Personal information

semiconductor, flash memory, mosfet, algorithm
South Korea

Activities

Employment (1)

SK Hynix: ICHEON, KR

2011-02-11 to present
Employment
Source: Self-asserted source
minsang park

Education and qualifications (1)

Pohang University of Science and Technology: Pohang, KR

2006-01-02 to 2011-02-10 | DR (Electrical & Electronics engineering)
Education
Source: Self-asserted source
minsang park

Works (13)

Enhancement of ISPP Efficiency Using Neural Network-Based Optimization of 3-D NAND Cell

IEEE Transactions on Electron Devices
2023 | Journal article
Contributors: Kyeongrae Cho; Hyeok Yun; Kihoon Nam; Chanyang Park; Hyundong Jang; Jun-Sik Yoon; Hyun-Chul Choi; Min Sang Park; Rock-Hyun Baek
Source: check_circle
Crossref

Holistic Optimization of Trap Distribution for Performance/Reliability in 3-D NAND Flash Using Machine Learning

IEEE Access
2023 | Journal article
Contributors: Kihoon Nam; Chanyang Park; Hyeok Yun; Jun-Sik Yoon; Hyundong Jang; Kyeongrae Cho; Min Sang Park; Hyun-Chul Choi; Rock-Hyun Baek
Source: check_circle
Crossref

Optimization of Process Parameters on Short-Term Retention for Charge-Trapping 3-D NAND Flash Memories Using Novel Neural Networks Approach

IEEE Transactions on Electron Devices
2023-08 | Journal article
Contributors: Hyundong Jang; Kihoon Nam; Hyeok Yun; Kyeongrae Cho; Seungjoon Eom; Min Sang Park; Rock-Hyun Baek
Source: check_circle
Crossref

Investigation of Program Efficiency Overshoot in 3D Vertical Channel NAND Flash with Randomly Distributed Traps

Nanomaterials
2023-04-24 | Journal article
Contributors: Chanyang Park; Jun-Sik Yoon; Kihoon Nam; Hyundong Jang; Minsang Park; Rock-Hyun Baek
Source: check_circle
Crossref
grade
Preferred source (of 2)‎

Bi-Directional Long Short-Term Memory Neural Network Modeling of Data Retention Characterization in 3-D Triple-Level Cell NAND Flash Memory

IEEE Transactions on Electron Devices
2022-08 | Journal article
Contributors: Hyundong Jang; Chanyang Park; Kihoon Nam; Hyeok Yun; Kyeongrae Cho; Jun-Sik Yoon; Hyun-Chul Choi; Ho-Jung Kang; Min Sang Park; Jaesung Sim et al.
Source: check_circle
Crossref

Channel Thickness and Grain Size Engineering for Improvement of Variability and Performance in 3-D NAND Flash Memory

IEEE Transactions on Electron Devices
2022-07 | Journal article
Contributors: Kihoon Nam; Chanyang Park; Jun-Sik Yoon; Giho Yang; Min Sang Park; Rock-Hyun Baek
Source: check_circle
Crossref

Optimal Energetic-Trap Distribution of Nano-Scaled Charge Trap Nitride for Wider <i>V<sub>th</sub></i> Window in 3D NAND Flash Using a Machine-Learning Method

Nanomaterials
2022-05 | Journal article | Author
Contributors: Kihoon Nam; Chanyang Park; JunSik Yoon; Hyeok Yun; Hyundong Jang; Kyeongrae Cho; Ho-Jung Kang; minsang park; Jaesung Sim; Hyun-Chul Choi et al.
Source: check_circle
Multidisciplinary Digital Publishing Institute
grade
Preferred source (of 2)‎

Reliability study of methods to suppress boron transient enhanced diffusion in high-k/metal gate Si/SiGe channel pMOSFETs

Microelectronic Engineering
2013-12 | Journal article
Part of ISSN: 0167-9317
Source: Self-asserted source
minsang park

Reliability properties in sub-50nm high performance high-k/metal gate stacks SiGe pMOSFETs

2010 IEEE Nanotechnology Materials and Devices Conference
2010-10 | Conference paper
Source: Self-asserted source
minsang park

The Effect of a Si Capping Layer on RF Characteristics of High-$k$/Metal Gate SiGe Channel pMOSFETs

IEEE Electron Device Letters
2010-10 | Journal article
Part of ISSN: 0741-3106
Source: Self-asserted source
minsang park

Impact of dipole-induced dielectric relaxation on high-frequency performance in La-incorporated HfSiON/metal gate nMOSFET

2009 IEEE International Electron Devices Meeting (IEDM)
2009-12 | Conference paper
Contributors: G. B. Choi; H. C. Sagong; K. T. Lee; M. S. Park; H. S. Choi; S. H. Song; R. H. Baek; C. H. Park; S. H. Lee; J. S. Lee et al.
Source: Self-asserted source
minsang park

A Study of Strain Engineering Using CESL Stressor on Reliability Comparing Effect of Intrinsic Mechanical Stress

IEEE Electron Device Letters
2009-07 | Journal article
Part of ISSN: 0741-3106
Part of ISSN: 1558-0563
Source: Self-asserted source
minsang park

High pressure hydrogen annealing effect of CESL nitride stressor MOSFETs with metal gate/high-k dielectric on the performance and reliability

2009 IEEE Nanotechnology Materials and Devices Conference
2009-06 | Conference paper
Source: Self-asserted source
minsang park