Personal information

Activities

Collapse all

Works (4)

Effects of 5 MeV proton irradiation on 4H-SiC lateral pMOSFETs on-state characteristics

Microelectronics Journal
2023 | Journal article
DOI: https://doi.org/10.1016/j.mejo.2023.105799
Part of ISSN: 0026-2692
Contributors: Ying Wang; Yanjing He; Xiaoyan Tang; Qingwen Song; Dongxun Li; Hao Yuan; Xiaowu Gong; Yuming Zhang
Source: Self-asserted source
Dongxun Li

Effects of 5 MeV Proton Irradiation on 1200 V 4H-SiC VDMOSFETs ON-State Characteristics

IEEE Access
2020 | Journal article
DOI: 10.1109/ACCESS.2020.2999642
Contributors: Dongxun Li; Yuming Zhang; Xiaoyan Tang; Yanjing He; Qingwen Song; Yimen Zhang
Source: check_circle
Crossref

Effects of 5 MeV Proton Irradiation on Nitrided SiO2/4H-SiC MOS Capacitors and the Related Mechanisms

Nanomaterials
2020-07-08 | Journal article
DOI: 10.3390/nano10071332
Contributors: Dongxun Li; Yuming Zhang; Xiaoyan Tang; Yanjing He; Hao Yuan; Yifan Jia; Qingwen Song; Ming Zhang; Yimen Zhang
Source: check_circle
Crossref
grade
Preferred source (of 2)‎

Radiation Effects of 5MeV Proton on Wet Oxidation SiO2/4H-SiC MOS Capacitor

2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)
2018 | Conference paper
DOI: 10.1109/WiPDAAsia.2018.8734694
Contributors: Li, Haojie; Zhang, Yuming; Tang, Xiaoyan; Li, Dongxun; Song, Qingwen
Source: Self-asserted source
Dongxun Li
How many people are using ORCID?