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Works (4)

Thermally Stable InGaSnO Thin-Film Transistors Using Crystalline Oxide Semiconductor

IEEE Transactions on Electron Devices
2025 | Journal article
DOI: 10.1109/TED.2025.3546600
Contributors: Taebin Lim; Sunaina Priyadarshi; Solbee Lee; Jiwon Sun; Junyeong Kim; Byeonggwan Kim; Seungmin Woo; Seungho Lee; Jinbaek Bae; Yurim Kim et al.
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Low-Temperature Crystallization of Amorphous InGaO by Ar Plasma Treatment for Thin Film Transistors

IEEE Electron Device Letters
2025-04 | Journal article
DOI: 10.1109/LED.2025.3535880
Contributors: Jiwon Sun; Taebin Lim; Byeonggwan Kim; Keunwoo Kim; Md. Hasnat Rabbi; Jin Jang
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Reduced Dynamic Gate Pulse Stress Instability in Dual Gate a-InGaZnO Thin Film Transistors

IEEE Electron Device Letters
2023 | Journal article
DOI: 10.1109/LED.2023.3235979
Contributors: Sunaina Priyadarshi; Mohammad Masum Billah; Taebin Lim; Sadia Sayed Urmi; Jin Jang
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Artificial Synaptic InGaZnO Thin-Film Transistor With Long Retention Behavior Using Al2O3/SiO2 Gate Insulator

IEEE Transactions on Electron Devices
2023-01 | Journal article
DOI: 10.1109/TED.2022.3224419
Contributors: Taebin Lim; Jinbaek Bae; Byungju Han; Arqum Ali; Jin Jang
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