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Chinese Academy of Sciences: Beijing, Beijing, CN

2011-09-01 to present | Professor (Institute of Semiconductors)
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Lianshan Wang

Works (50 of 97)

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Measuring valence band offsets in ReSe2/(0001)GaN, ReSe2/(11-22)GaN, and ReSe2/(11-20)GaN heterostructures

Semiconductor Science and Technology
2025-03-31 | Journal article
DOI: 10.1088/1361-6641/adb881
Contributors: Jingbo Lin; Wanting Wei; Guijuan Zhao; Lianshan Wang; Xingliang Wang; Xiurui Lv; Zhiyuan Hao; Guipeng Liu
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Effects of pressure on GaN growth in a specific warm-wall MOCVD reactor

CrystEngComm
2023 | Journal article
DOI: 10.1039/D2CE01678H
WOSUID: WOS:000919736300001
Contributors: Niu, Huidan; Yao, Weizhen; Yang, Shaoyan; Liu, Xianglin; Chen, Qingqing; Wang, Lianshan; Wang, Huanhua; Wang, Zhanguo
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Structural, Surface and Optical Studies of m- and c-Face AlN Crystals Grown by Physical Vapor Transport Method

Materials
2023 | Journal article
DOI: 10.3390/MA16051925
WOSUID: WOS:000947140000001
Contributors: Zhang, Shuping; Yang, Hong; Wang, Lianshan; Cheng, Hongjuan; Lu, Haixia; Yang, Yanlian; Wan, Lingyu; Xu, Gu; Feng, Zhe Chuan; Klein, Benjamin et al.
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Comparative investigation of semipolar (11–22) GaN grown on patterned (113) Si with different V/III ratios via MOCVD

Semiconductor Science and Technology
2023-03-01 | Journal article
DOI: 10.1088/1361-6641/acb6ad
Contributors: Bangyao Mao; Shu’an Xing; Guijuan Zhao; Lianshan Wang; Ning Zhang; Hailong Du; Guipeng Liu
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Anisotropic Strain Relaxation in Semipolar (11(2)over-bar2) InGaN/GaN Superlattice Relaxed Templates

Nanomaterials
2022 | Journal article
DOI: 10.3390/NANO12173007
WOSUID: WOS:000851672000001
Contributors: Li, Wenlong; Wang, Lianshan; Chai, Ruohao; Wen, Ling; Wang, Zhen; Guo, Wangguo; Wang, Huanhua; Yang, Shaoyan
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Carrier distribution characteristics of AlGaN-based ultraviolet light-emitting diodes at elevated temperatures

Journal of Materials Science: Materials in Electronics
2022 | Journal article
DOI: 10.1007/S10854-022-08621-Y
WOSUID: WOS:000819888200002
Contributors: Chen, Zhiqiang; Deng, Shaodong; Li, Min; Su, Mengwei; Zhu, Xinglin; Wang, Yukun; Chen, Ziqian; Deng, Jianyu; Wang, Lianshan; Sun, Wenhong
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The same band alignment of two hybrid 2D/3D vertical heterojunctions formed by combining monolayer MoS2 with semi-polar (11-22) GaN and c-plane (0001) GaN

Applied Surface Science
2022 | Journal article
DOI: 10.1016/J.APSUSC.2022.153965
WOSUID: WOS:000817766500005
Contributors: Xing, Shuan; Zhao, Guijuan; Mao, Bangyao; Huang, Heyuan; Wang, Lianshan; Li, Xunshuan; Yang, Wenge; Liu, Guipeng; Yang, Jianhong
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MOCVD growth of ZrN thin films on GaN/Si templates and the effect of substrate temperature on growth mode, stress state, and electrical properties

Journal of Physics D: Applied Physics
2022-10-06 | Journal article
DOI: 10.1088/1361-6463/ac8205
Contributors: Qingqing Chen; Shaoyan Yang; Chengming Li; Weizhen Yao; Xianglin Liu; Huidan Niu; Rui Yang; Huijie Li; Hongyuan Wei; Lianshan Wang et al.
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The influence of high-temperature nitridation process on the crystalline quality of semipolar (112‾2) GaN epitaxial films

