Juan Du (0000-0003-2077-3337)

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北京工业大学: 北京, CN

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Juan Du

北京大学: 北京, CN

(物理学院)

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Juan Du

Flexible chalcogenide perovskite Ba3Te2S7 with high electron mobility and strong optical absorption ability

Journal of Materials Chemistry C

2024 | Journal article

DOI: 10.1039/D3TC04221A

Contributors: Juan Du; Jun-jie Shi; Jin-xiang Deng; Cong-xin Xia

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A new perspective on ductile high-Tc superconductors under ambient pressure: few-hydrogen metal-bonded hydrides

Journal of Physics: Condensed Matter

2024-11-06 | Journal article

DOI: 10.1088/1361-648X/ad68b3

Contributors: Jun-jie Shi; Chong Tian; Yong He; Shi-ming Liu; Yao-hui Zhu; Juan Du; Hong-xia Zhong; Xinqiang Wang

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Effects of Ta concentration on microstructure, optical and optoelectronic properties of Ga2O3:Ta films

Vacuum

2024-06 | Journal article

DOI: 10.1016/j.vacuum.2024.113142

Contributors: Xue Meng; Jinxiang Deng; Ruidong Li; Qing Zhang; Kun Tian; Jiawei Xu; Xiaolei Yang; Lingjia Meng; Juan Du; Guisheng Wang

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Tunable valley polarization in two-dimensional H-HfI2/T-VBrCl van der Waals heterostructure

Computational Materials Science

2024-01 | Journal article

DOI: 10.1016/j.commatsci.2023.112627

Contributors: Congling Bai; Jia Li; Can Yang; Xiaoli Liu; Ze Liu; Xiujuan Mao; Junjie Shi

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3D graphene-like semiconductor Ba2HfTe4 with electronic structure similar to graphene and bandgap close to silicon

Cell Reports Physical Science

2021-12 | Journal article

DOI: 10.1016/j.xcrp.2021.100658

Part of ISSN: 2666-3864

Contributors: Juan Du

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Juan Du

Cerium-based lead-free chalcogenide perovskites for photovoltaics

Physical Review B

2021-12-27 | Journal article

DOI: 10.1103/physrevb.104.235206

Part of ISSN: 2469-9950

Part of ISSN: 2469-9969

Contributors: Juan Du

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Juan Du

Cross‐Substitution Promoted Ultrawide Bandgap up to 4.5 eV in a 2D Semiconductor: Gallium Thiophosphate

Advanced Materials

2021-06 | Journal article

DOI: 10.1002/adma.202008761

Part of ISSN: 0935-9648

Part of ISSN: 1521-4095

Contributors: Juan Du

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Juan Du

2D Ca3Sn2S7 Chalcogenide Perovskite: A Graphene‐Like Semiconductor with Direct Bandgap 0.5 eV and Ultrahigh Carrier Mobility 6.7x104 cm2 V−1 s−1

Advanced Materials

2019-12 | Journal article

DOI: 10.1002/adma.201905643

Part of ISSN: 0935-9648

Part of ISSN: 1521-4095

Contributors: Juan Du

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Juan Du

Spin-dependent Dirac electrons and valley polarization in the ferromagnetic stanene/CrI3 van der Waals heterostructure

Physical Review B

2019-11-21 | Journal article

DOI: 10.1103/physrevb.100.195307

Part of ISSN: 2469-9950

Part of ISSN: 2469-9969

Contributors: Juan Du

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Juan Du

Two-dimensional ferromagnetic materials and related van der Waals heterostructures: a first-principle study

Journal of Semiconductors

2019-08-01 | Journal article

DOI: 10.1088/1674-4926/40/8/081509

Part of ISSN: 1674-4926

Part of ISSN: 2058-6140

Contributors: Juan Du

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Juan Du

Effects of Electric Field on the Electronic Structures of Broken-gap Phosphorene/SnX2 (X =S, Se) van der Waals Heterojunctions

Physical Review Applied

2018-11-28 | Journal article

DOI: 10.1103/physrevapplied.10.054064

Part of ISSN: 2331-7019

Contributors: Juan Du

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Juan Du

Two-dimensional n-InSe/p-GeSe(SnS) van der Waals heterojunctions: High carrier mobility and broadband performance

Physical Review B

2018-03-15 | Journal article

DOI: 10.1103/physrevb.97.115416

Part of ISSN: 2469-9950

Part of ISSN: 2469-9969

Contributors: Juan Du

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Juan Du

Asymmetric hydrogenation-induced ferromagnetism in stanene nanoribbons considering electric field and strain effects

