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Experiment and simulation on degradation and burnout mechanisms of SiC MOSFET under heavy ion irradiation

Chinese Physics B
2023 | Journal article
DOI: 10.1088/1674-1056/AC8CDA
WOSUID: WOS:000929467000001
Contributors: Zhang, Hong; Guo, Hongxia; Lei, Zhifeng; Peng, Chao; Zhang, Zhangang; Chen, Ziwen; Sun, Changhao; He, Yujuan; Zhang, Fengqi; Pan, Xiaoyu et al.
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Mechanisms and shielding characteristics of alpha particle-induced soft errors in 28 and 40 nm configuration memories of SRAM-based FPGAs

Microelectronics Reliability
2023 | Journal article
DOI: 10.1016/J.MICROREL.2022.114861
WOSUID: WOS:000901824000006
Contributors: Luo, Jun-Yang; Zhang, Hong; Zhang, Zhan-Gang; Lei, Zhi-Feng; Guo, Jin-Long; Du, Guang-Hua; Peng, Chao; He, YuJuan; Zhong, Xiang -Li
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Mono-Energetic Proton Induced Damages in SiC Power MOSFETs

IEEE Transactions on Device and Materials Reliability
2023 | Journal article
DOI: 10.1109/TDMR.2022.3231614
WOSUID: WOS:000967483600008
Contributors: Peng, Chao; Lei, Zhifeng; Zhang, Hong; Chen, Ziwen; Zhang, Zhangang; He, Yujuan; Yao, Bin
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Damage mechanism of SiC Schottky barrier diode irradiated by heavy ions

Acta Physica Sinica
2022 | Journal article
DOI: 10.7498/APS.71.20220628
WOSUID: WOS:000881659000025
Contributors: Chao, Peng; Lei Zhi-Feng; Zhang Zhan-Gang; He Yu-Juan; Chen Yi-Qiang; Lu Guo-Guang; Yun, Huang
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Impact of incident direction on neutron-induced single-bit and multiple-cell upsets in 14 nm FinFET and 65 nm planar SRAMs

Chinese Physics B
2022 | Journal article
DOI: 10.1088/1674-1056/AC785A
WOSUID: WOS:000889814300001
Contributors: Yang, Shao-Hua; Zhang, Zhan-Gang; Lei, Zhi-Feng; Huang, Yun; Xi, Kai; Wang, Song-Lin; Liang, Tian-Jiao; Tong, Teng; Li, Xiao-Hui; Peng, Chao et al.
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Influence of Drain Bias and Flux on Heavy Ion-Induced Leakage Currents in SiC Power MOSFETs

IEEE Transactions on Nuclear Science
2022 | Journal article
DOI: 10.1109/TNS.2022.3166521
WOSUID: WOS:000797421800009
Contributors: Peng, Chao; Lei, Zhifeng; Zhang, Zhangang; Chen, Yiqiang; He, Yujuan; Yao, Bin; En, Yunfei
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Mechanism and Equivalence of Single Event Effects Induced by 14 MeV Neutrons in High-Speed QDR SRAM

Applied Sciences
2022 | Journal article
DOI: 10.3390/APP12199685
WOSUID: WOS:000866689500001
Contributors: Yang, Shaohua; Zhang, Zhangang; Lei, Zhifeng; Tong, Teng; Li, Xiaohui; Xi, Kai; Wu, Fugen
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Mechanism of reverse gate leakage current reduction in AlGaN/GaN high-electron-mobility-transistor after 3-MeV proton irradiation

Applied Physics Letters
2022 | Journal article
DOI: 10.1063/5.0102366
WOSUID: WOS:000841998800019
Contributors: Sun, Chang-Hao; Peng, Chao; Zhang, Zhan-Gang; Wang, Jin-Bin; Yue, Shao-Zhong; Zhang, Hong; Chen, Zi-Wen; Ou-Yang, Xiao-Ping; Lei, Zhi-Feng; Zhong, Xiang-Li
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Synergistic Effect of Electrical Stress and Neutron Irradiation on Silicon Carbide Power MOSFETs