Current Applied Physics
2022-07 | Journal article
DOI: 10.1016/j.cap.2022.03.020
Contributors: Wenlong Li; Lianshan Wang; Ruohao Chai; Ling Wen; Haixia Lu; Huanhua Wang; Shaoyan Yang; Wenhong Sun
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A comparative investigation of the optical properties of polar and semipolar GaN epi-films grown by metalorganic chemical vapor deposition

Semiconductor Science and Technology
2022-06-01 | Journal article
DOI: 10.1088/1361-6641/ac696f
Contributors: Haixia Lu; Lianshan Wang; Yao Liu; Shuping Zhang; Yanlian Yang; Vishal Saravade; Zhe Chuan Feng; Benjamin Klein; Ian T Ferguson; Lingyu Wan et al.
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Raman spectra of semi-polar (11-22) InGaN thick films

Vibrational Spectroscopy
2022-03 | Journal article
DOI: 10.1016/j.vibspec.2022.103357
Contributors: Ruohao Chai; Lianshan Wang; Ling Wen; Wenlong Li; Shuping Zhang; Wenwang Wei; Wenhong Sun; Shaoyan Yang
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Stress engineering for reducing the injection current induced blue shift in InGaN-based red light-emitting diodes

CrystEngComm
2021 | Journal article
DOI: 10.1039/D0CE01769H
WOSUID: WOS:000634446300003
Contributors: Yao, Weizhen; Wang, Lianshan; Meng, Yulin; Yang, Shaoyan; Liu, Xianglin; Niu, Huidan; Wang, Zhanguo
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Wet etching of semi-polar (11-22) GaN on m-sapphire by different methods

Journal of Crystal Growth
2021 | Journal article
DOI: 10.1016/J.JCRYSGRO.2021.126200
WOSUID: WOS:000679960200004
Contributors: Wen, Ling; Wang, Lianshan; Chai, Ruohao; Li, Wenlong; Yang, Shaoyan
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Analysis of growth rate and crystal quality of AlN epilayers by flow-modulated metal organic chemical vapor deposition

Superlattices and Microstructures
2020 | Journal article
DOI: 10.1016/J.SPMI.2019.106336
WOSUID: WOS:000508745000009
Contributors: Li, Fangzheng; Wang, Lianshan; Yao, Weizhen; Meng, Yulin; Yang, Shaoyan; Wang, Zhanguo
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Investigation of coherency stress-induced phase separation in AlN/AlxGa1-xN superlattices grown on sapphire substrates

CrystEngComm
2020 | Journal article
DOI: 10.1039/D0CE00147C
WOSUID: WOS:000536772800014
Contributors: Yao, Weizhen; Li, Fangzheng; Wang, Lianshan; Liu, Sheng; Wei, Hongyuan; Yang, Shaoyan; Wang, Zhanguo
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Effect of C-doped GaN film thickness on the structural and electrical properties of AlGaN/GaN-based high electron mobility transistors

Semiconductor Science and Technology
2019 | Journal article
DOI: 10.1088/1361-6641/AB4B01
WOSUID: WOS:000517807300002
Contributors: Yao, Weizhen; Wang, Lianshan; Li, Fangzheng; Meng, Yulin; Yang, Shaoyan; Wang, Zhanguo
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Growth and characterization of amber light-emitting diodes with dual-wavelength InGaN/GaN multiple-quantum-well structures

Materials Research Express
2019 | Journal article
DOI: 10.1088/2053-1591/AB256D
WOSUID: WOS:000470892300002
Contributors: Meng, Yulin; Wang, Lianshan; Li, Fangzheng; Zhao, Guijuan; Yao, Weizhen; Yang, Shaoyan; Wang, Zhanguo
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Impact of Cone-Shape-Patterned Sapphire Substrate and Temperature on the Epitaxial Growth of p-GaN via MOCVD

