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Scopus Author ID: 8698106400

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Employment (2)

Institute of Materials Research and Engineering: Singapore, Singapore, SG

2002-07-22 to present | Senior Scientist III/Group Leader (Electronic Materials)
Employment
Source: Self-asserted source
Sudhiranjan Tripathy

National University of Singapore: Singapore, Singapore, SG

2000-10-30 to 2002-06-30 | Research Fellow (Electrical and Computer Engineering)
Employment
Source: Self-asserted source
Sudhiranjan Tripathy

Education and qualifications (4)

Indian Institute of Technology Delhi: New Delhi, Delhi, IN

1996-07-15 to 2000-08-30 | Research Scholar (Physics)
Qualification
Source: Self-asserted source
Sudhiranjan Tripathy

Indian Institute of Technology Delhi: New Delhi, Delhi, IN

1994-07-15 to 1996-05-31 | M.Sc. (Physics)
Education
Source: Self-asserted source
Sudhiranjan Tripathy

Maharaja Purna Chandra College, Baripada: Baripada, Orissa, IN

1991-07-09 to 1994-06-30 | B.Sc. (Hons) (Physics)
Education
Source: Self-asserted source
Sudhiranjan Tripathy

M. K. C. High School: Baripada, Odisha, IN

1983 to 1988 | Higher Secondary
Education
Source: Self-asserted source
Sudhiranjan Tripathy

Funding (10)

Aquarius

2023 to 2026 | Contract
Industry (Singapore, SG)
Source: Self-asserted source
Sudhiranjan Tripathy

Development of a defect inspection system

2021-05 to 2022-10 | Contract
IMRE and Visiontec (Singapore, SG)
Source: Self-asserted source
Sudhiranjan Tripathy

GaN Epiwafers for Power and RF Electronics

2021-04 to 2023-03 | Contract
IMRE and IGSS-GAN (Singapore, SG)
Source: Self-asserted source
Sudhiranjan Tripathy

Development of 150 mm diameter 4H-SiC wafers

2019-05 to 2022-10 | Contract
IMRE-WaferLead (Singapore, SG)
Source: Self-asserted source
Sudhiranjan Tripathy

Defect Reduction in 200 mm 4H-SiC SiC

2019-02 to 2021-01 | Grant
A*STAR-SERC IAF-PP (Singapore, SG)
Source: Self-asserted source
Sudhiranjan Tripathy

GaN-on-Silicon for high voltage Electronics

2017-04 to 2017-09 | Contract
IGSS-GaN, A*STAR-IMRE (Singapore, SG)
Source: Self-asserted source
Sudhiranjan Tripathy

Optoelectronic Integration using GaAs and GaN technologies

2016-03 to 2018-04 | Contract
ODIS-Inc POET, A*STAR-IMRE (San Jose, CA, US)
Source: Self-asserted source
Sudhiranjan Tripathy

GaN growth on 8-inch Si

2011-04 to 2014-09 | Grant
A*STAR (Singapore, SG)
Source: Self-asserted source
Sudhiranjan Tripathy

GaN on SOI/Si

2010 to 2012 | Grant
ETPL, A*STAR (Singapore, SG)
Source: Self-asserted source
Sudhiranjan Tripathy

SPEOS: surface-plasmons for enhanced optical spectroscopy

2008 to 2010 | Grant
Merlion Program France-Singapore, A*STAR-IMRE (Singapore, SG)
Source: Self-asserted source
Sudhiranjan Tripathy

Works (50 of 295)

Items per page:
Page 1 of 6

Experimental Evaluation of the Response of AlGaN/GaN UV Photodetectors With Square and Hexagonal Nanohole Arrays

IEEE Sensors Journal
2025-01-15 | Journal article
DOI: 10.1109/JSEN.2024.3502652
Contributors: Ahmed S. Razeen; Dharmraj Kotekar-Patil; Jesper Ong; K. Radhakrishnan; Sudhiranjan Tripathy
Source: check_circle
Crossref

