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Works (28)

Physical Insights Into the Drain Current Injection-Induced Device Instabilities in AlGaN/GaN HEMTs

IEEE Transactions on Electron Devices
2024 | Journal article
Contributors: Mehak Ashraf Mir; Vipin Joshi; Rajarshi Roy Chaudhuri; Mohammad Ateeb Munshi; Rasik Rashid Malik; Mayank Shrivastava
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Physical Insights Into the Lattice Temperature Dependent Evolution of Hot Electron Distribution in GaN HEMTs on C-Doped GaN-on-Si

IEEE Transactions on Electron Devices
2024 | Journal article
Contributors: Rajarshi Roy Chaudhuri; Vipin Joshi; Rasik Rashid Malik; Mayank Shrivastava
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Temperature-Dependent ESD Breakdown in AlGaN/GaN HEMTs With Carbon-Doped Buffer

IEEE Transactions on Electron Devices
2024-11 | Journal article
Contributors: Mohammad Ateeb Munshi; Mehak Ashraf Mir; Vipin Joshi; Rajarshi Roy Chaudhuri; Rasik Malik; Mayank Shrivastava
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Impact of Buffer Capacitance-Induced Trap Charging on Electric Field Distribution and Breakdown Voltage of AlGaN/GaN HEMTs on Carbon-Doped GaN-on-Si

IEEE Transactions on Electron Devices
2023 | Journal article
Contributors: Vipin Joshi; Rajarshi Roy Chaudhuri; Sayak Dutta Gupta; Mayank Shrivastava
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Physical Insights Into Electron Trapping Mechanism in the Carbon-Doped GaN Buffer in AlGaN/GaN HEMTs and Its Impact on Dynamic On-Resistance

IEEE Transactions on Electron Devices
2023 | Journal article
Contributors: Vipin Joshi; Rajarshi Roy Chaudhuri; Sayak Dutta Gupta; Mayank Shrivastava
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Reverse Bias Stress-Induced Turn-On Voltage Shift in Recessed AlGaN/GaN Schottky Barrier Diodes

IEEE Transactions on Electron Devices
2023 | Journal article
Contributors: Rasik Rashid Malik; Vipin Joshi; Rajarshi Roy Chaudhuri; Sayak Dutta Gupta; Mayank Shrivastava
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Impact of Channel Electric Field Profile Evolution on Nanosecond Timescale Cyclic Stress-Induced Dynamic R ON Behavior in AlGaN/GaN HEMTs—Part II

IEEE Transactions on Electron Devices
2023-12 | Journal article
Contributors: Rajarshi Roy Chaudhuri; Amratansh Gupta; Vipin Joshi; Rasik Rashid Malik; Sayak Dutta Gupta; Mayank Shrivastava
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Physical Insights Into Nano-Second Time Scale Cyclic Stress Induced Dynamic R on Behavior in AlGaN/GaN HEMTs—Part I

IEEE Transactions on Electron Devices
2023-12 | Journal article
Contributors: Rajarshi Roy Chaudhuri; Amratansh Gupta; Vipin Joshi; Rasik Rashid Malik; Sayak Dutta Gupta; Mayank Shrivastava
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Observations and Physical Insights Into Time-Dependent Hot Electron Current Confinement in AlGaN/GaN HEMTs on C-Doped GaN Buffer

IEEE Transactions on Electron Devices
2022-12 | Journal article
Contributors: Rajarshi Roy Chaudhuri; Vipin Joshi; Sayak Dutta Gupta; Mayank Shrivastava
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Unique Role of Hot-Electron Induced Self-Heating in Determining Gate-Stack Dependent Dynamic R ON of AlGaN/GaN HEMTs Under Semi-on State

IEEE Transactions on Electron Devices
2022-12 | Journal article
Contributors: Sayak Dutta Gupta; Vipin Joshi; Rajarshi Roy Chaudhuri; Mayank Shrivastava
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Interplay of Device Design and Carbon-Doped GaN Buffer Parameters in Determining Dynamic in AlGaN/GaN HEMTs

IEEE Transactions on Electron Devices
2022-11 | Journal article
Contributors: Vipin Joshi; Sayak Dutta Gupta; Rajarshi Roy Chaudhuri; Mayank Shrivastava
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Unique Gate Bias Dependence of Dynamic ON-Resistance in MIS-Gated AlGaN/GaN HEMTs and Its Dependence on Gate Control Over the 2-DEG

IEEE Transactions on Electron Devices
2022-03 | Journal article
Contributors: Sayak Dutta Gupta; Vipin Joshi; Rajarshi Roy Chaudhuri; Mayank Shrivastava
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Novel Surface Passivation Scheme by Using p-Type AlTiO to Mitigate Dynamic ON Resistance Behavior in AlGaN/GaN HEMTs—Part II

IEEE Transactions on Electron Devices
2021-11 | Journal article
Contributors: Sayak Dutta Gupta; Vipin Joshi; Rajarshi Roy Chaudhuri; Mayank Shrivastava
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Part I: Physical Insights Into Dynamic R ON Behavior and a Unique Time-Dependent Critical Stress Voltage in AlGaN/GaN HEMTs

