Personal information

No personal information available

Activities

Collapse all

Employment (1)

Institute of Physics of Polish Academy of Sciences : Warszawa, PL

2010-01-04 to present | Dr.
Employment
Source: Self-asserted source
Marta Sobanska

Works (50 of 55)

Items per page:
Page 1 of 2

ZrN nucleation layer provides backside ohmic contact to MBE-grown GaN nanowires

Nanoscale
2025 | Journal article
DOI: 10.1039/D5NR00321K
Contributors: Stanislav Tiagulskyi; Roman Yatskiv; Marta Sobanska; Karol Olszewski; Zbigniew R. Zytkiewicz; Jan Grym
Source: check_circle
Crossref

Enhancing GaN Nanowires Performance Through Partial Coverage with Oxide Shells

Small
2024-11 | Journal article
DOI: 10.1002/smll.202401139
Contributors: Radoslaw Szymon; Eunika Zielony; Marta Sobanska; Tomasz Stachurski; Anna Reszka; Aleksandra Wierzbicka; Sylwia Gieraltowska; Zbigniew R. Zytkiewicz
Source: check_circle
Crossref

Geometrical Selection of GaN Nanowires Grown by Plasma-Assisted MBE on Polycrystalline ZrN Layers

Nanomaterials
2023-09-19 | Journal article
DOI: 10.3390/nano13182587
Contributors: Karol Olszewski; Marta Sobanska; Vladimir G. Dubrovskii; Egor D. Leshchenko; Aleksandra Wierzbicka; Zbigniew R. Zytkiewicz
Source: check_circle
Crossref
grade
Preferred source (of 2)‎

Geometrical Selection of GaN Nanowires Grown by Plasma-Assisted MBE on Polycrystalline ZrN Layers

2023-08-30 | Preprint
DOI: 10.20944/preprints202308.1958.v1
Contributors: Karol Olszewski; Marta Sobanska; Vladimir G. Dubrovskii; Egor D. Leshchenko; Aleksandra Wierzbicka; Zbigniew R. Zytkiewicz
Source: check_circle
Crossref
grade
Preferred source (of 2)‎

Thermal Instability of Gold Thin Films

Coatings
2023-07-25 | Journal article
DOI: 10.3390/coatings13081306
Contributors: Marcin Łapiński; Piotr Dróżdż; Mariusz Gołębiowski; Piotr Okoczuk; Jakub Karczewski; Marta Sobanska; Aleksiej Pietruczik; Zbigniew R. Zytkiewicz; Ryszard Zdyb; Wojciech Sadowski et al.
Source: check_circle
Crossref
grade
Preferred source (of 2)‎

Origin of Surface Barrier Temperature Dependence for the Polar GaN Surface

ACS Applied Electronic Materials
2022-10-04 | Journal article
DOI: 10.1021/acsaelm.2c01016
Part of ISSN: 2637-6113
Part of ISSN: 2637-6113
Contributors: Marta Sobanska; Ewelina Zdanowicz; Artur Herman; Marta Sobanska; Zbigniew Zytkiewicz; Wojciech Olszewski; Detlef Hommel; Robert Kudrawiec
Source: Self-asserted source
Marta Sobanska

Alternative Route of Fracturing in GaN Films Formed by Nanowires Coalescence on Si Substrate

Crystal Growth & Design
2022-05-04 | Journal article
DOI: 10.1021/acs.cgd.2c00104
Part of ISSN: 1528-7483
Part of ISSN: 1528-7505
Contributors: Marta Sobanska; Serhii Kryvyi; Hryhorii Stanchu; Oleksii Liubchenko; Nadiia Safriuk-Romanenko; Andrian Kuchuk; Aleksandra Wierzbicka; Marta Sobanska; Anna Reszka; Zbigniew Zytkiewicz et al.
Source: Self-asserted source
Marta Sobanska

Strain control in graphene on GaN nanowires: Towards pseudomagnetic field engineering