IEEE Transactions on Electron Devices
2022 | Journal article
DOI: 10.1109/TED.2022.3170539
WOSUID: WOS:000791704700001
Contributors: Yue, Shaozhong; Chen, Ziwen; Zhang, Zhangang; Hong, Zhang; Zhu, Tian; Peng, Chao; Zheng, Xuefeng; Lei, Zhifeng
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Thermal Annealing of Total Ionizing Dose Effect for Partially-Depleted SOI MOSFET

European Conference on Radiation and Its Effects on Components and Systems (RADECS)
2022 | Conference paper
DOI: 10.1109/RADECS50773.2020.9857715
WOSUID: WOS:000861424900001
Contributors: Peng, Chao; Lei, Zhifeng; Zhang, Zhangang; He, Yujuan; Huang, Yun; En, Yunfei
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Effect of Hydrogen on Radiation-Induced Displacement Damage in AlGaN/GaN HEMTs

IEEE Transactions on Nuclear Science
2021 | Journal article
DOI: 10.1109/TNS.2021.3074379
WOSUID: WOS:000664105500009
Contributors: Wan, Pengfei; Yang, Jianqun; Lv, Gang; Lv, Ling; Dong, Shangli; Li, Weiqi; Xu, Xiaodong; Peng, Chao; Zhang, Zhangang; Li, Xingji
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Experimental and simulation studies of radiation-induced single event burnout in SiC-based power MOSFETs

IET Power Electronics
2021 | Journal article
DOI: 10.1049/PEL2.12147
WOSUID: WOS:000654400400001
Contributors: Peng, Chao; Lei, Zhifeng; Chen, Ziwen; Yue, Shaozhong; Zhang, Zhangang; He, Yujuan; Huang, Yun
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Hydrogen-Related Recovery Effect of AlGaN/GaN High-Electron-Mobility Transistors Irradiated by High-Fluence Protons

IEEE Transactions on Nuclear Science
2021 | Journal article
DOI: 10.1109/TNS.2021.3051972
WOSUID: WOS:000619349900005
Contributors: Chen, Ziwen; Yue, Shaozhong; Peng, Chao; Zhang, Zhangang; Liu, Chang; Wang, Lei; Huang, Yiming; Huang, Yun; He, Yujuan; Zhong, Xiangli et al.
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Influence of Buried Oxide Si<SUP>+</SUP> Implantation on TID and NBTI Effects for PDSOI MOSFETs

IEEE Transactions on Nuclear Science
2021 | Journal article
DOI: 10.1109/TNS.2021.3049284
WOSUID: WOS:000619349900008
Contributors: Peng, Chao; En, Yunfei; Lei, Zhifeng; Gao, Rui; Zhang, Zhangang; He, Yujuan; Chen, Yiqiang; Huang, Yun
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Proton-Induced Effect on AlGaN/GaN HEMTs After Hydrogen Treatment

IEEE Transactions on Device and Materials Reliability
2021 | Journal article
DOI: 10.1109/TDMR.2021.3090337
WOSUID: WOS:000692579700006
Contributors: Chen, Ziwen; Yue, Shaozhong; Wang, Jinbin; Zhang, Zhangang; Huang, Yiming; Wang, Lei; Peng, Chao; Zhong, Xiangli; Lei, Zhifeng
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Research on Negative Bias Temperature Instability Effects Under the Coupling of Total Ionizing Dose Irradiation for PDSOI MOSFETs

IEEE Access
2021 | Journal article
DOI: 10.1109/ACCESS.2021.3056151
WOSUID: WOS:000617347000001
Contributors: Peng, Chao; Gao, Rui; Lei, Zhifeng; Zhang, Zhangang; Chen, Yiqiang; En, Yun-Fei; Huang, Yun
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Simulations of single event effects on the ferroelectric capacitor-based non-volatile SRAM design

