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Works (7)

Anode-Integrated GaN Field Emitter Arrays for Compact Vacuum Transistors

IEEE Electron Device Letters
2023 | Journal article
DOI: 10.1109/LED.2023.3317071
Contributors: Pao-Chuan Shih; Joshua Perozek; Akintunde I. Akinwande; Tomás Palacios
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Experimental Analysis of Beam Perturbation in a Planar Crossed-Field Structure

IEEE Transactions on Plasma Science
2023 | Journal article
DOI: 10.1109/TPS.2023.3299204
Contributors: Ranajoy Bhattacharya; Adam M. Darr; Winston Chern; John McClarin; Brady Sainz; Isaac Wolstenholme; Andong Yue; Mason Cannon; Gerardo Herrera; Akintunde Ibitayo Akinwande et al.
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Stable and High Performance AlGaN Self-Aligned-Gate Field Emitter Arrays

IEEE Electron Device Letters
2022-08 | Journal article
DOI: 10.1109/LED.2022.3184996
Contributors: Pao-Chuan Shih; Girish Rughoobur; Zachary Engel; Habib Ahmad; William Alan Doolittle; Akintunde I. Akinwande; Tomas Palacios
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Electron transmission through suspended graphene membranes measured with a low-voltage gated Si field emitter array

Nanotechnology
2021-07-09 | Journal article
DOI: 10.1088/1361-6528/abf5fb
Contributors: Girish Rughoobur; Lay Jain; Akintunde I Akinwande
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Self-Align-Gated GaN Field Emitter Arrays Sharpened by a Digital Etching Process

IEEE Electron Device Letters
2021-03 | Journal article
DOI: 10.1109/LED.2021.3052715
Contributors: Pao-Chuan Shih; Girish Rughoobur; Kai Cheng; Akintunde I. Akinwande; Tomas Palacios
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Nanofabricated Low-Voltage Gated Si Field-Ionization Arrays

IEEE Transactions on Electron Devices
2020-08 | Journal article
DOI: 10.1109/TED.2020.3001082
Contributors: Girish Rughoobur; Álvaro Sahagún; Olusoji O. Ilori; Akintunde I. Akinwande
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Semiclassical theory of cold field electron emission from nanoscale emitter tips

Journal of Vacuum Science & Technology B
2020-03 | Journal article
DOI: 10.1116/1.5135009
Contributors: A. A. Patterson; A. I. Akinwande
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