Carbon
2022-01 | Journal article
DOI: 10.1016/j.carbon.2021.10.012
Contributors: Jakub Kierdaszuk; Paweł Dąbrowski; Maciej Rogala; Paweł Krukowski; Aleksandra Przewłoka; Aleksandra Krajewska; Wawrzyniec Kaszub; Marta Sobanska; Zbigniew R. Zytkiewicz; Vitaly Z. Zubialevich et al.
Source: check_circle
Crossref

Investigating the secondary electron emission of nanomaterials induced by a high resolution proton beam

physica status solidi (b)
2022-01-25 | Journal article
DOI: 10.1002/pssb.202100445
Part of ISSN: 0370-1972
Part of ISSN: 1521-3951
Source: Self-asserted source
Marta Sobanska

Properties of graphene deposited on GaN nanowires: influence of nanowire roughness, self-induced nanogating and defects

Beilstein Journal of Nanotechnology
2021-06-22 | Journal article
DOI: 10.3762/bjnano.12.47
Contributors: Jakub Kierdaszuk; Piotr Kaźmierczak; Justyna Grzonka; Aleksandra Krajewska; Aleksandra Przewłoka; Wawrzyniec Kaszub; Zbigniew R Zytkiewicz; Marta Sobanska; Maria Kamińska; Andrzej Wysmołek et al.
Source: check_circle
Crossref

Chemical bonding of nitrogen formed by nitridation of crystalline and amorphous aluminum oxide studied by X-ray photoelectron spectroscopy

RSC Advances
2020 | Journal article
DOI: 10.1039/D0RA05104G
Contributors: K. Lawniczak-Jablonska; Z. R. Zytkiewicz; S. Gieraltowska; M. Sobanska; P. Kuzmiuk; K. Klosek
Source: check_circle
Crossref

Influence of Growth Polarity Switching on the Optical and Electrical Properties of GaN/AlGaN Nanowire LEDs

Electronics
2020-12-29 | Journal article
DOI: 10.3390/electronics10010045
Contributors: Anna Reszka; Krzysztof P. Korona; Stanislav Tiagulskyi; Henryk Turski; Uwe Jahn; Slawomir Kret; Rafał Bożek; Marta Sobanska; Zbigniew R. Zytkiewicz; Bogdan J. Kowalski
Source: check_circle
Crossref
grade
Preferred source (of 2)‎

Defect-related photoluminescence and photoluminescence excitation as a method to study the excitonic bandgap of AlN epitaxial layers: Experimental and ab initio analysis

Applied Physics Letters
2020-12-07 | Journal article
DOI: 10.1063/5.0027743
Contributors: Agata Kaminska; Kamil Koronski; Pawel Strak; Aleksandra Wierzbicka; Marta Sobanska; Kamil Klosek; Dmitrii V. Nechaev; Vladimir Pankratov; Kirill Chernenko; Stanislaw Krukowski et al.
Source: check_circle
Crossref

Determination of Fermi Level Position at the Graphene/GaN Interface Using Electromodulation Spectroscopy

Advanced Materials Interfaces
2020-11 | Journal article
DOI: 10.1002/admi.202001220
Part of ISSN: 2196-7350
Part of ISSN: 2196-7350
Source: Self-asserted source
Marta Sobanska

Influence of Si Substrate Preparation Procedure on Polarity of Self-Assembled GaN Nanowires on Si(111): Kelvin Probe Force Microscopy Studies

Electronics
2020-11-13 | Journal article
DOI: 10.3390/electronics9111904
Contributors: Marta Sobanska; Núria Garro; Kamil Klosek; Ana Cros; Zbigniew R. Zytkiewicz
Source: check_circle
Crossref
grade
Preferred source (of 2)‎

GaN Nanowire Array for Charge Transfer in Hybrid GaN/P3HT:PC71BM Photovoltaic Heterostructure Fabricated on Silicon

