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Scopus Author ID: 38962197800

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SRM University AP: Mangalagiri, Andhra Pradesh, IN

ASSISTANT PROFESSOR (ECE)
Employment
Source: Self-asserted source
MANAS RANJAN TRIPATHY

Works (36)

Design and Performance Assessment of HfO<sub>2</sub>/SiO<sub>2</sub> Gate Stacked Ge/Si Heterojunction TFET on SELBOX Substrate (GSHJ-STFET)

Silicon
2022 | Journal article
DOI: 10.1007/s12633-022-01898-y
EID:

2-s2.0-85129133871

Part of ISSN: 18769918 1876990X
Contributors: Singh, A.K.; Tripathy, M.R.; Baral, K.; Jit, S.
Source: Self-asserted source
MANAS RANJAN TRIPATHY via Scopus - Elsevier

GaSb/GaAs Type-II Heterojunction TFET on SELBOX Substrate for Dielectric Modulated Label-Free Biosensing Application

IEEE Transactions on Electron Devices
2022 | Journal article
DOI: 10.1109/TED.2022.3191295
EID:

2-s2.0-85135743910

Part of ISSN: 15579646 00189383
Contributors: Singh, A.K.; Tripathy, M.R.; Baral, K.; Jit, S.
Source: Self-asserted source
MANAS RANJAN TRIPATHY via Scopus - Elsevier

Analytical Drain Current Model for Source Pocket Engineered Stacked Oxide SiO<sub>2</sub>/HfO<sub>2</sub> Cylindrical Gate TFETs

Silicon
2021 | Journal article
DOI: 10.1007/s12633-020-00563-6
EID:

2-s2.0-85087387869

Part of ISSN: 18769918 1876990X
Contributors: Singh, P.K.; Baral, K.; Kumar, S.; Tripathy, M.R.; Singh, A.K.; Upadhyay, R.K.; Chander, S.; Jit, S.
Source: Self-asserted source
MANAS RANJAN TRIPATHY via Scopus - Elsevier

Deep Insight into DC/RF and Linearity Parameters of a Novel Back Gated Ferroelectric TFET on SELBOX Substrate for Ultra Low Power Applications

Silicon
2021 | Journal article
DOI: 10.1007/s12633-020-00672-2
EID:

2-s2.0-85090790579

Part of ISSN: 18769918 1876990X
Contributors: Singh, A.K.; Tripathy, M.R.; Singh, P.K.; Baral, K.; Chander, S.; Jit, S.
Source: Self-asserted source
MANAS RANJAN TRIPATHY via Scopus - Elsevier

Design and Simulation of Triple Material Gate InAs/Si Heterojunction TFET on SEL-BOX Substrates: Temperature Impact Analysis

2021 IEEE 4th International Conference on Computing, Power and Communication Technologies, GUCON 2021
2021 | Conference paper
DOI: 10.1109/GUCON50781.2021.9573526
EID:

2-s2.0-85119096461
Contributors: Singh, A.K.; Tripathy, M.R.; Upadhyay, R.K.; Jit, S.
Source: Self-asserted source
MANAS RANJAN TRIPATHY via Scopus - Elsevier

Impact of interface trap charges on electrical performance characteristics of a source pocket engineered Ge/Si heterojunction vertical TFET with HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> laterally stacked gate oxide

Microelectronics Reliability
2021 | Journal article
DOI: 10.1016/j.microrel.2021.114073
EID:

2-s2.0-85102051548

Part of ISSN: 00262714
Contributors: Tripathy, M.R.; Samad, A.; Singh, A.K.; Singh, P.K.; Baral, K.; Mishra, A.K.; Jit, S.
Source: Self-asserted source
MANAS RANJAN TRIPATHY via Scopus - Elsevier

Impact of ion implantation on stacked oxide cylindrical gate junctionless accumulation mode MOSFET: An electrical and circuit level analysis

Materials Science in Semiconductor Processing
2021 | Journal article
DOI: 10.1016/j.mssp.2021.105966
EID:

2-s2.0-85107776409

Part of ISSN: 13698001
Contributors: Baral, K.; Singh, P.K.; Kumar, G.; Singh, A.K.; Tripathy, M.R.; Kumar, S.; Jit, S.
Source: Self-asserted source
MANAS RANJAN TRIPATHY via Scopus - Elsevier

