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Vellore Institute of Technology University: Vellore, Tamil Nadu, IN

Associate Professor (Micro and Nano Electronics)
Employment
Source: Self-asserted source
Rajan Pandey

Works (50 of 82)

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Page 1 of 2

Role of Oxygen Vacancy in the Performance Variability and Lattice Temperature of the Stacked Nanosheet FET

IEEE Access
2024 | Journal article
Contributors: Shubham; Rajan Kumar Pandey
Source: check_circle
Crossref

A comprehensive study of gate-induced drain leakage current and electrical characteristics in nanosheet field-effect transistors due to variation in structural parameters and ambient temperature

Semiconductor Science and Technology
2024-11-01 | Journal article
Contributors: Shubham; Shruti Bhosle; Rajan Kumar Pandey
Source: check_circle
Crossref

Ab Initio Materials Modeling of Point Defects in a High-κ Metal Gate Stack of Scaled CMOS Devices: Variability Versus Engineering the Effective Work Function

Journal of Electronic Materials
2024-10 | Journal article
Contributors: Rajan Kumar Pandey
Source: check_circle
Crossref

Hydrogen-like impurities in Si and Ge quantum dots in connection with 5 nm and beyond metal-oxide-semiconductor technologies

Next Materials
2024-10 | Journal article
Part of ISSN: 2949-8228
Contributors: Rajan Kumar Pandey
Source: Self-asserted source
Rajan Pandey

Band-gap tuning in Mn-doped Er2Ti2O7: Insight from the experimental and theoretical approach

Journal of Alloys and Compounds
2024-08 | Journal article
Part of ISSN: 0925-8388
Contributors: Rajnikant Upadhyay; Manjari Shukla; Rajan K. Pandey; Chandan Upadhyay
Source: Self-asserted source
Rajan Pandey

Stable Work function for Narrow-Pitch Devices

US20230299170A1
2023-09-21 | Patent
Contributors: Rajan Pandey
Source: Self-asserted source
Rajan Pandey

Effect of Mn doping on the electronic and optical properties of Dy<sub>2</sub>Ti<sub>2</sub>O<sub>7</sub>: a combined spectroscopic and theoretical study

Journal of Physics: Condensed Matter
2023-08-23 | Journal article
Part of ISSN: 0953-8984
Part of ISSN: 1361-648X
Contributors: Rajnikant Upadhyay; Manjari Shukla; Rajan K Pandey; Chandan Upadhyay
Source: Self-asserted source
Rajan Pandey

Role of chemical pressure on optical and electronic structure of Ho2Ge x Ti2−x O7

Journal of Physics: Condensed Matter
2020-03-13 | Journal article
Contributors: Manjari Shukla; Soma Banik; Rajan K Pandey; Chandan Upadhyay
Source: check_circle
Crossref

Analyzing the Impact of Grain Boundary Scattering on the Metal Resistivity: First-Principles Study of Symmetric Tilt Grain Boundaries in Copper

Springer Proceedings in Physics
2019 | Book chapter
Part of ISBN: 9783319976037
Part of ISBN: 9783319976044
Part of ISSN: 0930-8989
Part of ISSN: 1867-4941
Contributors: Hemant Dixit; Aniruddha Konar; Rajan Pandey; Jin Cho; Francis Benistant
Source: Self-asserted source
Rajan Pandey

Devices with multiple threshold voltages formed on a single wafer using strain in the high-k layer

US10347494B2
2019 | Patent
Contributors: Rajan Pandey
Source: Self-asserted source
Rajan Pandey

Devices with multiple threshold voltages formed on a single wafer using strain in the high-k layer

US10319596B2
2019 | Patent
Contributors: Rajan Pandey
Source: Self-asserted source
Rajan Pandey

Devices with multiple threshold voltages formed on a single wafer using strain in the high-k layer

US10366897B2
2019 | Patent
Contributors: Rajan Pandey
Source: Self-asserted source
Rajan Pandey

Stable work function for narrow-pitch devices

US10170576B2
2019 | Patent
Contributors: Rajan Pandey
Source: Self-asserted source
Rajan Pandey

Devices with multiple threshold voltages formed on a single wafer using strain in the high-k layer

US9972497B2
2018 | Patent
Contributors: Rajan Pandey
Source: Self-asserted source
Rajan Pandey

Devices with multiple threshold voltages formed on a single wafer using strain in the high-k layer