Materials
2020-10-24 | Journal article
DOI: 10.3390/ma13214755
Contributors: Giorgi Tchutchulashvili; Sergij Chusnutdinow; Wojciech Mech; Krzysztof P. Korona; Anna Reszka; Marta Sobanska; Zbigniew R. Zytkiewicz; Wojciech Sadowski
Source: check_circle
Crossref
grade
Preferred source (of 2)‎

Surface Diffusion of Gallium as the Origin of Inhomogeneity in Selective Area Growth of GaN Nanowires on AlxOy Nucleation Stripes

Crystal Growth & Design
2020-07-01 | Journal article
DOI: 10.1021/acs.cgd.0c00530
Part of ISSN: 1528-7483
Part of ISSN: 1528-7505
Source: Self-asserted source
Marta Sobanska

Selective area formation of GaN nanowires on GaN substrates by the use of amorphous Al x O y nucleation layer

Nanotechnology
2020-05-01 | Journal article
DOI: 10.1088/1361-6528/ab6bf2
Part of ISSN: 0957-4484
Part of ISSN: 1361-6528
Source: Self-asserted source
Marta Sobanska
grade
Preferred source (of 2)‎

Hybrid P3HT: PCBM/GaN nanowire/Si cascade heterojunction for photovoltaic application

Journal of Nanoparticle Research
2020-04 | Journal article
DOI: 10.1007/s11051-020-04797-8
Part of ISSN: 1388-0764
Part of ISSN: 1572-896X
Source: Self-asserted source
Marta Sobanska

Compositionally Graded AlGaN Nanostructures: Strain Distribution and X-ray Diffraction Reciprocal Space Mapping

Crystal Growth & Design
2020-03-04 | Journal article
DOI: 10.1021/acs.cgd.9b01273
Part of ISSN: 1528-7483
Part of ISSN: 1528-7505
Source: Self-asserted source
Marta Sobanska

Erratum: Comprehensive analysis of the self-assembled formation of GaN nanowires on amorphous AlxOy: in situ quadrupole mass spectrometry studies (2019 Nanotechnology 30 154002)

Nanotechnology
2019-08-09 | Journal article
DOI: 10.1088/1361-6528/ab0d1a
Part of ISSN: 0957-4484
Part of ISSN: 1361-6528
Source: Self-asserted source
Marta Sobanska

Surface-enhanced Raman scattering in graphene deposited on Al Ga1−N/GaN axial heterostructure nanowires

Applied Surface Science
2019-05 | Journal article
DOI: 10.1016/j.apsusc.2019.01.040
Part of ISSN: 0169-4332
Source: Self-asserted source
Marta Sobanska

Comprehensive analysis of the self-assembled formation of GaN nanowires on amorphous Al x O y : in situ quadrupole mass spectrometry studies

Nanotechnology
2019-04-12 | Journal article
DOI: 10.1088/1361-6528/aafe17
Part of ISSN: 0957-4484
Part of ISSN: 1361-6528
Source: Self-asserted source
Marta Sobanska
grade
Preferred source (of 2)‎

Experimental and theoretical analysis of influence of barrier composition on optical properties of GaN/AlGaN multi-quantum wells: Temperature- and pressure-dependent photoluminescence studies

Journal of Alloys and Compounds
2018-11 | Journal article
DOI: 10.1016/j.jallcom.2018.08.050
Part of ISSN: 0925-8388
Source: Self-asserted source
Marta Sobanska

Reflectance and fast polarization dynamics of a GaN/Si nanowire ensemble

Journal of Physics: Condensed Matter
2018-08-08 | Journal article
DOI: 10.1088/1361-648x/aacedd
Part of ISSN: 0953-8984
Part of ISSN: 1361-648X
Source: Self-asserted source
Marta Sobanska

Surface-enhanced Raman scattering of graphene caused by self-induced nanogating by GaN nanowire array

Carbon
2018-03 | Journal article
DOI: 10.1016/j.carbon.2017.11.061
Part of ISSN: 0008-6223
Source: Self-asserted source
Marta Sobanska