Pd/AlGaN/GaN HEMT-Based Room Temperature Hydrogen Gas Sensor

IEEE Sensors Journal
2024-12-15 | Journal article
DOI: 10.1109/JSEN.2024.3487877
Contributors: Vikas Pandey; Amit Kumar; Ahmed S. Razeen; Ankur Gupta; Sudhiranjan Tripathy; Mahesh Kumar
Source: check_circle
Crossref

Structural, optical, and electrical characterization and performance comparison of AlGaN/GaN HEMT structures with different buffer layers

Vacuum
2024-01 | Journal article
DOI: 10.1016/j.vacuum.2023.112704
Contributors: Ahmed S. Razeen; Gao Yuan; Jesper Ong; Hui Kim Hui; K. Radhakrishnan; Sudhiranjan Tripathy
Source: check_circle
Crossref

AlGaN/GaN HEMT Based pH Detection Using Atomic Layer Deposition of Al2O3 as Sensing Membrane and Passivation

IEEE Transactions on Nanotechnology
2023 | Journal article
DOI: 10.1109/TNANO.2023.3305360
Contributors: Aasif Mohammad Bhat; C. Periasamy; Ritu Poonia; Arathy Varghese; Nawaz Shafi; Sudhiranjan Tripathy
Source: check_circle
Crossref

Microstructural characterization of AlxGa1−xN/GaN high electron mobility transistor layers on 200 mm Si(111) substrates

Applied Physics Letters
2023-10-02 | Journal article
DOI: 10.1063/5.0155944
Contributors: Zainul Aabdin; Zackaria Mahfoud; Ahmed S. Razeen; Hui Kim Hui; Dharmraj K. Patil; Gao Yuan; Jesper Ong; Sudhiranjan Tripathy
Source: check_circle
Crossref

Ultrasensitive Real-Time Detection of Pb2+ Ions Using g-C3N4 Nanosheets

IEEE Sensors Journal
2023-05-15 | Journal article
DOI: 10.1109/JSEN.2023.3264969
Contributors: Nipun Sharma; Arun Kumar Sakthivel; Subbiah Alwarrapan; Ankur Gupta; Ahmed S. Razeen; Dharmraj Subhash Kotekar Patil; Sudhiranjan Tripathy; Mahesh Kumar
Source: check_circle
Crossref

1T and 2H heterophase MoS<sub>2</sub>for enhanced sensitivity of GaN transistor-based mercury ions sensor

Nanotechnology
2022 | Journal article
DOI: 10.1088/1361-6528/ac5cff
EID:

2-s2.0-85128248441

Part of ISSN: 13616528 09574484
Contributors: Sharma, N.; Nigam, A.; Bin Dolmanan, S.; Gupta, A.; Tripathy, S.; Kumar, M.
Source: Self-asserted source
Sudhiranjan Tripathy via Scopus - Elsevier

MoS<sub>2</sub> functionalized AlGaN/GaN transistor based room temperature NO<sub>2</sub> gas sensor

Sensors and Actuators A: Physical
2022 | Journal article
DOI: 10.1016/j.sna.2022.113647
EID:

2-s2.0-85131218557

Part of ISSN: 09244247
Contributors: Sharma, N.; Kumar, S.; Gupta, A.; Dolmanan, S.B.; Patil, D.S.K.; Tan, S.T.; Tripathy, S.; Kumar, M.
Source: Self-asserted source
Sudhiranjan Tripathy via Scopus - Elsevier

Patterning at the Resolution Limit of Commercial Electron Beam Lithography

Nano Letters
2022 | Journal article
DOI: 10.1021/acs.nanolett.2c02339
EID:

2-s2.0-85137863985

Part of ISSN: 15306992 15306984
Contributors: Saifullah, M.S.M.; Asbahi, M.; Neo, D.C.J.; Mahfoud, Z.; Tan, H.R.; Ha, S.T.; Dwivedi, N.; Dutta, T.; Bin Dolmanan, S.; Aabdin, Z. et al.
Source: Self-asserted source
Sudhiranjan Tripathy via Scopus - Elsevier

