Personal information

Experimental physics, Materials, Phase-Change-Memories (PCMs), Resistive Random-Access Memories (ReRAMs), Neuromorphic Computing, Devices, X-ray based characterization, Synchrotron
Germany, Italy, Switzerland

Activities

Employment (1)

IBM Zurich Research Laboratory: Zurich, Zürich, CH

Employment
Source: Self-asserted source
Valeria Bragaglia

Works (30)

Analytical modelling of the transport in analog filamentary conductive-metal-oxide/HfOx ReRAM devices

Nanoscale Horizons
2024 | Journal article
Contributors: Donato Francesco Falcone; Stephan Menzel; Tommaso Stecconi; Matteo Galetta; Antonio La Porta; Bert Jan Offrein; Valeria Bragaglia
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Crossref

Unsupervised local learning based on voltage-dependent synaptic plasticity for resistive and ferroelectric synapses

2024-11-08 | Preprint
Contributors: Fabien Alibart; Nikhil Garg; Ismael Balafrej; Joao Palhares; Laura Begon-Lours; Davide Florini; Donato Falcone; Tommaso Stecconi; Valeria Bragaglia; Bert Offrein et al.
Source: check_circle
Crossref

Actor-Critic Networks with Analogue Memristors Mimicking Reward-Based Learning

2024-03-21 | Preprint
Contributors: Kevin Portner; Till Zellweger; Flavio Martinelli; Laura Bégon-Lours; Valeria Bragaglia; Christoph Weilenmann; Daniel Jubin; Donato Falcone; Felix Hermann; Oscar Hrynkevych et al.
Source: check_circle
Crossref

A multi-timescale synaptic weight based on ferroelectric hafnium zirconium oxide

Communications Materials
2023-02-17 | Journal article
Contributors: Mattia Halter; Laura Bégon-Lours; Marilyne Sousa; Youri Popoff; Ute Drechsler; Valeria Bragaglia; Bert Jan Offrein
Source: check_circle
Crossref

Structural Assessment of Interfaces in Projected Phase-Change Memory

Nanomaterials
2022-05-17 | Journal article
Contributors: Valeria Bragaglia; Vara Prasad Jonnalagadda; Marilyne Sousa; Syed Ghazi Sarwat; Benedikt Kersting; Abu Sebastian
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Crossref
grade
Preferred source (of 2)‎

Hints for a General Understanding of the Epitaxial Rules for van der Waals Epitaxy from Ge‐Sb‐Te Alloys

Advanced Materials Interfaces
2022-03 | Journal article
Part of ISSN: 2196-7350
Part of ISSN: 2196-7350
Source: Self-asserted source
Valeria Bragaglia

ELECTROCHEMICAL DEVICE OF VARIABLE ELECTRICAL CONDUCTANCE

2022-02-15 | Patent
Source: Self-asserted source
Valeria Bragaglia

Epitaxial growth of GeTe/Sb2Te3 superlattices

Materials Science in Semiconductor Processing
2022-01 | Journal article
Part of ISSN: 1369-8001
Source: Self-asserted source
Valeria Bragaglia

A BEOL Compatible, 2-Terminals, Ferroelectric Analog Non-Volatile Memory

2021-04-08 | Conference paper
Contributors: Laura Begon-Lours; Mattia Halter; Diana Davila Pineda; Youri Popoff; Valeria Bragaglia; Antonio La Porta; Daniel Jubin; Jean Fompeyrine; Bert Jan Offrein
Source: check_circle
Crossref

Phonon anharmonicities and ultrafast dynamics in epitaxial Sb2Te3

Scientific Reports
2020-12 | Journal article
Part of ISSN: 2045-2322
Source: Self-asserted source
Valeria Bragaglia

State dependence and temporal evolution of resistance in projected phase change memory

Scientific Reports
2020-12 | Journal article
Part of ISSN: 2045-2322
Source: Self-asserted source
Valeria Bragaglia

Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights

ACS Applied Materials & Interfaces
2020-04-15 | Journal article
Part of ISSN: 1944-8244
Part of ISSN: 1944-8252
Source: Self-asserted source
Valeria Bragaglia

Disordering process of GeSb2Te4 induced by ion irradiation

Journal of Physics D: Applied Physics
2020-03-25 | Journal article
Part of ISSN: 0022-3727
Part of ISSN: 1361-6463
Source: Self-asserted source
Valeria Bragaglia

Electrical and optical properties of epitaxial binary and ternary GeTe-Sb2Te3 alloys

