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single event effect, radiation effect, proton, Geant4, heavy ion
China

Biography

radiation effect

Activities

Employment (1)

Institute of Modern Physics: Lanzhou, 730000, CN

Employment
Source: Self-asserted source
ye bing

Education and qualifications (3)

Lanzhou University: Lanzhou, CN

2014-09-01 to 2017-06-30
Education
Source: Self-asserted source
ye bing

Institute of Modern Physics: Lanzhou, CN

2012-09-01 to 2014-06-30
Education
Source: Self-asserted source
ye bing

Nanchang University: Nanchang, CN

2008-09-01 to 2012-06-30
Education
Source: Self-asserted source
ye bing

Works (28)

Exploring the impact of shrinking feature sizes on proton-induced saturation SEU cross-section through simulation

Microelectronics Reliability
2023-12 | Journal article
Part of ISSN: 0026-2714
Contributors: Bing Ye; Li Cai; Jie Luo; Pengfei Zhai; Yang Juan; Zhaoxi Wu; Shuai Gao; Xiaoyu Yan; Youmei Sun; Jie Liu
Source: Self-asserted source
ye bing
grade
Preferred source (of 2)‎

Effect of temperature on heavy ion-induced single event transient on 16-nm FinFET inverter chains

Chinese Physics B
2023-04-01 | Journal article
Part of ISSN: 1674-1056
Contributors: Li Cai; Ya-Qing Chi; Bing Ye; Yu-Zhu Liu; Ze He; Hai-Bin Wang; Qian Sun; Rui-Qi Sun; Shuai Gao; Pei-Pei Hu et al.
Source: Self-asserted source
ye bing

An investigation of angle effect on heavy ion induced single event effect in SiC MOSFET

Microelectronics Reliability
2022 | Journal article
EID:

2-s2.0-85140971159

Part of ISSN: 00262714
Contributors: Yan, X.Y.; He, Z.; Chen, Q.Y.; Hu, P.P.; Gao, S.; Zhao, S.W.; Cai, C.; Ye, B.; Zhao, P.X.; Sun, Y.M. et al.
Source: Self-asserted source
ye bing via Scopus - Elsevier

Heavy ion-induced MCUs in 28 nm SRAM-based FPGAs: upset proportions, classifications, and pattern shapes

Nuclear Science and Techniques
2022 | Journal article
EID:

2-s2.0-85143639673

Part of ISSN: 22103147 10018042
Contributors: Gao, S.; Li, X.-Y.; Zhao, S.-W.; He, Z.; Ye, B.; Cai, L.; Sun, Y.-M.; Xiao, G.-Q.; Cai, C.; Liu, J.
Source: Self-asserted source
ye bing via Scopus - Elsevier
grade
Preferred source (of 2)‎

Investigation of radiation response for III-V binary compound semiconductors due to protons using Geant4

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
2022-10 | Journal article
Part of ISSN: 0168-583X
Contributors: Bing Ye; Li Cai; Zhaoxi Wu; Jie Luo; Ze He; Shuai Gao; YuZhu Liu; Pengfei Zhai; Rigen Mo; Youmei Sun et al.
Source: Self-asserted source
ye bing
grade
Preferred source (of 2)‎

Differences in MBUs induced by high-energy and medium-energy heavy ions in 28 nm FPGAs

Nuclear Science and Techniques
2022-09 | Journal article | Author
Part of ISSN: 1001-8042
Part of ISSN: 2210-3147
Contributors: Shuai Gao; Jin-Hu Yang; ye bing; Chang Cai; Ze He; Jie Liu; Tian-Qi Liu; Xiao-Yu Yan; You-Mei Sun; Guo-Qing Xiao
Source: Self-asserted source
ye bing
grade
Preferred source (of 3)‎

Impact of heavy ion energy and species on single-event upset in commercial floating gate cells

Microelectronics Reliability
2021 | Journal article
Contributors: Ye, Bing; Mo, Li-Hua; Zhai, Peng-Fei; Cai, Li; Liu, Tao; Yin, Ya-Nan; Sun, You-Mei; Liu, Jie
Source: check_circle
Web of Science Researcher Profile Sync
grade
Preferred source (of 2)‎

Neutron-induced single event upset simulation in Geant4 for three-dimensional die-stacked SRAM*

Chinese Physics B
2021 | Journal article
Contributors: Mo, Li-Hua; Ye, Bing; Liu, Jie; Luo, Jie; Sun, You-Mei; Cai, Chang; Li, Dong-Qing; Zhao, Pei-Xiong; He, Ze
Source: check_circle
Web of Science Researcher Profile Sync
grade
Preferred source (of 2)‎