Recent progress on group III nitride nanostructure-based gas sensors

Journal of Materials Chemistry C
2022 | Journal article
DOI: 10.1039/d2tc02103j
EID:

2-s2.0-85136882736

Part of ISSN: 20507534
Contributors: Sharma, N.; Pandey, V.; Gupta, A.; Tan, S.T.; Tripathy, S.; Kumar, M.
Source: Self-asserted source
Sudhiranjan Tripathy via Scopus - Elsevier

Angstrom-Scale Transparent Overcoats: Interfacial Nitrogen-Driven Atomic Intermingling Promotes Lubricity and Surface Protection of Ultrathin Carbon

Nano Letters
2021 | Journal article
DOI: 10.1021/acs.nanolett.1c01997
EID:

2-s2.0-85118880157

Part of ISSN: 15306992 15306984
Contributors: Dwivedi, N.; Neogi, A.; Patra, T.K.; Dhand, C.; Dutta, T.; Yeo, R.J.; Kumar, R.; Hashmi, S.A.R.; Srivastava, A.K.; Tripathy, S. et al.
Source: Self-asserted source
Sudhiranjan Tripathy via Scopus - Elsevier

Development of semiconductor based heavy metal ion sensors for water analysis: A review

Sensors and Actuators A: Physical
2021-10 | Journal article
DOI: 10.1016/j.sna.2021.112879
Contributors: Adarsh Nigam; Nipun Sharma; Sudhiranjan Tripathy; Mahesh Kumar
Source: check_circle
Crossref
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Fabrication and Modeling-Based Performance Analysis of Circular GaN MOSHEMT-Based Electrochemical Sensors

IEEE Sensors Journal
2021-02-15 | Journal article
DOI: 10.1109/JSEN.2020.3032175
Contributors: Arathy Varghese; Chinnamuthan Periasamy; Lava Bhargava; Surani Bin Dolmanan; Sudhiranjan Tripathy
Source: check_circle
Crossref
grade
Preferred source (of 2)‎

Deep Submicron Normally Off AlGaN/GaN MOSFET on Silicon with V<inf>TH</inf> &gt; 5V and On-Current &gt; 0.5 A mm<sup>−1</sup>

Physica Status Solidi (A) Applications and Materials Science
2020 | Journal article
DOI: 10.1002/pssa.201900709
EID:

2-s2.0-85077838071
Contributors: Kumar, S.; Vura, S.; Dolmanan, S.B.; Tripathy, S.; Muralidharan, R.; Nath, D.N.
Source: Self-asserted source
Sudhiranjan Tripathy via Scopus - Elsevier

Meandering Gate Edges for Breakdown Voltage Enhancement in AlGaN/GaN High Electron Mobility Transistors

Physica Status Solidi (A) Applications and Materials Science
2020 | Journal article
DOI: 10.1002/pssa.201900766
EID:

2-s2.0-85077892060
Contributors: Kumar, S.; Dolmanan, S.B.; Tripathy, S.; Muralidharan, R.; Nath, D.N.
Source: Self-asserted source
Sudhiranjan Tripathy via Scopus - Elsevier

Photodegradation of 4-nitrophenol over B-doped TiO<sub>2</sub> nanostructure: effect of dopant concentration, kinetics, and mechanism

Environmental Science and Pollution Research
2020 | Journal article
DOI: 10.1007/s11356-019-06674-x
EID:

2-s2.0-85078623902
Contributors: Yadav, V.; Verma, P.; Sharma, H.; Tripathy, S.; Saini, V.K.
Source: Self-asserted source
Sudhiranjan Tripathy via Scopus - Elsevier

Real time detection of Hg<sup>2+</sup> ions using MoS<sub>2</sub> functionalized AlGaN/GaN high electron mobility transistor for water quality monitoring