Lateral and Vertical Gate Oxide Stacking Impact on Noise Margins and Delays for the 8T SRAM Designed with Source Pocket Engineered GaSb/Si Heterojunction Vertical TFET: A Reliability Study

IEEE Transactions on Device and Materials Reliability
2021 | Journal article
DOI: 10.1109/TDMR.2021.3098437
EID:

2-s2.0-85111026015

Part of ISSN: 15582574 15304388
Contributors: Tripathy, M.R.; Jit, S.
Source: Self-asserted source
MANAS RANJAN TRIPATHY via Scopus - Elsevier

2-D analytical modeling of drain and gate-leakage currents of cylindrical gate asymmetric halo doped dual material-junctionless accumulation mode MOSFET

AEU - International Journal of Electronics and Communications
2020 | Journal article
DOI: 10.1016/j.aeue.2020.153071
EID:

2-s2.0-85078082231

Part of ISSN: 16180399 14348411
Contributors: Baral, K.; Singh, P.K.; Kumar, S.; Singh, A.; Tripathy, M.; Chander, S.; Jit, S.
Source: Self-asserted source
MANAS RANJAN TRIPATHY via Scopus - Elsevier

A 2-D compact DC model for engineered nanowire JAM-MOSFETs valid for all operating regimes

Semiconductor Science and Technology
2020 | Journal article
DOI: 10.1088/1361-6641/ab8fc0
EID:

2-s2.0-85088891394

Part of ISSN: 13616641 02681242
Contributors: Baral, K.; Singh, P.K.; Kumar, S.; Tripathy, M.R.; Singh, A.K.; Chander, S.; Jit, S.
Source: Self-asserted source
MANAS RANJAN TRIPATHY via Scopus - Elsevier

Au nanoparticles modified CuO nanowireelectrode based non-enzymatic glucose detection with improved linearity

Scientific Reports
2020 | Journal article
DOI: 10.1038/s41598-020-67986-4
EID:

2-s2.0-85087767321

Part of ISSN: 20452322
Contributors: Mishra, A.K.; Jarwal, D.K.; Mukherjee, B.; Kumar, A.; Ratan, S.; Tripathy, M.R.; Jit, S.
Source: Self-asserted source
MANAS RANJAN TRIPATHY via Scopus - Elsevier

Author Correction: Au nanoparticles modified CuO nanowire electrode based non-enzymatic glucose detection with improved linearity (Scientific Reports, (2020), 10, 1, (11451), 10.1038/s41598-020-67986-4)

Scientific Reports
2020 | Journal article
DOI: 10.1038/s41598-020-74222-6
EID:

2-s2.0-85092603795

Part of ISSN: 20452322
Contributors: Mishra, A.K.; Jarwal, D.K.; Mukherjee, B.; Kumar, A.; Ratan, S.; Tripathy, M.R.; Jit, S.
Source: Self-asserted source
MANAS RANJAN TRIPATHY via Scopus - Elsevier

Design and Investigation of Lateral HfO<sub>2</sub>/SiO<sub>2</sub> Gate Stacked TFET on SELBOX Substrate for Low Power and High-Frequency Applications

2020 URSI Regional Conference on Radio Science, URSI-RCRS 2020 - Proceedings
2020 | Conference paper
DOI: 10.23919/URSIRCRS49211.2020.9113584
EID:

2-s2.0-85090402077
Contributors: Singh, A.K.; Tripathy, M.R.; Baral, K.; Singh, P.K.; Jit, S.
Source: Self-asserted source
MANAS RANJAN TRIPATHY via Scopus - Elsevier

Device and Circuit-Level Assessment of GaSb/Si Heterojunction Vertical Tunnel-FET for Low-Power Applications

IEEE Transactions on Electron Devices
2020 | Journal article
DOI: 10.1109/TED.2020.2964428
EID:

2-s2.0-85081182022

Part of ISSN: 15579646 00189383
Contributors: Tripathy, M.R.; Singh, A.K.; Samad, A.; Chander, S.; Baral, K.; Singh, P.K.; Jit, S.
Source: Self-asserted source
MANAS RANJAN TRIPATHY via Scopus - Elsevier

Device and Circuit-Level Performance Comparison of Vertically Grown All-Si and Ge/Si Hetero-Junction TFET