Physica Status Solidi (a)
2019 | Journal article
DOI: 10.1002/PSSA.201900026
WOSUID: WOS:000478603600008
Contributors: Yao, Weizhen; Wang, Lianshan; Li, Fangzheng; Meng, Yulin; Yang, Shaoyan; Wang, Zhanguo
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Comparative Investigation of Semipolar (11-22) GaN Layers on m-Plane Sapphire with Different Nucleation Layers

Journal of Nanoscience and Nanotechnology
2018 | Journal article
DOI: 10.1166/JNN.2018.16074
WOSUID: WOS:000443946600019
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Measurement of semi-polar (11-22) plane AlN/GaN heterojunction band offsets by X-ray photoelectron spectroscopy

Applied Physics A Solids and Surfaces
2018 | Journal article
DOI: 10.1007/S00339-018-1561-1
WOSUID: WOS:000424515500060
Contributors: Zhao, Guijuan; Li, Huijie; Wang, Lianshan; Meng, Yulin; Li, Fangzheng; Wei, Hongyuan; Yang, Shaoyan; Wang, Zhanguo
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Red Emission of InGaN/GaN Multiple-Quantum-Well Light-Emitting Diode Structures with Indium-Rich Clusters

Physica Status Solidi (a)
2018 | Journal article
DOI: 10.1002/PSSA.201800455
WOSUID: WOS:000452297400006
Contributors: Meng, Yulin; Wang, Lianshan; Zhao, Guijuan; Li, Fangzheng; Li, Huijie; Yang, Shaoyan; Wang, Zhanguo
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Structural and optical properties of semi-polar (11-22) InGaN/GaN green light-emitting diode structure

Applied Physics Letters
2018 | Journal article
DOI: 10.1063/1.4997319
WOSUID: WOS:000424053600025
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The Residual Stress and Al Incorporation of AlGaN Epilayers by Metalorganic Chemical Vapor Deposition

Journal of Nanoscience and Nanotechnology
2018 | Journal article
DOI: 10.1166/JNN.2018.16055
WOSUID: WOS:000443946600026
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Anisotropically biaxial strain in non-polar (112–0) plane In x Ga1−x N/GaN layers investigated by X-ray reciprocal space mapping

Scientific Reports
2017 | Journal article
DOI: 10.1038/S41598-017-04854-8
WOSUID: WOS:000404618400011
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Growth and characterization of AlN epilayers using pulsed metal organic chemical vapor deposition

Chinese Physics B
2017 | Journal article
DOI: 10.1088/1674-1056/26/7/078102
WOSUID: WOS:000405133100002
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Performance enhancement of AlGaN-based ultraviolet light-emitting diodes by inserting the last quantum well into electron blocking layer

Superlattices and Microstructures
2017 | Journal article
DOI: 10.1016/J.SPMI.2017.08.009
WOSUID: WOS:000413391500038
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Aluminum incorporation efficiencies in <i>A</i> - and <i>C</i> -plane AlGaN grown by MOVPE

Chinese Physics B
2016 | Journal article
DOI: 10.1088/1674-1056/25/4/048105
WOSUID: WOS:000375662600066
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Anisotropic structural and optical properties of semi-polar (11–22) GaN grown on m-plane sapphire using double AlN buffer layers

Scientific Reports
2016 | Journal article
DOI: 10.1038/SREP20787
WOSUID: WOS:000369745600002
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Growth of Well-Aligned InN Nanorods on Amorphous Glass Substrates

Nanoscale Research Letters
2016 | Journal article
DOI: 10.1186/S11671-016-1482-X
WOSUID: WOS:000376941900001
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The immiscibility of InAlN ternary alloy

Scientific Reports
2016 | Journal article
DOI: 10.1038/SREP26600
WOSUID: WOS:000376494500001
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Effect of the thickness of InGaN interlayer on <i>a</i> -plane GaN epilayer

