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Device Physics Lab

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Researcher Name Resolver ID: 1000090282334

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Japan

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Employment (2)

University of Tsukuba: Tsukuba, Ibaraki, JP

1995-12-01 to present | Professor (Institute of Applied Physics)
Employment
Source: Self-asserted source
Nobuyuki Sano

University of Tsukuba: Tsukuba, Ibaraki, JP

1995-12-01 to present | Professor (Faculty of Pure and Applied Sciences)
Employment
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University of Tsukuba

Professional activities (2)

IEEE: New York, NY, US

Membership
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Nobuyuki Sano

American Physical Society: College Park, MD, US

Membership
Source: Self-asserted source
Nobuyuki Sano

Works (12)

Nonequilibrium Green's function formalism applicable to discrete impurities in semiconductor nanostructures

Physical Review B
2025-03-19 | Journal article
DOI: 10.1103/PhysRevB.111.125413
Contributors: Nobuyuki Sano
Source: check_circle
Crossref

Fundamental Aspects of Semiconductor Device Modeling Associated With Discrete Impurities: Nonequilibrium Green’s Function Scheme

IEEE Transactions on Electron Devices
2025-01 | Journal article
DOI: 10.1109/TED.2024.3499940
Contributors: Nobuyuki Sano
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Crossref
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Shallow p-n Junctions Under Discrete Impurities in Semiconductor Devices

IEEE Transactions on Electron Devices
2024-02 | Journal article
DOI: 10.1109/TED.2023.3341839
Contributors: Nobuyuki Sano
Source: check_circle
Crossref

Fundamental Aspects of Semiconductor Device Modeling Associated With Discrete Impurities: Monte Carlo Simulation Scheme

IEEE Transactions on Electron Devices
2021-11 | Journal article
DOI: 10.1109/TED.2021.3082804
Contributors: Nobuyuki Sano; Takayuki Fukui
Source: check_circle
Crossref

Quantum kinetic equation for the Wigner function and reduction to the Boltzmann transport equation under discrete impurities

Physical Review E
2021-07-27 | Journal article
DOI: 10.1103/PhysRevE.104.014141
Contributors: Nobuyuki Sano
Source: check_circle
Crossref

Potential application of p–i–n semiconductor capacitor with non-linear voltage–charge characteristic for secondary battery

Journal of Applied Physics
2020-09-07 | Journal article
DOI: 10.1063/5.0011886
Contributors: Katsuhisa Yoshida; Nobuyuki Sano
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Crossref

Fundamental Aspects of Semiconductor Device Modeling Associated With Discrete Impurities: Drift-Diffusion Simulation Scheme

IEEE Transactions on Electron Devices
2020-08 | Journal article
DOI: 10.1109/TED.2020.3001244
Contributors: Nobuyuki Sano; Katsuhisa Yoshida; Kohei Tsukahara; Gyutae Park
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Crossref

Polarization Effect Due to Discreteness of Dopants in Nanoscale MOSFETs

IEEE Transactions on Electron Devices
2019-10 | Journal article
DOI: 10.1109/TED.2019.2935503
Contributors: Katsuhisa Yoshida; Kohei Tsukahara; Nobuyuki Sano
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Crossref

Physics of Discrete Impurities under the Framework of Device Simulations for Nanostructure Devices

Materials
2018-12-16 | Journal article
DOI: 10.3390/ma11122559
Part of ISSN: 1996-1944
Source: Self-asserted source
Nobuyuki Sano

Variability and self-average of impurity-limited resistance in quasi-one dimensional nanowires

Solid-State Electronics
2017-02 | Journal article
DOI: 10.1016/j.sse.2016.10.016
Part of ISSN: 0038-1101
Source: Self-asserted source
Nobuyuki Sano

Impurity-limited resistance and phase interference of localized impurities under quasi-one dimensional nano-structures

Journal of Applied Physics
2015-12-28 | Journal article
DOI: 10.1063/1.4938392
Contributors: Nobuyuki Sano
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Crossref

Enhanced impurity-limited mobility in ultra-scaled Si nanowire junctionless field-effect transistors

Applied Physics Letters
2015-12-21 | Journal article
DOI: 10.1063/1.4937901
Contributors: Akiko Ueda; Mathieu Luisier; Nobuyuki Sano
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Crossref

Peer review (37 reviews for 2 publications/grants)

Review activity for Journal of applied physics. (1)
Review activity for Journal of computational electronics. (36)
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