Scientific Reports
2018-12 | Journal article
Part of ISSN: 2045-2322
Source: Self-asserted source
Valeria Bragaglia

Mapping the band structure of GeSbTe phase change alloys around the Fermi level

Communications Physics
2018-12 | Journal article
Part of ISSN: 2399-3650
Source: Self-asserted source
Valeria Bragaglia

Designing epitaxial GeSbTe alloys by tuning the phase, the composition, and the vacancy ordering

Journal of Applied Physics
2018-06-07 | Journal article
Part of ISSN: 0021-8979
Part of ISSN: 1089-7550
Source: Self-asserted source
Valeria Bragaglia

Role of interfaces on the stability and electrical properties of Ge2Sb2Te5 crystalline structures

Scientific Reports
2017-12 | Journal article
Part of ISSN: 2045-2322
Source: Self-asserted source
Valeria Bragaglia

Thermal annealing studies of GeTe-Sb2Te3 alloys with multiple interfaces

AIP Advances
2017-08 | Journal article
Part of ISSN: 2158-3226
Source: Self-asserted source
Valeria Bragaglia

Chemical and structural arrangement of the trigonal phase in GeSbTe thin films

Nanotechnology
2017-02-10 | Journal article
Part of ISSN: 0957-4484
Part of ISSN: 1361-6528
Source: Self-asserted source
Valeria Bragaglia

Epitaxial Ge2Sb2Te5 probed by single cycle THz pulses of coherent synchrotron radiation

Applied Physics Letters
2016-10-03 | Journal article
Part of ISSN: 0003-6951
Part of ISSN: 1077-3118
Source: Self-asserted source
Valeria Bragaglia

Erratum: Corrigendum: Metal - Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials

Scientific Reports
2016-08 | Journal article
Part of ISSN: 2045-2322
Source: Self-asserted source
Valeria Bragaglia

Sub-nanometre resolution of atomic motion during electronic excitation in phase-change materials

Scientific Reports
2016-08 | Journal article
Part of ISSN: 2045-2322
Source: Self-asserted source
Valeria Bragaglia

Intermixing during Epitaxial Growth of van der Waals Bonded Nominal GeTe/Sb2Te3 Superlattices

Crystal Growth & Design
2016-07-06 | Journal article
Part of ISSN: 1528-7483
Part of ISSN: 1528-7505
Source: Self-asserted source
Valeria Bragaglia

Far-Infrared and Raman Spectroscopy Investigation of Phonon Modes in Amorphous and Crystalline Epitaxial GeTe-Sb2Te3 Alloys

Scientific Reports
2016-06 | Journal article
Part of ISSN: 2045-2322
Source: Self-asserted source
Valeria Bragaglia

Laser induced structural transformation in chalcogenide based superlattices

Applied Physics Letters
2016-05-30 | Journal article
Part of ISSN: 0003-6951
Part of ISSN: 1077-3118
Source: Self-asserted source
Valeria Bragaglia

Revisiting the Local Structure in Ge-Sb-Te based Chalcogenide Superlattices

Scientific Reports
2016-04 | Journal article
Part of ISSN: 2045-2322
Source: Self-asserted source
Valeria Bragaglia

Metal - Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials

Scientific Reports
2016-04-29 | Journal article
Part of ISSN: 2045-2322
Source: Self-asserted source
Valeria Bragaglia

Laser-driven switching dynamics in phase change materials investigated by time-resolved X-ray absorption spectroscopy

Phase Transitions
2015-01-02 | Journal article
Part of ISSN: 0141-1594
Part of ISSN: 1029-0338
Source: Self-asserted source
Valeria Bragaglia

Structural change upon annealing of amorphous GeSbTe grown on Si(111)

Journal of Applied Physics
2014-08-07 | Journal article
Part of ISSN: 0021-8979
Part of ISSN: 1089-7550
Source: Self-asserted source
Valeria Bragaglia
grade
Preferred source (of 2)‎

Surface Reconstruction-Induced Coincidence Lattice Formation Between Two-Dimensionally Bonded Materials and a Three-Dimensionally Bonded Substrate

Nano Letters
2014-06-11 | Journal article
Part of ISSN: 1530-6984
Part of ISSN: 1530-6992
Source: Self-asserted source
Valeria Bragaglia
grade
Preferred source (of 2)‎

Peer review (2 reviews for 2 publications/grants)

Review activity for Advanced electronic materials (1)
Review activity for Nature communications (1)