Personal information

Biography

Dr. Hervé Jaouen (IEEE Senior Member since 2001) received the degree in engineering and the Ph.D. degree from the Institut National Polytechnique de Grenoble, France, in 1979 and 1984, respectively. From 1981 to 1989, he was an Associate Professor with the Institut National Polytechnique de Grenoble, where he developed for his Ph.D. a novel microwave annealing technique of semiconductors. He then worked on electronic-transport properties of disordered matter. In 1989, he joined the Technology Computer-Aided Design (TCAD) Group of SGS Thomson Microelectronics, where he was involved in the STORM EEC program with the goal of developing a 2-D process simulation tool. Next, he was the Manager of the TCAD Group of the Crolles’ Plant for STMicroelectronics. Since 2004, he was the head of the ST Modeling Department, Crolles, France. The scope covered by his department included TCAD, compact modeling, and ESD modeling. He has published over 107 papers in the area of microelectronics and is the holder of 18 granted U.S. patents in the field. He was recipient of the ST’s Exceptional Patent Award in 2003. Since 2017 he is Partnership and Academic Cooperation Director at STMicroelectronics.
Dr. Jaouen held positions on the technical program committees of IEDM, VLSI Technology Symposium, ESSDERC, SISPAD, ESREF conferences. He served as European representative for the International Roadmap for Semiconductors in the Modeling and Simulation ITWG. He was involved in coordination of the activity of STMicroelectronics in the technical management committees of IST European Community programs. He held/holds positions in the management committees of some ANR French national research programs on nanotechnology, nanoscience and on high-performance computing. He was holding position on the editorial board of IEEE Transactions on Electron Devices during 9 years.

Activities

Works (50 of 106)

Items per page:
Page 1 of 3

Experimental and numerical investigations on Cu/low-k interconnect reliability during copper pillar shear test

Proceedings - Electronic Components and Technology Conference
2015 | Conference paper
EID:

2-s2.0-84942124371

Part of ISSN: 05695503
Contributors: Sart, C.; Gallois-Garreignot, S.; Fiori, V.; Kermarrec, O.; Moutin, C.; Tavernier, C.; Jaouen, H.
Source: Self-asserted source
herve jaouen via Scopus - Elsevier

Investigations of Thermomechanical Stress Induced by TSV-Middle (Through-Silicon via) in 3-D ICs by Means of CMOS Sensors and Finite-Element Method

IEEE Transactions on Components, Packaging and Manufacturing Technology
2015 | Journal article
EID:

2-s2.0-85027935713

Part of ISSN: 21563950
Contributors: Ewuame, K.A.; Fiori, V.; Inal, K.; Bouchard, P.-O.; Gallois-Garreignot, S.; Lionti, S.; Tavernier, C.; Jaouen, H.
Source: Self-asserted source
herve jaouen via Scopus - Elsevier

New compact model for performance and process variability assessment in 14nm FDSOI CMOS technology

IEEE International Conference on Microelectronic Test Structures
2015 | Conference paper
EID:

2-s2.0-84940743218

Contributors: Denis, Y.; Monsieur, F.; Ghibaudo, G.; Mazurier, J.; Josse, E.; Rideau, D.; Charbuillet, C.; Tavernier, C.; Jaouen, H.
Source: Self-asserted source
herve jaouen via Scopus - Elsevier

TCAD modeling challenges for 14nm FullyDepleted SOI technology performance assessment

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
2015 | Conference paper
EID:

2-s2.0-84959363074

Contributors: Tavernier, C.; Pereira, F.G.; Nier, O.; Rideau, D.; Monsieur, F.; Torrente, G.; Haond, M.; Jaouen, H.; Noblanc, O.; Niquet, Y.M. et al.
Source: Self-asserted source
herve jaouen via Scopus - Elsevier

A new approach for modeling drain current process variability applied to FDSOI technology

ULIS 2014 - 2014 15th International Conference on Ultimate Integration on Silicon
2014 | Conference paper
EID:

2-s2.0-84901356317

Contributors: Denis, Y.; Monsieur, F.; Petit, D.; Tavernier, C.; Jaouen, H.; Ghibaudo, G.
Source: Self-asserted source
herve jaouen via Scopus - Elsevier