Science China Information Sciences
2021 | Journal article
DOI: 10.1007/S11432-019-2854-9
WOSUID: WOS:000593479700001
Contributors: Wang, Jianjian; Bi, Jinshun; Liu, Gang; Bai, Hua; Xi, Kai; Li, Bo; Majumdar, Sandip; Ji, Lanlong; Liu, Ming; Zhang, Zhangang
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Single-Event Damage-Induced Gate-Leakage Mechanisms in AlGaN/GaN High-Electron-Mobility Transistors

IEEE Transactions on Electron Devices
2021 | Journal article
DOI: 10.1109/TED.2021.3075667
WOSUID: WOS:000652799800011
Contributors: Yue, Shaozhong; Zhang, Zhangang; Chen, Ziwen; Zheng, Xuefeng; Wang, Lei; Huang, Yiming; Huang, Yun; Peng, Chao; Lei, Zhifeng
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Analysis of Atmospheric Neutron Radiation Effects in Automotive Electronics Systems

TH IEEE INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA)
2020 | Journal article
DOI: 10.1109/IPFA49335.2020.9260970
WOSUID: WOS:000635636600079
Contributors: He, Yujuan; Lei, Zhifeng; Zhang, Zhangang; Peng, Chao; Li, Jianke; Zhang, Enxia; Yang, Yintang
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Comparison of neutron induced single event upsets in 14 nm FinFET and 65 nm planar static random access memory devices

Acta Physica Sinica
2020 | Journal article
DOI: 10.7498/APS.69.20191209
WOSUID: WOS:000527802300015
Contributors: Zhang Zhan-Gang; Lei Zhi-Feng; Tong Teng; Li Xiao-Hui; Wang Song-Lin; Liang Tian-Jiao; Xi Kai; Peng Chao; He Yu-Juan; Huang Yun et al.
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High-Fluence Proton-Induced Degradation on AlGaN/GaN High-Electron-Mobility Transistors

IEEE Transactions on Nuclear Science
2020 | Journal article
DOI: 10.1109/TNS.2020.2974916
WOSUID: WOS:000550669800016
Contributors: Yue, Shaozhong; Lei, Zhifeng; Peng, Chao; Zhong, Xiangli; Wang, Jinbin; Zhang, Zhangang; En, Yunfei; Wang, Yunhui; Hu, Liang
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Impact of electrical stress on total ionizing dose effects on graphene nano-disc non-volatile memory devices

Microelectronics Reliability
2020 | Journal article
DOI: 10.1016/J.MICROREL.2020.113882
WOSUID: WOS:000593889100012
Contributors: Xi, K.; Bi, J. S.; Xu, Y. N.; Li, Y. D.; Zhang, Z. G.; Liu, M.
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Investigation of Negative Bias Temperature Instability Effect in Partially Depleted SOI pMOSFET

IEEE Access
2020 | Journal article
DOI: 10.1109/ACCESS.2020.2997463
WOSUID: WOS:000541127800008
Contributors: Peng, Chao; Lei, Zhifeng; Gao, Rui; Zhang, Zhangang; Chen, Yiqiang; En, Yunfei; Huang, Yun
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Investigation of radiation-induced degradations in four-junction solar cell by experiment and simulation

Microelectronics Reliability
2020 | Journal article
DOI: 10.1016/J.MICROREL.2020.113646
WOSUID: WOS:000531064100008
Contributors: Peng, Chao; Ding, Fei; Lei, Zhifeng; Zhang, Zhangang; En, Yunfei; Huang, Yun
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Mechanisms of alpha particle induced soft errors in nanoscale static random access memories

Acta Physica Sinica
2020 | Journal article
DOI: 10.7498/APS.69.20201796
WOSUID: WOS:000560747900022
Contributors: Zhang Zhan-Gang; Ye Bing; Ji Qing-Gang; Guo An-Long; Xi Kai; Lei Zhi-Feng; Huang Yun; Peng Chao; He Yu-Juan; Liu Jie et al.
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Heavy-ion and pulsed-laser single event effects in 130-nm CMOS-based thin/thick gate oxide anti-fuse PROMs

