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Works (11)

Anisotropic shape of CsPbBr3 colloidal nanocrystals: from 1D to 2D confinement effects

Nanoscale
2020 | Journal article
Part of ISSN: 2040-3364
Part of ISSN: 2040-3372
Source: Self-asserted source
Imen Saïdi
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Bright-Exciton Splittings in Inorganic Cesium Lead Halide Perovskite Nanocrystals

Physical Review Applied
2019-03-18 | Journal article
Part of ISSN: 2331-7019
Source: Self-asserted source
Imen Saïdi

Spatially direct and indirect optical transitions observed for AlInAs/AlGaAs quantum dots

Superlattices and Microstructures
2016-09 | Journal article
Part of ISSN: 0749-6036
Source: Self-asserted source
Imen Saïdi

Optical properties of type-II AlInAs/AlGaAs quantum dots by photoluminescence studies

Journal of Applied Physics
2016-07-21 | Journal article
Part of ISSN: 0021-8979
Part of ISSN: 1089-7550
Source: Self-asserted source
Imen Saïdi

Effect of AlGaAs composition on the type-I to type-II transition in AlInAs/AlGaAs self-assembled quantum dots

Semiconductor Science and Technology
2015-08-01 | Journal article
Part of ISSN: 0268-1242
Part of ISSN: 1361-6641
Source: Self-asserted source
Imen Saïdi

Full-zone k.p model for the electronic structure of unstrained GaAs1−xPx and strained AlxIn1−xAs alloys

Journal of Applied Physics
2012-09 | Journal article
Part of ISSN: 0021-8979
Part of ISSN: 1089-7550
Source: Self-asserted source
Imen Saïdi

Electron and hole energy levels in InAs/GaAs quantum dots: Size and magnetic field effects

Journal of Applied Physics
2011-02 | Journal article
Part of ISSN: 0021-8979
Part of ISSN: 1089-7550
Source: Self-asserted source
Imen Saïdi

Band parameters of GaAs, InAs, InP, and InSb in the 40-band k⋅p model

Journal of Applied Physics
2010-02-15 | Journal article
Part of ISSN: 0021-8979
Part of ISSN: 1089-7550
Source: Self-asserted source
Imen Saïdi

Band structures of GaAs, InAs, and InP: A 34 k⋅p model

Journal of Applied Physics
2008-07-15 | Journal article
Part of ISSN: 0021-8979
Part of ISSN: 1089-7550
Source: Self-asserted source
Imen Saïdi

Band structures of AlAs, GaP, and SiGe alloys: A 30 k×p model

Journal of Applied Physics
2007-09 | Journal article
Part of ISSN: 0021-8979
Part of ISSN: 1089-7550
Source: Self-asserted source
Imen Saïdi

The eight-level k sdot p model for the conduction and valence bands of InAs, InP, InSb

Semiconductor Science and Technology
2007-04-01 | Journal article
Part of ISSN: 0268-1242
Part of ISSN: 1361-6641
Source: Self-asserted source
Imen Saïdi