schroter
Source: check_circle
Crossref

Pulsed Measurements Based Investigation of Trap Capture and Emission Processes in CNTFETs

IEEE Transactions on Nanotechnology
2021 | Journal article
DOI: 10.1109/TNANO.2021.3080455
Contributors: Christoph Weimer; Anibal Pacheco-Sanchez; Jens Trommer; Michael Schroter
Source: check_circle
Crossref

An Experimental Load-Pull Based Large-Signal RF Reliability Study of SiGe HBTs

2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
2021-12-05 | Conference paper
DOI: 10.1109/bcicts50416.2021.9682473
Contributors: C. Weimer; P. Sakalas; M. Muller; G. G. Fischer; M. Schroter
Source: Self-asserted source
Christoph Weimer

Augmented Drift-Diffusion Transport for the Simulation of Advanced SiGe HBTs

2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
2021-12-05 | Conference paper
DOI: 10.1109/bcicts50416.2021.9682487
Contributors: M. Muller; M. Schroter; C. Jungemann; C. Weimer
Source: Self-asserted source
Christoph Weimer

Modeling the temperature dependence of sheet and contact resistances in SiGe:C HBTs from 4.3 to 423 K

2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
2020-11-16 | Conference paper
DOI: 10.1109/bcicts48439.2020.9392930
Contributors: Xiaodi Jin; Christoph Weimer; Yaxin Zhang; Michael Schroter
Source: Self-asserted source
Christoph Weimer

Peer review (1 review for 1 publication/grant)

Review activity for Materials science in semiconductor processing. (1)
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