US9984883B2
2018 | Patent
Contributors: Rajan Pandey
Source: Self-asserted source
Rajan Pandey

Limits of Gate Dielectrics Scaling

Handbook of Thin Film Deposition
2018 | Book chapter
Contributors: Shahab Siddiqui; Takashi Ando; Rajan K. Pandey; Dominic Schepis
Source: Self-asserted source
Rajan Pandey
grade
Preferred source (of 2)‎

Novel p-Band Edge Work Function Modulation for Advanced FETs

2018 MRS Spring Meeting & Exhibit, Phoenix Arizona (April 2-6, 2018)
2018 | Conference abstract
Contributors: Bum Ki Moon, Ohseong Kwon, Rajan Pandey, Hyun-Jin Cho, Choonghyun Lee, Jingyun Zhang
Source: Self-asserted source
Rajan Pandey

Devices with multiple threshold voltages formed on a single wafer using strain in the high-K layer

US9627484B1
2017 | Patent
Contributors: Rajan Pandey
Source: Self-asserted source
Rajan Pandey

Interface Engineering of Si1-xGex Gate Stacks for High Performance Dual Channel CMOS

IEEE International Conference on ASIC (ASICON)
2017 | Conference paper
Contributors: Lee, ChoongHyun; Southwick, Richard G., III; Mochizuki, Shogo; Jamison, Paul; Bao, Ruqiang; Pandey, Rajan; Konar, Aniruddha; Ando, Takashi; Narayanan, Vijay; Haran, Bala et al.
Source: check_circle
Web of Science Researcher Profile Sync

Stable work function for narrow-pitch devices

US9583486B1
2017 | Patent
Contributors: Rajan Pandey
Source: Self-asserted source
Rajan Pandey

Stable work function for narrow-pitch devices

US9735250B2
2017 | Patent
Contributors: Rajan Pandey
Source: Self-asserted source
Rajan Pandey

Tunable voltage margin access diodes

US9705079B2
2017 | Patent
Contributors: Rajan Pandey
Source: Self-asserted source
Rajan Pandey

Tunable voltage margin access diodes

US9680096B2
2017 | Patent
Contributors: Rajan Pandey
Source: Self-asserted source
Rajan Pandey

Tunable voltage margin access diodes

US9647210B2
2017 | Patent
Contributors: Rajan Pandey
Source: Self-asserted source
Rajan Pandey

How thin barrier metal can be used to prevent Co diffusion in the modern integrated circuits?

Journal of Physics D: Applied Physics
2017-11-15 | Journal article
Part of ISSN: 0022-3727
Part of ISSN: 1361-6463
Contributors: H. Dixit, Hemant Dixit, Hemant M. Dixit; Aniruddha Konar; Rajan Pandey; Tamilmani Ethirajan
Source: Self-asserted source
Rajan Pandey

Interface engineering of Si&lt;inf&gt;1−x&lt;/inf&gt;Ge&lt;inf&gt;x&lt;/inf&gt; gate stacks for high performance dual channel CMOS

2017 IEEE 12th International Conference on ASIC (ASICON)
2017-10 | Conference paper
Contributors: ChoongHyun Lee; Richard G. Southwick; Shogo Mochizuki; Paul Jamison; Ruqiang Bao; Rajan Pandey; Aniruddha Konar; Takashi Ando; Vijay Narayanan; Bala Haran et al.
Source: Self-asserted source
Rajan Pandey

Carrier transport in layered nanolaminated carbides

Journal of Applied Physics
2017-10-21 | Journal article
Part of ISSN: 0021-8979
Part of ISSN: 1089-7550
Contributors: Aniruddha Konar; Rajan K. Pandey; Tamilmani Ethirajan
Source: Self-asserted source
Rajan Pandey

First-Principles Investigations of TiGe/Ge Interface and Recipes to Reduce the Contact Resistance

IEEE Transactions on Electron Devices
2017-09 | Journal article
Part of ISSN: 0018-9383
Part of ISSN: 1557-9646
Contributors: H. Dixit, Hemant Dixit, Hemant M. Dixit; Chengyu Niu; Mark Raymond; Vimal Kamineni; Rajan K. Pandey; Anirudhha Konar; Jody Fronheiser; Adra V. Carr; Phil Oldiges; Praneet Adusumilli et al.
Source: Self-asserted source
Rajan Pandey