Chinese Physics B
2015 | Journal article
DOI: 10.1088/1674-1056/24/2/026802
WOSUID: WOS:000350829700059
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Theoretical study of the anisotropic electron scattering by steps in vicinal AlGaN/GaN heterostructures

Physica E: Low-dimensional Systems and Nanostructures
2015 | Journal article
DOI: 10.1016/J.PHYSE.2014.10.022
WOSUID: WOS:000346552300017
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Anisotropic scattering effect of the inclined misfit dislocation on the two-dimensional electron gas in Al(In)GaN/GaN heterostructures

Journal of Applied Physics
2014 | Journal article
DOI: 10.1063/1.4862803
WOSUID: WOS:000331210800049
Contributors: Jin, Dong-Dong; Wang, Lian-shan; Yang, Shao-Yan; Zhang, Liu-Wan; Li, Hui-jie; Zhang, Heng; Wang, Jian-xia; Xiang, Ruo-fei; Wei, Hong-yuan; Jiao, Chun-mei et al.
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Competitive growth mechanisms of AlN on Si (111) by MOVPE

Scientific Reports
2014 | Journal article
DOI: 10.1038/SREP06416
WOSUID: WOS:000341942300005
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Effects of V/III ratio on a-plane GaN epilayers with an InGaN interlayer

Chinese Physics B
2014 | Journal article
DOI: 10.1088/1674-1056/23/2/026801
WOSUID: WOS:000332104800067
Contributors: Wang Jian-Xia; Wang Lian-Shan; Yang Shao-Yan; Li Hui-Jie; Zhao Gui-Juan; Zhang Heng; Wei Hong-Yuan; Jiao Chun-Mei; Zhu Qin-Sheng; Wang Zhan-Guo
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Morphology and structure controlled growth of one-dimensional AlN nanorod arrays by hydride vapor phase epitaxy

RSC Advances
2014 | Journal article
DOI: 10.1039/C4RA09590A
WOSUID: WOS:000344600400096
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Single-crystalline GaN nanotube arrays grown on c-Al2O3 substrates using InN nanorods as templates

Journal of Crystal Growth
2014 | Journal article
DOI: 10.1016/J.JCRYSGRO.2013.11.066
WOSUID: WOS:000335768600001
Contributors: Li, Huijie; Liu, Changbo; Liu, Guipeng; Wei, Hongyuan; Jiao, Chunmei; Wang, Jianxia; Zhang, Heng; Jin, Dong Dong; Feng, Yuxia; Yang, Shaoyan et al.
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Study of the one dimensional electron gas arrays confined by steps in vicinal GaN/AlGaN heterointerfaces

Journal of Applied Physics
2014 | Journal article
DOI: 10.1063/1.4878918
WOSUID: WOS:000336920200031
Contributors: Li, Huijie; Zhao, Guijuan; Liu, Guipeng; Wei, Hongyuan; Jiao, Chunmei; Yang, Shaoyan; Wang, Lianshan; Zhu, Qinsheng
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Scattering due to Schottky barrier height spatial fluctuation on two dimensional electron gas in AlGaN/GaN high electron mobility transistors

Applied Physics Letters
2013 | Journal article
DOI: 10.1063/1.4841715
WOSUID: WOS:000328634900044
Contributors: Li, Huijie; Liu, Guipeng; Wei, Hongyuan; Jiao, Chunmei; Wang, Jianxia; Zhang, Heng; Jin, Dong Dong; Feng, Yuxia; Yang, Shaoyan; Wang, Lianshan et al.
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Comparative investigation of photoluminescence of In- and Si-doped GaN/A1GaN multi-quantum wells (Retraction of Vol 97, Pg 196, 2003)

