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Education and qualifications (2)

Arizona State University: Tempe, AZ, US

2013-08 to 2017-08 | Ph.D (Electrical Engineering)
Education
Source: Self-asserted source
Wenhao Chen

Carnegie Mellon University: Pittsburgh, PA, US

2012-01 to 2012-12 | M. S. (Materials Science and Engineering)
Education
Source: Self-asserted source
Wenhao Chen

Works (17)

<italic>In Situ</italic> Synaptic Programming of CBRAM in an Ionizing Radiation Environment

IEEE Transactions on Nuclear Science
2018-01 | Journal article
Contributors: J. L. Taggart; W. Chen; Y. Gonzalez-Velo; H. J. Barnaby; K. Holbert; M. N. Kozicki
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Crossref

A Comparative Study on TID Influenced Lateral Diffusion of Group 11 Metals into GexS<sub>1-x </sub>and Ge<sub>x</sub>Se<sub>1-x</sub> Systems: A Flexible Radiation Sensor Development Perspective

IEEE Transactions on Nuclear Science
2017 | Journal article
Contributors: Adnan Mahmud; Yago Gonzalez-Velo; Hugh J. Barnaby; Michael N. Kozicki; Maria Mitkova; Keith E. Holbert; Michael Goryll; Terry L. Alford; Jennifer L. Taggart; Wenhao Chen
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Crossref

SiO2 based conductive bridging random access memory

Journal of Electroceramics
2017-12-15 | Journal article
Contributors: Wenhao Chen; Stefan Tappertzhofen; Hugh J. Barnaby; Michael N. Kozicki
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Crossref

Low-Temperature Characterization of Cu–Cu:Silica-Based Programmable Metallization Cell

IEEE Electron Device Letters
2017-09 | Journal article
Contributors: W. Chen; N. Chamele; Y. Gonzalez-Velo; H. J. Barnaby; M. N. Kozicki
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Crossref

Total-Ionizing-Dose Effects on Resistance Stability of Programmable Metallization Cell Based Memory and Selectors

IEEE Transactions on Nuclear Science
2016 | Journal article
Contributors: Wenhao Chen; Runchen Fang; Hugh J. Barnaby; Mehmet Bugra Balaban; Yago Gonzalez-Velo; Jennifer Lynn Taggart; Adnan Mahmud; Keith Holbert; Arthur H. Edwards; Michael N. Kozicki
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Crossref

A CMOS-compatible electronic synapse device based on Cu/SiO2/W programmable metallization cells

Nanotechnology
2016-06-24 | Journal article
Contributors: Wenhao Chen; Runchen Fang; Mehmet B Balaban; Weijie Yu; Yago Gonzalez-Velo; Hugh J Barnaby; Michael N Kozicki
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Crossref

Impedance Spectroscopy of Programmable Metallization Cells With a Thin SiO2Switching Layer

IEEE Electron Device Letters
2016-05 | Journal article
Contributors: W. Chen; H. J. Barnaby; M. N. Kozicki
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Crossref

Volatile and Non-Volatile Switching in Cu-SiO2Programmable Metallization Cells

IEEE Electron Device Letters
2016-05 | Journal article
Contributors: W. Chen; H. J. Barnaby; M. N. Kozicki
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Crossref

A Study of Gamma-Ray Exposure of Cu–SiO$_2$ Programmable Metallization Cells

IEEE Transactions on Nuclear Science
2015-12-01 | Journal article
Contributors: W. Chen; H. J. Barnaby; M. N. Kozicki; A. H. Edwards; Y. Gonzalez-Velo; R. Fang; K. E. Holbert; S. Yu; W. Yu
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Crossref

Dislocation impact on resistive switching in single-crystal SrTiO3

Source: Self-asserted source
Wenhao Chen

Elimination of high transient currents and electrode damage during electroformation of TiO2-based resistive switching devices

Source: Self-asserted source
Wenhao Chen

Fabrication and luminescent properties of red phosphor M3BO6: Eu3+ (M= La, Y)

Source: Self-asserted source
Wenhao Chen

Flexible Ag-ChG Radiation Sensors: Limit of Detection and Dynamic Range Optimization Through Physical Design Tuning

Source: Self-asserted source
Wenhao Chen

In Situ TEM Imaging of Defect Dynamics under Electrical Bias in Resistive Switching Rutile-TiO2

Source: Self-asserted source
Wenhao Chen

Low Temperature Characteristics of HfOx-Based Resistive Random Access Memory

Source: Self-asserted source
Wenhao Chen

Radiation Hardening by Process of CBRAM resistance switching cells

Source: Self-asserted source
Wenhao Chen

Total ionizing dose effect of γ-ray radiation on the switching characteristics and filament stability of HfOx resistive random access memory

Source: Self-asserted source
Wenhao Chen