Heavy ion and proton induced single event upsets in 3D SRAM

Microelectronics Reliability
2020 | Journal article
EID:

2-s2.0-85096357071

Part of ISSN: 00262714
Contributors: He, Z.; Cai, C.; Liu, T.Q.; Ye, B.; Mo, L.H.; Liu, J.
Source: Self-asserted source
ye bing via Scopus - Elsevier

Mechanisms of alpha particle induced soft errors in nanoscale static random access memories

Acta Physica Sinica
2020 | Journal article
Contributors: Zhang Zhan-Gang; Ye Bing; Ji Qing-Gang; Guo An-Long; Xi Kai; Lei Zhi-Feng; Huang Yun; Peng Chao; He Yu-Juan; Liu Jie et al.
Source: check_circle
Web of Science Researcher Profile Sync
grade
Preferred source (of 2)‎

Influence of Orbital Parameters on SEU Rate of Low-Energy Proton in Nano-SRAM Device

Symmetry
2020-12 | Journal article | Author
Contributors: ye bing; Li-Hua Mo; Tao Liu; You-Mei Sun; Jie Liu
Source: check_circle
Multidisciplinary Digital Publishing Institute
grade
Preferred source (of 4)‎

Geant4 simulation of proton-induced single event upset in three-dimensional die-stacked SRAM device

Chinese Physics B
2020-02 | Journal article
Part of ISSN: 1674-1056
Part of ISSN: 2058-3834
Source: Self-asserted source
ye bing
grade
Preferred source (of 3)‎

Annealing behavior study on floating gate errors induced by γ followed by heavy ion irradiation,总剂量和重离子协同作用下浮栅单元错误的退火特性研究

He Jishu/Nuclear Techniques
2019 | Journal article
EID:

2-s2.0-85065743106

Part of ISSN: 02533219
Contributors: Yin, Y.; Liu, J.; Ji, Q.; Zhao, P.; Liu, T.; Ye, B.; Luo, J.; Sun, Y.; Hou, M.
Source: Self-asserted source
ye bing via Scopus - Elsevier

Effects of total ionizing dose on single event effect sensitivity of FRAMs

Microelectronics Reliability
2019 | Journal article
Contributors: Ji, Qinggang; Liu, Jie; Li, Dongqing; Liu, Tianqi; Ye, Bing; Zhao, Peixiong; Sun, Youmei
Source: check_circle
Web of Science Researcher Profile Sync
grade
Preferred source (of 2)‎

Evaluation of SEU Sensitivity in Hardened FPGA on Layout-based Sensitive Volume Method

2019 3rd International Conference on Radiation Effects of Electronic Devices, ICREED 2019
2019 | Conference paper
EID:

2-s2.0-85093869364

Contributors: Cai, C.; Ding, L.; Chen, G.; Liu, T.; Li, D.; Zhao, P.; He, Z.; Ye, B.; Liu, J.
Source: Self-asserted source
ye bing via Scopus - Elsevier

Heavy-ion and pulsed-laser single event effects in 130-nm CMOS-based thin/thick gate oxide anti-fuse PROMs

Nuclear Science and Techniques
2019 | Journal article
Contributors: Cai, Chang; Liu, Tian-Qi; Li, Xiao-Yuan; Liu, Jie; Zhang, Zhan-Gang; Geng, Chao; Zhao, Pei-Xiong; Li, Dong-Qing; Ye, Bing; Li, Qing-Gang et al.
Source: check_circle
Web of Science Researcher Profile Sync
grade
Preferred source (of 2)‎

Heavy-ion induced radiation effects in 50 nm NAND floating gate flash memories

Microelectronics Reliability
2019 | Journal article
Contributors: Yin, Ya-nan; Liu, Jie; Liu, Tian-qi; Ye, Bing; Ji, Qing-gang; Sun, You-mei; Zhou, Xin-jie
Source: check_circle
Web of Science Researcher Profile Sync
grade
Preferred source (of 2)‎

Anomalous annealing of floating gate errors due to heavy ion irradiation

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
2018 | Journal article
Contributors: Yin, Yanan; Liu, Jie; Sun, Youmei; Hou, Mingdong; Liu, Tianqi; Ye, Bing; Ji, Qinggang; Luo, Jie; Zhao, Peixiong
Source: check_circle
Web of Science Researcher Profile Sync
grade
Preferred source (of 2)‎