Impact of oxygen plasma on nitrided and annealed atomic layer deposited SiO<sub>2</sub>/high-k/metal gate for high-voltage input and output fin-shaped field effect transistor devices

Journal of Vacuum Science &amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
2017-01 | Journal article
Part of ISSN: 2166-2746
Part of ISSN: 2166-2754
Contributors: Shahab Siddiqui; Min Dai; Rainer Loesing; Erdem Kaltalioglu; Rajan Pandey; Rajesh Sathiyanarayanan; Sandip De; Srini Raghavan; Harold Parks
Source: Self-asserted source
Rajan Pandey

Tunable voltage margin access diodes

US9508930B2
2016 | Patent
Contributors: Rajan Pandey
Source: Self-asserted source
Rajan Pandey

Selective GeO&lt;inf&gt;x&lt;/inf&gt;-scavenging from interfacial layer on Si&lt;inf&gt;1−x&lt;/inf&gt;Ge&lt;inf&gt;x&lt;/inf&gt; channel for high mobility Si/Si&lt;inf&gt;1−x&lt;/inf&gt;Ge&lt;inf&gt;x&lt;/inf&gt; CMOS application

2016 IEEE Symposium on VLSI Technology
2016-06 | Conference paper
Contributors: C. H. Lee; H. Kim; P. Jamison; R. G. Southwick; S. Mochizuki; K. Watanabe; R. Bao; R. Galatage; S. Guillaumet; T. Ando et al.
Source: Self-asserted source
Rajan Pandey

Process optimizations for NBTI/PBTI for future replacement metal gate technologies

2016 IEEE International Reliability Physics Symposium (IRPS)
2016-04 | Conference paper
Contributors: Barry P. Linder; A. Dasgupta; T. Ando; E. Cartier; U. Kwon; R. Southwick; M. Wang; S. A. Krishnan; M. Hopstaken; M. Bajaj et al.
Source: Self-asserted source
Rajan Pandey

Carrier transport in layered nanolaminated films

2015 | Preprint
Contributors: Aniruddha Konar; Rajan Kumar Pandey; Tamilmani Ethirajan
Source: Self-asserted source
Rajan Pandey

Computationally efficient method to integrate metal-metal interface resistance in semiconductor device modeling

IP.com Disclosure Number: IPCOM000240619D
2015 | Disclosure
Contributors: Rajan Pandey
Source: Self-asserted source
Rajan Pandey

Gate strain induced work function engineering

US9105498B2
2015 | Patent
Contributors: Rajan Pandey
Source: Self-asserted source
Rajan Pandey

Gate strain induced work function engineering

US9070579B2
2015 | Patent
Contributors: Rajan Pandey
Source: Self-asserted source
Rajan Pandey

Silicon controlled rectifier (SCR) clamp including metal insulator transition (MIT) resistor

US8929039B2
2015 | Patent
Contributors: Rajan Pandey
Source: Self-asserted source
Rajan Pandey

Understanding and mitigating High-k induced device width and length dependencies for FinFET replacement metal gate technology

2015 IEEE International Electron Devices Meeting (IEDM)
2015-12 | Conference paper
Contributors: T. Ando; T. Yamashita; S. Fan; I. Ok; R. Sathiyanarayanan; R. Pandey; S. Khan; A. Dasgupta; A. Madan; Q. Yuan et al.
Source: Self-asserted source
Rajan Pandey

On the Origin of Steep $I$ –$V$ Nonlinearity in Mixed-Ionic-Electronic-Conduction-Based Access Devices

IEEE Transactions on Electron Devices
2015-03 | Journal article
Part of ISSN: 0018-9383
Part of ISSN: 1557-9646
Contributors: Alvaro Padilla; Geoffrey W. Burr; Rohit S. Shenoy; Karthik V. Raman; Donald S. Bethune; Robert M. Shelby; Charles T. Rettner; Juned Mohammad; Kumar Virwani; Pritish Narayanan et al.
Source: Self-asserted source
Rajan Pandey

Carrier Transport in High Mobility InAs Nanowire Junctionless Transistors

Nano Letters
2015-03-11 | Journal article
Part of ISSN: 1530-6984
Part of ISSN: 1530-6992
Contributors: Aniruddha Konar; John Mathew; Kaushik Nayak; Mohit Bajaj; Rajan K. Pandey; Sajal Dhara; K. V. R. M. Murali; Mandar M. Deshmukh
Source: Self-asserted source
Rajan Pandey