Nuclear Science and Techniques
2019 | Journal article
DOI: 10.1007/S41365-019-0602-6
WOSUID: WOS:000464768200002
Contributors: Cai, Chang; Liu, Tian-Qi; Li, Xiao-Yuan; Liu, Jie; Zhang, Zhan-Gang; Geng, Chao; Zhao, Pei-Xiong; Li, Dong-Qing; Ye, Bing; Li, Qing-Gang et al.
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Incorporation of Secondary-Ion Information and TCAD Simulation for Atmospheric Neutron Soft-Error-Rate Prediction in SRAMs

IEEE Transactions on Nuclear Science
2019 | Journal article
DOI: 10.1109/TNS.2019.2938988
WOSUID: WOS:000566706700001
Contributors: Peng, Chao; Zhang, Zhangang; Lei, Zhifeng; He, Yujuan; Lai, Canxiong; Chen, Yiqiang; Huang, Yun; En, Yunfei
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Investigation of maximum proton energy for qualified ground-based evaluation of single-event effects in SRAM devices

Nuclear Science and Techniques
2019 | Journal article
DOI: 10.1007/S41365-019-0570-X
WOSUID: WOS:000462284000012
Contributors: Zhang, Zhan-Gang; Huang, Yun; En, Yun-Fei; Lei, Zhi-Feng
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Real-time soft error testing system for large-area QDR II plus SRAM array on the Tibetan Plateau

Microelectronics Reliability
2019 | Journal article
DOI: 10.1016/J.MICROREL.2019.113515
WOSUID: WOS:000500386300009
Contributors: Tong, Teng; Zhang, Zhangang; Wei, Cunfeng; Lei, Zhifeng; Li, Mohan; Li, Daowu; Wang, Peilin; Hu, Tingting; Feng, Baotong; Li, Xiaohui
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Tibetan-Plateau-Based Real-Time Testing and Simulations of Single-Bit and Multiple-Cell Upsets in QDRII plus SRAM Devices

IEEE Transactions on Nuclear Science
2019 | Journal article
DOI: 10.1109/TNS.2019.2913190
WOSUID: WOS:000476782600003
Contributors: Zhang, Zhangang; Lei, Zhifeng; Tong, Teng; Li, Xiaohui; Xi, Kai; Peng, Chao; Shi, Qian; He, Yujuan; Huang, Yun; En, Yunfei
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Degradation mechanisms of AlGaN/GaN HEMTs under 800 MeV Bi ions irradiation

Microelectronics Reliability
2018 | Journal article
DOI: 10.1016/J.MICROREL.2017.07.086
WOSUID: WOS:000423891400037
Contributors: Lei, Z. F.; Guo, H. X.; Tang, M. H.; Zeng, C.; Zhang, Z. G.; Chen, H.; En, Y. F.; Huang, Y.; Chen, Y. Q.; Peng, C.
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Extrapolation Method of On-Orbit Soft Error Rates of EDAC SRAM Devices From Accelerator-Based Tests

IEEE Transactions on Nuclear Science
2018 | Journal article
DOI: 10.1109/TNS.2018.2875051
WOSUID: WOS:000450189800006
Contributors: Zhang, Zhangang; Lei, Zhifeng; Zhao, Guilin; Juan, Yang; He, Yujuan; Peng, Chao; Liu, Yuan; Shi, Qian; Huang, Yun; En, Yunfei
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Heavy Ion Radiation Effects on a 130-nm COTS NVSRAM Under Different Measurement Conditions