Sensors and Actuators, B: Chemical
2020 | Journal article
DOI: 10.1016/j.snb.2020.127832
EID:

2-s2.0-85079052519
Contributors: Nigam, A.; Goel, N.; Bhat, T.N.; Tawabur Rahman, M.; Dolmanan, S.B.; Qiao, Q.; Tripathy, S.; Kumar, M.
Source: Self-asserted source
Sudhiranjan Tripathy via Scopus - Elsevier

Room-Temperature Patterning of Nanoscale MoS<sub>2</sub> under an Electron Beam

ACS Applied Materials and Interfaces
2020 | Journal article
DOI: 10.1021/acsami.9b22229
EID:

2-s2.0-85083076991
Contributors: Saifullah, M.S.M.; Asbahi, M.; Binti-Kamran Kiyani, M.; Liow, S.S.; Bin Dolmanan, S.; Yong, A.M.; Ong, E.A.H.; Ibn Saifullah, A.; Tan, H.R.; Dwivedi, N. et al.
Source: Self-asserted source
Sudhiranjan Tripathy via Scopus - Elsevier

Slippery and Wear-Resistant Surfaces Enabled by Interface Engineered Graphene

Nano Letters
2020 | Journal article
DOI: 10.1021/acs.nanolett.9b03650
EID:

2-s2.0-85078734435

Part of ISSN: 15306992 15306984
Contributors: Dwivedi, N.; Patra, T.; Lee, J.-B.; Yeo, R.J.; Srinivasan, S.; Dutta, T.; Sasikumar, K.; Dhand, C.; Tripathy, S.; Saifullah, M.S.M. et al.
Source: Self-asserted source
Sudhiranjan Tripathy via Scopus - Elsevier

Strain-induced bimetallic nanoparticles-TiO<sub>2</sub> nanohybrids for harvesting light energy

Applied Surface Science
2020 | Journal article
DOI: 10.1016/j.apsusc.2020.145416
EID:

2-s2.0-85078994107
Contributors: Bamola, P.; Dwivedi, C.; Gautam, A.; Sharma, M.; Tripathy, S.; Mishra, A.; Sharma, H.
Source: Self-asserted source
Sudhiranjan Tripathy via Scopus - Elsevier

Thermoelectric Properties of Substoichiometric Electron Beam Patterned Bismuth Sulfide

ACS Applied Materials and Interfaces
2020 | Journal article
DOI: 10.1021/acsami.0c06829
EID:

2-s2.0-85089709204

Part of ISSN: 19448252 19448244
Contributors: Recatala-Gomez, J.; Ng, H.K.; Kumar, P.; Suwardi, A.; Zheng, M.; Asbahi, M.; Tripathy, S.; Nandhakumar, I.; Saifullah, M.S.M.; Hippalgaonkar, K.
Source: Self-asserted source
Sudhiranjan Tripathy via Scopus - Elsevier

Boosting contact sliding and wear protection via atomic intermixing and tailoring of nanoscale interfaces

Science Advances
2019 | Journal article
DOI: 10.1126/sciadv.aau7886
EID:

2-s2.0-85060082084
Contributors: Dwivedi, N.; Yeo, R.J.; Dhand, C.; Risan, J.; Nay, R.; Tripathy, S.; Rajauria, S.; Saifullah, M.S.M.; Sankaranarayanan, S.K.R.S.; Yang, H. et al.
Source: Self-asserted source
Sudhiranjan Tripathy via Scopus - Elsevier

Deep sub micron n ormally off AlGaN/GaN MOSFET on silicon with V<sub>TH</sub>&gt; 5V and on Current &gt; 0.5 A/mm

arXiv
2019 | Other
EID:

2-s2.0-85094291708
Contributors: Kumar, S.; Vura, S.; Dolmanan, S.B.; Tripathy, S.; Muralidharan, R.; Nath, D.N.
Source: Self-asserted source
Sudhiranjan Tripathy via Scopus - Elsevier