CMOS stress sensor for 3D integrated circuits: Thermo-mechanical effects of Through Silicon Via (TSV) on surrounding silicon

2014 15th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2014
2014 | Conference paper
EID:

2-s2.0-84901451497

Contributors: Ewuame, K.A.; Fiori, V.; Inal, K.; Bouchard, P.-O.; Gallois-Garreignot, S.; Lionti, S.; Tavernier, C.; Jaouen, H.
Source: Self-asserted source
herve jaouen via Scopus - Elsevier

Effective field and universal mobility in high-k metal gate UTBB-FDSOI devices

IEEE International Conference on Microelectronic Test Structures
2014 | Conference paper
EID:

2-s2.0-84904171518

Contributors: Nier, O.; Rideau, D.; Cros, A.; Monsieur, F.; Ghibaudo, G.; Clerc, R.; Barbé, J.C.; Tavernier, C.; Jaouen, H.
Source: Self-asserted source
herve jaouen via Scopus - Elsevier

Experimental and theoretical investigation of the 'apparent' mobility degradation in Bulk and UTBB-FDSOI devices: A focus on the near-spacer-region resistance

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
2014 | Conference paper
EID:

2-s2.0-84908664466

Contributors: Rideau, D.; Monsieur, F.; Nier, O.; Niquet, Y.M.; Lacord, J.; Quenette, V.; Mugny, G.; Hiblot, G.; Gouget, G.; Quoirin, M. et al.
Source: Self-asserted source
herve jaouen via Scopus - Elsevier

Investigation of TSV induced thermo-mechanical stress: Implementation of piezoresistive sensors and correlation with simulation

Advanced Materials Research
2014 | Book
EID:

2-s2.0-84906568984

Part of ISSN: 16628985 10226680
Contributors: Ewuame, K.A.; Fiori, V.; Inal, K.; Bouchard, P.-O.; Gallois-Garreignot, S.; Lionti, S.; Tavernier, C.; Jaouen, H.
Source: Self-asserted source
herve jaouen via Scopus - Elsevier

Numerical analysis of thermo-mechanical and mobility effects for 28 nm node and beyond: Comparison and design consequences over bumping technologies

Microelectronics Reliability
2014 | Journal article
EID:

2-s2.0-84897485714

Part of ISSN: 00262714
Contributors: Fiori, V.; Ewuame, K.-A.; Gallois-Garreignot, S.; Jaouen, H.; Tavernier, C.
Source: Self-asserted source
herve jaouen via Scopus - Elsevier

The importance of the spacer region to explain short channels mobility collapse in 28nm Bulk and FDSOI technologies

European Solid-State Device Research Conference
2014 | Conference paper
EID:

2-s2.0-84911959970

Part of ISSN: 19308876
Contributors: Monsieur, F.; Denis, Y.; Rideau, D.; Quenette, V.; Gouget, G.; Tavernier, C.; Jaouen, H.; Ghibaudo, G.; Lacord, J.
Source: Self-asserted source
herve jaouen via Scopus - Elsevier

Limits and improvements of TCAD piezoresistive models in FDSOI transistors

ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Incorporating the 'Technology Briefing Day'
2013 | Conference paper
EID:

2-s2.0-84880295185

Contributors: Nier, O.; Rideau, D.; Clerc, R.; Barbe, J.C.; Silvestri, L.; Nallet, F.; Tavernier, C.; Jaouen, H.
Source: Self-asserted source
herve jaouen via Scopus - Elsevier

Mobility in high-K metal gate UTBB-FDSOI devices: From NEGF to TCAD perspectives

Technical Digest - International Electron Devices Meeting, IEDM
2013 | Conference paper
EID:

2-s2.0-84894381692

Part of ISSN: 01631918
Contributors: Rideau, D.; Niquet, Y.M.; Nier, O.; Cros, A.; Manceau, J.P.; Palestri, P.; Esseni, D.; Nguyen, V.H.; Triozon, F.; Barbe, J.C. et al.
Source: Self-asserted source
herve jaouen via Scopus - Elsevier

Multi-scale strategy for high-k/metal-gate UTBB-FDSOI devices modeling with emphasis on back bias impact on mobility

Journal of Computational Electronics
2013 | Journal article
EID:

2-s2.0-84890856167

Part of ISSN: 15698025 15728137
Contributors: Nier, O.; Rideau, D.; Niquet, Y.M.; Monsieur, F.; Nguyen, V.H.; Triozon, F.; Cros, A.; Clerc, R.; Barbé, J.C.; Palestri, P. et al.
Source: Self-asserted source
herve jaouen via Scopus - Elsevier

Revisited RF compact model of gate resistance suitable for High-K/metal gate technology

IEEE Transactions on Electron Devices
2013 | Journal article
EID:

2-s2.0-84871754072

Part of ISSN: 00189383
Contributors: Dormieu, B.; Scheer, P.; Charbuillet, C.; Jaouen, H.; Danneville, F.
Source: Self-asserted source
herve jaouen via Scopus - Elsevier

Strain engineering for bumping over IPs: Numerical investigations of thermo-mechanical stress induced mobility variations for CMOS 32 nm and beyond

Microelectronics Reliability
2013 | Journal article
EID:

2-s2.0-84873730311

Part of ISSN: 00262714
Contributors: Fiori, V.; Gallois-Garreignot, S.; Jaouen, H.; Tavernier, C.
Source: Self-asserted source
herve jaouen via Scopus - Elsevier

Surface potential compact model for embedded flash devices oriented to IC memory design

Solid-State Electronics
2013 | Journal article
EID:

2-s2.0-84884987248

Part of ISSN: 00381101
Contributors: Garetto, D.; Rideau, D.; Gilibert, F.; Schmid, A.; Jaouen, H.; Leblebici, Y.
Source: Self-asserted source
herve jaouen via Scopus - Elsevier

An efficient nonlocal hot electron model accounting for electron-electron scattering

IEEE Transactions on Electron Devices
2012 | Journal article
EID:

2-s2.0-84859210004

Part of ISSN: 00189383
Contributors: Zaka, A.; Palestri, P.; Rafhay, Q.; Clerc, R.; Iellina, M.; Rideau, D.; Tavernier, C.; Pananakakis, G.; Jaouen, H.; Selmi, L.
Source: Self-asserted source
herve jaouen via Scopus - Elsevier

Analysis of defect capture cross sections using non-radiative multiphonon-assisted trapping model

Solid-State Electronics
2012 | Journal article
EID:

2-s2.0-84858701767

Part of ISSN: 00381101
Contributors: Garetto, D.; Randriamihaja, Y.M.; Zaka, A.; Rideau, D.; Schmid, A.; Jaouen, H.; Leblebici, Y.
Source: Self-asserted source
herve jaouen via Scopus - Elsevier

Comparing defect characterization techniques with non-radiative multiphonon charge trapping model AC analysis, trap-assisted-tunneling and charge pumping

Journal of Computational Electronics
2012 | Journal article
EID:

2-s2.0-84871923158

Part of ISSN: 15698025 15728137
Contributors: Garetto, D.; Randriamihaja, Y.M.; Rideau, D.; Schmid, A.; Jaouen, H.
Source: Self-asserted source
herve jaouen via Scopus - Elsevier

Modeling stressed MOS oxides using a multiphonon-assisted quantum approach-Part I: Impedance analysis

IEEE Transactions on Electron Devices
2012 | Journal article
EID:

2-s2.0-84857649740

Part of ISSN: 00189383
Contributors: Garetto, D.; Randriamihaja, Y.M.; Rideau, D.; Zaka, A.; Schmid, A.; Leblebici, Y.; Jaouen, H.
Source: Self-asserted source
herve jaouen via Scopus - Elsevier

Modeling stressed MOS oxides using a multiphonon-assisted quantum approach-Part II: Transient effects

IEEE Transactions on Electron Devices
2012 | Journal article
EID:

2-s2.0-84857642545

Part of ISSN: 00189383
Contributors: Garetto, D.; Randriamihaja, Y.M.; Rideau, D.; Zaka, A.; Schmid, A.; Leblebici, Y.; Jaouen, H.
Source: Self-asserted source
herve jaouen via Scopus - Elsevier

Modeling study of the SiGe/Si heterostructure in FDSOI pMOSFETs

IEEE 2012 International Semiconductor Conference Dresden-Grenoble, ISCDG 2012
2012 | Conference paper
EID:

2-s2.0-84871844828

Contributors: Soussou, A.; Rideau, D.; Leroux, C.; Ghibaudo, G.; Tavernier, C.; Jaouen, H.
Source: Self-asserted source
herve jaouen via Scopus - Elsevier

Surface potential compact model for embedded flash devices oriented to IC memory design

2012 13th International Conference on Ultimate Integration on Silicon, ULIS 2012
2012 | Conference paper
EID:

2-s2.0-84861215229

Contributors: Garetto, D.; Rideau, D.; Gilibert, F.; Schmid, A.; Jaouen, H.; Leblebici, Y.
Source: Self-asserted source
herve jaouen via Scopus - Elsevier

Advanced physics for simulation of ultrascaled devices with UTOXPP solver

Technical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011
2011 | Conference paper
EID:

2-s2.0-81455144109

Contributors: Garetto, D.; Rideau, D.; Tavernier, C.; Leblebici, Y.; Schmid, A.; Jaouen, H.
Source: Self-asserted source
herve jaouen via Scopus - Elsevier

Characterization and 3D TCAD simulation of NOR-type flash non-volatile memories with emphasis on corner effects

Solid-State Electronics
2011 | Journal article
EID:

2-s2.0-80051783888

Part of ISSN: 00381101
Contributors: Zaka, A.; Singer, J.; Dornel, E.; Garetto, D.; Rideau, D.; Rafhay, Q.; Clerc, R.; Manceau, J.-P.; Degors, N.; Boccaccio, C. et al.
Source: Self-asserted source
herve jaouen via Scopus - Elsevier

Characterization and modelling of gate current injection in embedded non-volatile flash memory

IEEE International Conference on Microelectronic Test Structures
2011 | Conference paper
EID:

2-s2.0-80052404627

Contributors: Zaka, A.; Garetto, D.; Rideau, D.; Palestri, P.; Manceau, J.-P.; Dornel, E.; Rafhay, Q.; Clerc, R.; Leblebici, Y.; Tavernier, C. et al.
Source: Self-asserted source
herve jaouen via Scopus - Elsevier

Characterization and physical modeling of endurance in embedded non-volatile memory technology

2011 3rd IEEE International Memory Workshop, IMW 2011
2011 | Conference paper
EID:

2-s2.0-79959933384

Contributors: Garetto, D.; Zaka, A.; Manceau, J.-P.; Rideau, D.; Dornel, E.; Clark, W.F.; Schmid, A.; Jaouen, H.; Leblebici, Y.
Source: Self-asserted source
herve jaouen via Scopus - Elsevier

Electron-phonon scattering in Si and Ge: From bulk to nanodevices

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
2011 | Conference paper
EID:

2-s2.0-80054974004

Contributors: Rideau, D.; Zhang, W.; Niquet, Y.M.; Delerue, C.; Tavernier, C.; Jaouen, H.
Source: Self-asserted source
herve jaouen via Scopus - Elsevier

Narrow-width effects on a body-tied partially depleted SOI MOSFET

IEEE Transactions on Electron Devices
2011 | Journal article
EID:

2-s2.0-80054941840

Part of ISSN: 00189383
Contributors: Valentin, R.; Bertrand, G.; Puget, S.; Scheer, P.; Juge, A.; Jaouen, H.; Raynaud, C.
Source: Self-asserted source
herve jaouen via Scopus - Elsevier

Characterization & modeling of gate-induced-drain-leakage with complete overlap and fringing model

IEEE International Conference on Microelectronic Test Structures
2010 | Conference paper
EID:

2-s2.0-77953900035

Contributors: Rideau, D.; Quenette, V.; Garetto, D.; Dornel, E.; Weybright, M.; Manceau, J.P.; Saxod, O.; Tavernier, C.; Jaouen, H.
Source: Self-asserted source
herve jaouen via Scopus - Elsevier

Full-Band Monte Carlo investigation of hole mobilities in SiGe, SiC and SiGeC alloys

Thin Solid Films
2010 | Journal article
EID:

2-s2.0-76049088639

Part of ISSN: 00406090
Contributors: Michaillat, M.; Rideau, D.; Aniel, F.; Tavernier, C.; Jaouen, H.
Source: Self-asserted source
herve jaouen via Scopus - Elsevier

Mechanical issues induced by electrical wafer sort: Correlations from actual tests, nanoindentation and 3D dynamic modeling

Electronics System Integration Technology Conference, ESTC 2010 - Proceedings
2010 | Conference paper
EID:

2-s2.0-78651330386

Contributors: Roucou, R.; Fiori, V.; Inal, K.; Jaouen, H.
Source: Self-asserted source
herve jaouen via Scopus - Elsevier

Modeling study of capacitance characteristics in strained high-k metal gate technology: Impact of Si/SiO<inf>2</inf>/HK interfacial layer and band structure model

Nanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - Technical Proceedings of the 2010 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2010
2010 | Conference paper
EID:

2-s2.0-78049424652

Contributors: Garetto, P.; Rideau, D.; Dornel, E.; Clark, W.F.; Tavernier, C.; Leblebici, Y.; Schmid, A.; Jaouen, H.
Source: Self-asserted source
herve jaouen via Scopus - Elsevier

On the accuracy of current TCAD hot carrier injection models in nanoscale devices

Solid-State Electronics
2010 | Journal article
EID:

2-s2.0-77957297923

Part of ISSN: 00381101
Contributors: Zaka, A.; Rafhay, Q.; Iellina, M.; Palestri, P.; Clerc, R.; Rideau, D.; Garetto, D.; Dornel, E.; Singer, J.; Pananakakis, G. et al.
Source: Self-asserted source
herve jaouen via Scopus - Elsevier

Programming efficiency and drain disturb trade-off in embedded non volatile memories

2010 14th International Workshop on Computational Electronics, IWCE 2010
2010 | Conference paper
EID:

2-s2.0-78751680681

Contributors: Zaka, A.; Palestri, P.; Rideau, D.; Iellina, M.; Dornel, E.; Rafhay, Q.; Tavernier, C.; Jaouen, H.
Source: Self-asserted source
herve jaouen via Scopus - Elsevier

Small signal analysis of electrically-stressed oxides with Poisson-Schroedinger based multiphonon capture model

2010 14th International Workshop on Computational Electronics, IWCE 2010
2010 | Conference paper
EID:

2-s2.0-78751696432

Contributors: Garetto, D.; Randriamihaja, Y.M.; Rideau, D.; Dornel, E.; Clark, W.F.; Schmid, A.; Huard, V.; Jaouen, H.; Leblebici, Y.
Source: Self-asserted source
herve jaouen via Scopus - Elsevier

Dynamic charge sharing modeling for surface potential based models

Technical Proceedings of the 2009 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2009
2009 | Conference paper
EID:

2-s2.0-77958047605

Contributors: Quenette, V.; Rideau, R.; Clerc, D.; Retailleau, S.; Tavernier, C.; Jaouen, H.
Source: Self-asserted source
herve jaouen via Scopus - Elsevier

Embedded non-volatile memory study with surface potential based Model

Technical Proceedings of the 2009 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2009
2009 | Conference paper
EID:

2-s2.0-77958060142

Contributors: Garetto, D.; Zaka, A.; Quenette, V.; Rideau, D.; Dornel, E.; Saxod, O.; Clark, W.F.; Minondo, M.; Tavernier, C.; Rafhay, Q. et al.
Source: Self-asserted source
herve jaouen via Scopus - Elsevier

Monitoring variability of channel doping profile in the 45nm node MOSFET through reverse engineering of electrical back-bias effect

ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference
2009 | Conference paper
EID:

2-s2.0-72849145233

Contributors: Lemoigne, P.; Quenette, V.; Juge, A.; Rideau, D.; Retailleau, S.; Zaid, L.; Dufaza, C.; Tavernier, C.; Jaouen, H.
Source: Self-asserted source
herve jaouen via Scopus - Elsevier

Monte Carlo simulation of high-energy transport of electrons and holes in bulk SiGeC alloys

Journal of Physics: Conference Series
2009 | Conference paper
EID:

2-s2.0-74849094470

Part of ISSN: 17426596 17426588
Contributors: Michaillat, M.; Rideau, D.; Aniel, F.; Tavernier, C.; Jaouen, H.
Source: Self-asserted source
herve jaouen via Scopus - Elsevier