IEEE Transactions on Nuclear Science
2018 | Journal article
DOI: 10.1109/TNS.2018.2822341
WOSUID: WOS:000432470500005
Contributors: Liu, Tianqi; Liu, Jie; Xi, Kai; Zhang, Zhangang; He, Deyan; Ye, Bing; Yin, Yanan; Ji, Qinggang; Wang, Bin; Luo, Jie et al.
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Mechanism of high-fluence proton induced electrical degradation in AlGaN/GaN high-electron-mobility transistors

Japanese Journal of Applied Physics
2018 | Journal article
DOI: 10.7567/JJAP.57.074101
WOSUID: WOS:000434995800001
Contributors: Lei, Zhifeng; Guo, Hongxia; Tang, Minghua; Peng, Chao; Zhang, Zhangang; Huang, Yun; En, Yunfei
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Mechanisms of atmospheric neutron-induced single event upsets in nanometric SOI and bulk SRAM devices based on experiment-verified simulation tool

Chinese Physics B
2018 | Journal article
DOI: 10.1088/1674-1056/27/6/066105
WOSUID: WOS:000435919700005
Contributors: Lei, Zhi-Feng; Zhang, Zhan-Gang; En, Yun-Fei; Huang, Yun
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Radiation Hardening by the Modification of Shallow Trench Isolation Process in Partially Depleted SOI MOSFETs

IEEE Transactions on Nuclear Science
2018 | Journal article
DOI: 10.1109/TNS.2018.2798295
WOSUID: WOS:000427694800005
Contributors: Peng, Chao; Hu, Zhiyuan; En, Yunfei; Chen, Yiqiang; Lei, Zhifeng; Zhang, Zhangang; Zhang, Zhengxuan; Li, Bin
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Radiation induced parasitic effect in silicon-on-insulator metal-oxide-semiconductor field-effect transistor

Acta Physica Sinica
2018 | Journal article
DOI: 10.7498/APS.67.20181372
WOSUID: WOS:000449700800029
Contributors: Peng Chao; En Yun-Fei; Li Bin; Lei Zhi-Feng; Zhang Zhan-Gang; He Yu-Juan; Huang Yun
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The Impacts of Heavy Ion Energy on Single Event Upsets in SOI SRAMs

IEEE Transactions on Nuclear Science
2018 | Journal article
DOI: 10.1109/TNS.2018.2817574
WOSUID: WOS:000432470500002
Contributors: Gu, Song; Liu, Jie; Bi, Jinshun; Zhao, Fazhan; Zhang, Zhangang; Xi, Kai; Peng, Kai; Zhang, Yingjun
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Single event upset characteristics and physical mechanism for nanometric SOI SRAM induced by space energetic ions

Acta Physica Sinica
2017 | Journal article
DOI: 10.7498/APS.66.246102
WOSUID: WOS:000425270000021
Contributors: Zhang Zhan-Gang; Lei Zhi-Feng; Long, Yue; Yuan, Liu; He Yu-Juan; Chao, Peng; Qian, Shi; Yun, Huang; En Yun-Fei
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Heavy Ions Irradiation Effects on AlGaN/GaN High Electron Mobility Transistors

European Conference on Radiation and Its Effects on Components and Systems (RADECS)
2016 | Conference paper
WOSUID: WOS:000450759400011
Contributors: Lei, Zhifeng; Guo, Hongxia; Tang, Minghua; Zeng, Chang; Chen, Hui; Zhang, Zhangang
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Implementation and verification of different ECC mitigation designs for BRAMs in flash-based FPGAs

Chinese Physics C
2016 | Journal article
DOI: 10.1088/1674-1137/40/4/046103
WOSUID: WOS:000374121600011
Contributors: Yang, Zhen-Lei; Wang, Xiao-Hui; Zhang, Zhan-Gang; Liu, Jie; Su, Hong
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Monte Carlo predictions of proton SEE cross-sections from heavy ion test data