Arrangement of GaN nanowires on Si(001) substrates studied by X-ray diffraction: Importance of silicon nitride interlayer

Applied Surface Science
2017-12 | Journal article
DOI: 10.1016/j.apsusc.2017.07.075
Part of ISSN: 0169-4332
Source: Self-asserted source
Marta Sobanska

Contactless electroreflectance studies of the Fermi level position at the air/GaN interface: Bistable nature of the Ga-polar surface

Applied Surface Science
2017-02 | Journal article
DOI: 10.1016/j.apsusc.2016.12.013
Part of ISSN: 0169-4332
Source: Self-asserted source
Marta Sobanska

Analysis of Incubation Times for the Self-Induced Formation of GaN Nanowires: Influence of the Substrate on the Nucleation Mechanism

Crystal Growth & Design
2016-12-07 | Journal article
DOI: 10.1021/acs.cgd.6b01396
Part of ISSN: 1528-7483
Part of ISSN: 1528-7505
Source: Self-asserted source
Marta Sobanska

An influence of the local strain on cathodoluminescence of GaN/AlxGa1−xN nanowire structures

Journal of Applied Physics
2016-11-21 | Journal article
DOI: 10.1063/1.4968004
Part of ISSN: 0021-8979
Part of ISSN: 1089-7550
Source: Self-asserted source
Marta Sobanska

Engineering of electric field distribution in GaN(cap)/AlGaN/GaN heterostructures: theoretical and experimental studies

Journal of Physics D: Applied Physics
2016-09-01 | Journal article
DOI: 10.1088/0022-3727/49/34/345106
Part of ISSN: 0022-3727
Part of ISSN: 1361-6463
Source: Self-asserted source
Marta Sobanska

Self-assembled growth of GaN nanowires on amorphous AlxOy: from nucleation to the formation of dense nanowire ensembles

Nanotechnology
2016-08-12 | Journal article
DOI: 10.1088/0957-4484/27/32/325601
Part of ISSN: 0957-4484
Part of ISSN: 1361-6528
Source: Self-asserted source
Marta Sobanska

High-resolution X-ray diffraction analysis of strain distribution in GaN nanowires on Si(111) substrate

Nanoscale Research Letters
2015-12 | Journal article
DOI: 10.1186/s11671-015-0766-x
Part of ISSN: 1556-276X
Source: Self-asserted source
Marta Sobanska

Structural, electrical, and optical characterization of coalescentp-nGaN nanowires grown by molecular beam epitaxy

Journal of Applied Physics
2015-12-14 | Journal article
DOI: 10.1063/1.4937448
Part of ISSN: 0021-8979
Part of ISSN: 1089-7550
Source: Self-asserted source
Marta Sobanska

Kinetics of self-induced nucleation and optical properties of GaN nanowires grown by plasma-assisted molecular beam epitaxy on amorphous AlxOy

Journal of Applied Physics
2015-11-14 | Journal article
DOI: 10.1063/1.4935522
Part of ISSN: 0021-8979
Part of ISSN: 1089-7550
Source: Self-asserted source
Marta Sobanska

Dynamics of stacking faults luminescence in GaN/Si nanowires

Journal of Luminescence
2014-11 | Journal article
DOI: 10.1016/j.jlumin.2014.06.061
Part of ISSN: 0022-2313
Source: Self-asserted source
Marta Sobanska

Arrangement of GaN nanowires grown by plasma-assisted molecular beam epitaxy on silicon substrates with amorphous Al2O3 buffers

Journal of Crystal Growth
2014-09 | Journal article
DOI: 10.1016/j.jcrysgro.2014.01.007
Part of ISSN: 0022-0248
Source: Self-asserted source
Marta Sobanska

Measurements of strain in AlGaN/GaN HEMT structures grown by plasma assisted molecular beam epitaxy

Journal of Crystal Growth
2014-09 | Journal article
DOI: 10.1016/j.jcrysgro.2014.01.061
Part of ISSN: 0022-0248
Source: Self-asserted source
Marta Sobanska