Journal of Materials Science

2018-01 | Journal article

DOI: 10.1007/s10853-017-1499-2

Contributors: Wenqi Xiong; Congxin Xia; Juan Du; Tianxing Wang; Yu Jia

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A type-II GeSe/SnS heterobilayer with a suitable direct gap, superior optical absorption and broad spectrum for photovoltaic applications

Journal of Materials Chemistry A

2017 | Journal article

DOI: 10.1039/c7ta02109g

Part of ISSN: 2050-7488

Part of ISSN: 2050-7496

Contributors: Juan Du

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Juan Du

Two-dimensional transition-metal dichalcogenides-based ferromagnetic van der Waals heterostructures

Nanoscale

2017 | Journal article

DOI: 10.1039/c7nr06473j

Part of ISSN: 2040-3364

Part of ISSN: 2040-3372

Contributors: Juan Du

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Juan Du

Modulation of the band structures and optical properties of holey C2N nanosheets by alloying with group IV and V elements

Journal of Materials Chemistry C

2016 | Journal article

DOI: 10.1039/c6tc02469f

Part of ISSN: 2050-7526

Part of ISSN: 2050-7534

Contributors: Juan Du

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Juan Du

Tuning the electronic structures and magnetism of two-dimensional porous C2N via transition metal embedding

Physical Chemistry Chemical Physics

2016 | Journal article

DOI: 10.1039/c6cp03210a

Part of ISSN: 1463-9076

Part of ISSN: 1463-9084

Contributors: Juan Du

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Juan Du

Tunable electronic structures and magnetism in arsenene nanosheets via transition metal doping

Journal of Materials Science

2016-10 | Journal article

DOI: 10.1007/s10853-016-0194-z

Part of ISSN: 0022-2461

Part of ISSN: 1573-4803

Contributors: Juan Du

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Juan Du

First-principles studies on substitutional doping by group IV and VI atoms in the two-dimensional arsenene

2016-03-09 | Journal article

DOI: 10.1016/j.apsusc.2016.03.055

Part of ISSN: 0169-4332

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Juan Du

Preferred source (of 2)‎

Review activity for Environmental technology & innovation. (1)

Review activity for Materials research bulletin. (1)

Review activity for Materials today communications. (9)

Review activity for Nano energy. (2)

Review activity for Next nanotechnology. (2)

Review activity for Physica scripta. (4)

Review activity for Physica. (1)

Review activity for Physics letters. (1)

Review activity for Physics open. (1)

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Juan Du

https://orcid.org/0000-0003-2077-3337

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Employment (1)

北京工业大学: 北京, CN

Education and qualifications (1)

北京大学: 北京, CN

Works (19)

Flexible chalcogenide perovskite Ba3Te2S7 with high electron mobility and strong optical absorption ability

A new perspective on ductile high-Tc superconductors under ambient pressure: few-hydrogen metal-bonded hydrides

Effects of Ta concentration on microstructure, optical and optoelectronic properties of Ga2O3:Ta films

Tunable valley polarization in two-dimensional H-HfI2/T-VBrCl van der Waals heterostructure

3D graphene-like semiconductor Ba2HfTe4 with electronic structure similar to graphene and bandgap close to silicon

Cerium-based lead-free chalcogenide perovskites for photovoltaics

Cross‐Substitution Promoted Ultrawide Bandgap up to 4.5 eV in a 2D Semiconductor: Gallium Thiophosphate

2D Ca3Sn2S7 Chalcogenide Perovskite: A Graphene‐Like Semiconductor with Direct Bandgap 0.5 eV and Ultrahigh Carrier Mobility 6.7x104 cm2 V−1 s−1

Spin-dependent Dirac electrons and valley polarization in the ferromagnetic stanene/CrI3 van der Waals heterostructure

Two-dimensional ferromagnetic materials and related van der Waals heterostructures: a first-principle study

Effects of Electric Field on the Electronic Structures of Broken-gap Phosphorene/SnX2 (X =S, Se) van der Waals Heterojunctions

Two-dimensional n-InSe/p-GeSe(SnS) van der Waals heterojunctions: High carrier mobility and broadband performance

Asymmetric hydrogenation-induced ferromagnetism in stanene nanoribbons considering electric field and strain effects

A type-II GeSe/SnS heterobilayer with a suitable direct gap, superior optical absorption and broad spectrum for photovoltaic applications

Two-dimensional transition-metal dichalcogenides-based ferromagnetic van der Waals heterostructures

Modulation of the band structures and optical properties of holey C2N nanosheets by alloying with group IV and V elements

Tuning the electronic structures and magnetism of two-dimensional porous C2N via transition metal embedding

Tunable electronic structures and magnetism in arsenene nanosheets via transition metal doping

First-principles studies on substitutional doping by group IV and VI atoms in the two-dimensional arsenene

Peer review (22 reviews for 9 publications/grants)