Chinese Physics C
2016 | Journal article
DOI: 10.1088/1674-1137/40/6/066001
WOSUID: WOS:000377558800007
Contributors: Xi, Kai; Geng, Chao; Zhang, Zhan-Gang; Hou, Ming-Dong; Sun, You-Mei; Luo, Jie; Liu, Tian-Qi; Wang, Bin; Ye, Bing; Yin, Ya-Nan et al.
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Monte-Carlo prediction of single-event characteristics of 65 nm CMOS SRAM under hundreds of MeV/n heavy-ions in space

European Conference on Radiation and Its Effects on Components and Systems (RADECS)
2016 | Conference paper
WOSUID: WOS:000450759400082
Contributors: Zhang, Zhangang; Lei, Zhifeng; En, Yunfei; Liu, Jie
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A flexible and robust soft-error testing system for microelectronic devices and integrated circuits

Nuclear Science and Techniques
2015 | Journal article
WOSUID: WOS:000358109700012
Contributors: Wang Xiao-Hui; Tong Teng; Su Hong; Liu Jie; Zhang Zhan-Gang; Gu Song; Liu Tian-Qi; Kong Jie; Zhao Xing-Wen; Yang Zhen-Lei
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Azimuthal dependence of single-event and multiple-bit upsets in SRAM devices with anisotropic layout

Nuclear Science and Techniques
2015 | Journal article
WOSUID: WOS:000365459200013
Contributors: Zhang Zhan-Gang; Liu Jie; Hou Ming-Dong; Sun You-Mei; Su Hong; Gu Song; Geng Chao; Yao Hui-Jun; Luo Jie; Duan Jing-Lai et al.
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Influence of edge effects on single event upset susceptibility of SOI SRAMs

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
2015 | Journal article
DOI: 10.1016/J.NIMB.2014.10.018
WOSUID: WOS:000347770500044
Contributors: Gu, Song; Liu, Jie; Zhao, Fazhan; Zhang, Zhangang; Bi, Jinshun; Geng, Chao; Hou, Mingdong; Liu, Gang; Liu, Tianqi; Xi, Kai
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Influence of heavy ion irradiation on DC and gate-lag performance of AlGaN/GaN HEMTs

Chinese Physics B
2015 | Journal article
DOI: 10.1088/1674-1056/24/5/056103
WOSUID: WOS:000356528600056
Contributors: Lei Zhi-Feng; Guo Hong-Xia; Zeng Chang; Chen Hui; Wang Yuan-Sheng; Zhang Zhan-Gang
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Monte Carlo Predictions of Proton SEE Cross-Sections from Heavy Ion Test Data

ArXiv
2015 | Journal article
WOSUID: PPRN:22195863
Contributors: Xi, Kai; Geng, Chao; Zhang, Zhan-Gang; Hou, Ming-Dong; Sun, You-Mei; Luo, Jie; Liu, Tian-Qi; Wang, Bin; Ye, Bing; Yin, Ya-Nan et al.
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Single Event Effects in COTS Ferroelectric RAM Technologies

IEEE Radiation Effects Data Workshop (REDW)
2015 | Conference paper
DOI: 10.1109/REDW.2015.7336734
WOSUID: WOS:000377773700027
Contributors: Zhang, Zhangang; Lei, Zhifeng; Yang, Zhenlei; Wang, Xiaohui; Wang, Bin; Liu, Jie; En, Yunfei; Chen, Hui; Li, Bin
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Calculation of single event upset based on Monte Carlo and device simulations

Acta Physica Sinica
2014 | Journal article
DOI: 10.7498/APS.63.196102
WOSUID: WOS:000344616200035
Contributors: Wang Xiao-Han; Guo Hong-Xia; Lei Zhi-Feng; Guo Gang; Zhang Ke-Ying; Gao Li-Juan; Zhang Zhan-Gang
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Peer review (18 reviews for 4 publications/grants)

Review activity for IEEE transactions on nuclear science. (8)
Review activity for Microelectronics and reliability. (5)
Review activity for Nuclear engineering and technology. (2)
Review activity for Nuclear science and techniques. (3)
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