Modelling of X-ray diffraction curves for GaN nanowires on Si(1 1 1)

Journal of Crystal Growth
2014-09 | Journal article
DOI: 10.1016/j.jcrysgro.2014.01.042
Part of ISSN: 0022-0248
Source: Self-asserted source
Marta Sobanska

Growth by molecular beam epitaxy and properties of inclined GaN nanowires on Si(001) substrate

Nanotechnology
2014-04-04 | Journal article
DOI: 10.1088/0957-4484/25/13/135610
Part of ISSN: 0957-4484
Part of ISSN: 1361-6528
Source: Self-asserted source
Marta Sobanska

Enhanced catalyst-free nucleation of GaN nanowires on amorphous Al2O3 by plasma-assisted molecular beam epitaxy

Journal of Applied Physics
2014-01-28 | Journal article
DOI: 10.1063/1.4863456
Part of ISSN: 0021-8979
Part of ISSN: 1089-7550
Source: Self-asserted source
Marta Sobanska

Influence of AlN layer on electric field distribution in GaN/AlGaN/GaN transistor heterostructures

Journal of Applied Physics
2013-10-28 | Journal article
DOI: 10.1063/1.4827376
Part of ISSN: 0021-8979
Part of ISSN: 1089-7550
Source: Self-asserted source
Marta Sobanska

Electrical characterization of ensemble of GaN nanowires grown by the molecular beam epitaxy technique

Applied Physics Letters
2013-08-26 | Journal article
DOI: 10.1063/1.4819731
Part of ISSN: 0003-6951
Part of ISSN: 1077-3118
Source: Self-asserted source
Marta Sobanska

The Growth and Micro-Raman Characterization of GaN Nanowires

Sensor Letters
2013-08-01 | Journal article
DOI: 10.1166/sl.2013.2833
Part of ISSN: 1546-198X
Source: Self-asserted source
Marta Sobanska

Optimization of nitrogen plasma source parameters by measurements of emitted light intensity for growth of GaN by molecular beam epitaxy

Thin Solid Films
2013-05 | Journal article
DOI: 10.1016/j.tsf.2013.02.013
Part of ISSN: 0040-6090
Source: Self-asserted source
Marta Sobanska

Structural and optical characterization of GaN nanowires

Journal of Applied Physics
2013-05-28 | Journal article
DOI: 10.1063/1.4808097
Part of ISSN: 0021-8979
Part of ISSN: 1089-7550
Source: Self-asserted source
Marta Sobanska

Influence of substrate nitridation temperature on epitaxial alignment of GaN nanowires to Si(111) substrate

Nanotechnology
2013-01-25 | Journal article
DOI: 10.1088/0957-4484/24/3/035703
Part of ISSN: 0957-4484
Part of ISSN: 1361-6528
Source: Self-asserted source
Marta Sobanska

P2.4.18 MBE growth of GaN nanowires on Si(111) substrates for gas sensor applications

International Meeting on Chemical Sensors - IMCS 2012
2012 | Conference paper
DOI: 10.5162/imcs2012/p2.4.18
Source: Self-asserted source
Marta Sobanska

Photoluminescence Dynamics of GaN/Si Nanowires

Acta Physica Polonica A
2012-12 | Journal article
DOI: 10.12693/aphyspola.122.1001
Part of ISSN: 0587-4246
Part of ISSN: 1898-794X
Source: Self-asserted source
Marta Sobanska

Influence of Substrate on Crystallographic Quality of AlGaN/GaN HEMT Structures Grown by Plasma-Assisted MBE

Acta Physica Polonica A
2012-04 | Journal article
DOI: 10.12693/aphyspola.121.899
Part of ISSN: 0587-4246
Part of ISSN: 1898-794X
Source: Self-asserted source
Marta Sobanska
Items per page:
Page 1 of 2

Peer review (2 reviews for 1 publication/grant)

Review activity for Journal of crystal growth. (2)
How many people are using ORCID?