Monte Carlo-based analytical models for electron and hole electrical parameters in strained SiGeC alloys

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
2009 | Conference paper
EID:

2-s2.0-74349098095

Contributors: Michaillat, M.; Rideau, D.; Aniel, F.; Tavernier, C.; Jaouen, H.
Source: Self-asserted source
herve jaouen via Scopus - Elsevier

New self heating structures for thermal coupling modeling on multi-fingered SOI power devices

Proceedings of the International Symposium on Power Semiconductor Devices and ICs
2009 | Conference paper
EID:

2-s2.0-77950000884

Part of ISSN: 10636854
Contributors: Hniki, S.; Bertrand, G.; Morancho, F.; Ortolland, S.; Minondo, M.; Rauber, B.; Raynaud, C.; Giry, A.; Bon, O.; Jaouen, H.
Source: Self-asserted source
herve jaouen via Scopus - Elsevier

On the accuracy of current TCAD hot carrier injection models for the simulation of degradation phenomena in nanoscale devices

2009 International Semiconductor Device Research Symposium, ISDRS '09
2009 | Conference paper
EID:

2-s2.0-77949357535

Contributors: Zaka, A.; Rafhay, Q.; Palestri, P.; Clerc, R.; Rideau, D.; Selmi, L.; Tavernier, C.; Jaouen, H.
Source: Self-asserted source
herve jaouen via Scopus - Elsevier

On the validity of the effective mass approximation and the Luttinger k.p model in fully depleted SOI MOSFETs

Solid-State Electronics
2009 | Journal article
EID:

2-s2.0-63049133304

Part of ISSN: 00381101
Contributors: Rideau, D.; Feraille, M.; Michaillat, M.; Niquet, Y.M.; Tavernier, C.; Jaouen, H.
Source: Self-asserted source
herve jaouen via Scopus - Elsevier

Onsite matrix elements of the tight-binding Hamiltonian of a strained crystal: Application to silicon, germanium, and their alloys

Physical Review B - Condensed Matter and Materials Physics
2009 | Journal article
EID:

2-s2.0-67650085428

Part of ISSN: 10980121 1550235X
Contributors: Niquet, Y.M.; Rideau, D.; Tavernier, C.; Jaouen, H.; Blase, X.
Source: Self-asserted source
herve jaouen via Scopus - Elsevier

Thermal effects modeling of multi-fingered MOSFETs based on new specific test structures

ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference
2009 | Conference paper
EID:

2-s2.0-72849147743

Contributors: Hniki, S.; Bertrand, G.; Ortolland, S.; Minondo, M.; Rauber, B.; Raynaud, C.; Giry, A.; Bon, O.; Jaouen, H.; Morancho, F.
Source: Self-asserted source
herve jaouen via Scopus - Elsevier

A Pearson effective potential for Monte Carlo simulation of quantum confinement effects in nMOSFETs

IEEE Transactions on Electron Devices
2008 | Journal article
EID:

2-s2.0-57149146453

Part of ISSN: 00189383
Contributors: Jaud, M.-A.; Barraud, S.; Saint-Martin, J.; Bournel, A.; Dollfus, P.; Jaouen, H.
Source: Self-asserted source
herve jaouen via Scopus - Elsevier

Chip-package interactions: Some combined package effects on copper/low-k interconnect delaminations

Proceedings - 2008 2nd Electronics Systemintegration Technology Conference, ESTC
2008 | Conference paper
EID:

2-s2.0-58149094505

Contributors: Fiori, V.; Gallois-Garreignot, S.; Tavernier, C.; Jaouen, H.; Juge, A.
Source: Self-asserted source
herve jaouen via Scopus - Elsevier

Chip-package interactions: Some investigations on copper/low-k interconnect delaminations

EuroSimE 2008 - International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Micro-Systems
2008 | Conference paper
EID:

2-s2.0-49249124605

Contributors: Fiori, V.; Gallois-Garreignot, S.; Tavernier, C.; Jaouen, H.; Juge, A.
Source: Self-asserted source
herve jaouen via Scopus - Elsevier
Items per page:
Page 1 of 3