Nitrogen diffusion in hafnia and the impact of nitridation on oxygen and hydrogen diffusion: A first-principles study

Journal of Applied Physics
2015-01-21 | Journal article
Part of ISSN: 0021-8979
Part of ISSN: 1089-7550
Contributors: Rajesh Sathiyanarayanan; R. K. Pandey; K. V. R. M. Murali
Source: Self-asserted source
Rajan Pandey

Methodology to model spatial variation of work-function and other physical properties in FinFETs

IP.com Disclosure Number: IPCOM000237596D
2014 | Disclosure
Contributors: Rajan Pandey
Source: Self-asserted source
Rajan Pandey

Semiconductor device with a stoichiometric gradient

US9589635B2
2014 | Patent
Contributors: Rajan Pandey
Source: Self-asserted source
Rajan Pandey

The origin of massive nonlinearity in Mixed-Ionic-Electronic-Conduction (MIEC)- based Access Devices, as revealed by numerical device simulation

72ND ANNUAL DEVICE RESEARCH CONFERENCE (DRC)
2014 | Journal article
Contributors: Padilla, A.; Burr, G. W.; Shenoy, R. S.; Raman, K. V.; Bethune, D.; Shelby, R. M.; Rettner, C. T.; Mohammad, J.; Virwani, K.; Narayanan, P. et al.
Source: check_circle
Web of Science Researcher Profile Sync

Trap Generation in IL and HK Layers During BTI/TDDB Stress in Scaled HKMG N and P MOSFETs

IEEE International Reliability Physics Symposium (IRPS)
2014 | Conference paper
Contributors: Mukhopadhyay, S.; Joshi, K.; Chaudhary, V.; Goel, N.; De, S.; Pandey, R. K.; Murali, K. V. R. M.; Mahapatra, S.
Source: check_circle
Web of Science Researcher Profile Sync

Tunneling currents and reliability of atomic-layer-deposited SiBCN for low-kappa spacer dielectrics

IEEE International Reliability Physics Symposium (IRPS)
2014 | Conference paper
Contributors: Southwick, R. G., III; Sathiyanarayanan, R.; Bajaj, M.; Mehta, S.; Yamashita, T.; Gundapaneni, S.; Pandey, R. K.; Wu, E.; Murali, K. V. R. M.; Cohen, S. et al.
Source: check_circle
Web of Science Researcher Profile Sync

A comprehensive DC/AC model for ultra-fast NBTI in deep EOT scaled HKMG p-MOSFETs

2014 IEEE International Reliability Physics Symposium
2014-06 | Conference paper
Contributors: N. Goel; S. Mukhopadhyay; N. Nanaware; S. De; R. K. Pandey; K. V. R. M. Murali; S. Mahapatra
Source: Self-asserted source
Rajan Pandey

The origin of massive nonlinearity in Mixed-Ionic-Electronic-Conduction (MIEC)-based Access Devices, as revealed by numerical device simulation

72nd Device Research Conference
2014-06 | Conference paper
Contributors: A. Padilla; G. W. Burr; R. S. Shenoy; K. V. Raman; D. Bethune; R. M. Shelby; C. T. Rettner; J. Mohammad; K. Virwani; P. Narayanan et al.
Source: Self-asserted source
Rajan Pandey

Trap Generation in IL and HK layers during BTI / TDDB stress in scaled HKMG N and P MOSFETs

2014 IEEE International Reliability Physics Symposium
2014-06 | Conference paper
Contributors: S. Mukhopadhyay; K. Joshi; V. Chaudhary; N. Goel; S. De; R. K. Pandey; K. V. R. M. Murali; S. Mahapatra
Source: Self-asserted source
Rajan Pandey

Tunneling currents and reliability of atomic-layer-deposited SiBCN for low-&amp;#x03BA; spacer dielectrics

2014 IEEE International Reliability Physics Symposium
2014-06 | Conference paper
Contributors: R.G. Southwick; R. Sathiyanarayanan; M. Bajaj; S. Mehta; T. Yamashita; S. Gundapaneni; R. K. Pandey; E. Wu; K. V. R. M. Murali; S. Cohen et al.
Source: Self-asserted source
Rajan Pandey
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Peer review (1 review for 1 publication/grant)

Review activity for Bulletin of Materials Science. (1)