Effect of TaN intermediate layer on the back contact reaction of sputter-deposited Cu poor Cu <inf>2</inf> ZnSnS <inf>4</inf> and Mo

Applied Surface Science
2019 | Journal article
DOI: 10.1016/j.apsusc.2018.11.227
EID:

2-s2.0-85057629176
Contributors: Zhuk, S.; Wong, T.K.S.; Tyukalova, E.; Guchhait, A.; Seng, D.H.L.; Tripathy, S.; Wong, T.I.; Sharma, M.; Medina, H.; Duchamp, M. et al.
Source: Self-asserted source
Sudhiranjan Tripathy via Scopus - Elsevier

Linear and Circular AlGaN/AlN/GaN MOS-HEMT-based pH Sensor on Si Substrate: A Comparative Analysis

IEEE Sensors Letters
2019 | Journal article
DOI: 10.1109/LSENS.2019.2909291
EID:

2-s2.0-85073887722

Part of ISSN: 24751472
Contributors: Varghese, A.; Periasamy, C.; Bhargava, L.; Dolmanan, S.B.; Tripathy, S.
Source: Self-asserted source
Sudhiranjan Tripathy via Scopus - Elsevier

Local surface conductivity mapping of single-layer graphene subject to low energy argon bombardment: Energy loss mechanism and defect induction efficiency

Materials Letters
2019 | Journal article
DOI: 10.1016/j.matlet.2019.126638
EID:

2-s2.0-85072185564
Contributors: Basu, T.; Blaskovic, M.; Tripathy, S.; Tian, F.; Singh, R.; Som, T.; Garaj, S.; Anton van Kan, J.
Source: Self-asserted source
Sudhiranjan Tripathy via Scopus - Elsevier

Meandering gate edges for breakdown voltage enhancement in AlGaN/GaN HEMTs

arXiv
2019 | Other
EID:

2-s2.0-85098336741

Part of ISSN: 23318422
Contributors: Kumar, S.; Dolmanan, S.B.; Tripathy, S.; Muralidharan, R.; Nath, D.N.
Source: Self-asserted source
Sudhiranjan Tripathy via Scopus - Elsevier

Optically Coupled Electrically Isolated, Monolithically Integrated Switch Using Al<sub>x</sub>Ga<sub>1- x</sub>N/GaN High Electron Mobility Transistor Structures on Si (111)

ACS Applied Electronic Materials
2019 | Journal article
DOI: 10.1021/acsaelm.8b00084
EID:

2-s2.0-85077876445
Contributors: Kumar, S.; Pratiyush, A.S.; Dolmanan, S.B.; Tan, H.R.; Tripathy, S.; Muralidharan, R.; Nath, D.N.
Source: Self-asserted source
Sudhiranjan Tripathy via Scopus - Elsevier

Ultrasmall designed plasmon resonators by fused colloidal nanopatterning

ACS Applied Materials and Interfaces
2019 | Journal article
DOI: 10.1021/acsami.9b15780
EID:

2-s2.0-85075757047
Contributors: Asbahi, M.; Mahfoud, Z.; Dolmanan, S.B.; Wu, W.; Dong, Z.; Wang, F.; Saifullah, M.S.M.; Tripathy, S.; Chong, K.S.L.; Bosman, M.
Source: Self-asserted source
Sudhiranjan Tripathy via Scopus - Elsevier

Sensitive and Selective Detection of Pb2+ Ions Using 2,5-Dimercapto-1,3,4-Thiadiazole Functionalized AlGaN/GaN High Electron Mobility Transistor

IEEE Electron Device Letters
2019-12 | Journal article
DOI: 10.1109/LED.2019.2947141
Contributors: Adarsh Nigam; Vijendra Singh Bhati; Thirumaleshwara N. Bhat; Surani Bin Dolmanan; Sudhiranjan Tripathy; Mahesh Kumar
Source: check_circle
Crossref
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Comparison of atomic layer deposited Al2O3 and (Ta2O5)0.12(Al2O3)0.88 gate dielectrics on the characteristics of GaN-capped AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors

Journal of Applied Physics
2019-07-21 | Journal article
DOI: 10.1063/1.5049220
Part of ISSN: 0021-8979
Part of ISSN: 1089-7550
Source: Self-asserted source
Sudhiranjan Tripathy
grade
Preferred source (of 2)‎

MPA-GSH Functionalized AlGaN/GaN High-Electron Mobility Transistor-Based Sensor for Cadmium Ion Detection

IEEE Sensors Journal
2019-04-15 | Journal article
DOI: 10.1109/JSEN.2019.2891511
Contributors: Adarsh Nigam; Thirumaleshwara N. Bhat; Vijendra Singh Bhati; Surani Bin Dolmanan; Sudhiranjan Tripathy; Mahesh Kumar
Source: check_circle
Crossref
grade
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Investigation of Ta2O5 as an Alternative High-<inline-formula> <tex-math notation="LaTeX">${k}$ </tex-math> </inline-formula> Dielectric for InAlN/GaN MOS-HEMT on Si

IEEE Transactions on Electron Devices
2019-03 | Journal article
DOI: 10.1109/TED.2019.2893288
Contributors: Sandeep Kumar; Himanshu Kumar; Sandeep Vura; Anamika Singh Pratiyush; Vanjari Sai Charan; Surani B. Dolmanan; Sudhiranjan Tripathy; Rangarajan Muralidharan; Digbijoy N. Nath
Source: check_circle
Crossref
grade
Preferred source (of 2)‎

Dielectric Engineering of HfO<inf>2</inf> Gate-Stacks for Normally-ON GaN HEMTs on 200-mm Silicon Substrates

IEEE Transactions on Electron Devices
2018 | Journal article
DOI: 10.1109/TED.2018.2856773
EID:

2-s2.0-85050994029
Contributors: Chandrasekar, H.; Kumar, S.; Ganapathi, K.L.; Prabhu, S.; Dolmanan, S.B.; Tripathy, S.; Raghavan, S.; Bhat, K.N.; Mohan, S.; Muralidharan, R. et al.
Source: Self-asserted source
Sudhiranjan Tripathy via Scopus - Elsevier

Growth and in-plane undulations of GaAs/Ge superlattices on [001]-oriented Ge and GaAs substrates: formation of regular 3D island-in-network nanostructures

Journal of Materials Chemistry C
2018 | Journal article
DOI: 10.1039/c8tc04799e
EID:

2-s2.0-85058148430
Contributors: Liu, H.; Jin, Y.; Lin, M.; Guo, S.; Yong, A.M.; Dolmanan, S.B.; Tripathy, S.; Wang, X.
Source: Self-asserted source
Sudhiranjan Tripathy via Scopus - Elsevier

Investigation of Ta2O5 as an alternative high κ dielectric for InAlN/GaN MOS HEMT on Si

arXiv
2018 | Other
EID:

2-s2.0-85094997447

Part of ISSN: 23318422
Contributors: Kumar, S.; Kumar, H.; Vura, S.; Pratiyush, A.S.; Charan, V.S.; Dolmanan, S.B.; Tripathy, S.; Muralidharan, R.; Nath, D.N.
Source: Self-asserted source
Sudhiranjan Tripathy via Scopus - Elsevier

Suppression of Ge-based defects and auto-doping of p-type epitaxial GaAs by employing Al<inf>0.3</inf>Ga<inf>0.7</inf>As bi-layer buffer

Journal of Alloys and Compounds
2018 | Journal article
DOI: 10.1016/j.jallcom.2018.06.297
EID:

2-s2.0-85049331406
Contributors: Dalapati, G.K.; Guhathakurata, S.; Das, A.; Mahata, C.; Chakraborty, S.; Bhunia, S.; Seng, H.L.; Chattopadhyay, S.; Bera, L.K.; Tripathy, S.
Source: Self-asserted source
Sudhiranjan Tripathy via Scopus - Elsevier