Heavy Ion Radiation Effects on a 130-nm COTS NVSRAM Under Different Measurement Conditions

IEEE Transactions on Nuclear Science
2018 | Journal article
Contributors: Liu, Tianqi; Liu, Jie; Xi, Kai; Zhang, Zhangang; He, Deyan; Ye, Bing; Yin, Yanan; Ji, Qinggang; Wang, Bin; Luo, Jie et al.
Source: check_circle
Web of Science Researcher Profile Sync
grade
Preferred source (of 2)‎

Influences of total ionizing dose on single event effect sensitivity in floating gate cells

Chinese Physics B
2018 | Journal article
Contributors: Yin, Ya-Nan; Liu, Jie; Ji, Qing-Gang; Zhao, Pei-Xiong; Liu, Tian-Qi; Ye, Bing; Luo, Jie; Sun, You-Mei; Hou, Ming-Dong
Source: check_circle
Web of Science Researcher Profile Sync
grade
Preferred source (of 2)‎

Investigation of flux dependent sensitivity on single event effect in memory devices

Chinese Physics B
2018 | Journal article
Contributors: Luo, Jie; Wang, Tie-shan; Li, Dong-qing; Liu, Tian-qi; Hou, Ming-dong; Sun, You-mei; Duan, Jing-lai; Yao, Hui-jun; Xi, Kai; Ye, Bing et al.
Source: check_circle
Web of Science Researcher Profile Sync
grade
Preferred source (of 2)‎

A comparison of heavy ion induced single event upset susceptibility in unhardened 6T/SRAM and hardened ADE/SRAM

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
2017 | Journal article
Contributors: Wang, Bin; Zeng, Chuanbin; Geng, Chao; Liu, Tianqi; Khan, Maaz; Yan, Weiwei; Hou, Mingdong; Ye, Bing; Sun, Youmei; Yin, Yanan et al.
Source: check_circle
Web of Science Researcher Profile Sync
grade
Preferred source (of 2)‎

Application of SEU imaging for analysis of device architecture using a 25 MeV/u <SUP>86</SUP>Kr ion microbeam at HIRFL

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
2017 | Journal article
Contributors: Liu, Tianqi; Yang, Zhenlei; Guo, Jinlong; Du, Guanghua; Tong, Teng; Wang, Xiaohui; Su, Hong; Liu, Wenjing; Liu, Jiande; Wang, Bin et al.
Source: check_circle
Web of Science Researcher Profile Sync
grade
Preferred source (of 2)‎

Influence of heavy ion flux on single event effect testing in memory devices

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
2017 | Journal article
Contributors: Luo, Jie; Liu, Jie; Sun, Youmei; Hou, Mingdong; Xi, Kai; Liu, Tianqi; Wang, Bin; Ye, Bing
Source: check_circle
Web of Science Researcher Profile Sync
grade
Preferred source (of 2)‎

Prediction of proton-induced SEE error rates for the VATA160 ASIC

Nuclear Science and Techniques
2017 | Journal article
Contributors: Xi, Kai; Jiang, Di; Gao, Shan-Shan; Kong, Jie; Zhao, Hong-Yun; Yang, Hai-Bo; Liu, Tian-Qi; Wang, Bin; Ye, Bing; Liu, Jie
Source: check_circle
Web of Science Researcher Profile Sync
grade
Preferred source (of 2)‎

Low energy proton induced single event upset in 65 nm DDR and QDR commercial SRAMs

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
2017-09 | Journal article
Part of ISSN: 0168-583X
Source: Self-asserted source
ye bing
grade
Preferred source (of 3)‎

Impact of energy straggle on proton-induced single event upset test in a 65-nm SRAM cell

Chinese Physics B
2017-08 | Journal article
Part of ISSN: 1674-1056
Source: Self-asserted source
ye bing
grade
Preferred source (of 3)‎

Monte Carlo predictions of proton SEE cross-sections from heavy ion test data

Chinese Physics C
2016 | Journal article
Contributors: Xi, Kai; Geng, Chao; Zhang, Zhan-Gang; Hou, Ming-Dong; Sun, You-Mei; Luo, Jie; Liu, Tian-Qi; Wang, Bin; Ye, Bing; Yin, Ya-Nan et al.
Source: check_circle
Web of Science Researcher Profile Sync
grade
Preferred source (of 2)‎

Peer review (1 review for 1 publication/grant)

Review activity for IEEE transactions on nuclear science. (1)