Materials Science and Engineering B
2011 | Journal article
DOI: 10.1016/J.MSEB.2011.03.009
WOSUID: WOS:000291757500015
Contributors: Wang, L. S.; Sun, W. H.; Chua, S. J.; Johnson, Mark
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Growth of crack-free GaN on AlN quantum dots on Si(111)substrates by MOCVD

MRS Proceedings
2011 | Journal article
DOI: 10.1557/PROC-798-Y10.36
WOSUID: WOS:000222017200062
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Improvements of Structural and Optical Properties of GaN/Al0.10Ga0.9N Multi-Quantum Wells by Isoelectronic In-doping

MRS Proceedings
2011 | Journal article
DOI: 10.1557/PROC-693-I6.6.1
WOSUID: WOS:000177647000051
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Influence of Size of ZnO Nanorods on Light Extraction Enhancement of GaN-Based Light-Emitting Diodes

Chinese Physics Letters
2011 | Journal article
DOI: 10.1088/0256-307X/28/9/098501
WOSUID: WOS:000294778700071
Contributors: Dai Ke-Hui; Wang Lian-Shan; Huang De-Xiu; Soh Chew-Beng; Chua Soo-Jin
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Influence of the alignment of ZnO nanorod arrays on light extraction enhancement of GaN-based light-emitting diodes

Journal of Applied Physics
2011 | Journal article
DOI: 10.1063/1.3574441
WOSUID: WOS:000290047000011
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Shallow-Deep InGaN Multiple-Quantum-Well System for Dual-Wavelength Emission Grown on Semipolar (11(2)over-bar2) Facet GaN

Journal of Electronic Materials
2011 | Journal article
DOI: 10.1007/S11664-011-1652-7
WOSUID: WOS:000291041100014
Contributors: Wang, Lianshan; Lu, Zhiqin; Liu, Sheng; Feng, Zhe Chuan
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Structural and optical properties of InGaN/GaN multiple quantum well light emitting diodes grown on (1122) facet GaN/sapphire templates by metalorganic chemical vapor deposition

Eleventh International Conference on Solid State Lighting
2011 | Journal article
DOI: 10.1117/12.893080
WOSUID: WOS:000296133000010
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Initial Growth of AlInGaN on Polar Gallium Nitride Substrates under Biaxial Strain: First-principle Simulations

International Journal of Nonlinear Sciences and Numerical Simulation
2010 | Journal article
WOSUID: WOS:000283612400008
Contributors: Yan, Han; Gan, Zhi-yin; Wang, Lian-shan; Song, Xiao-hui; Liu, Sheng
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Deep levels associated with dislocation annihilation by Al pre-seeding and silicon delta doping in GaN grown on Si(111) substrates

Physica Status Solidi (a)
2008 | Journal article
DOI: 10.1002/PSSA.200723481
WOSUID: WOS:000253551000008
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GaN and ZnO freestanding micromechanical structures on silicon-on-insulator substrates

Physica Status Solidi (a)
2008 | Journal article
DOI: 10.1002/PSSA.200723611
WOSUID: WOS:000256288400034
Contributors: Tripathy, S.; Vicknesh, S.; Wang, L. S.; Lin, V. K. X.; Oh, S. A.; Grover, R.; Zang, K. Y.; Arokiaraf, J.; Tan, J. N.; Kumar, B. et al.
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Nanopatterning and selective area epitaxy of GaN on Si substrate

Proceedings of SPIE - The International Society for Optical Engineering
2008 | Conference paper
DOI: 10.1117/12.762149
WOSUID: WOS:000254733800005
Contributors: Wang, L. S.; Chua, S. J.; Tripathy, S.; Zang, K. Y.; Wang, B. Z.; Teng, J. H.
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Peer review (9 reviews for 7 publications/grants)

Review activity for Advanced electronic materials (1)
Review activity for Advanced functional materials. (1)
Review activity for Optical and quantum electronics. (1)
Review activity for Optical and quantum electronics. (1)
Review activity for Physica status solidi. (2)
Review activity for Results in engineering. (2)
Review activity for RSC advances (1)
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