Proceedings of CONECCT 2020 - 6th IEEE International Conference on Electronics, Computing and Communication Technologies
2020 | Conference paper
DOI: 10.1109/CONECCT50063.2020.9198657
EID:

2-s2.0-85093120816
Contributors: Ranjan Tripathy, M.; Samad, A.; Kumar Singh, A.; Kumar Singh, P.; Baral, K.; Jit, S.
Source: Self-asserted source
MANAS RANJAN TRIPATHY via Scopus - Elsevier

Device-Level Performance Comparison of Some Pocket Engineered III-V/Si Hetero-Junction Vertical Tunnel Field Effect Transistor

ICDCS 2020 - 2020 5th International Conference on Devices, Circuits and Systems
2020 | Conference paper
DOI: 10.1109/ICDCS48716.2020.243576
EID:

2-s2.0-85084677333
Contributors: Tripathy, M.R.; Kumar Singh, A.; Chander, S.; Singh, P.K.; Baral, K.; Jit, S.
Source: Self-asserted source
MANAS RANJAN TRIPATHY via Scopus - Elsevier

Ferroelectric Gate Heterojunction TFET on Selective Buried Oxide (SELBOX) Substrate for Distortionless and Low Power Applications

4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings
2020 | Conference paper
DOI: 10.1109/EDTM47692.2020.9117858
EID:

2-s2.0-85089268998
Contributors: Singh, A.K.; Tripathy, M.R.; Baral, K.; Singh, P.K.; Jit, S.
Source: Self-asserted source
MANAS RANJAN TRIPATHY via Scopus - Elsevier

III-V/Si staggered heterojunction based source-pocket engineered vertical TFETs for low power applications

Superlattices and Microstructures
2020 | Journal article
DOI: 10.1016/j.spmi.2020.106494
EID:

2-s2.0-85083083285

Part of ISSN: 10963677 07496036
Contributors: Tripathy, M.R.; Singh, A.K.; Baral, K.; Singh, P.K.; Jit, S.
Source: Self-asserted source
MANAS RANJAN TRIPATHY via Scopus - Elsevier

Impact of heterogeneous gate dielectric on DC, RF and circuit-level performance of source-pocket engineered Ge/Si heterojunction vertical TFET

Semiconductor Science and Technology
2020 | Journal article
DOI: 10.1088/1361-6641/aba418
EID:

2-s2.0-85089274250

Part of ISSN: 13616641 02681242
Contributors: Tripathy, M.R.; Singh, A.K.; Samad, A.; Singh, P.K.; Baral, K.; Jit, S.
Source: Self-asserted source
MANAS RANJAN TRIPATHY via Scopus - Elsevier

Impact of interface trap charges on device level performances of a lateral/vertical gate stacked Ge/Si TFET-on-SELBOX-substrate

Applied Physics A: Materials Science and Processing
2020 | Journal article
DOI: 10.1007/s00339-020-03869-9
EID:

2-s2.0-85089263565

Part of ISSN: 14320630 09478396
Contributors: Singh, A.K.; Tripathy, M.R.; Baral, K.; Singh, P.K.; Jit, S.
Source: Self-asserted source
MANAS RANJAN TRIPATHY via Scopus - Elsevier

Impact of Temperature on DC and AC Characteristics of Stacked Oxide SiO<sub>2</sub>/HfO<sub>2</sub>Cylindrical Gate Tunnel FETs

2020 5th IEEE International Conference on Emerging Electronics, ICEE 2020
2020 | Conference paper
DOI: 10.1109/ICEE50728.2020.9776990
EID:

2-s2.0-85131830741
Contributors: Singh, P.K.; Baral, K.; Kumar, S.; Tripathy, M.R.; Singh, A.K.; Upadhyay, R.K.; Jit, S.
Source: Self-asserted source
MANAS RANJAN TRIPATHY via Scopus - Elsevier

Influence of temperature on analog/radio frequency appearances of heterojunction cylindrical gate tunnel FETs

2020 IEEE International Conference on Computing, Power and Communication Technologies, GUCON 2020
2020 | Conference paper
DOI: 10.1109/GUCON48875.2020.9231207
EID:

2-s2.0-85096571564
Contributors: Singh, P.K.; Baral, K.; Singh, A.K.; Tripathy, M.R.; Upadhyay, R.K.; Singh, A.P.; Jit, S.
Source: Self-asserted source
MANAS RANJAN TRIPATHY via Scopus - Elsevier