Dielectric engineering of HfO<sub>2</sub> gate stacks towards normally-ON and normally-OFF GaN HEMTs on silicon

arXiv
2017 | Other
EID:

2-s2.0-85094998318
Contributors: Chandrasekar, H.; Kumar, S.; Ganapathi, K.L.; Prabhu, S.; Dolmanan, S.B.; Tripathy, S.; Raghavan, S.; Bhat, K.N.; Mohan, S.; Muralidharan, R. et al.
Source: Self-asserted source
Sudhiranjan Tripathy via Scopus - Elsevier

Direct observation of thickness and foreign interlayer driven abrupt structural transformation in ultrathin carbon and hybrid silicon nitride/carbon films

Carbon
2017 | Journal article
DOI: 10.1016/j.carbon.2017.01.061
EID:

2-s2.0-85010653535
Contributors: Dwivedi, N.; Yeo, R.J.; Zhang, Z.; Dhand, C.; Tripathy, S.; Bhatia, C.S.
Source: Self-asserted source
Sudhiranjan Tripathy via Scopus - Elsevier

Direct Patterning of Zinc Sulfide on a Sub-10 Nanometer Scale via Electron Beam Lithography

ACS Nano
2017 | Journal article
DOI: 10.1021/acsnano.7b03951
EID:

2-s2.0-85033234151
Contributors: Saifullah, M.S.M.; Asbahi, M.; Binti-Kamran Kiyani, M.; Tripathy, S.; Ong, E.A.H.; Ibn Saifullah, A.; Tan, H.R.; Dutta, T.; Ganesan, R.; Valiyaveettil, S. et al.
Source: Self-asserted source
Sudhiranjan Tripathy via Scopus - Elsevier

Effect of self-heating on electrical characteristics of AlGaN/ GaN HEMT on Si (111) substrate

AIP Advances
2017 | Journal article
DOI: 10.1063/1.4990868
EID:

2-s2.0-85028568609
Contributors: Nigam, A.; Bhat, T.N.; Rajamani, S.; Dolmanan, S.B.; Tripathy, S.; Kumar, M.
Source: Self-asserted source
Sudhiranjan Tripathy via Scopus - Elsevier

Impact of molybdenum out diffusion and interface quality on the performance of sputter grown CZTS based solar cells

Scientific Reports
2017 | Journal article
DOI: 10.1038/s41598-017-01605-7
EID:

2-s2.0-85018329178
Contributors: Dalapati, G.K.; Zhuk, S.; Masudy-Panah, S.; Kushwaha, A.; Seng, H.L.; Chellappan, V.; Suresh, V.; Su, Z.; Batabyal, S.K.; Tan, C.C. et al.
Source: Self-asserted source
Sudhiranjan Tripathy via Scopus - Elsevier

Interface traps at Al<inf>2</inf>O<inf>3</inf>/InAlN/GaN MOS-HEMT -on- 200 mm Si

Solid-State Electronics
2017 | Journal article
DOI: 10.1016/j.sse.2017.09.002
EID:

2-s2.0-85029475565
Contributors: Kumar, S.; Remesh, N.; Dolmanan, S.B.; Tripathy, S.; Raghavan, S.; Muralidharan, R.; Nath, D.N.
Source: Self-asserted source
Sudhiranjan Tripathy via Scopus - Elsevier

Superior wear resistance and low friction in hybrid ultrathin silicon nitride/carbon films: Synergy of the interfacial chemistry and carbon microstructure

Nanoscale
2017 | Journal article
DOI: 10.1039/c7nr03737f
EID:

2-s2.0-85031318119
Contributors: Yeo, R.J.; Dwivedi, N.; Zhang, L.; Zhang, Z.; Lim, C.Y.H.; Tripathy, S.; Bhatia, C.S.
Source: Self-asserted source
Sudhiranjan Tripathy via Scopus - Elsevier

