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Employment (3)

The Ohio State University: Columbus, Ohio, US

2017-08-01 to present | Professor (Electrical & Computer Engineering)
Employment
Source: Self-asserted source
Anant Agarwal

US Department of Energy: Washington, DC, US

2013-03-17 to 2016-11-02 | Senior Adviser (Advanced Manufacturing Office)
Employment
Source: Self-asserted source
Anant Agarwal

Cree Inc: Durham, NC, US

1999-03-15 to 2013-03-01 | R&D Manager (Power Device R&D)
Employment
Source: Self-asserted source
Anant Agarwal

Education and qualifications (3)

Lehigh University: Bethlehem, PA, US

1980-01-01 to 1984-06-01 | PhD (Electrical and Computer Engineering)
Education
Source: Self-asserted source
Anant Agarwal

The University of Tennessee Space Institute: Tullahoma, TN, US

1978-08-01 to 1979-12-15 | MS (Electrical Engineering)
Education
Source: Self-asserted source
Anant Agarwal

Motilal Nehru National Institute of Technology: Allahabad, Uttar Pradesh, IN

1974-08-01 to 1978-06-01 | BE (Electrical Engineering)
Education
Source: Self-asserted source
Anant Agarwal

Professional activities (2)

IEEE Electron Devices Society: New York, NY, US

Fellow
Membership
Source: Self-asserted source
Anant Agarwal

IEEE Electron Devices Society: New York, NY, US

2012-01-01 | Fellow (Electron Device Society)
Distinction
Source: Self-asserted source
Anant Agarwal

Works (8)

Failure and Degradation Analysis of Commercial 1.2-kV SiC Trench MOSFETs Under Repetitive Short-Circuit Stress

IEEE Transactions on Electron Devices
2025 | Journal article
Contributors: Hengyu Yu; Michael Jin; Limeng Shi; Monikuntala Bhattacharya; Jiashu Qian; Shiva Houshmand; Atsushi Shimbori; Anant K. Agarwal
Source: check_circle
Crossref

Analysis and Optimization of Burn-In Techniques for Screening Commercial 1.2-kV SiC MOSFETs

IEEE Transactions on Electron Devices
2025-01 | Journal article
Contributors: Limeng Shi; Hengyu Yu; Michael Jin; Jiashu Qian; Monikuntala Bhattacharya; Shiva Houshmand; Atsushi Shimbori; Marvin H. White; Anant K. Agarwal
Source: check_circle
Crossref

Characterization and Analysis of Degradation for 1.2-kV Rated SiC Trench MOSFETs Under Repetitive Switching Impulses

IEEE Transactions on Electron Devices
2024-11 | Journal article
Contributors: Hengyu Yu; Michael Jin; Nikhil Bhardwaj; Limeng Shi; Monikuntala Bhattacharya; Jiashu Qian; Shiva Houshmand; Anant K. Agarwal
Source: check_circle
Crossref

SPICE Modeling and Circuit Demonstration of a SiC Power IC Technology

IEEE Journal of the Electron Devices Society
2022 | Journal article
Contributors: Tianshi Liu; Hua Zhang; Sundar Babu Isukapati; Emran Ashik; Adam J. Morgan; Bongmook Lee; Woongje Sung; Ayman Fayed; Marvin H. White; Anant K. Agarwal
Source: check_circle
Crossref

1200-V SiC MOSFET Short-Circuit Ruggedness Evaluation and Methods to Improve Withstand Time

IEEE Journal of Emerging and Selected Topics in Power Electronics
2022-10 | Journal article
Contributors: Diang Xing; Boxue Hu; Minseok Kang; Yue Zhang; Suvendu Nayak; Jin Wang; Anant K. Agarwal
Source: check_circle
Crossref

Experimental Determination of Interface Trap Density and Fixed Positive Oxide Charge in Commercial 4H-SiC Power MOSFETs

IEEE Access
2021 | Journal article
Contributors: Susanna Yu; Marvin H. White; Anant K. Agarwal
Source: check_circle
Crossref

JFET Region Design Trade-Offs of 650 V 4H-SiC Planar Power MOSFETs

Solid State Electronics Letters
2021-12 | Journal article
Contributors: Tianshi Liu; Shengnan Zhu; Arash Salemi; David Sheridan; Marvin H. White; Anant K. Agarwal
Source: check_circle
Crossref

The Road to a Robust and Affordable SiC Power MOSFET Technology

Energies
2021-12-09 | Journal article
Contributors: Hema Lata Rao Maddi; Susanna Yu; Shengnan Zhu; Tianshi Liu; Limeng Shi; Minseok Kang; Diang Xing; Suvendu Nayak; Marvin H. White; Anant K. Agarwal
Source: check_circle
Crossref
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