Investigation of DC, RF and linearity performances of a back-gated (BG) heterojunction (HJ) TFET-on-selbox-substrate (STFET): Introduction to a BG-HJ-STEFT based CMOS inverter

Microelectronics Journal
2020 | Journal article
DOI: 10.1016/j.mejo.2020.104775
EID:

2-s2.0-85085734665

Part of ISSN: 00262692
Contributors: Singh, A.K.; Tripathy, M.R.; Baral, K.; Singh, P.K.; Jit, S.
Source: Self-asserted source
MANAS RANJAN TRIPATHY via Scopus - Elsevier

Performance Comparison of Ge/Si Hetero-Junction Vertical Tunnel FET with and without Gate-Drain Underlapped Structure with Application to Digital Inverter

4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings
2020 | Conference paper
DOI: 10.1109/EDTM47692.2020.9117840
EID:

2-s2.0-85091992452
Contributors: Tripathy, M.R.; Singh, A.K.; Samad, A.; Baral, K.; Singh, P.K.; Jit, S.
Source: Self-asserted source
MANAS RANJAN TRIPATHY via Scopus - Elsevier

Simulation Study and Comparative Analysis of Some TFET Structures with a Novel Partial-Ground-Plane (PGP) Based TFET on SELBOX Structure

Silicon
2020 | Journal article
DOI: 10.1007/s12633-019-00330-2
EID:

2-s2.0-85076896365

Part of ISSN: 18769918 1876990X
Contributors: Singh, A.K.; Tripathy, M.R.; Chander, S.; Baral, K.; Singh, P.K.; Jit, S.
Source: Self-asserted source
MANAS RANJAN TRIPATHY via Scopus - Elsevier

Source pocket engineered underlap stacked-oxide cylindrical gate tunnel FETs with improved performance: design and analysis

Applied Physics A: Materials Science and Processing
2020 | Journal article
DOI: 10.1007/s00339-020-3336-8
EID:

2-s2.0-85079069345

Part of ISSN: 14320630 09478396
Contributors: Singh, P.K.; Baral, K.; Kumar, S.; Chander, S.; Tripathy, M.R.; Singh, A.K.; Jit, S.
Source: Self-asserted source
MANAS RANJAN TRIPATHY via Scopus - Elsevier

Study of Temperature Sensitivity on Linearity Figures of Merit of Ge/Si Hetero-Junction Gate-Drain Underlapped Vertical Tunnel FET with heterogeneous gate dielectric structure for Improving Device Reliability

2020 URSI Regional Conference on Radio Science, URSI-RCRS 2020 - Proceedings
2020 | Conference paper
DOI: 10.23919/URSIRCRS49211.2020.9113520
EID:

2-s2.0-85090411658
Contributors: Tripathy, M.R.; Kumar Singh, A.; Baral, K.; Singh, P.K.; Kumar Mishra, A.; Jarwal, D.K.; Jit, S.
Source: Self-asserted source
MANAS RANJAN TRIPATHY via Scopus - Elsevier

Subthreshold Swing Modeling of Gaussian Doped Double-Gate MOSFETs and its Validation Based on TCAD Simulation

Proceedings of CONECCT 2020 - 6th IEEE International Conference on Electronics, Computing and Communication Technologies
2020 | Conference paper
DOI: 10.1109/CONECCT50063.2020.9198488
EID:

2-s2.0-85093108540
Contributors: Singh, P.K.; Baral, K.; Kumar, S.; Singh, A.K.; Tripathy, M.R.; Upadhyay, R.K.; Jit, S.
Source: Self-asserted source
MANAS RANJAN TRIPATHY via Scopus - Elsevier

TCAD Assessment Based Device to Circuit-Level Performance Comparison Study of Source Pocket Engineered All-Si Vertical Tunnel FET and GaSb/Si Heterojunction Vertical Tunnel FET

2020 IEEE 17th India Council International Conference, INDICON 2020
2020 | Conference paper
DOI: 10.1109/INDICON49873.2020.9342569
EID:

2-s2.0-85101541926
Contributors: Tripathy, M.R.; Singh, A.K.; Jit, S.
Source: Self-asserted source
MANAS RANJAN TRIPATHY via Scopus - Elsevier