UV detector based on InAlN/GaN-on-Si HEMT stack with photo-to-dark current ratio &gt; 10<sup>7</sup>

Applied Physics Letters
2017 | Journal article
DOI: 10.1063/1.5004024
EID:

2-s2.0-85038937472
Contributors: Kumar, S.; Pratiyush, A.S.; Dolmanan, S.B.; Tripathy, S.; Muralidharan, R.; Nath, D.N.
Source: Self-asserted source
Sudhiranjan Tripathy via Scopus - Elsevier

UV Detector based on InAlN/GaN-on-Si HEMT Stack with Photo-to-Dark Current Ratio &gt; 10<sup>7</sup>

arXiv
2017 | Other
EID:

2-s2.0-85093640718

Part of ISSN: 23318422
Contributors: Kumar, S.; Pratiyush, A.S.; Dolmanan, S.B.; Tripathy, S.; Muralidharan, R.; Nath, D.N.
Source: Self-asserted source
Sudhiranjan Tripathy via Scopus - Elsevier

Annealing pressure and ambient dependent RuO<inf>x</inf> Schottky contacts on InAlN/AlN/GaN-on-Si(111) heterostructure

ECS Journal of Solid State Science and Technology
2016 | Journal article
DOI: 10.1149/2.0171602jss
EID:

2-s2.0-84950145139
Contributors: Kyaw, L.M.; Liu, Y.; Lai, M.Y.; Bhat, T.N.; Tan, H.R.; Lim, P.C.; Tripathy, S.; Chor, E.F.
Source: Self-asserted source
Sudhiranjan Tripathy via Scopus - Elsevier

Atomic Scale Interface Manipulation, Structural Engineering, and Their Impact on Ultrathin Carbon Films in Controlling Wear, Friction, and Corrosion

ACS Applied Materials and Interfaces
2016 | Journal article
DOI: 10.1021/acsami.6b03325
EID:

2-s2.0-84978842665
Contributors: Dwivedi, N.; Yeo, R.J.; Yak, L.J.K.; Satyanarayana, N.; Dhand, C.; Bhat, T.N.; Zhang, Z.; Tripathy, S.; Bhatia, C.S.
Source: Self-asserted source
Sudhiranjan Tripathy via Scopus - Elsevier

Comparative analysis of the effects of tantalum doping and annealing on atomic layer deposited (Ta<inf>2</inf>O<inf>5</inf>)<inf>x</inf>(Al<inf>2</inf>O<inf>3</inf>)<inf>1-</inf><inf>x</inf> as potential gate dielectrics for GaN/Al<inf>x</inf>Ga<inf>1-x</inf>N/GaN high electron mobility transistors

Journal of Applied Physics
2016 | Journal article
DOI: 10.1063/1.4939298
EID:

2-s2.0-84954091123
Contributors: Partida-Manzanera, T.; Roberts, J.W.; Bhat, T.N.; Zhang, Z.; Tan, H.R.; Dolmanan, S.B.; Sedghi, N.; Tripathy, S.; Potter, R.J.
Source: Self-asserted source
Sudhiranjan Tripathy via Scopus - Elsevier

Comparison of the Al<inf>x</inf>Ga<inf>1-x</inf>N/GaN heterostructures grown on silicon-on-insulator and Bulk-Silicon substrates

IEEE Transactions on Electron Devices
2016 | Journal article
DOI: 10.1109/TED.2015.2501410
EID:

2-s2.0-84959536587
Contributors: Tham, W.H.; Ang, D.S.; Bera, L.K.; Dolmanan, S.B.; Bhat, T.N.; Lin, V.K.X.; Tripathy, S.
Source: Self-asserted source
Sudhiranjan Tripathy via Scopus - Elsevier
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Peer review (2 reviews for 2 publications/grants)

Review activity for ACS applied materials & interfaces. (1)
Review activity for Physica status solidi. (1)
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