IEEE Transactions on Electron Devices
2021-11 | Journal article
Contributors: Sayak Dutta Gupta; Vipin Joshi; Rajarshi Roy Chaudhuri; Mayank Shrivastava
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On the Channel Hot-Electron’s Interaction With C-Doped GaN Buffer and Resultant Gate Degradation in AlGaN/GaN HEMTs

IEEE Transactions on Electron Devices
2021-10 | Journal article
Contributors: Rajarshi Roy Chaudhuri; Vipin Joshi; Sayak Dutta Gupta; Mayank Shrivastava
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Observations regarding deep-level states causing p-type doping in AlTiO gate and positive threshold voltage shift in AlGaN/GaN high electron mobility transistors

Journal of Applied Physics
2021-07-07 | Journal article
Contributors: Sayak Dutta Gupta; Vipin Joshi; Rajarshi Roy Chaudhuri; Mayank Shrivastava
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Interplay Between Surface and Buffer Traps in Governing Breakdown Characteristics of AlGaN/GaN HEMTs—Part II

IEEE Transactions on Electron Devices
2021-01 | Journal article
Contributors: Vipin Joshi; Sayak Dutta Gupta; Rajarshi Roy Chaudhuri; Mayank Shrivastava
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Physical Insights Into the Impact of Surface Traps on Breakdown Characteristics of AlGaN/GaN HEMTs—Part I

IEEE Transactions on Electron Devices
2021-01 | Journal article
Contributors: Vipin Joshi; Sayak Dutta Gupta; Rajarshi Roy Chaudhuri; Mayank Shrivastava
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Interaction of hot electrons with Carbon doped GaN buffer in AlGaN/GaN HEMTs: Correlation with lateral electric field and device failure

Proceedings of the International Symposium on Power Semiconductor Devices and ICs
2020 | Conference paper
EID:

2-s2.0-85090553497

Part of ISSN: 10636854
Contributors: Chaudhuri, R.R.; Joshi, V.; Gupta, S.D.; Shrivastava, M.
Source: Self-asserted source
Vipin Joshi via Scopus - Elsevier

On the Root Cause of Dynamic on Resistance Behavior in AlGaN/GaN HEMTs

IEEE International Reliability Physics Symposium Proceedings
2020 | Conference paper
EID:

2-s2.0-85088403084

Part of ISSN: 15417026
Contributors: Gupta, S.D.; Joshi, V.; Chaudhuri, R.R.; Kr Singh, A.; Guha, S.; Shrivastava, M.
Source: Self-asserted source
Vipin Joshi via Scopus - Elsevier

UV-Assisted Probing of Deep-Level Interface Traps in GaN MISHEMTs and Their Role in Threshold Voltage Gate Leakage Instabilities

IEEE International Reliability Physics Symposium Proceedings
2019 | Conference paper
EID:

2-s2.0-85066764388

Part of ISSN: 15417026
Contributors: Dutta Gupta, S.; Joshi, V.; Shankar, B.; Shikha, S.; Raghavan, S.; Shrivastava, M.
Source: Self-asserted source
Vipin Joshi via Scopus - Elsevier

Positive Threshold Voltage Shift in AlGaN/GaN HEMTs and E-Mode Operation By ${\mathrm{Al}}_{x}{\mathrm{Ti}}_{1-x}$ O Based Gate Stack Engineering

IEEE Transactions on Electron Devices
2019-06 | Journal article
Contributors: Sayak Dutta Gupta; Ankit Soni; Vipin Joshi; Jeevesh Kumar; Rudrarup Sengupta; Heena Khand; Bhawani Shankar; Nagaboopathy Mohan; Srinivasan Raghavan; Navakanta Bhat et al.
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Part I: Physical Insight Into Carbon-Doping-Induced Delayed Avalanche Action in GaN Buffer in AlGaN/GaN HEMTs

IEEE Transactions on Electron Devices
2019-01 | Journal article
Contributors: Vipin Joshi; Shree Prakash Tiwari; Mayank Shrivastava
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Part II: Proposals to Independently Engineer Donor and Acceptor Trap Concentrations in GaN Buffer for Ultrahigh Breakdown AlGaN/GaN HEMTs

IEEE Transactions on Electron Devices
2019-01 | Journal article
Contributors: Vipin Joshi; Shree Prakash Tiwari; Mayank Shrivastava
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Comprehensive analysis of TIPS-Pentacene: Polymer blend organic field-effect transistor for device and circuit simulation

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Vipin Joshi
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Dependence of avalanche breakdown on surface & buffer traps in AlGaN/GaN HEMTs

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Vipin Joshi
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A Comprehensive Computational Modeling Approach for AlGaN/GaN HEMTs

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Vipin Joshi
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A wedge tunnel FET device for larger tunneling area and improved ON current

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Vipin Joshi
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Peer review (2 reviews for 1 publication/grant)

Review activity for Microelectronics and reliability. (2)