Dual Material-Stacked Hetero-Dielectric-Junctionless Accumulation Mode Nanotube MOSFET for enhanced Hot Carrier and Trapped Charges Reliability

2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
2019 | Conference paper
DOI: 10.1109/EDTM.2019.8731216
EID:

2-s2.0-85067823236
Contributors: Baral, K.; Singh, P.K.; Kumar, S.; Chander, S.; Tripathy, M.R.; Jit, S.
Source: Self-asserted source
MANAS RANJAN TRIPATHY via Scopus - Elsevier

Impact of Gate Dielectrics on Analog/RF Performance of Double Gate Tunnel Field Effect Transistor

2019 3rd International Conference on Electronics, Materials Engineering and Nano-Technology, IEMENTech 2019
2019 | Conference paper
DOI: 10.1109/IEMENTech48150.2019.8981283
EID:

2-s2.0-85084285291
Contributors: Singh, P.K.; Baral, K.; Chander, S.; Kumar, S.; Tripathy, M.R.; Singh, A.K.; Jit, S.
Source: Self-asserted source
MANAS RANJAN TRIPATHY via Scopus - Elsevier

Performance investigation of a p-channel hetero-junction GaN Tunnel FET

2019 IEEE MTT-S International Microwave and RF Conference, IMARC 2019
2019 | Conference paper
DOI: 10.1109/IMaRC45935.2019.9118671
EID:

2-s2.0-85087781889
Contributors: Tripathy, M.R.; Kumar Singh, A.; Samad, A.; Chander, S.; Singh, P.K.; Baral, K.; Jarwal, D.K.; Kumar Mishra, A.; Jit, S.
Source: Self-asserted source
MANAS RANJAN TRIPATHY via Scopus - Elsevier

Study and Investigation of DC and RF Performance of TFET on SEL-BOX and Conventional SOI TFET with SiO<sub>2</sub>/HfO<sub>2</sub> Stacked Gate Structure

2019 3rd International Conference on Electronics, Materials Engineering and Nano-Technology, IEMENTech 2019
2019 | Conference paper
DOI: 10.1109/IEMENTech48150.2019.8981284
EID:

2-s2.0-85084281769
Contributors: Singh, A.K.; Barah, D.; Tripathy, M.R.; Baral, K.; Chander, S.; Singh, P.K.; Jit, S.
Source: Self-asserted source
MANAS RANJAN TRIPATHY via Scopus - Elsevier

Two-dimensional analytical modeling for electrical characteristics of Ge/Si SOI-tunnel FinFETs

Superlattices and Microstructures
2019 | Journal article
DOI: 10.1016/j.spmi.2019.05.037
EID:

2-s2.0-85067043681

Part of ISSN: 10963677 07496036
Contributors: Chander, S.; Baishya, S.; Sinha, S.K.; Kumar, S.; Singh, P.K.; Baral, K.; Tripathy, M.R.; Singh, A.K.; Jit, S.
Source: Self-asserted source
MANAS RANJAN TRIPATHY via Scopus - Elsevier

DC and RF Performance Optimization of Strained Si/Si<sub>1-x</sub>Ge<sub>x</sub> Heterojunction SOI P-TFET

INDICON 2018 - 15th IEEE India Council International Conference
2018 | Conference paper
DOI: 10.1109/INDICON45594.2018.8987144
EID:

2-s2.0-85082577351
Contributors: Singh, A.K.; Tripathy, M.R.; Singh, P.K.; Baral, K.; Chander, S.; Jit, S.
Source: Self-asserted source
MANAS RANJAN TRIPATHY via Scopus - Elsevier

Efficient VLSI Implementation of CORDIC-Based Direct Digital Synthesizer

Advances in Intelligent Systems and Computing
2015 | Book
DOI: 10.1007/978-81-322-2012-1_64
EID:

2-s2.0-84906933256

Part of ISSN: 21945357
Contributors: Prasad, N.; Tripathy, M.R.; Das, A.D.; Behera, N.R.; Swain, A.
Source: Self-asserted source
MANAS RANJAN TRIPATHY via Scopus - Elsevier

Peer review (6 reviews for 5 publications/grants)

Review activity for Diamond and related materials. (1)
Review activity for Journal of electronic materials. (1)
Review activity for Journal of electronic materials. (2)
Review activity for Measurement. (1)
Review activity for Micro and nanostructures. (1)
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