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Education and qualifications (2)

Indian Institute of Technology Bombay: Mumbai, Maharashtra, IN

2015-01-01 to present | Ph.D. (Electrical Engineering)
Education
Source: Self-asserted source
Shonal Chouksey

Shri Govindram Seksaria Institute of Technology and Science: Indore, Madhya Pradesh, IN

2010-07-01 to 2012-06-30 | M.Tech. (Applied Physics)
Education
Source: Self-asserted source
Shonal Chouksey

Works (6)

Determination of size dependent carrier capture in InGaN/GaN quantum nanowires by femto-second transient absorption spectroscopy: effect of optical phonon, electron-electron scattering and diffusion

Nanotechnology
2019-01 | Journal article
DOI: 10.1088/1361-6528/ab0035
Part of ISSN: 0957-4484
Contributors: Shonal Chouksey; S. Sreenadh; Swaroop Ganguly; Dipankar Saha
Source: Self-asserted source
Shonal Chouksey via Crossref Metadata Search

Enhanced luminescence from InGaN/GaN nano-disk in a wire array caused by surface potential modulation during wet treatment

Nanotechnology
2019-01 | Journal article
DOI: 10.1088/1361-6528/aaf8de
Part of ISSN: 0957-4484
Contributors: Pratim Kumar Saha; Vikas Pendem; Shonal Chouksey; Ankit Udai; Tarni Aggarwal; Swaroop Ganguly; D Saha
Source: Self-asserted source
Shonal Chouksey via Crossref Metadata Search

Determination of strain relaxation in InGaN/GaN nanowalls from quantum confinement and exciton binding energy dependent photoluminescence peak

Scientific Reports
2018-05 | Journal article
DOI: 10.1038/s41598-018-26725-6
Part of ISSN: 2045-2322
Contributors: Sandeep Sankaranarayanan; Shonal Chouksey; Pratim Saha; Vikas Pendem; Ankit Udai; Tarni Aggarwal; Swaroop Ganguly; Dipankar Saha
Source: Self-asserted source
Shonal Chouksey via Crossref Metadata Search

Temperature-independent optical transition with sub-nanometer linewidth in thermally diffused Gadolinium in GaN

Optics Letters
2017-05 | Journal article
DOI: 10.1364/ol.42.002161
Part of ISSN: 0146-9592
Contributors: Pratim K. Saha; Shonal Chouksey; Swaroop Ganguly; Dipankar Saha
Source: Self-asserted source
Shonal Chouksey via Crossref Metadata Search

Carrier and photon dynamics in a topological insulator Bi2Te3/GaN type II staggered heterostructure

Applied Physics Letters
2015 | Journal article
Source: Self-asserted source
Shonal Chouksey

Strong Size Dependency on the Carrier and Photon Dynamics in InGaN/GaN Single Nanowalls Determined Using Photoluminescence and Ultrafast Transient Absorption Spectroscopy

Nanoletters
Journal article
Source: Self-asserted source
Shonal Chouksey
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